© 2008 IXYS CORPORATION, All rights reserved DS99076A(05/08)
VDSS = 500V
ID25 = 50A
RDS(on) ≤≤
≤≤
≤ 85mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
IXFR66N50Q2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 33A, Note 1 85 mΩ
HiPerFETTM
Power MOSFET
Q2-Class
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C50A
IDM TC= 25°C, pulse width limited by TJM 264 A
IATC= 25°C66A
EAS TC= 25°C4J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 20 V/ns
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120/4.5..27 N/lb.
Weight 5g
Features
• Double metal process for low gate
resistance
• International standard package
• Epoxy meet UL 94 V-0, flammability
classification
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
G = Gate D = Drain
S = Source
Isolated Tab
ISOPLUS247 (IXFR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR66N50Q2
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 33A, Note 1 30 44 S
Ciss 9125 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1200 pF
Crss 318 pF
td(on) 32 ns
trResistive Switching Times 16 ns
td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 33A 60 ns
tfRG= 1Ω (External) 10 ns
Qg(on) 200 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 33A 47 nC
Qgd 98 nC
RthJC 0.25 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 66 A
ISM Repetitive, pulse width limited by TJM 264 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1 μC
IRM 10 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ISOPLUS247 (IXFR) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFR66N50Q2
Fig. 6. Drain Curr ent vs. Case
Temperature
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 2. Ex te nded Output Characte ri stics
@ 25
°
C
0
20
40
60
80
100
120
140
160
02468101214161820
VD S - V o l ts
I D - Amperes
7V
VGS
= 10V
8V
5V
6V
Fig. 3. Output Cha racte ri stics
@ 125
°
C
0
10
20
30
40
50
60
70
02468101214
VD S - Vol ts
I D - Am p eres
VGS
= 10V
7V
6V
3.5V
4.5V
5V
Fig. 1. Output Cha ra cte ristics
@ 25
°
C
0
10
20
30
40
50
60
70
01234567
VD S - Vol ts
I D - Am p eres
VGS
= 10V
8V
7V 6V
4.5V
5V
5.5V
Fig. 4. RDS(on
)
Normalized to 0.5 ID25
V
alue
vs. Junction Tem pe rature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
TJ
- Degrees Cent i grade
R D S ( o n ) - N ormalized
I D
= 66A
I D
= 33
A
VGS
= 10V
Fi g. 5. RDS(on) Normaliz e d to 0.5 ID25 Va lue
vs. ID
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160
I D - Amperes
R D S ( o n ) - Normalized
TJ
= 125
°
C
TJ
= 25
°
C
VGS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR66N50Q2
Fig. 11. Ca paci tance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- V ol ts
C apacitance - picoFarads
C
iss
C
oss
C
rss
f
= 1MH
z
Fig. 10. Ga te Cha rge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- nanoCoulom bs
V
G S
- Vo lts
VDS
= 250
V
ID
= 33A
IG
= 10mA
Fig . 7. I nput Admi tta nce
0
10
20
30
40
50
60
70
80
90
100
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
G S
- V o l ts
I
D
- Amperes
TJ = 125
°
C
25
°
C
- 40
°
C
Fig. 8. Tra nsconducta nce
0
10
20
30
40
50
60
70
80
90
0 20 40 60 80 100 120 140
I
D
- A m peres
g
f s
- Siemens
TJ = - 40
°
C
25
°
C
125
°
C
Fig . 9. Source Curre nt vs.
Source -To-Dra i n Vol ta ge
0
20
40
60
80
100
120
140
160
180
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
S D
- V o l ts
I
S
- Amperes
TJ
= 125
°
C
TJ
= 25
°
C
Fig. 12. Maxi m um Tra nsi e nt The rm al
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
P ulse Wi dt h - S econds
Z
( t h ) J C
-
º
C / W
IXYS REF: F_66N50Q2 (94) 05-28-08-C
