1MB10-120,1MB10D-120, Molded IGBT
1200V / 10A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=100°C IC100
1ms Tc=25°C Icp
Max. power dissipation(IGBT) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
1200
±20
16
10
48
135
+150
-40 to +150
50
Unit
V
V
A
A
A
W
°C
°C
N·cm
Equivalent Circuit Schematic
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector DC Tc=25°C IC25
current Tc=100°C IC100
1ms Tc=25°C Icp
Max. power dissipation (IGBT) PC
Max. power dissipation (FWD) PC
Operating temperature Tj
Storage temperature Tstg
Screw torque -
Rating
1200
±20
16
10
48
135
85
+150
-40 to +150
50
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
1MB10-120 / IGBT
1MB10D-120 / IGBT+FWD
C:Collector
E:Emitter
G:Gate
IGBT
C:Collector
E:Emitter
G:Gate
IGBT + FWD
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Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
– – 1.0
––20
5.5 – 8.5
– – 3.5
– 1200 –
– 250 –
–80–
– – 1.2
– – 0.6
– – 1.5
– – 0.5
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, I C=10mA
VGE=15V, IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=600V IC=10A
VGE=±15V
RG=160 ohm
(Half Bridge)
mA
µA
V
V
pF
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Thermal resistance – – 0.92
– – 1.47 IGBT
FWD °C/W
°C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
– – 1.0
––20
5.5 – 8.5
– – 3.5
– 1200 –
– 250 –
–80–
– – 1.2
– – 0.6
– – 1.5
– – 0.5
– – 3.0
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, I C=10mA
VGE=15V, IC=10A
VGE=0V
VCE=10V
f=1MHz
VCC=600V, IC=10A
VGE=±15V
RG=160 ohm
(Half Bridge)
IF=10A, VGE=0V
IF=10A, VGE=-10V, di/dt=100A/µs
mA
µA
V
V
pF
µs
V
µs
Symbol Characteristics Conditions Unit
Min. Typ. Max.
1MB10-120, 1MB10D-120 Molded IGBT
1MB10-120 / IGBT
1MB10D-120 / IGBT+FWD
Thermal resistance – – 0.92 IGBT °C/W
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
1MB10-120 / IGBT
1MB10D-120 / IGBT+FWD
Outline drawings, mm
1MB10-120, 1MB10D-120
TO-3P
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Characteristics
1MB10-120,1MB10D-120
1MB10-120, 1MB10D-120 Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=25°C Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Switching time vs. Collector current
Vcc=600V, RG=160 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current
Vcc=600V, RG=160 ohm, VGE=±15V, Tj=125°C
Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
Collector current : Ic [A]
0 1 2 3 4 5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
0 5 10 15 20
Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]
Switching time : ton, tr, toff, tf [n sec.]
100
Collector current : Ic [A] Collector current : Ic [A]
Switching time : ton, tr, toff, tf [n sec.]
0 5 10 15 20
20
15
10
5
0
10
8
6
4
2
0
1000
10
8
6
4
2
0
100
1000
0 1 2 3 4 5
0 5 10 15 20
20
15
10
5
0
0 5 10 15 20
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Collector-Emitter voltage : VCE [V]
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
0 5 10 15 20 25 30 35
100
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
Gate charge : Qg [nC]
100
1000
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
20
15
10
5
0 0 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0 20 40 60 80 100 120 140 160
25
20
15
10
5
0
1000
800
600
400
200
0
Switching time vs. RG
Vcc=600V, Ic=10A, VGE=±15V, Tj=125°C
Gate resistance : RG [ohm]
100
1000
100
Switching time : ton, tr, toff, tf [n sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 160 ohm
<<> Typical short circuit capability
Vcc=800V, RG=160 ohm, Tj=125°C
Short circuit time : tsc [µs]
1000
400
300
200
100
0 5 10 15 20 25
80
60
40
20
0
Short circuit time current : Isc [A]
Characteristics
1MB10-120,1MB10D-120
1MB10-120, 1MB10D-120
Gate voltage : VGE [V]
100
1
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IGBT Module
10-4 10-3 10-2 10-1 100
Pulse width : PW [sec.]
Thermal resistance : Rth (j-c) [°C/W]
Transient thermal resistance
Characteristics
1MB10-120,1MB10D-120
1MB10D-120
Reverse recovery time vs. Forward current
-di/dt=30A / µsec Reverse recovery current vs. Forward current
-di/dt=30A / µsec
reverse recovery time : trr [nsec]
reverse recovery current : Irr [A]
800
600
400
200
0
10
8
6
4
2
0
0 5 10 15
Forward current : IF [A] Forward current : IF [A]
0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 120
Forward voltage : VF [V]
Forward current : IF [A]
reverse recovery time : trr [nsec]
-di/dt [ A / µsec ]
Forward current vs. Foeward voltage Reverse recovery time characteristics vs. -di/dt
IF=10A, Tj=125°C 20
15
10
5
0
reverse recovery current : Irr [A]
100
10-1
10-2
101
20
15
10
5
0
800
600
400
200
0
1MB10-120, 1MB10D-120
0 5 10 15
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