2N6107
2N6292
Prelim. 9/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
HIGH SPEED MEDIUM POWER
COMPLEMENTARY PAIR
TRANSISTORS
FEATURES
•Silicon Planar Epitaxial Base Transistors
•Medium Power Switching
•Linear Applications
VCBO Collector – Base Voltage (IE= 0)
VCEX Collector – Emitter Voltage (RBE = 100
W
)
VCEX Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICContinuous Collector Current
IBBase Current
Ptot Total Dissipation at Tcase = 25°C
Tstg Operating and Storage Temperature Range
TJJunction Temperature
80V
80V
70V
5V
7A
3A
40W
–65 to 150°C
150°C
MECHANICAL DATA
Dimensions in mm
Pin 1 – Base TO220
Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
3.61 Dia.
123
5.08
2.54
0.39
Ref.
1.26
13.51
8.76
15.11
5.14
2.54
10.29
2.74
0.81
Typ.
4.57
6.35
PNP 2N6107
NPN 2N6292
PNP 2N6107 NPN 2N6292
Parameter Test Conditions Min. Typ. Max. Unit
2N6107
2N6292
Prelim. 9/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
ICEX
ICEO
IEBO
VCEO(sus)*
VCER(sus)*
VCE(sat)*
VBE(on)*
hFE*
hfe
ft
Ccbo
Collector – Cut–Off Current
(VBE = – 1.5V)
Collector – Cut–Off Current
Emitter Cut–Off Current
Collector – Emitter Sustaining Voltage
Collector – Emitter Sustaining Voltage
Collector – Emitter Saturation Voltage
Base – Emitter Voltage
DC Current Gain
Small Signal Current Gain
Transition Frequency
Collector – Base Capacitance
0.1
2
1
1
70
80 1
3.5
1.5
3
30 150
2.3
20
10
4250
mA
V
—
MHz
pF
VCE = 80V
VCE = 80V TC = 150°C
VCE = 60V IB= 0
VEB = 5V IC= 0
IC= 0.1A
IC= 0.1A RBE = 100
W
IC= 3A IB= 0.3A
IC= 7A IB= 3A
IC= 3A VCE = 4A
IC= 7A IB= 3A
IC= 3A VCE = 4A
IC= 7A VCE = 4A
IC= 0.5A VCE = 4A
f = 50KHz
IC= 0.5A VCE = 4V NPN
IC= 0.5A VCE = 4V PNP
VCB = 10V f = 1MHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse test tp= 300
m
s ,
d
=1.5%
For PNP types Voltage and Current Values are Negative.
THERMAL DATA
Parameter Min. Typ. Max. Unit
Rth-j-case Thermal resistance Junction-Case 3.12 °C/W
Rth-j-amb Thermal resistance Junction-ambient 70 °C/W
