AUIRF4905
HEXFET® Power MOSFET
AUTOMOTIVE GRADE
www.irf.com 1
11/10/10
Features
lAdvanced Planar Technology
lLow On-Resistance
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
Description
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
- 55V
R
DS(on)
max. 0.02Ω
I
D
-74A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ -10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ -10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy(Thermally limited)
d
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
i
––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-5.0
-55 to + 175
300
10 lbf
y
in (1.1N
y
m)
Max.
-74
-52
-260
mJ
°C
A
20
930
-38
200
1.3
± 20
TO-220AB
AUIRF4905
D
S
D
G
S
D
G
PD - 96338
AUIRF4905
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S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.3mH RG = 25Ω, IAS = -38A. (See Figure 12)
ISD ≤ -38A, di/dt ≤ -270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e -55 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– -0.05 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.02 Ω
V
GS(th)
Gate Threshold Volta
g
e -2.0 ––– -4.0 V
g
fs Forward Transconductance 21 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– -25
µ
A
––– ––– -250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 100 nA
Gate-to-Source Reverse Leaka
g
e––––––-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Total Gate Char
g
e––––––180
Q
gs
Gate-to-Source Char
g
e––––––32nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e––––––86
t
d(on)
Turn-On Dela
y
Time ––– 18 –––
t
r
Rise Time ––– 99 –––
t
d(off)
Turn-Off Dela
y
Time ––– 61 ––– ns
t
f
Fall Time ––– 96 –––
L
D
Internal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 3400 –––
C
oss
Output Capacitance ––– 1400 –––
C
rss
Reverse Transfer Capacitance ––– 640 ––– pF
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Volta
g
e ––– ––– -1.6 V
t
rr
Reverse Recover
y
Time ––– 89 130 ns
Q
rr
Reverse Recover
y
Char
g
e ––– 230 350 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– ––– -74
––– ––– -260
–––
–––
–––
–––
4.5
7.5
V
GS
= -10V , See Fig.6 and 13
f
V
DD
= -28V
ID = -38A
R
G
= 2.5 Ω
T
J
= 25°C, I
S
=-38A , V
GS
= 0V
f
T
J
= 25°C, I
F
=-38A
di/dt = -100A/
µ
s
f
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -38A
f
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
V
DS
= -25V, I
D
= -38A
I
D
= -38A
V
DS
= -44V
Conditions
R
D
=0.72 Ω See Fig. 10
f
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig.5
V
GS
= 20V
V
GS
= -20V
AUIRF4905
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
Moisture Sensitivity Level 3L-TO-220 N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device Model
Class C5 (1125V)
(per AEC-Q101-005)
RoHS Compliant Yes
ESD
Machine Model
Class M4 (425V)
(per AEC-Q101-002)
Human Body Model
Class H2 (4000V)
(per AEC-Q101-001)
AUIRF4905
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
D
DS
20µs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4. 5V
-4.5V
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
1000
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -25V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -64A
D
Fig 2. Typical Output Characteristics
AUIRF4905
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
7000
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 40 80 120 160 200
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -38A
V = -44V
V = -28V
D
DS
DS
1
10
100
1000
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRF4905
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Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
20
40
60
80
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
AUIRF4905
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Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
0
500
1000
1500
2000
2500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -16A
-27A
BOTTOM -38A
D
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
AUIRF4905
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Fig 14. For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
AUIRF4905
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUF4905
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF4905
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Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF4905 TO-220 Tube 50 AUIRF4905
AUIRF4905
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