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Jul. 2010
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Product Guide
Graphic Memory
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Product Guide Graphic Memory
Jul. 2010
1. GRAPHIC MEMORY ORDERING INFORMATION
3. Product
4~5. Density & Refresh
6~7. Organization
8. Bank
9. Interface ( VDD, VDDQ)
11. Package Type
10. Revision
12. Temperature & Power(VDD)
1. SAMSUNG Memory
2. DRAM
Revision
Bank
Organization
Density & Refresh
Product
DRAM
SAMSUNG Memory
Interface (VDD, VDDQ)
Package Type
Temperature & Power
K 4 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11 12 13 14
Speed
Q:SSTL_2 (1.8V, 1.8V)
5:SSTL_2 (1.8V,1.8V,LP)
6:SSTL_15 (1.5V,1.5V)
F:POD_15 (1.5V,1.5V)
K:POD_18 (1.8V,1.8V)
N:gDDR2 SDRAM
W:gDDR3 SDRAM
J:GDDR3 SGRAM
G:GDDR5 SGRAM
51 :512M, 8K/64ms
52 :512M, 8K/32ms
10 :1G, 8K/32ms
1G :1G, 8K/64ms
2G :2G, 8K/64ms
4G :4G, 8K/64ms
16 :x16
32 :x32
3:4Banks
4:8Banks
M:1st Gen.
B:3rd Gen.
D:5th Gen.
F:7th Gen.
H:9th Gen.
Q:17th Gen.
gDDR2
H:84FBGA(Halogen Free & Lead Free)
B:84FBGA(Halogen Free & Lead Free & Flip-Chip)
gDDR3
E :100FBGA(Halogen Free & Lead Free)
H:96FBGA(Halogen Free & Lead Free)
B:96FBGA(Flip-Chip)
GDDR3
B:136FBGA(Lead Free)
H:136FBGA(Halogen Free & Lead Free)
GDDR5
H:170FBGA(Halogen Free & Lead Free)
A:2nd Gen.
C:4th Gen.
E:6th Gen.
G:8th Gen.
I :10th Gen.
Z:26th Gen.
C:Commercial Normal
J:Commercial High
L:Commercial Low
13~14. Speed
1A :0.935ns (2133Mbps) 28 : 0.28ns (7000Mbps)
11 :1.07ns (1866Mbps) 03 : 0.33ns (6000Mbps)
12 : 1.25ns (1600Mbps) 04 : 0.40ns (5000Mbps)
14 :1.4ns (1400Mbps) 05 : 0.50ns (4000Mbps)
15 :1.5ns (1333Mbps) 5C : 0.56ns (3600Mbps)
16 :1.6ns (1200Mbps) 06 : 0.62ns (3200Mbps)
18 :1.8ns (1100Mbps) 6A : 0.66ns (3000Mbps)
19 :1.875ns (1066Mbps) 07 : 0.71ns (2800Mbps)
20 :2.0ns (1000Mbps) 7A : 0.77ns (2600Mbps)
22 :2.2ns (900Mbps) 08 : 0.8ns (2400Mbps)
25 :2.5ns (800Mbps) 09 : 0.9ns (2200Mbps)
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Product Guide Graphic Memory
Jul. 2010
2. GRAPHIC MEMORY COMPONENT PRODUCT GUIDES
Product Density Banks Part Num. PKG & Speed Org. Interf. Ref. Voltage(V) PKG. PKG Type Status
gDDR2
SDRAM
512Mb G-die
4Banks
K4N51163QG HC20/25
32Mx16
SSTL_18 8K/64ms 1.8V ± 0.1V
84ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
512Mb Z-die K4N51163QZ HC20/25
1Gb E-die
8Banks
K4N1G164QE HC20/25
64Mx16
1Gb F-die K4N1G164QF BC20/25
Halogen-Free,
Lead-Free
& Flip-Chip
CS
Jul. ’10
gDDR3
SDRAM
1Gb E-die
8Banks
K4W1G1646E HC1A/11
12/15 64Mx16
SSTL_15 8K/64ms 1.5V ± 0.075V 96ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
2Gb B-die K4W2G1646B HC12/15 128Mx16
2Gb C-die K4W2G1646C HC1A/11
12/15 128Mx16 CS
Jul. ’10
GDDR3
SGRAM
512Mb I-die
8Banks
K4J52324KI HC7A/08
1A/12/14 16Mx32 Pseudo
Open_
Drain
8K/32ms
1.8V ± 0.1V
136ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
1Gb E-die K4J10324KE HC7A/08
1A/12/14 32Mx32 1.8V ± 0.1V Mass
Production
GDDR5
SGRAM
1Gb E-die 8Banks K4G10325FE HC04/05
5C 32Mx32 POD_15 8K/32ms 1.5V ± 0.045V 170ball
FBGA
Halogen-Free
& Lead-Free
Mass
Production
2Gb C-die 16Banks K4G20325FC TBD 64Mx32 POD_15 16K/32ms 1.5V ± 0.045V 170ball
FBGA
Halogen-Free
& Lead-Free
CS
Jun. ’10