ALD114813PC - Advanced Linear Devices

EPAD

ADVANCED

LINEAR

DEVICES, INC.

*N/C pins are internally connected.

Connect to V- to reduce noise

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

VGS(th)= -1.3V

ALD114813/ALD114913

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

MATCHED PAIR MOSFET ARRAYS

GENERAL DESCRIPTION

ALD114813/ALD114913 are monolithic quad/dual N-Channel MOSFETS matched

at the factory using ALD’s proven EPAD CMOS technology. These devices are

intended for low voltage, small signal applications. They are excellent functional

replacements for normally-closed relay applications, as they are normally on (con-

ducting) without any power applied, but could be turned off or modulated when

system power supply is turned on. These MOSFETS have the unique character-

istics of, when the gate is grounded, operating in the resistance mode for low

drain voltage levels and in the current source mode for higher voltage levels and

providing a constant drain current.

These MOSFETS are designed for exceptional device electrical characteristics

matching. As these devices are on the same monolithic chip, they also exhibit

excellent temperature tracking characteristics. They are versatile as design com-

ponents for a broad range of analog applications, and they are basic building

blocks for current sources, differential amplifier input stages, transmission gates,

and multiplexer applications. Besides matched pair electrical characteristics, each

individual MOSFET also exhibits well controlled parameters, enabling the user to

depend on tight design limits. Even units from different batches and different date

of manufacture have correspondingly well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are designed for switching and amplifying appli-

cations in single 1.5V to +/-5V systems where low input bias current, low input

capacitance and fast switching speed are desired. These devices exhibit well

controlled turn-off and sub-threshold charactersitics and therefore can be used in

designs that depend on sub-threshold characteristics.

The ALD114813/ALD114913 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user, for

most applications, connect V+ pin to the most positive voltage potential (or left

open unused) and V- and N/C pins to the most negative voltage potential in the

system. All other pins must have voltages within these voltage limits.

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin 16-Pin 8-Pin 8-Pin

Plastic Dip SOIC Plastic Dip SOIC

Package Package Package Package

ALD114813PC ALD114813SC ALD114913PA ALD114913SA

ORDERING INFORMATION

FEATURES

• Depletion mode (normally ON) without power

• Precision Gate Threshold Voltages: -1.30V +/- 0.04V

• Nominal RDS(ON) @VGS=0.0V of 1.3KΩ

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match (VOS) — 20mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Functional replacement of Form B (NC) relay

• Zero power fail safe circuits

• Backup battery circuits

• Power failure detector

• Fail safe signal detector

• Source followers and buffers

• Precision current mirrors

• Precision current sources

• Capacitives probes

• Sensor interfaces

• Charge detectors

• Charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors

• Sample and Hold

• Alarm systems

• Current multipliers

• Analog switches

• Analog multiplexers

• Voltage comparators

• Level shifters

N/C*

314

413

512

N/C*

ALD114813

M 4 M 3

M 1 M 2

V-

GN1

DN1

N/C*

S12

DN2

GN2

ALD114913

M 1 M 2

V-

N/C*

V-

* Contact factory for industrial temp. range or user-specified threshold voltage values

www.aldinc.com

ALD114813/ALD114913 Advanced Linear Devices 2

Notes: 1 Consists of junction leakage currents

ABSOLUTE MAXIMUM RATINGS

Drain-Source voltage, VDS 10.6V

Gate-Source voltage, VGS 10.6V

Power dissipation 500 mW

Operating temperature range PA, SA, PC, SC package 0°C to +70°C

Storage temperature range -65°C to +150°C

Lead temperature, 10 seconds +260°C

OPERATING ELECTRICAL CHARACTERISTICS

V+ = +5V (or open) V- = -5V TA = 25°C unless otherwise specified

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

Parameter Symbol Min Typ Max Unit Test Conditions

ALD114813/ALD114913

Gate Threshold Voltage VGS(th) -1.34 -1.30 -1.26 V IDS =1µA

VDS = 0.1V

Offset Voltage VOS 720mVI

DS =1µA

VGS(th)1-VGS(th)2

Offset Voltage Tempco TCVOS 5µV/ °CV

DS1 = VDS2

GateThreshold Voltage Tempco TCVGS(th) -1.7 mV/ °CI

D= 1µA

0.0 ID= 20µA, VDS = 0.1V

+1.6 ID= 40µA

On Drain Current IDS (ON) 12.0 mA VGS = +8.2 V

3.0 VGS = +2.7V

VDS = +5V

Forward Transconductance GFS 1.4 mmho VGS = +2.7V

VDS = +7.7V

Transconductance Mismatch ∆GFS 1.8 %

Output Conductance GOS 68 µmho VGS =+2.7V

VDS = +7.7V

Drain Source On Resistance RDS (ON) 500 ΩVDS = 0.1V

VGS = +2.7V

Drain Source On Resistance RDS (ON) 1.3 KΩVDS = 0.1V

VGS = +0.0V

Drain Source On Resistance ∆RDS (ON) 7%

Tolerance

Drain Source On Resistance ∆RDS (ON) 0.5 %

Mismatch

Drain Source Breakdown BVDSX 10 V IDS = 1.0µA

Voltage VGS = -2.3V

Drain Source Leakage Current1IDS (OFF) 10 100 pA VGS =-2.3V, VDS =+5V

4nAT

A = 125°C

Gate Leakage Current1IGSS 330pAV

DS = 0V VGS = +10V

1nAT

A =125°C

Input Capacitance CISS 2.5 pF

Transfer Reverse Capacitance CRSS 0.1 pF

Turn-on Delay Time ton 10 ns V+ = 5V RL= 5KΩ

Turn-off Delay Time toff 10 ns V+ = 5V RL= 5KΩ

Crosstalk 60 dB f = 100KHz