DS14001 Rev. G-2 1 of 2 ES1A - ES1G
ES1A - ES1G
1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics @ TA= 25°C unless otherwise specified
·Glass Passivated Die Construction
·Super-Fast Recovery Time For High Efficiency
·Low Forward Voltage Drop and High Current
Capability
·Surge Overload Rating to 30A Peak
·Ideally Suited for Automated Assembly
·Plastic Material: UL Flammability
Classification Rating 94V-0
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·Case: Molded Plastic
·Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
·Polarity: Cathode Band or Cathode Notch
·Marking: Type Number
·Weight: 0.064 grams (approx.)
A
B
C
D
G
H
E
J
SMA
Dim Min Max
A2.29 2.92
B4.00 4.60
C1.27 1.63
D0.15 0.31
E4.80 5.59
G0.10 0.20
H0.76 1.52
J2.01 2.62
All Dimensions in mm
Characteristic Symbol ES1A ES1B ES1C ES1D ES1G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 150 200 400 V
RMS Reverse Voltage VR(RMS) 35 70 105 140 280 V
Average Rectified Output Current @ TT= 110°CIO1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM 30 A
Forward Voltage Drop @ IF= 0.6A
@ IF= 1.0A VFM 0.90
0.98
¾
1.25 V
Peak Reverse Current @ TA= 25°C
at Rated DC Blocking Voltage @ TA= 100°CIRM 5.0
200 mA
Reverse Recovery Time (Note 3) trr 20 ns
Typical Junction Capacitance (Note 2) Cj10 pF
Typical Thermal Resistance, Junction to Terminal (Note 1) RqJT 40 K/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Unit mounted on PC board with 5.0 mm2(0.013 mm thick) copper pad as heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured with IF= 0.5A, IR= 1.0A, Irr = 0.25A. See figure 5.
DS14001 Rev. G-2 2 of 2 ES1A - ES1G
0
10
20
30
1 10 100
I , PEAK FORWARD SURGE CURRENT (A
)
FSM
NUMBER OF CYCLES AT 60 Hz
Fi
g
. 3 Sur
g
e Current Deratin
g
Curve
Single Half-Sine-Wave
(JEDEC Method)
0.1
1.0
10
100
0 40 80 120
I , INSTANTANEOUS REVERSE CURRENT (A)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fi
g
.4 T
y
pical Reverse Characteristics
T = 100 C
j°
T = 25 C
j°
0
0.5
25 50 75 100 125 150 175
I , AVERAGE RECTIFIED CURRENT (A)
O
T , TERMINAL TEMPERATURE ( C)
Fi
g
. 1 Forward Current Deratin
g
Curve
T°
1.0
1
.5
50V DC
Approx
50 NI (Non-inductive)Ω10 NIΩ
1.0
NI
ΩOscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Set time base for 50/100 ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fi
g
. 5 Reverse Recover
y
Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6
I , INSTANTANEOUS FORWARD CURRENT (A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fi
g
.2 T
y
pical Forward Characteristics
F
T = 25 C
j°
I Pulse Width: 300 s
Fµ
ES1A - ES1D ES1G
