,,. .
w“
I1
‘:,.L+. -
SILICON 4.0 AMPER~~~##i’
CONTROLLED RECTIFIERS 30 thru 69~,.~,kTs
~.~,i..?
...PNPN devices designed for high volume consumer applications ,,\+\.>yK,:K*,:i’:
.\+. *,.
.::.:$.:,,
such as temperature, light, and speed control; process and remote ,~:+
.s3,.,<**
“!~$$
control, and warning systems where reliability of operation is i:,)
.,$;t.i,’~:,$~
*
important.
@Passivated Surface for Reliability and Uniformity
@power Rated at Economical prices
@Practical Level Triggering and Holding Characteristics
*Flat, Rugged, ThermopadA Construction for Low Thermal Resist-
ance, High Heat Dissipation and Durability ~\.?.%s:
.:i...
eRecommended Electrical Replacement for C106 ,\i,
,.$:=\+,:j~...!
:$ $8.
:+,., ‘“)
. ,,.,..
MAXIMUM RATINGS (TJ =100°C unless otherwiw noted.)
Rating
‘Repetitive Peak Forward and Reverse
Blocking Voltage (Note 1)
(1/2 Sine Wave) 2N6236
(Gate Open, 2N6237
TJ =-40to +11 O°C) 2N6238
2N6239
2N6240
2N6241
‘Non-Repetitive Peak Reverse Blocking Voltage
(1/2 Sine Wave, 2N6236 $?
Gate Open, 2N6,23%:~ ‘“
TJ =-40 to +110°C) 2N,,9,*g:::f:
*6239””J
$%?g~~
..
‘Averaga On-State Current ~.:!,.~:,...,,,t.,
~t,$++.,4.s‘
*l./
(Tc =-40 to +90°C) ,::’1...$~
(Tc =+1 OO°C) ,g$ .+, ‘NY$
,,.,
‘Surga On-State Currerr~~~$& ,.~
(1/2 Sine Wave, 6@~~j$$j: +90°C)
(1/2 Sine Wave~,~ !,mky~, “YC =+900C)
..,,. ..~!,,.
:ircuit Fusing ~,@i~rations
(TJ =-4~w +~~~°C, t=1.0 to 8.3 ms)
*peak ~&K’:%<@r
(Pul*,@<*h =10 ps)
‘Am~~&ate Power
(t,~%.~ ms)
.,..
‘eak Forward Gate Current
‘eak Reverse Gate Voltage
‘Oparating Junction Temperature Range
‘Storaga Temperature Range
Mounting Torque
(Note 2)
PG(AV)
IGM
VRGM
TJ
Tstg
—
2.6
0.5
0.1
0.2
6.0
-40 to +110
-40 to +150
6.0
,. ,$,.,
,,./;<,
*:\.
‘.?..
$$<Urslt
J’voits
volts
Amp
Amp
A2S
Watts
Watt
+
Amp
volts
Oc
Oc
in.lb
1
HERMAL CHARACTERISTICS
Cheratieriatic Symbol Min Max Unit
‘Thermal Resistance, Junction ReJC –3.0 Qclw
to Case
rharmal Resistance Junction ReJA – 75 Oclw
to Ambient
●indicates JEDEC Registered Data.
ATradamark of Motorola Inc.
PIN
L;2~G ~,
*7
HEAT SINK
CONTACT AREA
IBOTTOM)
INCHES MILLIMETERS.
DIM MIN MAX MIN MAX
A0.270 0.330 6.860 8.380
B0.070 0.130 1.770 3.300
c0.390 0.450 9.910 11.430
00.020 0.026 0.508 0.660
E0.150 NOM 3.810 NOM
F0.090 TP 2.290 TP
G0.025 0.035 0.835 0.889 .
H0.130 0.175 3.300 4.450
J0.115 0.118 2.910 3.000
K0.595 0.655 15,110 18.650
L0.015 0.025 0.381 0.635
CASE ?7-02
MOTOROLA INC., 1973 DS 6538R
.,-,~-,,,,,
:;, , ~“” ,.,.
., ,,
,,
,’ ;,,,, ,,
,,, ,’
,,. ,,,,
:“, ,
f,, ,
., ,.,
,., ,ELECTRICAL CHARACTERISTICS (Tc =25°C unl~s otherwise noted, RGK =1000 ohms.)
,,
,,.
Charatieristics Symbol Min Typ Max Unit
*Peak Forward Blocking Current (Note 1)IDRM
(hated VDRM, TJ =110°C) PA
,, ——200
,, “Peak Reverse Blocking Current (Note 1)IRRM
(Rated VRRM, TJ =110°C) WA
——200
*Peak Forward “On” Voltage VTM vol~::,,
(ITM =8.2A Peak, Pulse Width =1to 2ms, 2% Duty Cycle) —2.2 ,\.*\ ~.~fy
—.vt~:~.Is..
Gate Trigger Current (Continuous dc) ....
IGT
(VAK =12 Vdc, RL= 240hrns) $:,,1,,
?:,*,:P
——200 .,*:+ KR,,,’‘“
I I Gate Non-Trigger Voltage Ve nI
I‘: “~+$,.*/.\
,,4.::)
FIGURE 1- @:&@,~M CASE TEMPERATURE FIGURE 2 – MAXIMUM AMBIENT TEMPERATURE
~~~. 82~ u-Ou-Uu” 3“- ,o” -UL
30 IIN
,’. F4,0 00.1 0,2 0.3 0.4 0.5 0.6 0.7 0.8
lT(Av), AVERAGE FORWARDCUR”RENT(AMP) IT{AV), AVERAGE FORWAROCURRENT(AMP)
~~ ~@ M070ROLA.. Semiconductor Products Inc. —
:, ,. Printed in Switzerland
,., DS 6~8 RI
