TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6802 2N6802U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain - Source Voltage VDS 500 Vdc Gate - Source Voltage VGS 20 Vdc ID1 2.5 Adc ID2 1.5 Adc Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation (1) W Rds(on) 1.5 (2) Top, Tstg -55 to +150 C Ptl Drain to Source On State Resistance Operating & Storage Temperature 25 Note: (1) Derated Linearly by 0.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 1.5A TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 500 Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C IGSS1 IGSS2 100 200 nAdc IDSS1 IDSS2 25 0.25 Adc mAdc rDS(on)1 rDS(on)2 1.50 1.60 rDS(on)3 3.50 VSD 1.4 Vdc OFF CHARACTERTICS Drain Current VGS = 0V, VDS = 400V VGS = 0V, VDS = 400V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 1.5A pulsed VGS = 10V, ID = 2.5A pulsed Tj = +125C VGS = 10V, ID = 1.5A pulsed Diode Forward Voltage VGS = 0V, ID = 2.5A pulsed T4-LDS-0149 Rev. 1 (092063) Vdc 4.0 Vdc 5.0 U - 18 LCC Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 2.5A VDS = 250V Min. Qg(on) Qgs Qgd Max. 33.00 4.46 28.11 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 2.5A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 225Vdc Diode Reverse Recovery Time di/dt 100A/s, VDD 50V, IF = 2.5A T4-LDS-0149 Rev. 1 (092063) Min. Max. td(on) tr td(off) tf 30 30 55 30 trr 900 Unit ns ns Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Min Max Min Max CD .305 .355 7.75 9.02 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.39 h J k LD LL LS LU L1 .009 .041 .028 .034 .029 .045 .016 .021 .500 .750 .200 TP .016 .019 .050 0.23 1.04 0.72 0.86 0.74 1.14 0.41 0.53 12.7 19.05 5.08 TP 0.41 0.48 1.27 2 3 7, 8 7, 8 6 7, 8 7, 8 L2 .250 6.35 7, 8 P .070 1.78 5 Q .050 r .010 45 TP Notes 1.27 4 0.25 9 45 TP 6 NOTES: 1 2 3 4 5 Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension k measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 7 All three leads. 8 Radius (r) applies to both inside corners of tab. 9 Drain is electrically connected to the case. 10 In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for TO-205AF. T4-LDS-0149 Rev. 1 (092063) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4 Ceramic package only. Ltr BL BW CH LL1 LL2 LS LS1 LS2 LW Q1 Q2 Q3 TL TW Dimensions Inches Millimeters Min Max Min Max .345 .360 8.77 .280 .295 7.11 .095 .115 2.41 .040 .055 1.02 .055 .065 1.40 .050 BSC 1.27 BSC .025 BSC 0.635 BSC .008 BSC 0.203 BSC .020 .030 0.51 0.76 .105 REF 2.67 REF .120 REF 3.05 REF .045 .055 1.14 1.40 .070 .080 1.78 2.03 .120 .130 3.05 3.30 * FIGURE 2. Physical dimensions for LCC. T4-LDS-0149 Rev. 1 (092063) Page 4 of 4