© Semiconductor Components Industries, LLC, 1995
May, 2019 − Rev. 6
1Publication Order Number:
MMBF0201NLT1/D
MMBF0201NL,
MVMBF0201NL
MOSFET – N-Channel,
SOT-23
300 mA, 20 V
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
•Low RDS(on) Provides Higher Efficiency and Extends Battery Life
•Miniature SOT−23 Surface Mount Package Saves Board Space
•MVMBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 20 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1
2
Device Package Shipping†
ORDERING INFORMATION
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
AND PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
300 mAMPS − 20 VOLTS
RDS(on) = 1 W
www.onsemi.com
N1 = Specific Device Code
M = Date Code*
G= Pb−Free Package
N1 M G
G
MMBF0201NLT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MVMBF0201NLT1G* SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBF0201NL, MVMBF0201NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
V(BR)DSS 20 − − Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0) IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th) 1.0 1.7 2.4 Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
−
−
0.75
1.0
1.0
1.4
W
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gFS −450 −mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 5.0 V) Ciss −45 −pF
Output Capacitance (VDS = 5.0 V) Coss −25 −
Transfer Capacitance (VDG = 5.0 V) Crss −5.0 −
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
td(on) −2.5 −ns
Rise Time tr−2.5 −
Turn−Off Delay Time td(off) −15 −
Fall Time tf−0.8 −
Gate Charge (See Figure 5) QT−1400 −pC
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current IS− − 0.3 A
Pulsed Current ISM − − 0.75
Forward Voltage (Note 2) VSD −0.85 −V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
MMBF0201NL, MVMBF0201NL
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
ON-RESISTANCE (OHMS)
01 234 6
0
0.6
0.8
1.0
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
0 0.3 0.6 0.9 1.2 1.4
0
0.6
0.8
1.0
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
0 0.2 0.4 1
0
0.3
0.9
1.2
1.5
0 5 10 20
0
1.0
1.5
2.0
2.4
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance versus
Gate−to−Source Voltage
0
10
12
14
16
-25 25 100 150
0.60
1.10
Qg, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
TEMPERATURE (°C)
Figure 6. Threshold Voltage Variance
Over Temperature
5
0.4 0.4
0.6
0.6 0.8 15
0 160 450 2000
0.2
125°C
25°C-55°C0.2
VGS = 5 V
VGS = 4 V
VGS = 3 V
VGS = 4.5 V
VGS = 10 V
0.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
2
4
6
8
3400
VDS = 16 V
ID = 300 mA
VGS(th) , NORMALIZED
ID = 250 mA
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0 50 75 125
VGS = 10, 9, 8, 7, 6 V
MMBF0201NL, MVMBF0201NL
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
SOURCE CURRENT (AMPS)
-50 -25 0 25 50 150
0.6
1.4
1.6
1.8
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On−Resistance versus
Junction Temperature
0 5 10 15 20
0
60
80
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance
0 0.3 0.6 1.4
0.001
0.1
1.0
10
SOURCE-TO-DRAIN FORWARD VOLTAGE (VOLTS)
Figure 9. Source−to−Drain Forward Voltage
versus Continuous Current (IS)
75
1.2
40
0.01
0.9 1.2
1.0
20
RDS(on), NORMALIZED (OHMS)
0.8
100 125
VGS = 10 V @ 300 mA
VGS = 4.5 V @ 100 mA
C, CAPACITANCE (pF)
Ciss
Coss
Crss
125°C 25°C -55°C
MMBF0201NL, MVMBF0201NL
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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