Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB521SM-40
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
Small current rectification
lFeatures
1)Ultra small mold type. (EMD2)
2)Low VF
3)High reliability
lConstruction
Silicon epitaxial
lStructure
lTaping specifications (Unit : mm)
lAbsolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj °C
Tstg °C
lElectrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
0.16 0.26 0.30
0.31 0.395 0.45
0.41 0.495 0.54
- 3.50 20.00
- 13.00 90.00
IF=10mA
IF=100mA
IF=200mA
Reverse current
IR
μA
VR=10V
VR=40V
Storage temperature
-55 to +150
Parameter
Forward voltage
VF
V
Average rectified forward current
200
Forward current surge peak (60Hz・1cyc)
4
Junction temperature
150
Parameter
Limits
Reverse voltage (repetitive)
45
Reverse voltage (DC)
40
ROHM : EMD2
JEDEC :SOD-523
dot (year week factory)
0.12±0.05
0.6±0.1
0.3±0.05
0.8±0.05
1.2±0.05
1.6±0.1
EMD2
0.8
1.7
0.6
1/3
2011.06 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521SM-40
　
10
100
1000
0.001 0.1 10 1000
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
20
21
22
23
24
25
26
27
28
29
30
AVE:27.2pF
0
0.05
0.1
0.15
0.2
0.25
0.3
0 0.1 0.2 0.3 0.4
0
0.1
0.2
0.3
0.4
0.5
010 20 30 40
Sin(θ＝180)
D=1/2
DC
0
5
10
110 100
t
Ifsm
0
5
10
110 100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
20
AVE:5.60A
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=40V
n=30pcs
AVE:6.86uA
470
480
490
500
510
520
Ta=25℃
IF=200mA
n=30pcs
AVE:495.2mV
1
10
100
010 20 30
0.1
1
10
100
1000
0100 200 300 400 500 600
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:VR(uA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pｆ CHARACTERISTICS
REVERSE POWER
DISSIPATION : P
R
(w)
REVERSE VOLTAGE
：
VR(V)
VR-PR CHARACTERISTICS
Ta=25℃
f=1MHz
VR=0V
n=10pcs
f=1MHz
8.3ms
Ifsm 1cyc
DC
D=1/2
Sin(θ＝180)
0.01
0.1
1
10
100
1000
10000
010 20 30 40
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
2/3 2011.06 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB521SM-40
　
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125 150
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125 150
Sin(θ＝180)
D=1/2
DC
AMBIENT TEMPERATURE
：
Ta(
℃
)
DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
CASE TEMPARATURE：Tc(℃)
DERATING CURVE (Io-Tc)
Sin(θ＝180)
D=1/2
DC
T
Tj=150℃
D=t/T
t
VR
Io
VR=20V
0A
0V
T
Tj=150℃
D=t/T
t
VR
Io
VR=20V
0A
0V
3/3 2011.06 - Rev.A
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System
http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
Notes