HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45 A B C FEATURES: * PG = 16 dB min. at 50 W/30 MHz * IMD3 = -30 dBc max. at 50 W (PEP) * OmnigoldTM Metalization System E OC E B H I D J MAXIMUM RATINGS IC 12.0 A VCBO 36 V F E VCEO 18 V VEBO 3.5 V PDISS 183 W @ TC = 25 OC TJ O O O O -65 C to +200 C T STG -65 C to +150 C JC 1.05 OC/W CHARACTERISTICS SYMBOL G #8-32 UNC-2A DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10597 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 50 mA 36 V BV CES IC = 100 mA 36 V BV CEO IC = 50 mA 18 V BV EBO IE = 10 mA 3.5 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V GP VCE = 12.5 V C POUT = 50 W(PEP) IC = 5.0 A 10 f = 1.0 MHz PIN = 7 W f = 50 MHz 10 10 mA --- --- 300 pF dB 55 % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 1/1 Specifications are subject to change without notice.