VNP49N04 - STMicroelectronics

VNP49N04

OMNIFET :

FULLY AUTOPROTECTED POWER MOSFET

March 2004

123

TO-220

BLOCK DIAGRAM

TYPE Vclamp RDS(on) Ilim

VNP49N04 42 V 0.02 W49 A

■LINEARCURRENT LIMITATION

■THERMAL SHUT DOWN

■SHORTCIRCUIT PROTECTION

■INTEGRATEDCLAMP

■LOW CURRENT DRAWN FROM INPUT PIN

■DIAGNOSTIC FEEDBACK THROUGHINPUT

■ESDPROTECTION

■DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

■COMPATIBLE WITH STANDARD POWER

MOSFET

■STANDARD TO-220 PACKAGE

DESCRIPTION

The VNP49N04 is a monolithic device made

using STMicroelectronics VIPower Technology,

intended for replacement of standard power

MOSFETS in DC to 50 KHz applications.

Built-in thermal shut-down, linear current limita-

tion and overvoltage clamp protect the chip in

harshenviroments.

Faultfeedbackcan be detected by monitoring the

voltage at the input pin.

1/11

ABSOLUTE MAXIMUMRATING

Symbol Parameter Value Unit

VDS Drain-source Voltage (Vin = 0) Internally Clamped V

Vin Input Voltage 18 V

IDDrain Current Internally Limited A

IRReverse DC Output Current -50 A

Vesd Electrostatic Discharge (C= 100 pF, R=1.5 KW) 2000 V

Ptot Total Dissipation at Tc=25oC 125 W

TjOperating Junction Temperature Internally Limited oC

TcCase Operating Temperature Internally Limited oC

Tstg Storage Temperature -55 to 150 oC

THERMAL DATA

Rthj-case

Rthj-amb Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max 1

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VCLAMP Drain-source Clamp

Voltage ID= 200 mA Vin = 0 36 42 48 V

VCLTH Drain-source Clamp

Threshold Voltage ID=2mA V

in =0 35 V

VINCL Input-Source Reverse

Clamp Voltage Iin =-1mA -1 -0.3 V

IDSS Zero Input Voltage

Drain Current (Vin =0) VDS =13V V

in =0

VDS =25V V

in =0 50

200 mA

IISS Supply Current from

Input Pin VDS =0V V

in = 10 V 250 500 mA

ON (*)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VIN(th) Input Threshold

Voltage VDS =V

in ID+Iin =1mA 0.8 3 V

RDS(on) Static Drain-source On

Resistance Vin =10V I

D=25A

Vin =5V I

D=25A 0.02

0.025 W

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (*)Forward

Transconductance VDS =13V I

D=25A 25 30 S

Coss Output Capacitance VDS =13V f=1MHz V

in = 0 1100 1500 pF

VNP49N04

2/11

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (**)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =15V I

d=25A

Vgen =10V R

gen =10W

(see figure 3)

200

1300

800

300

1800

1200

450

td(on)

td(off)

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =15V I

d=25A

Vgen =10V R

gen = 1000 W

(see figure 3)

1.3

3.8

6.1

1.9

5.2

8.5

(di/dt)on Turn-on Current Slope VDD =15V I

D=25A

Vin =10V R

gen =10W

25 A/ms

QiTotal Input Charge VDD =15V I

D=25A V

in = 10 V 100 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VSD (*)ForwardOnVoltage I

SD =25A V

in =0 1.6 V

trr (**)

Qrr (**)

IRRM (**)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 25 A di/dt = 100 A/ms

VDD =30V T

j=25oC

(see test circuit, figure 5)

250

910

7.5

PROTECTION

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Ilim Drain Current Limit Vin =10V V

DS =13V

Vin =5V V

DS =13V 30

30 49

49 68

68 A

tdlim (**) Step Response

Current Limit Vin =10V

Vin =5V 35

90 50

150 ms

Tjsh (**) Overtemperature

Shutdown 150 oC

Tjrs (**) Overtemperature Reset 135 oC

Igf (**) Fault Sink Current Vin =10V V

DS =13V

Vin =5V V

DS =13V 50

20 mA

Eas (**) Single Pulse

Avalanche Energy starting Tj=25oCV

DD =20V

Vin =10V R

gen =1KWL=6mH 4J

(*) Pulsed: Pulse duration =300 ms, duty cycle1.5 %

(**) Parameters guaranteed by design/characterization

VNP49N04

3/11

During normal operation, the Input pin is

electrically connected to the gate of the internal

power MOSFET. The device then behaves like a

standard power MOSFET and can be used as a

switch from DC to 50 KHz. The only difference

from the user s standpoint is that a small DC

current (Iiss) flows into the Input pin in order to

supplythe internalcircuitry.

The deviceintegrates:

-OVERVOLTAGE CLAMP PROTECTION:

internally set at 42V, along with the rugged

avalanche characteristics of the Power

MOSFET stage give this device unrivalled

ruggedness and energy handling capability.

This feature is mainly important when driving

inductiveloads.

-LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input

pin voltage. When the current limiter is active,

the device operates in the linear region, so

power dissipation may exceed the capabilityof

the heatsink. Both case and junction

temperatures increase, and if this phase lasts

long enough, junction temperature may reach

the overtemperaturethreshold Tjsh.

-OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing

the chip temperatureand are not dependenton

the input voltage. The location of the sensing

element on the chip in the power stage area

ensures fast, accurate detection of the junction

temperature. Overtemperaturecutout occurs at

minimum 150oC. The device is automatically

restarted when the chip temperature falls

below135oC.

-STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status

Feedback is provided through the Input pin.

The internal protection circuit disconnects the

input from the gate and connects it instead to

ground via an equivalent resistance of 100 W.

The failure can be detected by monitoring the

voltage at the Input pin, which will be close to

ground potential.

Additional features of this device are ESD

protection according to the Human Body model

and the ability to be driven from a TTL Logic

circuit (with a small increase in RDS(on)).

PROTECTION FEATURES

VNP49N04

4/11

Thermal Impedance

OutputCharacteristics

StaticDrain-Source On Resistance vs Input

Voltage

DeratingCurve

Transconductance

Static Drain-Source On Resistance

VNP49N04

5/11

StaticDrain-Source On Resistance

CapacitanceVariations

Normalized On Resistance vs Temperature

Input Charge vs Input Voltage

Normalized Input Threshold Voltage vs

Temperature

Normalized OnResistance vs Temperature

VNP49N04

6/11

Turn-on Current Slope

Turn-offDrain-Source Voltage Slope

Switching Time Resistive Load

Turn-on Current Slope

Turn-off Drain-SourceVoltage Slope

Switching Time Resistive Load

VNP49N04

7/11

Switching Time Resistive Load

Step Response CurrentLimit

Current Limit vs Junction Temperature

Source Drain Diode Forward Characteristics

VNP49N04

8/11

Fig. 2: UnclampedInductiveWaveforms

Fig. 3: Switching Times Test Circuits For

ResistiveLoad Fig. 4: InputCharge TestCircuit

Fig. 1: UnclampedInductive Load Test Circuits

Fig. 5: Test Circuit For InductiveLoad Switching

And Diode RecoveryTimes Fig. 6: Waveforms

VNP49N04

9/11

10/11

VNP49N04

DIM. mm.

MIN. TYP MAX.

A 4.40 4.60

b 0.61 0.88

b1 1.15 1.70

c 0.49 0.70

D 15.25 15.75

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

Pa ckag e Wei g h t 1.9 G r. (T yp .)

TO-220 ME CHANI CAL DATA

11/11

VNP49N04

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