SOT23 PNP SILICON PLANAR
HIGH SPEED TRANSISTOR
ISSUE 2 - SEPTEMBER 1995 ✪
PARTMARKING DETAIL BSS65 - L1
BSS65R - L5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -12 V
Collector-Emitter Voltage VCEO -12 V
Emitter-Base Voltage VEBO -4 V
Peak Pulse Current ICM -200 mA
Continuous Collector Current IC-100 mA
Base Current IC-50 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
BreakdownVoltages V(BR)CEO -12 V IC=-10mA
V(BR)CBO -12 V IC=-10µA *
V(BR)EBO -4 V IE=-10µA
Cut-Off Currents ICBO -100 nA VCB
=-6V, IE=0
IEBO -100 nA VEB
=-4V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) -0.15
-0.25
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Base-Emitter
Saturation Voltage
VBE(sat) -0.75
-0.82
-0.98
-1.20
V
V
IC=-10mA, IB=-1mA
IC=-30mA, IB=-3mA
Static Forward Current
Transfer Ratio
hFE 30
40 150
IC=-10mA, VCE
=-0.3V
IC=-30mA, VCE
=-0.5V
Transition Frequency fT400 MHz IC=-30mA, VCE=-10V,
f=100MHz
Collector-Base
Capacitance
Cobo 6pFV
CB
=-5V, IE=0,
f=1MHz
Emitter Base Capacitance Cebo 6pFV
EB
=-0.5V, IC=0, f=1MHz
Switching Times
Turn-On Time
Turn-Off Time
ton
toff
23
34
60
90
nS
nS
IC=-30mA
IB1 = -IB2= -1.5mA
VCC
=-10V
BSS65
C
B
E
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