
3/14
STP12NM50FD / STP12NM50FDFP / STB12NM50FD / STB12NM50FD-1 / STW14NM50FD
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=1mA,V
GS = 0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS = Max Rating
VDS = Max Rating, TC= 125 °C1
10 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±30V ±100 nA
VGS(th) Gate Threshold Voltage VDS =V
GS,I
D= 250µA345V
R
DS(on) Static Drain-source On
Resistance VGS = 10V, ID= 6A 0.32 0.4 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS =15V
,I
D= 6 A 9.8 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 1027
205
24
pF
pF
pF
RGGate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3.7 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Delay Time
Rise Time VDD = 250 V, ID=6A
R
G= 4.7ΩVGS =10V
(Resistive Load see, Figure 3)
19
10 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID=12A,
V
GS = 10V 27.5
8
12
38.5 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400 V,ID=12A,
R
G=4.7Ω, VGS = 10V
(Inductive Load see, Figure 5)
39
18
29
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM (2) Source-drain Current
Source-drain Current (pulsed) 12
48 A
A
VSD (1) Forward On Voltage ISD =12A,VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs
VDD = 30V, Tj= 150°C
(see test circuit, Figure 5)
224
1.3
12
ns
µC
A