1PI6C49X0208 Rev A 01/08/13
Crystal
Oscillator
Clock Input
Control Circuit
XIN
XOUT
IN0
IN0#
IN1
IN1#
IN_SEL0 IN_SEL1 ENABLE V
DDO
8
CLK0~7
*IN0 can be single end ref clock0 and IN0# internal bias as Vdd/2
*IN1 can be single end ref clock1 and IN1# internal bias as Vdd/2
*IN-SEL[0:1] select XTAL, IN1/1# and IN0/0# input
Sync
Block Diagram
Description
The PI6C49X0208 is a high performance multi-voltage 8-outputs
CMOS Fanout Buffer with internal Crystal Oscillator. The XTAL
range is from 10MHz to 50MHz. The device has a wide range of
operating voltages of 2.5V and 3.3V. The device also provides user
selectable output VDD option, which provides excellent exibilities
to users. This device is ideal for systems that need to distribute low
jitter clock signals to multiple destinations.
Features
8 single-ended outputs Fanout Buffer
Up to 200MHz output frequency
Ultra low output additive jitter = 0.01ps (typ.)
Selectable reference inputs support Xtal (10~50MHz), single-
ended and differential
Low output skew ~ 50ps (typ.)
2.5V / 3.3V operation
User congurable output VDDO in different banks:
– Mixed 3.3V core, 2.5V, 1.8V or 1.5V output operating
supply
– Mixed 2.5V core, 1.8V, 1.5V or 1.2V output operating
supply
Industrial temperature range: –40°C to +85°C
Packaging (Pb-free & Green available):
– 32-pin TQFN (ZH)
Applications
Networking systems including switches and Routers
High frequency backplane based computing and telecom
platforms
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
CLK0
CLK1
GNDO
CLK2
CLK3
NC
CLK7
CLK6
GNDO
CLK5
CLK4
NC
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
GNDO
ENABLE
IN_SEL0
IN_SEL1
IN1
IN1#
GND
GNDO
32
31
30
29
28
27
26
25
GNDO
VDD
XIN
XOUT
IN0
IN0#
GNDO
9
10
11
12
13
14
15
16
VDDO
GND
VDDO VDDO
VDDO
Pin Conguration
12-0308
2
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Input Mode Selection Logic
IN_SEL0 IN_SEL1 Selected Input
1 1 XTAL
0 1 XTAL
1 0 IN1/1# Diff or Single End
0 0 IN0/0# Diff or Single End
Input/Output Operation State
Input State Output State
IN[0:1], IN[0:1]# open Logic Low
IN[0:1], IN[0:1]# both to ground Logic Low
IN[0:1]=High, IN[0:1]# =Low Logic High
IN[0:1]=Low, IN[0:1]# =High Logic Low
Output Mode Selection
ENABLE Output CLK0~7
GND High-impedance
VDD Enabled
Pin Description
Pin# Pin Name Type Description
1, 3, 5, 7, 18,
20, 22, 24 CLK0~7 Output Clock Outputs
2, 6, 19, 23 VDDO Power Output Power Supplier
4, 9, 16, 21, 25,
32 GNDO Power Core Ground
8, 17 NC - No Connect
15, 26 GND Power Output Ground
10 VDD Power Core Power Supplier
11 XIN Input Crystal interface
12 XOUT Output Crystal interface
13 IN0 Input Pull-down Diff or Single End
14 IN0# Input Pull-up/ Pull-
down
When IN0 is single end IN0# internal bias
as Vdd/2
27 IN1# Input Pull-up/ Pull-
down
When IN1 is single end IN1# internal bias
as Vdd/2
28 IN1 Input Pull-down REF1 Diff or Single End
30, 29 IN_SEL[0:1] Input Pull-down IN-SEL[0:1] select XTAL, IN1/1# and IN0/
IN0# input
31 ENABLE Input Synchronous active high Output Enable,
LVCMOS/TTL
12-0308
3
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Power Supply DC Characteristics (VDD/VDDO = 3.3V ± 5%, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 3.135 3.3 3.465 V
VDDO Output Supply Voltage 3.135 3.3 3.465 V
IDD Power Supply Current ENABLE = '0' 32 mA
IDDO Output Supply Current ENABLE = '0' 1 mA
Power Supply DC Characteristics (VDD/VDDO = 2.5V ± 5%, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 2.375 2.5 2.625 V
VDDO Output Supply Voltage 2.375 2.5 2.625 V
IDD Power Supply Current ENABLE = '0' 15 mA
IDDO Output Supply Current ENABLE = '0' 0.7 mA
Power Supply DC Characteristics (VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 3.135 3.3 3.465 V
VDDO Output Supply Voltage 2.375 2.5 2.625 V
IDD Power Supply Current ENABLE = '0' 29 mA
IDDO Output Supply Current ENABLE = '0' 0.6 mA
Power Supply DC Characteristics (VDD = 3.3V ± 5%, VDDO = 1.8V ± 0.2V, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 3.135 3.3 3.465 V
VDDO Output Supply Voltage 1.6 1.8 2.0 V
IDD Power Supply Current ENABLE = '0' 29 mA
IDDO Output Supply Current ENABLE = '0' 0.4 mA
Power Supply DC Characteristics (VDD = 3.3V ± 5%, VDDO = 1.5V ± 0.15V, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 3.135 3.3 3.465 V
VDDO Output Supply Voltage 1.35 1.5 1.65 V
IDD Power Supply Current ENABLE = '0' 29 mA
IDDO Output Supply Current ENABLE = '0' 0.3 mA
12-0308
4
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Power Supply DC Characteristics (VDD = 2.5V ± 5%, VDDO = 1.8V ± 0.2V, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 2.375 2.5 2.625 V
VDDO Output Supply Voltage 1.6 1.8 2.0 V
IDD Power Supply Current ENABLE = '0' 13 mA
IDDO Output Supply Current ENABLE = '0' 0.4 mA
Power Supply DC Characteristics (VDD = 2.5V ± 5%, VDDO = 1.5V ± 0.15V, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 2.375 2.5 2.625 V
VDDO Output Supply Voltage 1.35 1.5 1.65 V
IDD Power Supply Current ENABLE = '0' 13 mA
IDDO Output Supply Current ENABLE = '0' 0.3 mA
Power Supply DC Characteristics (VDD = 2.5V ± 5%, VDDO = 1.2V ± 0.06V, TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VDD Core Supply Voltage 2.375 2.5 2.625 V
VDDO Output Supply Voltage 1.14 1.2 1.26 V
IDD Power Supply Current ENABLE = '0' 13 mA
IDDO Output Supply Current ENABLE = '0' 0.3 mA
Single-Ended input DC Characteristics (TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
VIH Input High Voltage VDD = 3.3V ± 5% 2 VDD + 0.3 V
VDD = 2.5V ± 5% 1.7 VDD + 0.3 V
VIL Input Low Voltage VDD = 3.3V ± 5% -0.3 0.8 V
VDD = 2.5V ± 5% -0.3 0.7 V
VOH
Output High Voltage
(IOH = -8mA)
VDDO = 3.3V ± 5% (1) 2.6 V
VDDO = 2.5V ± 5% 2 V
VDDO = 2.5V ± 5% (1) 1.8 V
VDDO = 1.8V ± 0.2V(1) 1.5 V
VDDO = 1.5V ± 0.15V(1) 1.0 V
Output High Voltage
(IOH = -1mA) VDDO = 1.2V ± 0.06V 0.7 V
VOL
Output Low Voltage
(IOL = 8mA)
VDDO = 3.3V ± 5% (1) 2.6 V
VDDO = 2.5V ± 5% 0.5 V
VDDO = 1.8V ± 0.2V (1) 0.4 V
VDDO = 1.5V ± 0.15V (1) 0.35 V
Output Low Voltage
(IOH = 1mA) VDDO = 1.2V ± 0.06V 0.2 V
Notes:
1. Outputs terminated with 50Ω to VDDO /2. See Parameter Measurement section, "Load Test Circuit" diagrams.
12-0308
5
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Differential input DC Characteristics (TA = -40°C to 85°C)
Symbols Parameters Test Conditions Min. Typ Max. Units
IIH Input High
Current
IN[0:1],
IN[0:1]#
VDD = VIN =3.465V
or 2.625V 100 uA
IIL Input Low
Current
IN[0:1] VDD = 3.465V or
2.625V VIN = 0V -1 uA
IN[0:1]# VDD = 3.465V or
2.625V VIN = 0V -50 uA
VPP Peak-to-Peak Input Voltage (1) VDD = 3.3V 0.25 1.3 V
VDD = 2.5V 0.25 1.3
VCMR Common Mode Input Voltage
(1,2)
VDD = 3.3V 0.5 VDD -1.35V V
VDD = 2.5V 0.5 VDD -0.85V
Notes:
1. VIL should not be less than -0.3V.
2. Common mode voltage is dened as 1/2(VIH-VIL).
12-0308
6
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Storage Temperature ...........................................................–65°C to +150°C
VDD, VDDO Voltage ...............................................................–0.5V to +3.6V
Output Voltage .............................................................. –0.5V to VDD+0.5V
Input Voltage ................................................................ –0.5V to VDD+0.5V
3.3V Absolute Maximum Ratings (Above which the useful life may be impaired. For user guidelines only, not tested.)
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specication is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
AC Characteristics (Over Operating Range: VDD/VDDO = 3.3V ± 5%, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz crystal @
(Integration Range:
100Hz-1MHz)
0.05 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz reference
input @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 800 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 64 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
7
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Storage Temperature ...........................................................–65°C to +150°C
VDD, VDDO Voltage ...............................................................–0.5V to +3.6V
Output Voltage .............................................................. –0.5V to VDD+0.5V
Input Voltage ................................................................ –0.5V to VDD+0.5V
2.5V Absolute Maximum Ratings (Above which the useful life may be impaired. For user guidelines only, not tested.)
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specication is
not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect reliability.
AC Characteristics (Over Operating Range: VDD/VDDO = 2.5V ± 5%, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.06 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 800 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 63 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
8
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 3.3V ± 5%, VDDO = 2.5V ± 5%, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.05 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 800 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 62 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
9
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 3.3V ± 5%, VDDO = 1.8V ± 0.2V, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.06 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 900 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 58 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
10
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 3.3V ± 5%, VDDO = 1.5V ± 0.15V, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.07 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 900 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 53 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
11
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 2.5V ± 5%, VDDO = 1.8V ± 0.2V, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.06 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 900 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 59 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
12
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 2.5V ± 5%, VDDO = 1.5V ± 0.15V, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 200
odc Output Duty Cycle 125MHz 45 55 %
tsk(o) Output Skew (3) 80 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.08 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 200 900 ps
tEN Output Enable Time (4) 5 cycles
tDIS Output Disable Time (4) 5 cycles
MUXisolation MUX Isolation 155.52MHz 55 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 5 cycles. Min. setup time = 3ns.
12-0308
13
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
AC Characteristics (Over Operating Range: VDD = 2.5V ± 5%, VDDO = 1.2V ± 0.06V, TA = -40° to 85°C)
Parameters Description Test Conditions(1) Min. Typ Max. Units
fMAX Output Frequency
Using External Crystal 10 50
MHz
Using External Clock
Source (2) DC 125
odc Output Duty Cycle 125MHz, 5pF load 40 60 %
tsk(o) Output Skew (3) 60 ps
tjit(Ø) RMS Phase Jitter (Random)
25MHz @ (Integra-
tion Range: 100Hz-
1MHz)
0.13 ps
tjit(additive) Additive RMS Phase Jitter (Random)
125MHz @ (Integra-
tion Range: 12kHz-
20MHz)
0.01 ps
tR/tFOutput Rise/Fall Time 20% to 80% 1000 1900 ps
tEN Output Enable Time (4) 6 cycles
tDIS Output Disable Time (4) 6 cycles
MUXisolation MUX Isolation 150MHz 72 dB
Notes:
1. Unless noted otherwise, all parameters are tested with xtal @ f <= Fxtal_max,; outputs are terminated @ 50Ω to VDDO/2, see waveforms.
2. Diff external clock source is driving IN0/IN0# and IN1/IN1# input. IN0/IN1 can be single end ref clock when IN0# /IN1# set as VDD/2
3. Identical conditions: loading, transitions, supply voltage, temperature, package type and speed grade.
4. These parameters are guaranteed, but not tested. Max delay is 6 cycles. Min. setup time = 3ns.
12-0308
14
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Waveforms
Output to Output Skew – tsk(O)
CLKx
VOH
VDDO/2
VOL
tSK(O)
CLKy
VOH
VDDO/2
VOL
tSK(O)
Duty Cycle – tDC
ENABLE Timing Diagram
Z = 50-Ohm
Scope
50-
Ohm
VDDO
GND
VDD
[+VDDO/2]
[-VDDO/2]
[VDD - VDDO/2]
AC Test Circuit Load
Crystal Characteristic (link to "http://www.pericom.com/products/timing/crystals/index.php" for more de-
tailed and different size crystal specications)
Parameters Description Min Typ Max. Units
OSCmOde Mode of Oscillation Fundamental
FReQ Frequency 10 25 50 MHz
eSR(1) Equivalent Series Resistance 30 50 Ohm
ClOad Load Capacitance 18 pF
CShunt Shunt Capacitance 7 pF
dRIVe level 1 mW
Note: 1. ESR value is dependent upon frequency of oscillation
50%
VOL
tPW
VOH
tPERIOD
tDC = (tPW / tPERIOD ) x 100%
CLK[0:7]
ENABLE
IN
12-0308
15
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Application Notes
Crystal circuit connection
The following diagram shows PI6C49X0208 crystal circuit connection with a parallel crystal. For the
CL=18pF crystal, it is suggested to use C1=18pF, C2=18pF. C1 and C2 can be adjusted to ne tune to the tar-
get ppm of crystal oscillator according to different board layouts. R1 is not recommended.
C1
18pF
Crystal(CL=18pF)
C2
18pF
0Ω
R1
XTAL_IN
XTAL_OUT
Crystal Oscillator Circuit
12-0308
16
PI6C49X0208
High Performance 1:8 Multi-Voltage CMOS Buer
PI6C49X0208 Rev A 01/08/13
Ordering Information(1,2,3)
Ordering Code Package Code Package Description
PI6C49X0208ZHIE ZH Pb-Free and Green 32-pin TQFN
Notes:
1. Thermal characteristics can be found on the company web site at www.pericom.com/packaging/
2. E = Pb-free and Green
3. X sufx = Tape/Reel
Pericom Semiconductor Corporation • 1-800-435-2336 www.pericom.com
DATE: 06/30/11
DESCRIPTION: 32-contact, Thin Quad Flat No-Lead (TQFN)
PACKAGE CODE: ZH32
DOCUMENT CONTROL #: PD-2070 REVISION: B
Notes:
1. All dimensions are in mm. Angles in degrees.
2. Coplanarity applies to the exposed pad as well as the terminals.
3. Refer JEDEC MO-220
4. Recommended land pattern is for reference only.
5. Thermal pad soldering area (mesh stencile design is recommended)
11-0147
Note:
For latest package info, please check: http://www.pericom.com/products/packaging/mechanicals.php
12-0308