PD - 96338 AUTOMOTIVE GRADE AUIRF4905 HEXFET(R) Power MOSFET Features l l l l l l l l l D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS - 55V RDS(on) max. G 0.02 ID S -74A D Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRF4905 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V c Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(Thermally limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds(1.6mm from case ) Mounting Torque, 6-32 or M3 screw c d c e i Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient A W W/C V mJ A mJ V/ns C 300 10 lbf in (1.1N m) y Thermal Resistance RJC RCS RJA Units -74 -52 -260 200 1.3 20 930 -38 20 -5.0 -55 to + 175 y Typ. Max. Units --- 0.50 --- 0.75 --- 62 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/10/10 AUIRF4905 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units -55 --- --- -2.0 21 --- --- --- --- --- -0.05 --- --- --- --- --- --- --- --- --- 0.02 -4.0 --- -25 -250 100 -100 V V/C V S A nA Conditions VGS = 0V, ID = -250A Reference to 25C, ID = -1mA VGS = -10V, ID = -38A VDS = VGS, ID = -250A VDS = -25V, ID = -38A VDS = -55V, VGS = 0V VDS = -44V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- --- --- 18 99 61 96 180 32 86 --- --- --- --- --- 4.5 --- --- 7.5 --- --- --- --- 3400 1400 640 --- --- --- pF Min. Typ. Max. Units nC ns nH ID = -38A VDS = -44V VGS = -10V , See Fig.6 and 13 VDD = -28V ID = -38A RG = 2.5 RD =0.72 See Fig. 10 Between lead, f f 6mm (0.25in.) from package D G and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig.5 S Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c --- --- -74 --- --- -260 --- --- --- --- 89 230 -1.6 130 350 Conditions MOSFET symbol A V ns nC showing the integral reverse D G p-n junction diode. TJ = 25C, IS =-38A , VGS = 0V TJ = 25C, IF =-38A di/dt = -100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (See Figure 12) ISD -38A, di/dt -270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. www.irf.com 2 AUIRF4905 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4 (425V) (per AEC-Q101-002) Class H2 (4000V) (per AEC-Q101-001) Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF4905 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 1000 100 10 -4.5V 20s PULSE WIDTH Tc = 25C A 1 0.1 1 10 100 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) TJ = 25C 100 TJ = 175C 10 VDS = -25V 20s PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1 10 A 100 Fig 2. Typical Output Characteristics 1000 5 20s PULSE WIDTH TC = 175C -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 -4.5V 10 1 0.1 -VDS , Drain-to-Source Voltage (V) 4 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 10 A I D = -64A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 4 AUIRF4905 7000 5000 -VGS , Gate-to-Source Voltage (V) 6000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 4000 Coss 3000 2000 Crss 1000 0 1 10 100 I D = -38A VDS = -44V VDS = -28V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 -VDS , Drain-to-Source Voltage (V) 80 120 160 A 200 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) -ISD , Reverse Drain Current (A) 40 100 TJ = 175C TJ = 25C 10 VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 1.8 100 100s 1ms 10 10ms TC = 25C TJ = 175C Single Pulse 1 1 10 A 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF4905 80 RD V DS ID , Drain Current (A) V GS D.U.T. RG 60 - + V DD -10V 40 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 150 td(on) 175 tr t d(off) tf VGS TC , Case Temperature ( C) 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.00001 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 6 L VDS D.U.T RG IAS -20V VDD A DRIVER 0.01 tp 15V Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) AUIRF4905 2500 TOP BOTTOM 2000 1500 1000 500 A 0 25 I AS ID -16A -27A -38A 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K 12V QG .2F .3F -10V D.U.T. QGS QGD +VDS VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform www.irf.com Fig 13b. Gate Charge Test Circuit 7 AUIRF4905 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD V GS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period V[GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 8 AUIRF4905 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUF4905 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF4905 Ordering Information Base part AUIRF4905 www.irf.com Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF4905 10 AUIRF4905 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11