Ver. CEDPublication date: May 2013 1
DB3J316J
Silicon epitaxial planar type
For small current rectification
DB3X316J in SMini3 type package
Features
Short reverse recovery time trr
Low forward voltage VF
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 5G
Basic Part Number
Dual DB2S316 (Common Anode)
Packaging
DB3J316J0L
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) Single IF(AV)
100 mA
Double *170
Peak forward current Single IFM
300 mA
Double *1200
Non-repetitive peak forward surge current
*2IFSM 1 A
Junction temperature Tj125 °C
Operating ambient temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +125 °C
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF = 100 mA 0.55 V
Reverse current IRVR = 30 V 15 mA
Terminal capacitance CtVR = 10 V, f = 1 MHz 2 pF
Reverse recovery time *1trr
IF = IR =100 mA, Irr = 0.1 × IR , RL = 100 Ω
0.8 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
10%
trtp
trr
VR
IF
t
t
A
Input Pulse Output Pulse
Irr = 0.1 × IR
Unit: mm
1: Cathode-1
2: Cathode-2
3: Anode-1
Anode-2
Panasonic SMini3-F2-B
JEITA SC-85
Code
1 2
3
Ver. CED
DB3J316J
2
IF VF IR VR Ct VR
10−5
0 0.80.6 1.00.40.2
10−4
10−3
10−1
10−2
1
DB3J316J_ IF-VF
Forward current IF (A)
Forward voltage VF (V)
85°C
100°C
25°C
−40°C
Ta = 125°C
Pulse test
10−9
10−8
0 10 20 30
10−7
10−6
10−5
10−4
10−3
10−2
DB3J316J_ IR-VR
Reverse current IR (A)
Reverse voltage VR (V)
85°C
25°C
−40°C
100°C
Ta = 125°C
0
2
0 10 20 30
10
8
6
4
Terminal capacitance Ct (pF)
Reverse voltage VR (V)
DB3J316J_Ct-VR
Ta = 25°C
Ver. CED
DB3J316J
3
Land Pattern (Reference) (Unit: mm)
SMini3-F2-B Unit: mm
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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Consult our sales staff in advance for information on the following applications:
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life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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