Order this document by BD165/D SEMICONDUCTOR TECHNICAL DATA 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 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REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 10 IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) TJ = 150C 25 20 15 10 5 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) 5.0 100 s 3.0 2.0 1.0 ms 5.0 ms 1.0 SECOND BREAKDOWN dc LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C PULSE CURVES APPLY BELOW BD165 RATED VCEO BD169 0.5 0.3 0.2 0.1 5.0 160 7.0 10 20 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. PD - TC Derating Curve 100 Figure 2. Safe Operating Area (see Note 1) 1.2 1 IC = 0.1 A 0.8 0.25 A 0.5 A 1A 0.6 0.4 0.2 0 5 1 10 50 100 IB, BASE CURRENT (mA) 500 1000 Figure 3. Collector Saturation Region 1 0.5 TJ = + 150C + 25C - 25C VOLTAGE (VOLTS) hFE , DC CURRENT GAIN, NORMALIZED 10 1 VBE at VCE = 2 V 0.1 0.05 VCE(sat) at IC/IB = 10 VCE = 2 V 0.1 0.01 0.05 0.1 IC, COLLECTOR CURRENT (A) TJ = 25C 0.5 0.01 1 Figure 4. Current Gain Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 2 VBE(sat) at IC/IB = 10 10 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 Figure 5. "On" Voltage The data of Figure 2 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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