JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT(RMS) 0.8 A 2.GATE MCR100-6 400 MCR100-8 600 TJ Junction Temperature -40 to 125 Tstg Storage Temperature -55 to 150 VDRM/VRRM 1.KATHODE V 3.ANODE 1 2 3 DESCRIPTION Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. FEATURES z Blocking voltage to 400 V (MCR100-6) z RMS on-state current to 0.8 A z General purpose switching APPLICATIONS z General purpose switching z Phase control applications z Solid state relays. ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT On state voltage * VTM ITM=1A 1.7 V Gate trigger voltage VGT VAK=7V 0.8 V Peak Repetitive forward and reverse VDRM blocking voltage IDRM= 10 A MCR100-6 AND MCR100-8 VRRM IDRM VAK= Rated Current IRRM VDRM or VRRM IH IHL=20mA ,VAK =7V A2 Gate trigger current IGT V 600 Peak forward or reverse blocking Holding current 400 A1 A VAK=7V B * Forward current applied for 1 ms maximum durationduty cycle1% 10 A 5 mA 5 15 A 15 30 A 30 80 A 80 200 A Typical Characteristics MCR100-6,-8