MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TMD1414-2C
TECHNICAL DATA
FEATURES
n
HIGH POWER
n
BROAD BAND INTERNALLY MATCHED
P1dB=34.5dBm at 13.75GHz to 14.5GHz
n
HIGH GAIN
n
HERMETICALLY SEALED PACKAGE
G1dB=26.0dB at 13.75GHz to 14.5GHz
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain Supply Voltage V
DD
V 10
Gate Supply Voltage V
GG
V -10
Input Power P
in
dBm 20
Flange Temperature T
f
°
C -40
∼
+90
Storage Temperature T
stg
°
C -65
∼
+175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Operating Frequency
f
GHz 13.75
14.5
Output Power at 1dB Gain
Compression Point P
1dB
dBm 32.0 34.5
1dB Gain Compression
Point G1dB
dB 21.0 26.0
Gain Flatness
∆
G dB
±
1.0
Drain Current IDD A
1.4 1.8
Power Added Efficiency
η
add
VDD=7V
VGG=-5V
%
29
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006
2
TMD1414-2C
PACKAGE OUTLINE (7-BA15A)
Recommended Bias Configuration
TMD1414-2C
1000pF
1000pF
47
μ
F
47
μ
F
2:RF Input
5:RF Output
GND : Base Plate
50
Ω
Matching 50
Ω
Matching
3,4:VDD
1:VGG
0.5pF
0.5pF
2.6
±
0.2 2.6
±
0.2
8.8
±
0.2
13.4
±
0.2
17.8
±
0.2
8.35
±
0.2
2.0
±
0.5
2.0
±
0.5
0.1
±
0.05
0.75
±
0.2
0.254
±
0.2
1.004
±
0.2
2.4 MAX.
0.25
±
0.1
k
l
m
n
o
2.4
4-C1.5
j
Two VDD pins do not have to be
biased at the same time, but at
least one of the pins has to be
biased.
In case only one pin is biased,
The Other pin has to be opened.
Unit in mm
j
:VGG
k
: RF Input
lm
: VDD
n
: RF Output
o
: Vdet
•
T
TMD 1414
- 2C
6:Vdet 10k
Ω
0.5-1pF