A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 50 mA 36 V
BVCES IC = 100 mA 36 V
BVCEO IC = 50 mA 18 V
BVEBO IE = 10 mA 3.5 V
ICES VCE = 15 V 10 mA
hFE VCE = 5.0 V IC = 5.0 A 10 --- ---
COB VCB = 12.5 V f = 1.0 MHz 300 pF
GP
ηηC
VCE = 12.5 V PIN = 7 W f = 50 MHz
POUT = 50 W(PEP)
10 55
dB
%
NPN SILICON RF POWER TRANSISTOR
HF50-12S
DESCRIPTION:
The ASI HF50-12S is Designed for
FEATURES:
• PG = 16 dB min. at 50 W/30 MHz
•• IMD3 = -30 dBc max. at 50 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC12.0 A
VCBO 36 V
VCEO 18 V
VEBO 3.5 V
PDISS 183 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.05 OC/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10597
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H.090 / 2.29 .100 / 2.54
DIM
.220 / 5.59 .230 / 5.84
.490 / 12.45.450 / 11.43
I
J
.155 / 3.94 .175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E F
D
ØC
B
.112x45°
G
HJ
I
A
#8-32 UNC-2A
EE
C
B
