GENL INSTR/ POWER + P-R-E-L> le Med SbE D MM 3890137 Ooo4guq 43? GEGIC N+-+A+Re Ye x > General Semiconductor 4 s Industries, Inc. T-62-(1\ natal =e Le STS] Coreen ie TRANSZORB* TVS isl [Osi ais tt ats) 1500 WATTS UNIDIRECTIONAL & BIDIRECTIONAL FEATURES 1500 watts peak power Low lead inductance * Voltage range: 5.0 to 170 volts Hermetic ceramic package JANTX equivalent processing available per MIL-S-19500 (consult factory) DESCRIPTION CASE MAXIMUM RATINGS * 1500 watts Peak Power dissipation (10/1000ps) * teamping (0 volts to BV min unidirectional): < 1x 10 seconds + Operating and Storage Temperature: -55 to +175C MECHANICAL CHARACTERISTICS * Hermetic ceramic surface mountable case + Gull-wing or J-Bend lead configurations * Terminals: Copper with Nickel- Goid plate * Body marked with type code (see table on next page), logo, and date code. Cathode (positive end) marked with polarity band (unidi- rectional only). This series of TransZorb transient voltage suppressors, available in her- metic surface mountable packages, is designed to optimize space on printed circuit boards and ceramic substrates, to protect sensitive components from transient voltage damage. The her- metically sealed ceramic package provides high reliability under the most demanding environmental conditions. Processing to the requirements of MIL- S-19500 is available. TransZorb transient voltage sup- pressors are characterized by theirhigh surge capability, extremely fast re- sponse time, and low on-state imped- ance. These silicon avalanche devices start to conduct at low currents with a minimum breakdown voltage (BV) and will limit a transient to the clamping voltage (Vc), which depends on the transient current amplitude and dura- tion. The HSMC series, rated for 1500 waits during a one millisecond pulse, will protect sensitive circuits against transients induced by lightning and inductive load switching trom motors or relays. They are also effective against electrostatic discharge (ESD) and nuclear electromagnetic pulse (NEMP). ABBREVIATIONS & SYMBOLS YR BV, Note: A TransZorb TVS is normaily selected ac- cording to the reverse Stand Gif Voltage {VR} which shouk be equal to or greater than thedg or contnuous paak operating vollage fevel teiny This is the munimum Braakdewn Stand Off Voltage: Appled Re- verse Voltage to assure a non conductivecondition. (See Note 1) Voltage the device wail exhiort and is used to aasure that conduction does not occur pnor to this voltage level at 25C Maximum Clamping Vollage. The maximum peak voltage appearing across the TransZormb TVS when subjected to the peak pulse cur- tent 1 a one millisecond time interval, The peak pulse voltages are the combination of vollage tise due to both the series rasis- tance and thermal nse, Peak Pulse Current - See Figura 2 Peak Pulse Power Reverse Leakage FIGURE 1 Peak Pulse Power vs Pulse Time FIGURE 2 Pulse Waveform = ay z = a Pp - Peak Pulse Power - KW 2 100s Ips 1Ousec 100psec {Waveform -- See Figure 2} Non-repetitive 1, Pulse Time sec lbp - Peak Pulse Current - % lpo tms 10ms 8 o Oo wpa PARAMETERS, {, = 10psec = 1000yusec Halt Value - = @, 1 1 10 x 1000 by REA 1 2 3 t- Time msec TRANSZORB? is a registered trademark of General Semiconductor Industnes, inc. 1-58 GSI reserves the right to make any electncal or mechanwal changes as specified herein.GENL INSTR/ POWER 5SbE D MM 3890137? 0004950 659 MGIC TERISTICS @ 25C ow GSI = a Part Number Breakdown Minimum a] Voltage Reverse Fs Unidirectional BV @L, Leakage g% Bidirectional volts @v, a Gull-Wing Modified J-Bend i HSMCG5.0 HSMCJ5.0 HSMCG5.0A HSMCJ5.0A 1 HSMCG6.0 HSMCJ6.0 HSMCG6.0A HSMCJ6.0A HSMCG6.5C HSMCJ6.5C HSMCG65CA = HSMCJ6.5CA HSMCG7.0 HSMCJ7.0 HSMCG7.0A HSMCJ7.0A HSMCG7.5C HSMCJ7.5C HSMCG7.5CA HSMCJ7.5CA HSMCG8.0 HSMCJ8.0 HSMCG8.0A HSMCJ8.0A HSMCG8.5C HSMCJ8.5C HSMCG8.5CA HSMCJ8.5CA HSMCG9.0 HSMCJ9.0 HSMCG9.0A HSMCJ9.0A HSMCG9.0C HSMCJ9.0C HSMCGS.0CA HSMCJ9.0CA eoeoeoe OOM @ HSMCGI0 HSMCJ10 @ HSMCGIOA HSMCJ10A @ HSMCG10C HSMCJ10C @ HSMCGI0CA HSMCJ10CA @ HSMCG12 HSMCJ12 @ HSMCG12A HSMCJ12A @ HSMCG12C HSMCJ12C @ HSMCG12CA HSMCJ12CA @ HSMCG13 HSMCJ13 @ HSMCGI3A HSMCJ13A HSMCG14 HSMCJ14 HSMCG14A HSMCJ1dA HSMCG14C HSMCJ14C HSMCG14CA = HSMCG14CA @ HSMCGI5 HSMCJ15 # HSMCGI5A HSMCJ15A @ HSMCG15C HSMCJ15C @ HSMCG15CA HSMCJ1SCA HSMCG16 HSMCJ16 HSMCG16A HSMGJ16A HSMCG17 HSMCJ17 HSMCG17A HSMCJ17A HSMCG18 HSMCJ18 HSMCG1BA HSMCJ18A @ HSMCG18C HSMC118C @ HSMCG18CA HSMCJ18CA HSMCG20 HSMCJ20 HSMCG20A HSMCJ20A HSMCG22 HSMCJ22 HSMCG22A HSMCJ22A HSMCG22C HSMCJ22C HSMCG22CA HSMCJ22CA HSMCG24 HSMCJ24 HSMCG24A HSMCJ24A HSMCG24C HSMCJ24C HSMCG24CA =HSMCJ24CA HSMCG26 HSMCJ26 HSMCG26A HSMCJ26A oe @ HSMCG26C HSMCJ26C # HSMCG26CA HSMCI26CA @ HSMCG28 HSMCJ28 * HSMCG28A HSMCJ28A @ HSMCG30 HSMCJ30 + HSMCG30A HSMCJ30A HSMCG30C HSMCJ30C HSMCG30CA HSMCJ30CA HSMCG33 HSMCJ33 HSMC-G33A HSMCJ33A HSMCG33C HSMCJ33C HSMCG33CA HSMCJ33CA + AANDAMAAAMTAADTHAAGAATDAAAATAATAAA TAA AA AAG Aaa aga naman 1-59GENL INSTR/ POWER SBE D MM 3890137 0004951 595 MGIC Gsl Part Number Breakdown Minimum Voltage Reverse Unidirectonal Device BV@I Leakage Bidirectional Marking volts @V Code R Gul-Wing Modified J-Bend BH HSMCG36 HSMCJ36 GSH obs, Coe 400 1 5 # HSMCG36A HSMCJ36A GSK 6: ed 400 1 5 HSMCG36c HSMCJ36C GSN 40.0 1 5 HSMCG36CA HSMCJ36CA GSP 40.0 1 5 HSMCG40 HSMCU40 ass 44.4 1 5 @ HSMCG40A HSMCJ40A GST 44.4 1 5 HSMCG40C HSMCv40C GSX 44.4 1 5 HSMCG40CA HSMCJ40CA GSY 44.4 1 5 HSMCG43 HSMCJ43 GTB 478 1 5 HSMCG43A HSMCJ43A GTC 478 5 5 @ HSMCG43C HSMCJ43C GTG 47.8 1 5 # HSMCG43CA - HSMCJ43CA GTH 47.8 1 5 HSMCG48 HSMCu48 GTM 533 1 5 HSMCG48A HSMCJ48A GTN 53.3 1 5 HSMCG51 HSMCJ5i GTV 567 i 5 HSMCGSIA HSMCJS1A GTW 567 1 5 HSMCG58 HSMCJ58 GTz 644 1 5 HSMCG58A HSMCJ58A GUA 64.4 1 5 HSMCG64 HSMCJ64 GUH 71.1 1 5 HSMCG64A HSMCU64A GUK a 711 1 5 HSMCG70 HSMCJ70 GUY FO ad 778 1 5 HSMCG70A HSMCJ70A GUW fice FOTN] 778 1 5 HSMCG78 HSMCJ78 GVA : 867 1 5 HSMCG78A HSMCJ78A GVF beg age 86.7 1 5 HSMCG90 HSMCJ90 GVK bee: 100 1 5 HSMCG90A HSMCJ90A GvVa L = 100 1 5 HSMCG100 HSMCJ100 GVT 411 1 5 HSMCG100A = HSMCJ100A Gvu 114 1 5 HSMCG100CA = HSMCJ100CA GVX 114 1 5 HSMCG110 HSMCJ110 GWA 122 1 5 HSMCG110A = HSMCU110A GWB 122 1 5 HSMCG120 HSMCJ120 GWE 133 1 5 HSMCG120A = HSMCJ120A GWF 133 1 5 HSMCG130 HSMCJ130 GWK 144 1 5 HSMCG130A = HSMCJ130A GWL 144 1 5 HSMCG150 HSMCJ150 Gwe 167 1 5 HSMCGI50A = HSMCJi50A GWQ FLESE She] 167 1 5 HSMCG160 HSMCJ160 GWT BeeBO ree] 178 1 5 HSMCG160A = HSMCJ160A Gwu eee | 178 1 5 HSMCG170 HSMCJ170 Gwx ate cee | 189 i 5 HSMCG170A = HSMCJ170A Gwy SG] 189 1 5 HSMCG170CA = HSMCJ170CA GXB Meck) 189 1 5 : mea eee MIL PROCESSING High reliability to the requirements of MIL-S-19500 is available * To specify devices with screening equivalent to JANTX level, add suffix -H1 to the part number For example, HSMCG36A-H1 = 36V unidirectional suppressor with JANTX equivalent screening. + To specify devices with Group B equivalent sample tests in addition to JANTX equivalent screening, add sutfx -H2 to the part number For example, HSMC36A-H2 = 36V unidirectional suppressor with JANTX equivalent screening AND Group B processing. Preferred voltage: Popular design choices which allow shorter lead times and greater scheduling flexibility Other voltages available upon request. Consult factory 1-60GENL. INSTR/ POWER SBE D MM 3690137 0004952 421 MEGIC CASE OUTLINE "GULL-WING" C"BEND (MODIFIED J-BEND) t DIMENSIONS IN INCHES A Cc A B Cc DiE EF K L + | MIN | .108 | .260] .225 | .330| .087 | .380 | .024 | .018 MAX} .128 | .280] .245 | .350] .105 | .400| .032 | .033 +B * B DIMENSIONS IN MILLIMETERS f MIN | 2.74|6.60 | 5.72| 9.64] 2.21 | 9.64| 6101 .457 + MAX} 3.25 | 7.11 | 6.22] 10.16) 2.67{10.16] .810 | .965 >| i+K ad tile Typical Standoff Height: 0.004" - 0.012" (0.1mm - 0.3mm) |_______ +_D APPLICATIONS RECOMMENDED PAD SIZES GULL-WING General Semiconductor Industries surface mountable pack- (Pad distances equal layout for SO-28.) ages are designed specifically for transient voltage suppres- sion. The wide leads assure a large surface contact for good r 0.310" heat dissipation, and a low resistance path for surge current =a flow to ground. These high speed transient voltage suppres- 0.130" sors can be used to effectively protect sensitive components such as integrated circuits and MOS devices. A 1500W (HSMC) device is normally selected when the transient threat is from induced lightning conducted via external leads or I/O lines. It is also used to protect against switching transients induced by large coils or industrial mo- tors. A system's inherent impedance at the component level is usually high enough to limit transient current to within the peak pulse currant (Ipp) rating of this series. Inan overstress condition, the failure mode is a short circuit. =o >| f*-0.050" MODIFIED J-BEND + 0.270->| t 0.130" | f+0.050" FIGURE 3 Derating Curve 75 N r (See Figure 1 for Peak Pulse vs Pul: Characteristics) } se Time 50 25 Peak Pulse Power (Pp) or Current (Ipp) in percent of 25C rating N \ 0 50 100 150 T Temperature C 200 1992 General Semiconductor Industries, Inc. TRANSZORB is a registered trademark of General Sariconductor Industries, Inc. 1-61 Bie