BCP54...-BCP56... NPN Silicon AF Transistors * For AF driver and output stages 4 * High collector current 3 2 * Low collector-emitter saturation voltage 1 * Complementary types: BCP51...BCP53 (PNP) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCP54 * 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP55 * 1=B 2=C 3=E 4=C - - SOT223 BCP55-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-10 * 1=B 2=C 3=E 4=C - - SOT223 BCP56-16 * 1=B 2=C 3=E 4=C - - SOT223 * Marking is the same as the type-name 1Pb-containing package may be available upon special request 1 2008-10-10 BCP54...-BCP56... Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCP54 45 BCP55 60 BCP56 80 Collector-emitter voltage Unit VCER BCP54 45 BCP55 60 BCP56 100 Collector-base voltage VCBO BCP54 45 BCP55 60 BCP56 100 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp 10 ms I CM 1.5 Base current IB 100 Peak base current I BM 200 Total power dissipation- Ptot 2 W 150 C A mA TS 120C Junction temperature Tj Storage temperature T stg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1For Value Unit 15 K/W calculation of R thJA please refer to Application Note Thermal Resistance 2 2008-10-10 BCP54...-BCP56... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BCP54... 45 - - IC = 10 mA, IB = 0 , BCP55... 60 - - IC = 10 mA, IB = 0 , BCP56-10, -16 80 - - IC = 100 A, IE = 0 , BCP54... 45 - - IC = 100 A, IE = 0 , BCP55... 60 - - IC = 100 A, IE = 0 , BCP56-10, -16 100 - - 5 - - Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage V(BR)EBO IE = 10 A, IC = 0 Collector-base cutoff current A I CBO VCB = 30 V, IE = 0 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C - - 20 DC current gain1) - h FE IC = 5 mA, VCE = 2 V 25 - - IC = 150 mA, V CE = 2 V, BCP54/BCP55 40 - 250 IC = 150 mA, V CE = 2 V, BCP56-10 63 100 160 IC = 150 mA, V CE = 2 V, BCP54-16...BCP56-16 100 160 250 IC = 500 mA, V CE = 2 V 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, V CE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse test: t < 300s; D < 2% 3 2008-10-10 BCP54...-BCP56... DC current gain hFE = (IC) VCE = 2 V 10 3 h FE Collector-emitter saturation voltage IC = (VCEsat), hFE = 10 BCP 54...56 EHP00268 5 C EHP00271 mA 10 3 100 C 25 C 10 2 BCP 54...56 10 4 -50 C 5 100 C 25 C -50 C 10 2 10 1 10 1 5 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 C 4 IC = (V BEsat), hFE = 10 C BCP 54...56 0.2 V 0.8 V CEsat EHP00270 10 4 CBO mA BCP 54...56 EHP00269 nA max 10 3 10 0.6 0.4 Collector cutoff current ICBO = (TA) VCBO = 30 V Base-emitter saturation voltage 10 4 0 3 100 C 25 C -50 C 10 2 10 2 typ 10 1 10 1 10 0 10 0 0 0.2 0.4 0.6 0.8 V 10 -1 1.2 V BEsat 0 50 100 C 150 TA 4 2008-10-10 BCP54...-BCP56... Transition frequency fT = (IC) VCE = 10 V 10 3 EHP00267 2.4 MHz W 5 P tot fT BCP 54...56 Total power dissipation Ptot = (TS) 1.6 10 2 1.2 5 0.8 0.4 10 1 10 0 5 10 1 5 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 C 75 C Permissible Pulse Load RthJS = (tp ) 150 TS Permissible Pulse Load Ptotmax/P totDC = (tp) 10 3 Ptotmax /PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2008-10-10 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BCP54...-BCP56... 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2008-10-10 BCP54...-BCP56... Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2008-10-10