A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO IC = 100 mA 26 V
BVCER IC = 100 mA RBE = 200 Ω 35 V
BVCES IC = 50 mA 60 V
BVEBO IE = 10 mA 3.5 V
ICES VCE = 30 V 10 mA
hFE VCE = 5.0 V IC = 1.0 A 30 45 120 ---
PG
IMD
ηηC
VCC = 26 V POUT = 150 W ICQ = 2 X 150 mA
f = 960 MHz
8.0
35
-28 dB
dBc
%
ψψ VSWR = 5:1 at all phase angles No Degradation in Output Power
NPN SILICON RF POWER TRANSISTOR
CBSL150
DESCRIPTION:
The ASI CBSL150 is Designed for 900
MHz Class AB Cellular Base Station
Amplifiers.
FEATURES:
• Internal Input/Output Matching
• PG = 9.0 dB Typ. at 150 W/ 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 25 A
VCEO 28 V
VCES 60 V
VEBO 3.5 V
PDISS
300 W @ TC = 25 OC
TJ -65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 0.6 OC/W
PACKAGE STYLE .400 BAL FLG (C)
ORDER CODE: ASI10586
MINIMUM
inches / mm
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
.130 / 3.30
.820 / 20.83
.390 / 9.91
inches / mm
1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M.850 / 21.59 .870 / 22.10
.220 / 5.59 .230 / 5.84
.435 / 11.05
.082 / 2.08 .100 / 2.54
.407 / 10.34.395 / 10.03
.080x45° A B
F G
H
I
JK
L
M
(4X).060 R
.1925
DC
E
FULL R
N
1.335 / 33.91 1.345 / 34.16
.210 / 5.33
