SDM1100LP
Document number: DS38515 Rev. 2 - 2
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April 2016
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1A SCHOTTKY BARRIER RECTIFIER
Product Summary
VRRM (V)
VF(MAX) (V)
@ +25°C
IR(MAX) (µA)
@ +25°C
100
0.77
0.35
Description and Applications
The Schottky Barrier Rectifier is designed with low VF and low reverse
leakage in the low profile U-DFN2020-2 (Type B) package. It is ideal for
use as a rectifier, freewheel diode or blocking diode in applications
such as:
Blocking Diode
Boost Diode
Recirculating Diode
Features and Benefits
Guard Ring Die Construction Transient Protection
Low Power Loss. High Efficiency
Reduced ultra-low forward voltage drop (VF); Better efficiency
and cooler operation.
Reduced high temperature reverse leakage and increased
reliability against thermal runaway failure in high temperature
operation.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-2 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Polarity: See Below
Weight: 6.757mg (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
SDM1100LP-7
U-DFN2020-2 (Type B)
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
Code
B
C
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
1100 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 6 = June)
Bar = Cathode
Top View
Bottom View
Top View
Internal Schematic
U-DFN2020-2 (Type B)
SDM1100LP
Document number: DS38515 Rev. 2 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
100
V
Average Rectified Output Current
IO
1
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
40
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance Junction to Case (Note 5)
RθJC
16
°C/W
Typical Thermal Resistance Junction to Ambient (Note 5)
RθJA
65
°C/W
Operating Temperature Range
TJ
-55 to +175
°C
Storage Temperature Range
TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V(BR)R
100
—
—
V
IR=1mA
Forward Voltage (Note 6)
VF
—
—
0.77
V
IF = 1A, TJ = +25°C
—
0.58
0.62
IF = 1A, TJ = +125°C
—
—
0.86
IF = 2A, TJ = +25°C
—
0.65
0.70
IF = 2A, TJ = +125°C
Leakage Current (Note 6)
IR
—
—
0.1
µA
VR = 50V, TJ = +25°C
—
—
0.015
mA
VR = 50V, TJ = +85°C
—
—
0.35
µA
VR = 100V, TJ = +25°C
—
—
0.35
mA
VR = 100V, TJ = +125°C
Total Capacitance
CT
—
40
—
pF
VR = 5V, f = 1MHz
Notes: 5. Device mounted 1inch sq. copper pad, 2oz.
6. Short duration pulse test used to minimize self-heating effect.
0.0001
0.001
0.01
0.1
1
10
0
100
200
300
400
500
600
700
800
900
1000
I
,
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(
A
)
F
Figure 1 Typical Forward Characteristics
V
, INSTANTANEOUS FORWARD VOLTAGE (mV)
F
T
= -55°C
A
T
= 125°C
A
T
= 150°C
A
T
= 175°C
A
T
= 85°C
A
T
= 25°C
A
IF, INSTANTANEOUS FORWARD CURRENT (A)
0.001
0.01
0.1
1
10
100
1000
020 40 60 80 100
I , INSTANTANEOUS REVERSE CURRENT (µA)
R
Figure 2 Typical Reverse Characteristics
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 175°C
A
T = 85°C
A
T = -55°C
A
SDM1100LP
Document number: DS38515 Rev. 2 - 2
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0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150 175
I , AVERAGE FORWARD CURRENT (A)
F(AV)
T , AMBIENT TEMPERATURE (°C)
A
Figure 3 DC Forward Current Derating Curve
Note 5
0
0.5
1
1.5
2
2.5
0 0.5 1 1.5 2 2.5 3 3.5 4
P , AVERAGE FORWARD POWER DISSIPATION (W)
D
I AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 4 Forward Power Dissipation
Tj=175 C°
10
100
1000
0 5 10 15 20 25 30 35 40
f=1MHz
C , TOTAL CAPACITANCE (pF)
T
Figure 5 Total Capacitance vs. Reverse Voltage
V , DC REVERSE VOLTAGE (V)
R
TJ=175oC
SDM1100LP
Document number: DS38515 Rev. 2 - 2
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SDM1100LP
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-2
(Type B)
Dim
Min
Max
Typ
A
0.47
0.53
0.50
A1
0.00
0.05
0.02
b
1.55
1.65
1.60
D
1.95
2.05
2.00
D2
1.50
1.70
1.60
E
1.95
2.05
2.00
E2
1.22
1.42
1.32
k
0.25 BSC
L
0.23
0.33
0.28
Z
0.20 BSC
Z1
0.075 BSC
All Dimensions in mm
Dimensions
Value
(in mm)
G
0.150
X
1.700
X1
1.700
Y
0.480
Y1
1.520
Y2
2.150
X
Y
Y1
X1
Y2
G
A
Seating Plane
D
D2
E
L
Z
b
A1
E2
k
Z1
SDM1100LP
Document number: DS38515 Rev. 2 - 2
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SDM1100LP
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