KE C SEMICONDUCTOR BCs17 KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B Cc TT [ MAXIMUM RATINGS (Ta=25C) L CHARACTERISTIC SYMBOL | RATING | UNIT | i ft + No [DIM | MILLIMETERS K _ tte uf A 4.70 MAX ot B 4.80 MAX Collector-Base Voltage Veso AQ Vv > c 3.70 MAX : D 0.45 Collector-Emitter Voltage Vero 30 Vv . Te G 0.85 Emitter-Base Voltage VeERo 10 Vv len a = 2.48 = Collector Current Ic 500 mA . . 7 a M 0.45 MAX Collector Power Dissipation Pe 625 mW | es N 1.00 = 1. COLLECTOR Junction Temperature Tj 150 Cc ( , BASE 3. EMITTER Storage Temperature Tstg -55 ~ 150 Cc TO-92 ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector-Base _ _ _ Breakdown Voltage Vinpicro Ic=0.ImA 40 Vv Collector-Emitter _ _ _ Breakdown Voltage Vinicro Ic=10mA 40 Vv Emitter-Base _ _ _ Breakdown Voltage Vinwirno In-LOmA 10 Vv Collector Cut-off Current Iczo Vcp=40V - - 1.0 BA Emitter Cut-off Current TEno Ven=loV - - 1.0 LA DC Current Gain her Tc=100mA, Vcr=2V 30k - - Collector-Emitter Vertea) Ic=100mA, In=lmA - - 1.0 Vv Saturation Voltage Base~Emitter Vortsat) Ic=100mA, In=10mA - 15 2.0 Vv Saturation Voltage Current Gain Bandwidth Product fy Tc=100mA, Vcn=2V, f=100MHz - 220 - MHz Collector Output Capacitance Cob Vcn=l0V, f=1MHz - 5.0 - pF 1994, 3. 2 Revision No : 0 KEC 1/2 BCo17 hre Ic Ic Vcx(sat) = g fw ~ ey a oO Z Ta=125C . <q 0 a=25" ei g : es 5 : % o Es oO 0 A 5 _ 10 5 ; 3 3 5 10 10 10 10 10 0 O02 04 06 O08 1.0 1.2 COLLECTOR CURRENT Ic (mA) COLLECTOR-EMITTER SATURATION VOLTAGE Vcx(sat) (V) Ic Vor 700 625 10 500 10 400 300 Pe (mW) 200 10 100 0 10 0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 AMBIENT TEMPERATURE Ta _ ('C) BASE-EMITTER VOLTAGE Vpr_ (V) COLLECTOR CURRENT Ic (mA) 0 COLLECTOR POWER DISSIPATION 1994. 3.2 Revision No : 0 KEC 2/2