BPX 80
BPX 82 …89
NPN-Silizium-Fototransistor Zeilen
Silicon NPN Phototransistor Arrays
Lead (Pb) Free Product - RoHS Compliant
2011-05-27 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 450 nm bis 1100 nm
• Hohe Linearität
• Mehrstellige Zeilenbauform aus klarem Epoxy
Anwendungen
• Miniaturlichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
Fotostrom , Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Photocurrent
IPCE (mA)
BPX 82 Q62702P0021 > 0.32
BPX 83 Q62702P0025 > 0.32
BPX 84 Q62702P0030 > 0.32
BPX 85 Q62702P0031 > 0.32
BPX 86 Q62702P0022 > 0.32
BPX 87 Q62702P0032 > 0.32
BPX 88 Q62702P0033 > 0.32
BPX 89 Q62702P0026 > 0.32
BPX 80 Q62702P0028 > 0.32
Features
• Especially suitable for applications from
450 nm to 1100 nm
• High linearity
• Multiple-digit array package of transparent
epoxy
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
2011-05-27 2
BPX 80, BPX 82 …89
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 …+ 80 °C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE 35 V
Kollektorstrom
Collector current
IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
ICS 200 mA
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 90 mW
Wärmewiderstand
Thermal resistance
RthJA 750 K/W
BPX 80, BPX 82 …89
2011-05-27 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max 850 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ450 …1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A0.11 mm2
Abmessung der Chipfläche
Dimensions of chip area
L × B
L × W
0.5 ×0.5 mm × mm
Halbwinkel
Half angle
ϕ±18 Grad
deg.
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
CCE 7.5 pF
Dunkelstrom
Dark current
VCE = 20 V, E = 0
ICEO 1 (≤50) nA
2011-05-27 4
BPX 80, BPX 82 …89
Die gelieferten Bauelemente sind mit -A, -B, -C gekennzeichnet. Wegen Ausbeuteschwankungen ist jedoch die
Bestellung einer definierten Gruppe -A, -B, -C nicht möglich.
For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a definite group.
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit Buchstaben
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
alphabetic characters.
Bezeichnung
Parameter
Symbol
Symbol
Werte
Value
Einheit
Unit
-A -B -C
Fotostrom
Photocurrent
Ee= 0.5 mW/cm2, λ = 950 nm, VCE = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.32…0.63
1.5
0.40…0.80
1.9
≥ 0.50
2.3
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf5.5 6 8 μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee= 0.5 mW/cm2, λ = 950 nm
VCEsat 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
BPX 80, BPX 82 …89
2011-05-27 5
Relative Spectral Sensitivity
Srel = f (λ)
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
Directional Characteristics
Srel = f (ϕ)
400
0nm
%
OHF04048
20
40
60
80
100
λ
rel
S
10
30
50
70
500 600 700 800 900 1100
Photocurrent
IPCE = f (Ee), VCE = 5 V
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
0
pF
OHF04051
CE
C
CE
V
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
1
2
3
4
5
6
7
8
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (VCE), E = 0
Dark Current
ICEO = f (TA), VCE = 20 V, E = 0
OHF04049
V
CE
0
10
101
10-1
10-2
CEO
I
nA
0V510 15 20 25 30 35
nA
OHF04050
CEO
I
A
T
-2
10
-1
10
10
0
1
10
10
2
3
10
10
4
-25 0 25 50 75 100˚C
2011-05-27 6
BPX 80, BPX 82 …89
Maßzeichnung
Package Outlines
Maße in mm / Dimensions in mm.
.
Transistoren pro Zeile
Number of Transistors per Array
Maß „B“
Dimension “B”
2 4.5 ... 4.9
3 7.0 ... 7.4
4 9.6 ... 10.0
5 12.1 ... 12.5
6 14.6 ... 16.0
7 17.2 ... 17.6
8 19.7 ... 20.1
9 22.3 ... 22.7
10 24.8 ... 25.2
BPX 80, BPX 82 …89
2011-05-27 7
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
