C106D1 - ON Semiconductor - Datasheet.Live

August, 2005 − Rev. 8 1Publication Order Number:

C106/D

C106 Series

Preferred Devices

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Glassivated PNPN devices designed for high volume consumer

applications suc h a s temperature, light, and speed control; process and

remote control, and warning systems where reliability of operation is

important.

Features

•Glassivated Surface for Reliability and Uniformity

•Power Rated at Economical Prices

•Practical Level Triggering and Holding Characteristics

•Flat, Rugged, Thermopad Construction for Low Thermal Resistance,

High Heat Dissipation and Durability

•Sensitive Gate Triggering

•Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−225AA

CASE 077

STYLE 2

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

SCRs

4 A RMS, 200 − 600 Volts

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MARKING DIAGRAM & PIN ASSIGNMENT

Y = Year

WW = Work Week

C106xx = Device Code

xx = B, D, D1, M, M1

G = Pb−Free Package

YWW

C106xxG

1. Cathode

2. Anode

3. Gate

C106 Series

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Max Unit

Peak Repetitive Off−State Voltage (Note 1)

(Sine Wave, 50−60 Hz, RGK = 1 kW,

TC = −40° to 110°C) C106B

C106D, C106D1*

C106M, C106M1*

VDRM,

VRRM

200

400

600

On-State RMS Current

(180°Conduction Angles, TC = 80°C) IT(RMS) 4.0 A

Average On−State Current

(180°Conduction Angles, TC = 80°C) IT(AV) 2.55 A

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, TJ = +110°C) ITSM 20 A

Circuit Fusi ng Considerat ions (t = 8.3 ms ) I2t 1.65 A2s

Forward Peak Gate Power

(Pulse Width v1.0 msec, TC = 80°C) PGM 0.5 W

Forward Average Gate Power

(Pulse Width v1.0 msec, TC = 80°C) PG(AV) 0.1 W

Forward Peak Gate Current

(Pulse Width v1.0 msec, TC = 80°C) IGM 0.2 A

Operating Junction Temperature Range TJ−40 to +110 °C

Storage Temperature Range Tstg −40 to +150 °C

Mounting Torque (Note 2) −6.0 in. lb.

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

2. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower

case-to-sink thermal resistance. Anode lead and heatsink contact pad are common.

THERMAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Max Unit

T h er mal Resistance, Junction−to−Case RqJC 3.0 °C/W

T h e r m a l Resistance, Junction−to−Ambient RqJA 75 °C/W

Maximum Lead Tem perat ure for Soldering Purpos es 1/ 8 in. from Cas e for 10 Seconds TL260 °C

ORDERING INFORMATION

Device Package Shipping†

C106B TO−225AA 500 Units / Box

C106BG TO−225AA

(Pb−Free) 500 Units / Box

C106D TO−225AA 500 Units / Box

C106DG TO−225AA

(Pb−Free) 500 Units / Box

C106D1* TO−225AA 500 Units / Box

C106D1G* TO−225AA

(Pb−Free) 500 Units / Box

C106M TO−225AA 500 Units / Box

C106MG TO−225AA

(Pb−Free) 500 Units / Box

C106M1* TO−225AA 500 Units / Box

C106M1G* TO−225AA

(Pb−Free) 500 Units / Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*D1 signif i es European equiv alent for D suffix and M1 signifies European equivalent for M suffix.

C106 Series

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current

(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C

TJ = 110°C

IDRM, IRRM −

−−

−10

100 mA

ON CHARACTERISTICS

Peak Forward On−State Voltage (Note 3)

(ITM = 4 A) VTM − − 2.2 V

Gate Trigger Current (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C

TJ = −40°C

IGT −

−15

35 200

500

Peak Reverse Gate Voltage (IGR = 10 mA) VGRM − − 6.0 V

Gate Trigger Voltage (Continuous dc) (Note 4)

(VAK = 6 Vdc, RL = 100 Ohms) TJ = 25°C

TJ = −40°C

VGT 0.4

0.5 0.60

0.75 0.8

1.0

Gate Non−Trigger Voltage (Continuous dc) (Note 4)

(VAK = 12 V, RL = 100 Ohms, TJ = 110°C) VGD 0.2 − − V

Latching Current

(VAK = 12 V, IG = 20 mA) TJ = 25°C

TJ = −40°C

IL−

−0.20

0.35 5.0

7.0

Holding Current (VD = 12 Vdc)

(Initiating Current = 20 mA, Gate Open) TJ = 25°C

TJ = −40°C

TJ = +110°C

IH−

−

0.19

0.33

0.07

3.0

6.0

2.0

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of Off−State Voltage

(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

dv/dt − 8.0 − V/ms

3. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

4. RGK is not included in measurement.

+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak On State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

C106 Series

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JUNCTION TEMPERATURE ≈ 110°C

100

110

3.6

0 .4 .8 1.61.2 2.0 2.4 3.2

4.0

IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)

HALF SINE WAVE

RESISTIVE OR INDUCTIVE LOAD.

50 to 400 Hz

2.8 3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6

IT(AV) AVERAGE ON-STATE CURRENT (AMPERES)

HALF SINE WAVE

RESISTIVE OR INDUCTIVE LOAD

50 TO 400Hz.

C°T , CASE TEMPERATURE ( C)

P , AVERAGE ON-STATE POWER DISSIPATION (WATTS)

(AV)

Figure 1. Average Current Derating Figure 2. Maximum On−State Power Dissipation

100

95−40 −25 −10 205355080

110

TJ, JUNCTION TEMPERATURE (°C)

GT mI

Figure 3. Typical Gate Trigger Current versus

Junction Temperature Figure 4. Typical Holding Current versus

Junction Temperature

0.9

0.2

0.3

0.4

0.7

1.0

0.8

95−45 −25 −10 205355080

0.6

110

TJ, JUNCTION TEMPERATURE (°C)

0.5

Figure 5. Typical Gate Trigger Voltage versus

Junction Temperature Figure 6. Typical Latching Current versus

Junction Temperature

, GATE TRIGGER CURRENT ( A)

1000

95−40 −25 −10 205355080

100

110

TJ, JUNCTION TEMPERATURE (°C)

HmI, HOLDING CURRENT ( A)

1000

95−40 −25 −10 205355080

100

110

TJ, JUNCTION TEMPERATURE (°C)

LmI, LATCHING CURRENT ( A)

, GATE TRIGGER VOLTAGE (V)

C106 Series

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The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with

competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it

compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for

mounting compatibility.

ON Semiconductor C-106 Package Competitive C-106 Package

.315

____

.285

.105

____

.095

.054

____

.046

.420

____

.400

____

.360

.385

____

.365

.135

____

.115

.520

____

.480

.127

____

.123 DIA

.105

____

.095 .190

____

.170

.026

____

.019

.025

____

.035

.295

____

.305

.148

____

.158

.115

____

.130

.015

____

.025

.050

____

.095

.145

____

.155

5 TYP

.425

____

.435

.575

____

.655

.020

____

.026

123

.045

____

.055

.095

____

.105

.040

.094 BSC

PACKAGE INTERCHANGEABILITY

C106 Series

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PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

STYLE 2:

PIN 1. CATHODE

2. ANODE

3. GATE

−B−

−A− M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 −−− 1.02 −−−

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C106/D

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