TEXAS INSTR {OPTO? b2 DE Beibi7e, ooan7uy s Bf 8967/25 TEXAS INSTR COPTO) _ 620. 36744 D | wa et aa T- 33-07 , TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS JULY 1968 REVISED OCTOBER 1984 Designed for Complementary Use With TIP30 series 30 W at 25C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current Minimum fT of 3 MHz at 10 V,0.2A Customer-Specified Selections Available device schematic TO-220AB PACKAGE EMITTER COLLECTOR THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25 C case temperature (unless otherwise noted) Tip29 | TIP29A current current areas at case temperature | at case temperature ' at temperature storage temperature range mm case NOTES: 1. This vatue applies for ty, < 0.3 ms, duty cycle < 10%. 2, Derate linearly to 150C case temperature at the rate of 0.24 W/C. 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. a > a o. = 3 | 1283 TEXAS we 5-3 INSTRUMENTS POST OF FICE BOX 225012 @ DALLAS, TEXAS 75265 i 7TEXAS INSTR LOPTO? b2 DE Baceiza, an3e74s 7 i t , _ ee ---- eo - ee ee 8561726 TEXAS INSTR (OPTO) ss 2c 36745 p | "TIP29, TIP29A, TIP29B, TIP29C, - 33-09 TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP29D TIP29E TIP29F current current current areas at case temperature at case temperature at temperature energy storage temperature range mm case seconds NOTES: 1. This value applies for ty, < 0.3 ms, duty cycle < 10%. \ 2. Derate tinearly to 150C case temperature at the rate of 0.24 W/C, . 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/G. 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS TP29 TIPZ9A TIP296 TIP296 UNIT MIN TYP MAX | MIN TYP MAX | MIN TYP MAX | MIN TYP MAX fc = 30mA, Ip = 0, v 4 8 100 Vv (BRICEO See Note 9 80 Vce=30V, Igp=0 0.3 . 0.3 | mA CEO Vce= 60V, Ig=0 0.3 0.3 } Vee = 80V, Vep=0 0.2 Vce = 100V, VpeE=0 0.2 | A CES VcE= 120V, Vpe=0 0.2 m Vee = 140V, Vee =0 0.2 lego Vep = SV, Ic = 0 1 1 1 1 mA -VcE = 4V, I = 0.2A, ; hee See Notes 5 and 6 40 40 40 40 | Vee=4V. - Ios IA | ag 75 | 15 75 | 45 75 1 15 75 : See Notes 5 and 6 | Voce =4V Ic = 1A Vv " 1 1.3 1.3 v =~ BE See Notes 5 and6 3 13 p= 125mA, Ic = 14, Vv 7 0.7 0.7 0.7 Vv GQ CE(sat} See Notes 5 and6 Q } < Voce = 10V, ig = 0.24, = h 2 20 20 20 fe f= 1MHz VcE= 10V, IG =0.2A a h CE IGE: 3 3 3 IPfel f= 1MHz 3 NOTES: 5. These parameters must be measured using pulse techniques, tw = 300 ys, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. | : . { u . : 1283 5-4 TEXAS a INSTRUMENTS POST OFFICE 8OX 225012 DALLAS, TEXAS 75265 ee !TEXAS INSTR fOPTO} be DE Jace17an OO3674b af r 8961726 TEXAS INSTR COPTO) Co 62C 36746 - pa tow: s TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS NOTES: 5. These parameters must be measured using pulse techniques, ty = 300s, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal characteristics PARAMETER. MIN TYP MAX | UNIT Rac 4.17 t 9, { Raga 626) ow | resistive-load switching characteristic at 25C case temperature (unless otherwise noted) | PARAMETER TEST CONDITIONS? MIN TYP MAX | UNIT ton Ic = 1A, Ip1 = 0.14, Ip2 = - 0.14, 0.5 5 i Toit Vaglott) = -4-3V. Ri = 302, See Figure 1 Fy B t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 1283 TEXAS % INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 5-5 electrical characteristics at 25C case temperature (unless otherwise noted) / - 3 3 - O93 PARAMETER TEST CONDITIONS TP29D TIP29E TP2OF UNIT MiN TYP MAX | MIN TYP MAX | MIN TYP MAX p fc = 30mA, ig = 0, : ViBRICEO See Note 6 120 140 160 v IcEO VcE = 90V, ig = 0 0.3 0.3 0.3) mA Vce = 160V, Vag = 0 0.2 tcES Voce = 180V, VgE = 0 0.2 mA . Vce = 200V, Vee = 0 0.2 1EBO Veg = 5V, { = 0 1 . 1 1 mA Vce = 4. Io = 0.24, bre See Notes 5 and 6 40 40 40 VcE = 4V, Ic = 1A, 16 16 15 See Notes and 6 - Voce = 4V, Ic =1A, VBE See Notes 5 and 6 13 13 1.3 v Ig = 125mA, lc = 1A, Vckisat) See Notes and 6 o7 7 o7) VcE = 10V, ic = 0.2A, 2 hfe fot Mite 20 0 20 . Vce = 10V, Ic = 0.24, Iheel f= 1MHz 3 3 3 o 2 = Qa a -TEXAS INSTR {OPTO} ba DE J u1724 0036747 O I 8961726 TEXAS INSTR COPTO) TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS 62C 36747 T-33-09 , woos if a \ . PARAMETER MEASUREMENT INFORMATION ED INPUT MONITOR 1 qv 1N914 Regi = 36.2 WM _1_1<- WV 56 1N914 1N914.-1N914 41 ag 270 pF V, > LY ) Maen 3022 Vap2 =4.3V = Veet ~ 10V ADJUST FOR Von =8.5 V AT INPUT MONITOR TEST CIRCUIT Von =85V- 20% INFUT _,o9y 0% ~~ TTT SI MONITOR ~~ I i I 10% OUTPUT { MONITOR 90% OUTPUT MONITOR RL=309 of =i _ VOLTAGE WAVEFORMS v NOTES: A. Vgen's a 30-V pulse into a 502 termination. 0 B. The Vgen waveform is supplied by a generator with the following characteristics: t, < 15ns, t< 15 ns, Zout = 509, tw = 20s, duty cycle < 2%. : S. C. Waveforms are monitored on an oscilloscope with the following characteristics: t; < 15 ns, Rin 2 10 MQ, Cin < 11.5 oF. oO D. Resistors must be noninductive types. : E. The d-c pawer supplies may require additional bypassing in order to minimize ringing. a finn s FIGURE 1. RESISTIVE-LOAD SWITCHING 15 5-6 TE INSTRUMENTS POST OFFICE 8OX 225012 DALLAS, TEXAS 75265 1283TEXAS INSTR {OPTO} be DE Base1726 ooan7ya 2 8964726 TEXAS INSTR COPTOD e2c 36748 Df ON TIP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T- 33 o> 9 {See Note A) Resi 2N5385 TUT L2 INPUT 200 (See Note A} + Rapz = 100 2 - ig MONITOR Vge1 7 10V T - oth TEST CIRCUIT ~< tee Nate 8} (INPUT VOLTAGE -5V-<-4 ' I i) { I i | t \ 100 msm} i | 1 r : t ! ' ; 1.BA _abL ~j--------L- ! - Hy! COLLECTOR fi i CURRENT 0 2 v 3 {BRICER QO COLLECTOR - a VOLTAGE - 10V Me . o-- VOLTAGE AND CURRENT WAVEFORMS NOTES: A. L1 andL2 are 10 mH, 0.11, Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse duration is increased until IC = 1.84. FIGURE 2. INDUCTIVE-LOAD SWITCHING 1283 TEXAS wy INSTRUMENTS POST OFFICE 80x 226012 @ DALLAS, TEXAS 75265 5-7TEXAS INSTR {OPTO} be DE adei7at no3b744 4 i BS61726 TEXAS INSTR COPTO) 62C 36749 } TIP29, TIP29A, TIP29B, TIP29C, 7-33-09 TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS woos : = . - TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO COLLECTOR CURRENT 1k CE=4V Tce =25C See Notes 5 and 6 8 8 a= Q = h hreStatic Forward Current Transfer Ratio 1 0,001 0.004 0.01 0.04 0.14 04 1 . i ICollector CurrentA | FIGURE 3 NOTES: 5. These parameters must be measured using pulse techniques, tw = 300 ps, duty cycle 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. | MAXIMUM SAFE OPERATING AREA FORWARD-BIAS SAFE OPERATING AREA 100 i tw= 3004s, d= 0.12 i 40 ty = 1ms, d= 0.1 = 10% ! tw = 10 ms, d = 0.1 = 10% 10 DC Operation, See Note 7 4 seine dil () {c--Collector Current--A 0.4 TIP29B 0.1 TIP29C 0.04 TIP29E P29F 0.01 1 4 10 40 100 400 1k VcECollector-Emitter VoltageV FIGURE 4 NOTE 7. This combination of maximum voltage and current may be achieved only when switching fram saturation to cutoff with a clamped inductive load, 5-8 TEXAS ye 1283 INSTRUMENTS POST OFFICE 80X 225012 DALLAS, TEXAS 75265TEXAS INSTR {OPTOI be DE Padei7e, oos7so0 F 1 a at = we ee _ p_ 8961726 TEXAS INSTR COPTO) oo. zc 36750 oo TiP29, TIP29A, TIP29B, TIP29C, TIP29D, TIP29E, TIP29F N-P-N SILICON POWER TRANSISTORS THERMAL INFORMATION 7-33 O9 DISSIPATION DERATING CURVE = 40 2 20 8 a 3 20 & 10 E 5 c 95 25 50 75 100 125 150 Tc~Case Temperature"C FIGURE 5 . 2 5 tt) i a , o - 1283 TEXAS 4% 5-9 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 |