June 2009 Doc ID 14089 Rev 6 1/12
12
STV270N4F3
N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10
STripFET™ III Power MOSFET
Features
■Conduction losses reduced
■Low profile, very low parasitic inductance
Applications
■Switching application
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.
Figure 1. Internal schematic diagram and
connection diagram (top view)
Type VDSS
RDS(on)
max ID (1)
1. Current limited by package
STV270N4F3 40 V < 1.5 mΩ270 A
1
10
PowerSO-10
Table 1. Device summary
Order code Marking Package Packaging
STV270N4F3 270N4F3 PowerSO-10 Tape and reel
www.st.com
Contents STV270N4F3
2/12 Doc ID 14089 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STV270N4F3 Electrical ratings
Doc ID 14089 Rev 6 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vGS = 0) 40 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package
Drain current (continuous) at TC = 25 °C 270 A
IDDrain current (continuous) at TC = 100 °C 220 A
IDM (1) Drain current (pulsed) 1080 A
PTOT (2)
2. This value is rated according to Rthj-c
Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
EAS (3)
3. Starting Tj = 25 °C, ID = 80 A, VDD = 32 V
Single pulse avalanche energy 1000 mJ
Tstg Storage temperature -55 to 175 °C
TjOperating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.5 °C/W
Rthj-pcb (1)
1. When mounted on 1 inch2 FR-4 2 oz Cu.
Thermal resistance junction-pcb max 35 °C/W
Electrical characteristics STV270N4F3
4/12 Doc ID 14089 Rev 6
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage ID = 250 µA, VGS= 0 40 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating,
VDS = Max rating, Tc=125 °C
10
100
µA
µA
IGSS
Gate body leakage
current (VDS = 0) VDS = ± 20 V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V
RDS(on)
Static drain-source on
resistance VGS= 10 V, ID= 80 A 1.25 1.5 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward
transconductance VDS = 10 V, ID= 100 A - 200 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS =0 -
7500
1900
50
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 20 V, ID= 160 A,
VGS= 10 V
Figure 14
-
110
30
25
150 nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 20 V, ID = 80 A
RG= 4.7 Ω, VGS= 10 V
Figure 13
-25
180 -ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 20 V, ID = 80 A
RG= 4.7 Ω, VGS= 10 V,
Figure 13
-110
45 -ns
ns
STV270N4F3 Electrical characteristics
Doc ID 14089 Rev 6 5/12
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISD (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -270
1080
A
A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 160 A,di/dt = 100 A/µs
VDD = 32 V, Tj = 150 °C
Figure 15
-
70
225
3.2
ns
nC
A
Electrical characteristics STV270N4F3
6/12 Doc ID 14089 Rev 6
2.1 Electrical characteristics
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature
I
D
10 10 V
DS
(V)
(A)
10
10
10
10
10
10
-1 0 1
-1
0
1
2
3
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
Operation in this area is
limited by Max Rds(on)
AM01500v1
4V
5V
V
GS
=10V
04V
DS
(V)
2
0
50
100
150
200
6
I
D
(A)
250
300
350
400
450
AM01502v1
04V
GS
(V)
2
0
50
100
150
200
8
I
D
(A)
250
300
350
400
450
6
V
DS
=5V
T
C
=25°C
AM01503v1
R
DS(on)
040 I
D
(A)
(mΩ)
20
1.00
1.10
1.20
1.30
1.40
60 80
AM01501v1
V
GS ≥
10V
T
C
=25°C
STV270N4F3 Electrical characteristics
Doc ID 14089 Rev 6 7/12
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
V
SD
020 I
SD
(A)
(V)
40
0.40
0.45
0.50
T
J
=-50°C
T
J
=175°C
T
J
=25°C
60 80100 120 140 160 180
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
AM04229v1
Test circuits STV270N4F3
8/12 Doc ID 14089 Rev 6
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100µH
µF
3.31000
µFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STV270N4F3 Package mechanical data
Doc ID 14089 Rev 6 9/12
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STV270N4F3
10/12 Doc ID 14089 Rev 6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 3.35 3.65 0.132 0.144
A1 0.00 0.10 0.000 0.004
B 0.40 0.60 0.016 0.024
C 0.35 0.55 0.013 0.022
D 9.40 9.60 0.370 0.378
D1 7.40 7.60 0.291 0.300
e 1.27 0.050
E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240
F 1.25 1.35 0.049 0.053
h 0.50 0.002
H 13.80 14.40 0.543 0.567
L 1.20 1.80 0.047 0.071
q 1.70 0.067
α0
o
8
o
DETAIL "A"
PLANE
SEATING
α
L
A1
F
A1
h
A
D
D1
= =
= =
= =
E4
0.10 A
E1E3
C
Q
A
= =
B
B
DETAIL "A"
SEATING
PLANE
= =
= =
E2
610
51
eB
HE
M
0.25
= =
= =
0068039-C
PowerSO-10 MECHANICAL DATA
STV270N4F3 Revision history
Doc ID 14089 Rev 6 11/12
5 Revision history
Table 8. Document revision history
Date Revision Changes
25-Oct-2007 1 Initial release
03-Apr-2008 2 ID value has been updated.
01-Oct-2008 3 Document status promoted from preliminary data to datasheet
09-Mar-2009 4 Rthj-pcb value has been changed in Table 3: Thermal data.
05-May-2009 5 Changed: Description and Figure 12: Source-drain diode forward
characteristics
17-Jun-2009 6 Corrected typing error on cover page
STV270N4F3
12/12 Doc ID 14089 Rev 6
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