Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS -100V
▼ Simple Drive Requirement RDS(ON) 230mΩ
▼ Fast Switching Characteristic ID-15A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W
Rthj-a 40 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W
Data and specifications subject to change without notice
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
200910083
1
AP15P10GS/P
Rating
-100
+20
-15
0.77
RoHS-compliant Product
Continuous Drain Current, VGS @ 10V -9.4
Pulsed Drain Current1-60
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
Linear Derating Factor
96
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15P10GP)
are available for low-profile applications.
GDSTO-263(S)
GDSTO-220(P)
AP15P10GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -100 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-6A - - 230 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-9A - 8 - S
IDSS Drain-Source Leakage Current VDS=-100V, VGS=0V - - -25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=-80V, VGS=0V - - -100 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-9A - 37 60 nC
Qgs Gate-Source Charge VDS=-80V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 15 - nC
td(on) Turn-on Delay Time2VDS=-50V - 11 - ns
trRise Time ID=-9A - 25 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=-10V - 56 - ns
tfFall Time RD=5.6Ω-36-ns
Ciss Input Capacitance VGS=0V - 1180 1900 pF
Coss Output Capacitance VDS=-25V - 250 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
RgGate Resistance f=1.0MHz - 3.6 5 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-9A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-9A, VGS=0V, - 95 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 410 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in2 copper pad of FR4 board
2
AP15P10GS/P
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
0 5 10 15 20 25
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25 oC -10V
-7.0V
-5.0V
-4.5V
VG= -3 .0V
0
10
20
30
0 5 10 15 20 25
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC= 150 oC -10V
-7.0V
-5.0V
-4.5V
VG= -3 .0V
150
250
350
450
550
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-6A
TC=25
℃
0.4
0.9
1.4
1.9
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-6A
VG=- 10V
0.3
0.7
1.1
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
2
4
6
8
10
0 0.4 0.8 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP15P10GS/P
Q
VG
-10V
QGS QGD
QG
Charge
0.1
1
10
100
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
100us
1ms
10ms
100ms
DC
TC=25oC
Single Pulse
0
2
4
6
8
10
12
0 10203040
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -9A
VDS = -80V
10
100
1000
10000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
02468
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =-5V
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
