Silicon NPN Transistors . Max I p. "pica Absolute Max. Ratings Typical at Von. _ Base Type Con- oc ey hey at (mA) Application yp struction (ay) : ae Vero Vc VERO Ic (or *hye) Ref. } Be ay ony | BY | a | RY | omy HA v FERRANTI (Continued) Current Types (Continued) BFS38 P 350 150 45 35 500 200 at 10 _ _ 53 BFS38A P 350 150 25 25 500 175 at 10 _ _ 53 BFS39 P 350 150 60 45 500 80at 10 _ _ 53 ZTX237 P 350 150 45 200 330at2 _ _. { General purpose 67 ZTX238 P 350 150 30 200 490 at 2 _ _ 67 ZTX239 P 350 150 30 200 590at2 _ _. 67 BSV35A P 350 300 25 12 500 20% at 10 _ 53 BSV35 P 350 500 40. 15 500 80at 10 _ _ High speed switching 53 BSV36 P 350 600 15 6 500 90at 20 _ 53 BSV46 P 350 600 30.15 500 20fat3 ~ _ 53 BSV46A P 350 600 30 15 500 20at3 _ on 53 BFS85 P 350 1, 000 25 12 50 e87at2 _ _ H.F. amplifiers 53 BFS88 P 350 1, 300 30.12 50 87at2 _ 53 aoe \ PE 360 300t = 40S 20 5 500 30at 10 0.025 40 \ High speed switching 2 ZTX3707 Pp 500 _ = 30 _ _ 250 at 0. 1 _ _ Low noise amplifiers 67 ZTK3709 P 500 _ 30 30 105at1 _ _ 67 ZTX3710 P 500 30 _ 30 160 at 1 _ _ General purpose 67 ZTX3711 P 500 _ 30 30 420at1 _ ~ 67 ZTX223 P 500 100 30 800 250 at 50 _ _ 67 ZTX3704 P 500 100 30 800 200 at 50 _ ~ 67 ZTX3705 P 500 100 ~ 30 800 100 at 50 _ _ 67 ZTX3706 P 500 100 20 800 315 at 50 _ _ 67 BFS59 P 500 150 30 1A 170 at 150 _ ~ 67 BFS60 P 500 150 40 _ 1A 200 at 150 _ ~ 67 BFS61 P 500 150 60 _ 1A 100 at 150 _ _ ; 67 ZTX382 P 500 150 45 100 545at2 ~ _. / General purpose 67 ZTX383 P 500 150 0 100 545 at2 _ _ 67 ZTX384 P 500 150 ~ 30 ~ 100 545 at2 _ ~ 67 ZTX4400 P 500 200 40 ~ 600 100 at 150 _ ~ 67 ZTX3903 P 500 250 40 ~ 200 100 at 10 _ ~ 67 ZTX4401 P 500 250 40 600 200 at 150 _ ~ 67 ZTX3904 P 500 300 40 200 200 at 10 _ ~ 67 ZTX327 P 500 400 30 _ _ 350 mW out, 80mW in at 400MHz H.F. amplifiers 67 pasane f PE 600 20 60 20 5 40tat 150 0.2 60 2 ZT2477 High speed switching ouearn \ PE 600 250 60 20 #5 40at150 0.2 60 2 ZTX337 P 750 100 ~ 45 800 350 at 100 _ ~ 67 ZTX338 P 750 100 25 800 350 at 100 _ _~ 67 BFX84 PE 800 50t 100 ~60 6 1A 20 at 10 0.05 100 2 BFX85 PE 800 50t 100 60 6 1A 5504 at 150 0.05 100 General purpose 2 BFY50 PE 800 50t 80 60 6 1A 304 at 150 0.05 80 2 BFY51 PE 800 50t 60 60 6 1A 40f at 150 0.05 60 2 BFY52 PE 800 501 40. 40 6 1A 604 at 150 0.05 40 2 2N3053 PE 1W 1004 60 50 5 700 50f at 150 0. 25 60 Low noise amplifiers 2 ZTX450 P 1w 150 45 _ 1A 200 at 150 ~ a 67 ZTK451 P iW 150 - 60 1A 100 at 150 ~ } A.F. drivers 67 oNieis \ PE .3Wt sot = 75 Citi 1A 404 at 150 0.01. 75 2 ZTUT11 General purpose ONITLA \ PE 3Wt 70: 75 50 7 1A 100f at 150 0.01 75 2 2N4428 PE 3.5Wt 5002 65 85 3.5 425 74mW out, 70mW in at 500MHz 2 2N3866 PE 5Wt 100% 55-30 3.5 400 1.8W out,0.5W in at 100MHz } A.M.,F.M.,C.W. 2 2N4429 PE 5Wi 1, 000% 5535 3.5 425 1W out, 0.3W in at 1GHz 2 oNiTOD \ DJ BWt. so. att 60 40 6 1A 20fat 100 = 75 60 General purpose 2 ouiane \ DJ 5Wt =1.5tt 60 40. 12 1.54 20f at 200 10 60 2 7.71480 . Switching ontden \ DJ 5wt 1.5ft 100 55 (12 1.5A 20f at 200 10 100 2 Continued 43Silicon NPN Transistors tune com P. Typical Absolute Max. Ratings Typical Max yCBO ype struction | Ma oF hy bye a ae Application Rn at Vor VeoK Vee Ic t e . emsizy | AAP | OW LOR? cata HA V L.T.T. (Continued) Current Types (Continued) BCY58C PE 300 300 32 = 32)~i<*! OOO 350 at 2 0.01 32 2 BCY58D PE 300 300 32 32 5 200 500 at 2 0.01 32 2 BCY59A PE 300 300 45 45 5 200 170 at 2 0.01 45 on 2 BCY59B PE 300 300 45 45 5 200 250 at 2 0.01 45 Low level amplifiers 2 BCY59C PE 300 300 45 45 5 200 350 at 2 0.01 45 2 BCY59D PE 300 300 45 45 5 200 500 at 2 0.01 45 2 BSY19 ONyOR \ PE 300 300 40 15 5 200 30 at 10 0.025 20 \ 2 BSY21 ( ono14 PE 300 300 40 15 5 500 30 at 10 0.025 20 \ Low level switching 2 2N743 PE 300 300 20 #412 246 200 10at100 1 20 \ 2 2N744 PE 300 300 20 12 +5 200 20at 100 1 20 2 BF121 P 330 350 40 30 4 25 75 at 4 0.05 25 37 BF127 p 330 350 40 30 4 25 60 at 4 0.05 20 } H.F. amplifiers & 37 BF125 PE 330 450 40 35 4 25 90 at 7 0.05 20 oscillators 37 BF123 PE 330 550 40 25 4 25 90 at 7 0.05 20 37 2N3301 PE 360 250 60 630~t(*!SCS 35 at 10 0.01 50 \ ee 2 2N3302 PE 360 250 60 30 45 500 75 at 10 0.01 50s Highspeed switching 5 2N2368 PE 360 400 40 15 4.5 500 40 at 10 0.4 20 2 2N2369 PE 360 500 40 15 4.5 500 80 at 10 0.4 20 H.S. saturated switching 2 2N2369A PE 360 500 40. 15 4.5 500 80 at 10 0.4 20 2 BSW82 PE 500 200 40 25 5 500 30 at 10 0.1 30 2 BSW83 PE 500 200 40 25 5 500 70 at 10 0.1 30 2 BSW84 PE 500 200 75 40 5 500 35 at 10 0.01 50 2 BSW85 PE 500 200 7 40 5 500 75 at 10 0.01 50 a ccoat ans 2 2N2221 PE 500 250 60 30 5 800 35 at 10 0.01 50; High speed switching = 2N2221A PE 500 250 75 40 46 800 35 at 10 0.01 60 2 2N2222 PE 500 250 60 30 5 800 75 at 10 0.01 50 2 2N2222A PE 500 300 75 40 6 800 75 at 10 0.01 60 2 BC337 PE 625 _ 45 5 800 350 at 100 0.1 45. Medium level 64 BC338 PE 625 _ _ 25 5 800 350 at 100 0.1 45! amplifiers 64 BC 140-6 PE 750 - _ 40. 7 1A 70at100 0.1 40 2 BC140-10 PE 750 ~ ~ 40. 7 1A 110at 100 0.1 40 2 BC 140-16 PE 750 - _ 40. 7 1A 175 at 100 0.1 ~#40 ce: 2 BC141-6 PE 750 - _ 60 1A 70at 100 0.1 Gof Highlevelamplifiers > BC 141-10 PE 750 _ ~ 607 1A 110at 100 0.1. ~~60 2 BC 141-16 PE 750 _ _ 607 1A 175 at 100 0.1 60 2 BC340-6 PE 800 - ~ 40 5 500 70 at 50 0.1 40 2 BC340- 10 PE 800 _ 40 5 500 110 at 50 0.1 40 | ; 2 BC340-16 PE 800 _ _ 40. 5 500 175 at 50 0.1 40 Medium level 2 BC341-6 PE 800 - ~ 60 5 500 70 at 50 0.1 60 | P 2 BC341-10 PE 800 _ _ 60 5 500 110 at 50 0.1 60) 2 BSY51 } ones7 PE 800 100 60 425 = SS**S0 80 at 150 0.1 30 2 BSY52 } Ona 20 | PE 800 100 60 25 5 500 200 at 150 0.1 ~30 2 BSY53 ON1613 \ PE 800 100 75 30 #7 750 80 at 150. -0.01.~Ss60 2 BSY54 | PE 800 100 75 30 #7 ~~ 750 200 at 150 0.01 ~-60 2 2N1711) . Medium level paren \ PE 800 100 120 80 500 goat 150 0.01 go{ Switching 2 BSY56 PE 800 100 120 80 #7 ~~ 500 200 at 150 -0.01~Ss:90 2 BSY87 | oN ge9 PE 800 100 100 #4260 #7 ~~ 500 g0 at 150 0.01.75 2 BSY88 j ong90 } PE 800 100 100 60 #47 ~~ 500 200 at 150. -:0.01.~Ss 75 2 2N1613 PE 800 100 75 50 7 8500 80 at 150 0.01 ~60- 2 2N1711 PE 800 100 75 50 7 500 200 at 150 +:0,01+= 60; Switching 2 2N1893 PE 800 100 120 80 7 ~~ 500 30 at 130 0.01 +90) 2 46 Qu ContinueSilicon NPN Transistors . p. Typical Absolute Max. Ratings Typical Max ICBO Type Con- Max. or he, hep at (mA) Application Buse struction (ni) + fab Vero Vero VEeBO le (or *hfe) Ref. (MHz) (V) (Vv) (Vy | ma HA Vv MULLARD (Continued) Current Types BFT24 PE 30 1, 200 8 5 ~ 5 40 at 1 _ _ R.F. amplifiers 60 BFT25 PE 30 1, 200 8 5 _ 2.5 40ati1 _ _ Micro- miniature 54 BF363 P 120 600 30-20 ~ 20 20% at 3 _ _ vis 59 BF362 P 120 800 30 20 20 20k at 3 _ _ } R.F. amplifiers 59 BF115 PE 145 230 5030 5 30 a - A.M./F.M. 20 BF200 PE 150 550 30 =. 20 3 2 a V.H.F. tuners 20 BF181 PE 150 600 30 20 3 20 - = TV mixers 20 BF180 PE 150 675 30. =. 20 3 20 - = TV tuners 20 BFRQO PE 180 5, 000 20 15 _ 25 50 at 14 _ _ wei 60 BFR91 PE 180 5,000 20 15 # 35 50at30 _ _ \ R.F. amplifiers 60 BFR92 PE 180 5, 000 20 15 25 25% at 14 _ 54 BFR93 PE 180 5, 000 1512 _ 35 25% at 30 _ Micro-miniature 54 BFS20R PE 200 275 30 =. 20 _ 25 40% at 7 - J circuits 53 BCW31R PE 200 300 30-20 100 110tat2 _ : 53 BCW32R PE 200 300 30. 20 100 200at2 | 53 BCW33R PE 200 300 30-20 ~ 100 420at 2 _ ; _ 53 BCW71R: PE 200 300 50 = 45 100 110at2 _ Micro miniature 53 BCW72R PE 200 300 5045 100 200tat2 _ | circuits 53 BSV52R PE 200 400 20 12 100 40% at 10 _/ 53 BFX89 PE 200 1, 200 30. 15 2.5 25 87 at 2 0.01 15 U.H.F. amplifiers 20 BFSI7R PE 200 1, 300 25 15 = 25 25t at 2 _ _ Micro-miniature 53 BFY90 PE 200 1, 300 30 15 2.5 50 87 at 2 0.01 15 U-.H.F. amplifiers 20 BF195 PE 220 200 30 20 5 30 a _ 63 BF194 PE 220 260 30 =. 20 5 30 _ } A.M./F.M. inputs 63 BC147 PE 220 300 50 45 6 100 240 at2 5 20 A.F. driver 43 BC148 PE 220 300 30 20 5 100 240 at 2 5 20 \ General purpose 43 BC149 PE 220 300 30 20 5 100 410at 2 5 20/ A.F. inputs 43 BF196 PE 250 400 40 30 4 25 = _ wes 63 BF197 PE 250 50 40 25 4 25 a _ } TV LF. amplifiers 63 BFW30 PE 250 1, 600 20 10 2.5 50 25 at 50 0.05 10 Amplifiers 20 BSS38 PE 300 60 120 80 250 20% at 1 ~ $witching 50 BSX21 PE 300 60 120 80 5 50 40 at 4 40 5 Driver 4 BSY95A PE 300 200 20 15 5 100 125at 10 0.05 16 D.C.amplifiers 2 BC107 PE 300 300 50 45 6 100 240 at 2 0.015 20 A.F. driver 2 BC108 PE 300 300 30 20 5 100 240 at 2 0.015 20 General purpose 2 BC109 PE 300 300 30. 20 5 100 410 at2 0.015 20 Low noise A.F. 2 BC547 PE 300 300 5045 200 110fat2 =\ 50 BC548 PE 300 300 30-20 200 110% at2 - General purpose 50 BC549 PE 300 300 30 20 200 200% at 2 _ _f 50 BSY38 PE 300 350 20 5 100 45 at 10 _ - . 4 BSY39 PE 300 350 20 5 100 80at10 _ _ } High speed logic 2 BCX19 PE 310 200 5045 500 100% at 100 _ _ _ 54 BCX20 PE 310 200 30.025 500 100% at 100 _ ~ } Micro- miniature 54 BSX19 PE 360 400 40 15 4.5 500 40 at 10 0.2 20 a BSX20 PE 360 500 40 15 4.5 500 80 at 10 0.4 20 . 2 2N2369 PE 360 500 40 15 4.5 500 80 at 10 0.4 2 Bs. Saturated 2 2N2369A PE 360 500 4015 4.5 200 80 at 10 / switching 2 BC337 PE 625 200 5045 1A 100 at 100 _ \ G 1 50 BC338 PE 635 200 30-25 _ 1A 100% at 100 eneral purpose 50 BSX59 PE 800 _ 70 45 5 1A 70 at 150 0.5 150 2 BSX60 PE 800 70 30 5 1A 100 at 150 0.5 io} H.S. core driver 2 BSX61 PE 800 - 70 45 5 1A 110 at 150 0.5 40 2 2N1711 PE 800 _ 7 30 7 1A 200 at 150 0.01 60 D.C.amplifier 9 BFX84 PE 800 50 100 60 6 1A 30 at 150 0.05 80 2 BFX85 PE 800 50 100 60 6 1A 70 at 150 0.05 80 2 BFX86 PE 800 50 40 35 6 1A 70 at 150 0.05. 30 2 BFY51 PE 800 50 60-30 6 1A 70 at 150 0.05 40\ General purpose 2 BFY52 PE 800 50 40 20 6 1A 130 at 150 0.05 30 9 BFY53 PE 800 50 30-20 6 1A 30 at 150. 0.05 20 2 BFY50 PE 800 60 80-35 6 1A 55 at 150 0.05 60 2 2N1613 PE 800 60 75 30 500 80 at 150 2 49 ContinuedSilicon NPN Transistors com be Typical | Absolute Max. Ratings Typical Man eee Type struction yy or ny 1 ME oe) Application pe I + fa > - . e. . (MHz) | OP | RP | EPL aaa " vA | NEWMAREET (Continued) Current Types (Continued) 2N 2220 ~ 00 ~ 60 30. 5 800 40 at 150 0.01 50 R.F. switching 2 2N2220A 500 - 75 40 6 800 40 at 150 0.01 60 2 2N2221 500 _ 60 30 5 800 80 at 150 0.01 50 es 2 2N2221A 500 - 7 40 6 800 80at 150 0.01 60 RF. amplifiers 2 2N2222 500 - 60 30 5 800 200at 150 0.01 50 2 2N2222A 500 ~ 15 40 6 800 200at 150 0.01 60 2 NKT10339 500 100 45 30 +5 500 100 at 100 0.01 10 A.F. drivers 2 NKT10439 500 100 45 30 5 500 100 at 100 0.01 10 2 NKT12329 500 200 30 20 4 500 80 at 10 0.01 10 \ RF hifi 2 NKT 12429 500 200 30 20 4 500 195 at 10 0.01 10 7 ampliiers 2 2N1613 800 ~ 75 - 7 - 65 at 1 0.01 60 2 2N1711 800 _ 75 - 7 125at1 0.01 60 A.F, switching 2 2N1893 800 _ 120 80 7 1A 80 at 150 0.01 90 2 2N2217 800 - 60 30.5 800 40 at 150 0.01 50 2 2N2217A 800 _ 15 40 6 800 40 at 150 0.01 60 2 2N2218 800 60 30. 5 ~-800 80 at 150 0.01 50 2 IN2218A 800 ~ 75 40 6 800 80 at 150 0.01 60 F iti 2 2N2219 800 ~ 60 30 5 800 200at 150 0.01 50) R-F.amplifiers 2 2N2219A 800 ~ 75 40 6 800 200 at 150 0.01 60 2 BFX84 800 50 100 60 6 1A 30f at 150 0.05 980 2 BFX85 800 50 100 60 6 1A 70t at 150 0.05 80 2 BFX86 800 50 40 35 6 1A = 70 at 150 0.05 30 A.F.driver 2 BFY51 800 50 60 30 6 1A 40% at 150 0.05 40 2 BFY52 800 50 40 20 6 1A 60 at 150 0.05 400 Ae cvitehi 2 BFY53 800 50 30 20 6 1A 30 at 150 _ H. Switening 2 BFY50 800 60 80 35 6 1A 30% at 150 0.05 60 2 2N2297 800 60 80 35.7 - 80 at 150 0.01 60 A.F.drivers 2 BSX60 800 250 70 30, 14 60 at 500 _ \ RF. switehin 2 BSX61 800 250 70 45 1A -30t at 500 _ switching 2 2N3053 1W ~ 60 40 5 700 150t at 150 0.25 30 A.F.amplifiers 2 2N3055 115W _ 100 60 5 15A 45 at 4A Power switching 1 BDY20 115W 1 100 60 5 15A 60 at 4A _ > Power amplifiers 1 Minimum value R.C.A. Current Types BDY71 H _ 0.8 - 55 _ 3A 137 - _ _ General purpose 1 QN718A P 1.8w 100 _ 32 ~ 900 80 at 150 0.01 60 2 2N720A P 1.8w 100 - 80 900 80 at 150 0.01 90 2 2N2895 _ 1.8w 100 65 900 80 at 150 0.002 60 se: 2 2N2896 1.8Ww 100 90 900 180 at 150 0.01 99 ( Audio amplifiers 2 2N2897 _ 1.8W 100 45 900 125 at 150 0.02 60 2 40084 1.8W 100 40 900 150 at 150 0.25 30 2 40310 H aw 0.8 35 _ 3A Oat1A 10 15 \ ; oes 1 40312 H 5W 0.8 _ 60 8A atid 10 15 f Audio amplifiers 1 2N697 PE 5W 120 40 900 80 at 150 1 30 2 2N699 PE 5W 120 80 900 80 at 150 2 60 2 2N1613 PE 5W 120 50 900 80 at 150 0.01 60 2 2N1711 PE 5W 120 50 900 200 at 150 0.01 60 2 2N1893 PE SW 120 _ 80 900 80 at 150 0.01 90 General purpose 2 2N2102 PE 5W 120 _ 65 900 80 at 150 0.002 60 2 2N2270 PE 145W 120 45 900 125 at 150 0.1 60 2 9N2405 PE 5W 120 90 900 130at150 0.01 90 2 2N3053 PE 5W 120 40 900 150 at 150 0.25 30 2 40309 PE 5W 120 - 18 900 210 at 50 0.25 15 2 40311 PE 5W 120 30 900 210at 50 0.25 15 2 40314 PE 5W 120 40 900 210at 50 0.25 15( pi. 2 40315 PE 5Ww 120 35 900 210 at 50 0.25 15 2 40317 PE 5W 120 40 900 120 at 10 0.25 15 2 40320 PE 5W 120 40 900 120 at 10 0.25 15 2 ContinuedSilicon NPN Transistors Typical Max ICBO >. Absolute Max. Ratings Typical at VCB Type Con | he on By, hyp: at (mA) Application Base struction (nw) + fab VcRo VeKo VERO Ic (or *hye) Ref. (MHz) (V) (Vv) Wy) | (ma HA y TEXAS (Continued) Current Types (Continued) 2N2222A PE 500 300 7 40 #6. 800 200 at 150 0.01 60 General purpose 2 2N3303 PE 600 - 25 12 4 1A 75 at 300 > _ Fast switching 2 2N699 DDP 600 30 120 +80 5 80 at 150 2 60 2 2N1420 DDP 600 30 60 30 5 1A -. 200 at 150 1 30 \ Amps./osc, 9 2N696 P 600 40 60 40 5 500 20i at 150 _ \ . ; 2 2N697 p 600 50 60 40 5 500 40 at 150 f Medium power 2 TIS90 PE 625 _ 40 40 5 400 160 at 50 0.1 20 24 TIS9OM PE 625 40 40 5 400 160 at 50 0.1 20 | 24 TIS92 PE 625 _ 40 40 5 400 160 at 50 0.1 20 General purpose 24 TIS92M PE 625 _ 40 40 5. 400 160 at 50 0.1 20 } 24 BSS34 _ 625 90 100 80 200 50% at 10 24 BSS35 ~ 625 90 120 100 200 40% at 10 _ } Indicator tube driver 54 BFY50 PE 800 80 80 6 1A _ ~ 0,05 60) 2 BFY51 PE 800 _ 60 60 6 1A _ _ 0.05 40 General purpose 2 BFY52 PE 800 40 40 6 1A _ ~ 0.05 30) 2 2N3036 PE 800 _ 120 80 7 1.2A 100 at 150 0.01. 60 2 2N3418 PE 800 85 60 8 3A 40 at 1A 2 2N3419 PE 800 _ 125 80 8 3A 40 at 1A _ _ General purpose 2 2N3420 PE 800 ~ 85 60 88 3A 80 at 1A _ 2 2N3421 PE 800 - 125 80 8 3A 80 at 1A 2 2N3724 PE 800 _ 50 30 6 500 35t at 500 1.7 ~~ 40 - ae 2 2N3725 PE 800 _ 80 50 6 500 35t at 500 1.7 ~~ 40 } High speed switching == 5 2N1714 tDM 800 16 60 6 750 40 at 200 _ 2 2N1715 tDM 800 16 ~ 100 6 750 40 at 200 _ 2 2N1716 tDM 800 16 60 6 750 80 at 200 _ 2 2N1717 tDM 800 16 100 6 750 80 at 200 _ -~\ oe 2 2N1718 tDM 800 16 60 6 750 40 at 200 _ : 16 2N1719 tDM 800 16 100 6 750 40 at 200 16 2N1720 tDM 800 16 _ 60 6 750 80 at 200 _ _ 16 2N1721 tDM 800 16 100 6 750 80 at 200 16 2N698 P 800 40 120 80 7 600 20% at 150 ~ - Medium power 2 2N1507 DDP 800 50 60 ~-30 5 1A 1004 at 150 _ 2 2N1889 DDP 800 50 100 60 ~=67~SO 00 401 at 150 _ 2 2N1893 DDP 800 50 120 80 7 800 40% at 150 _ 2 2N2192 PE 800 50 60 40 5 1A: 100 at 150 ~ 2 2N2192A PE 800 50 60 40 5 1A 1004 at 150 _ 2 2N2193 PE 800 50 80 50 8 1A 40t at 150 _ _ 2 2N2193A PE 800 50 80 50St* 1A 40% at 150 _ ) Medium power 2 2N2194 PE 800 50 60 40 5 1A 20% at 150 _ 2 2N2194A PE 800 50 60 40 5 1A 20t at 150 _ - 2 2N2243 PE 800 50 1200 80 7 1A 20t at 150 _ 2 2N2243A PE 800 50 120 80 #7 1A 40% at 150 2 2N3036 PE 800 50 120 80 7 1.2A 50% at 150 _ _ 2 2N1613 DDP 800 60 75 50 7 500 40t at 150 - | 2 2N1890 DDP 800 60 100 60 #7 500 100 at 150 _ | Medium power 2 QN1711 DDP 800 60 7% 50 #7 1A: 100F at 150 $ 2 BFR39 _ 800 100 90 80 1A 30t at 150 =| 24 BFR40 _ 800 100 70 60 _ 1A 407 at 150 _ _ General purpose 24 BFR41 800 100 60 50 1A 60t at 150 $3 24 BF257 PE 800 110 160 160 5 100 251 at 30 0.05 100 | 2 BF258 PE 800 110 250 250 5 100 25t at 30 0.05 200} Video amplifiers 2 BF259 PE 800 110 300 300 5 100 25 at 30 0.05 250 J 2 BFR86 800 130 120 120 400 20% at 30 _ _ 24 BFR87 _ 800 130 160 160 400 201 at 30 _ _ 24 BFR88 _ 800 130 250 250 400 20% at 30 _ =) Video output 24 BFR89 - 800 130 300 300 400 201 at 30 _ 24 2N2217 PE 800 250 60 30 5. 800 20t at 150 _ _ 2 2N2218 PE 800 250 60 30 5 800 40t at 150 ~ _ 2 QN2218A PE 800 250 75 46=6 40.~SsBS*S'COD 80 at 150 0.01 60 HF. 2 2N2219 PE 800 250 60 30 5. 800 100% at 150 _ 2 2N2219A PE 800 250 7 40 6. 800 200 at 150 0.01 60 2 Continued