UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R206-027,A
SWITCHING AND AMPLIFIER
APPLICATION
FEATURES
*Suitable for automatic insertion in thick and thin-film
circuits.
*Complement to BC856 … BC860
SOT-23
1
2
3
1: EMITTER 2: BASE 3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage
BC846
BC847 / BC850
BC848 / BC849
VCBO
80
50
30
V
V
V
Collector-Emitter Voltage
BC846
BC847 / BC850
BC848 / BC849
VCEO
65
45
30
V
V
Emitter-Base Voltage
BC846 / BC847
BC848 / BC849 / BC850
VEBO
6
5
V
V
Collector Current (DC) Ic 100 mA
Collector Dissipation Pc 310 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector Cut-Off Current ICBO VCB=30V, IE=0 15 nA
DC Current Gain hFE VCE=5.0V, Ic=2.0mA 110 800
Collector-Emitter Saturation
Voltage
VCE(sat) Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
90
200
250
600
mV
mV