IPD85P04P4L-06
Parameter Symbol Conditions Unit
min. typ. max.
2)
Input capacitance Ciss - 5060 6580 pF
Output capacitance Coss - 1520 2280
Reverse transfer capacitance Crss - 60 120
Turn-on delay time td(on) - 17 - ns
Rise time tr- 10 -
Turn-off delay time td(off) - 62 -
Fall time tf- 39 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 19 25 nC
Gate to drain charge Qgd - 13 26
Gate charge total Qg- 80 104
Gate plateau voltage Vplateau - -3.5 - V
Diode continous forward current2) IS- - -85 A
Diode pulse current2) IS,pulse - - -340
Diode forward voltage VSD VGS=0V, IF=-85A,
Tj=25°C - -1 -1.3 V
Reverse recovery time2) trr - 56 - ns
Reverse recovery charge2) Qrr - 64 - nC
TC=25°C
Values
VGS=0V, VDS=-25V,
f=1MHz
VDD=-20V,
VGS=-10V, ID=-85A,
RG=3.5W
VDD=-32V, ID=-85A,
VGS=0 to -10V
VR=-20V, IF=-50A,
diF/dt=-100A/µs
2) Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C
1) Current is limited by bondwire; with an RthJC = 1.7K/W the chip is able to carry -94A at 25°C.
Rev. 1.0 page 3 2011-04-18