UAAUATENTUUUUTTA SIGNAL DIODES 100 200 MA TYPES Part Number 1N4150 * 1N4450 1N4606 Part Number 1N4451 1N4607 1N4608 DT230C DT230H DT230H1 BT2308 DT230G DT230A O0T230F * JAN and JANTX types available @ Suh Part Number (V) 1N4156 1N4157 1N4453 1N4828 1N4829 1N4830 1N5179 MPD200 MPD201 MPD202 MpD203 STBS67 MPD300 MPD301 MPD302 STB568 MPp400 MPD401 MPD402 STBS69 1 Measured @ 100nA @ Bsc Max. Co @ ov te (nA) @ Vai) @ Ir(mA) (pf) (nsec) Ve Max. Max. @ Vr() @ Ir(mA) 30 50 50 300 250 250 150 100 50 Package Type Package Type D035 D035 D035 D035 0035 D035 D035 0035 bo35 D035 Package Outline No. Package Outline No. MULTIPELLET SILICON SIGNAL DIODES Ir @ 25C Ve Max. Max. @ Vai() @ I(mA) 20 20 20 20 20 20 20 30 20 20 20 20 30 20 20 20 30 20 20 20 120 1- 40, 41, 42 Package Type DO35 D035 D035 DO35 0035 0035 DO35 D035 DO35 DO35 D035 D035 D035 D035 DO35 D035 DO35 0035 DO35 bo35 Package Outline No.Silicon Signal Diodes | This family of General Electric Double Heatsink diodes are high conductance, high speed low capacitance switching units for core and hammer driver circuits and general purpose applications. These diodes incorporate an oxide passivated planar structure built in a high resistivity, epitaxial layer grown on a low resistivity sub- strate. The 1N4150 and 1N4606 feature controlled conductance, with minimum and maxi- mum forward voltages at five levels of forward current. The 1N4450 offers con- trolled conductance at four levels of Ip from 100uA to 50mA with amaximum voltage of 1.0 volts at 200mA. This closely controlled conductance is necessary for the design of clamping and logic circuits where tight tolerances on voltage levels are required. absolute maximum ratings: (25C) 1N4450 1N4150 1N4606 Voltage Reverse 30 50 70 Volts Current Average Rectified + 200 --_> mA Recurrent Peak Forward _ 600 ___+ mA Forward Steady-State DC + 250 ________ mA Peak Forward Surge (1 usec. pulse) -___ 4 Amps Power Dissipation* + 500 _> mw Temperature Operating <+__ 65 to +200 _* C Storage a 65 to +200 C *Derate 2.85 mW/C for ambient temperatures above 25C based on a maximum junction temperature of 200C. -032+.002 oa | 1N4148-49 SEE PAGE 205 | Ga i [_1N4150 1N4450 1N4606 J \ XQ 0.155 o1a0 o180 MAX jn 8 0.06 DIMENSIONS !N INCHES L250 1250 0.022 | O18 | 0.918 CATHODE END NOTE: ALL electrical characteristics: (25C) (unless otherwise specified) 1N4450 1N4150 Forward Voltage Min. Max. Min. Max. (Is = 100A) Vr 420 540 (Ir = lmA) Vr 520 640 540 620 (Iy = 10mA) Ve 640 720 660 740 (Ir = 50mA) Ff Vr 800 920 760 860 (Ir = 100mA) + Vr 820 920 (Ip = 200mA) + Vr 1000 870 1000 (Ip = 250mA) tT Vr Breakdown Voltage (Ir = 5uA) By 40 (In = 100uA) By Reverse Current (Vaz = 30V) In 50 (Va = 80V, Ts = +150C) In 50 (Ve = 50V) Tr 100 (Va = 50V, Ta = +100C) Iz (Vr = 50V, Ta = +150C) In 100 (Vr = 70V) In 258 1N4606 Min. Max. mV 540 660 mV 650 770 mV 740 860 mV 790 920 mV 860 1000 mV 1100 mV Volts 85 Volts nA pA 100 nA 25 pA uA 250 nA1N4150 1N4450 1N4606 electrical characteristics: (25C) (unless otherwise specified) 1N4450 1N4150 1N4606 Min. Max. Min, Max. Min. Max. Capacitance (Va= OV) T Co 4 wo 1.3 pF Reverse Recovery Time (Ir =Ik= 10 to 200mA, I,, = 011+, Fig. 3) ter 4 ns (Ir = In = 200 to 400mA, I,, = 0.11, Fig. 3) ter 6 ns (Ir = 10mA, Tr = 1lmA, I,, = 0.1mA, Fig. 1) trr 6 ns (Ip = In = 10 mA, I, = ImA, Figs. 1,2 & 6) trr 6 ns (Ip = In = 10 to 200mA, I, = 0.1Iy, Fig. 4) ter 4 ns (Ir = In = 200 to 400mA, I,, = 0.11;, Fig. 4) tre 6 ns Forward Recovery Time (Ir = 200mA, tr = 0.4 nsec., tp = 100 nsec., Vir = 1.0V, Fig. 5) ter 10 ns Stored Charge (Note 1) (Ir = 10mA) Qs 42 42 42 pe +Pulsed measurement. Pulse width = 300 usec. Duty Cycle = 2%. tCapacitance as measured on Boonton Model 75A capacitance bridge at a signal level of 50 mV and a frequency of 1MHz. Stored charge is. measured on B-Line Electronics Model QS-3 stored charge meter. Pulse amplitude = 5 volix, puise width < 60 neec., rine time -- U.4 nsec, source impedence -= 10 ohms. NOTE: 1: STORED CHARGE When a forward biased diode is subjected to a reverse voltage step a reverse current will flow for a short time as a result of the stored charge consisting of minority carriers in the vicinity of the junction. The typical waveform of reverse current vs time for a diode subjected to a large reverse voltage is shown in Figure 1. The time required for the diode to recover its reverse blocking condition will depend on the quantity of charge stored and the rate at which the charge is removed by recombination inside the diode and by current flowing in the external circuit. Conventionally, the speed of a diode is characterized by the reverse recovery time, t,r, measured to some arbitrary current level as in Figure 1. However, for higher speed diodes reverse recovery time is not a satisfactory parameter for characterizing the speed of the diode since it is dependent on arbitrary circuit conditions and is very dependent on the construction of the test circuit. Stored charge, on the other hand, is measured by integrating the reverse cur- TYPICAL REVERSE rent of the diode (as shown by the shaded area in Figure 1), and is consequently much RECOVERY WAVEFORM less dependent on the construction of the test circuit and on arbitrary circuit conditions. FOR A HIGH SPEED DIODE Stored charge is a more ideal parameter for characterizing the speed of a diode since Figure 1 it represents an intrinsic characteristic of the diode and can be measured with good 9g reproducibility on low cost instruments which have direct meter readout. Stored charge can be correlated with reverse recovery time measurements on a specific t,; test jig. Typical correlation curves are shown on the graph below. References: (1) JEDEC Proposed Method for Direct Measurement of Diode Stored Charge, JS-2-65-11 (2) Measurement of Stored Charge in High Speed Diodes, T. P. Sylvan Application Note #90.30 (avail- able on request) 2591N4150 1N4450 1N4606 60 n SEC DELAY LINE TEK 109 PULSE GENERATOR TEE Ir Te | PULSE toot a i 4 I I 1 TEK 561A/ 3S76/3T77 a SAMPLING SCOPE OR RELAY YR EQUIVALENT P| L ! | oA B | ; | F INPUT 502 cs fa 50.0 | To (OUTPUT Z . INPUT Z | VR OMT. x5 VR PULSE | aoe | tort (TR) aa aa Mot | = = { 1 X100 - TEK 29! . TRIGGER DIODE SWITCHING | TIME TESTER TESTE HIGH CURRENT REVERSE RECOVERY TEST CIRCUIT Figure 2 Figure 3 TEKTRONIX TYPE 109 ORIIO Decay sece PULSE yt 502 GENERATOR Fat OR COAXIAL TEE INPUT PULSE EQUIVALENT CONNECTION ~ feta SEC ATTENUATOR ATTENUATOR DELAYED PULSE 502 50.2 rs Nit INDUCTIVE SIGNAL PROBE TRIGGER 10:1 BUT. TEKTRONIX SAMPLING ATTENUATOR SCOPEOR [i] soQ EQUIVALENT | J S50Q INPUT = HIGH CURRENT REVERSE RECOVERY TEST CIRCUIT PULSE GEN 502 Figure 4 02 50020 4500 SCOPE Figure 5 260REVERSE RECOVERY TIME- try - NANOSECONDS 1N4150 261 FORWARD VOLTAGE CHARACTERISTICS 1N4450 Ta = 25C I 1 IN4606 IN4606 | netcat contre onleerveen! ai 1 _ IN4450 STORED CHARGE AND REVERSE K IN4150 RECOVERY TIME > ~ | tag MEASURED IN 8-LINE ELECTRONICS V6 < IP fe stoma, ty MEASURED IN 4 i p TOMA, typ \ os H FOR Ip 250mA L feemeni fo aang ear rarne | LZ tb i rie ee esas Ae eg z < e Las I LZ @ Tou = ne om . Io Le z a i LT aenh tel FF Z conhve A Me Yy. | aa ae? VY | | P 4 * 9 srORED CHARGE On PICO couLoMes * * 0.4 os conmarD VOCAGE _ vetvours) 1.0 MM Figure 6 Figure 7 ~3.0 -2.8 TEMPERATURE COEFFICIENT -2.6 VERSUS FORWARD CURRENT -2.4 IN4606 oO IN4450 S -22 IN4150 95 ry p 2 -2.0 Sty ERce e; NTH r *cey < -1.8 "| & -1.6 1.4 -1.2 O! I { to 100 IF INMA Figure 8 HEATSINK STEADY SPACING STATE POWER FROM END THERMAL DISSIPATION OF DIODE RESISTANCE AT 25C BODY Cc/mw mW + DHO DHD .062" .250 700 .250" 319 550 500" 380 460 Figure 9