CompactFlashTM Memory Card Product Manual (R) CORPORATE HEADQUARTERS 140 Caspian Court Sunnyvale, CA 94089 408-542-0500 FAX: 408-542-0503 URL: http://www.sandisk.com SanDisk Corporation general policy does not recommend the use of its products in life support applications where in a failure or malfunction of the product may directly threaten life or injury. Per SanDisk Terms and Conditions of Sale, the user of SanDisk products in life support applications assumes all risk of such use and indemnifies SanDisk against all damages. The information in this manual is subject to change without notice. SanDisk Corporation shall not be liable for technical or editorial errors or omissions contained herein; nor for incidental or consequential damages resulting from the furnishing, performance, or use of this material. All parts of the SanDisk CompactFlash Memory Card documentation are protected by copyright law and all rights are reserved. This documentation may not, in whole or in part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine readable form without prior consent, in writing, from SanDisk Corporation. SanDisk and the SanDisk logo are registered trademarks of SanDisk Corporation. ImageMate, CompactFlash and CF are trademarks of SanDisk Corporation. Product names mentioned herein are for identification purposes only and may be trademarks and/or registered trademarks of their respective companies. (c) 1999 SanDisk Corporation. All rights reserved. The SanDisk CompactFlash Memory Card is covered or licensed under one or more of the following U.S. Patent Nos. 5,070,032; 5,095,344; 5,168,465; 5,172,338; 5,198,380; 5,200,959; 5,268,318; 5,268,870; 5,272,669; 5,418,752; 5,602,987. Other U.S. and foreign patents awarded and pending. Lit. No. 20-10-00038 Rev. 5 5/99 Printed in U.S.A. Revision History Revisions before Rev. 5Ninitial release and general changes. Revision 5Ngeneral editorial changes, CF Type II information added, new higher capacities products added, some lower capacities removed, new card reader/writer vendor added. 2 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table of Contents 1.0 Introduction to the CompactFlash Memory Card....................................................7 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Scope ............................................................................................................................... 8 Product Models................................................................................................................. 8 System Features...............................................................................................................8 PCMCIA Standard...........................................................................................................9 CompactFlash Specification ............................................................................................ 9 Related Documentation .................................................................................................... 9 CompactFlash Memory Cards Compared to the SanDisk FlashDisk Products.....................9 1.7.1 System Power Requirements................................................................................ 10 1.7.2 Card Information Structure (CIS)........................................................................ 10 1.7.3 Capacity Specifications ..................................................................................... 11 1.7.4 Voltage Sense Signal -VS1 ................................................................................. 11 1.7.5 True IDE Mode ................................................................................................... 12 1.7.6 Identify Drive Information................................................................................. 12 Functional Description ................................................................................................... 12 1.8.1 Flash Technology Independence.......................................................................... 12 1.8.2 Defect and Error Management............................................................................. 12 1.8.3 Endurance ......................................................................................................... 13 1.8.4 Wear Leveling................................................................................................... 13 1.8.5 Using the Erase Sector and Write without Erase Commands................................. 13 1.8.5.1 Interaction with Systems not Aware of the Erase Sector and Write without Erase Commands .......................................................... 13 1.8.5.2 Limitations and Issues......................................................................... 14 1.8.6 Automatic Sleep Mode ....................................................................................... 14 1.8.7 Dynamic Adjustment of Performance versus Power Consumption ........................... 14 1.8.8 Power Supply Requirements................................................................................ 14 2.0 Product Specifications................................................................................ 15 2.1 2.2 2.3 2.4 2.5 2.6 System Environmental Specifications ............................................................................. 15 System Power Requirements............................................................................................ 15 System Performance ....................................................................................................... 16 System Reliability and Maintenance .............................................................................. 16 Physical Specifications.................................................................................................. 17 Capacity Specifications................................................................................................. 21 3.0 Installation ............................................................................................. 22 3.1 Mounting........................................................................................................................ 22 4.0 CompactFlash Memory Card Interface Description............................................... 23 4.1 4.2 4.3 Physical Description...................................................................................................... 23 4.1.1 Pin Assignments and Pin Type............................................................................. 23 Electrical Description .................................................................................................... 23 Electrical Specification.................................................................................................. 30 4.3.1 Input Leakage Current ........................................................................................ 30 4.3.2 Input Characteristics ......................................................................................... 30 4.3.3 Output Drive Type............................................................................................. 31 4.3.4 Output Drive Characteristics ............................................................................. 31 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 3 CompactFlash Memory Card Product Manual Table of Contents 4.4 4.5 4.6 4.7 (continued) 4.3.5 Interface/Bus Timing.......................................................................................... 32 4.3.6 Attribute Memory Read Timing Specification ..................................................... 32 4.3.7 Attribute Memory Write Timing Specification .................................................... 33 4.3.8 Common Memory Read Timing Specification....................................................... 34 4.3.9 Common Memory Write Timing Specification...................................................... 35 4.3.10 I/O Input (Read) Timing Specification................................................................ 36 4.3.11 I/O Output (Write) Timing Specification............................................................ 37 4.3.12 True IDE Mode I/O Input (Read) Timing Specification......................................... 38 4.3.13 True IDE Mode I/O Output (Write) Timing Specification..................................... 39 Card Configuration ........................................................................................................ 40 4.4.1 Attribute Memory Function ................................................................................. 41 4.4.2 Configuration Option Register (Address 200h in Attribute Memory)..................... 42 4.4.3 Card Configuration and Status Register (Address 202h in Attribute Memory) ....... 42 4.4.4 Pin Replacement Register (Address 204h in Attribute Memory)............................ 43 4.4.5 Socket and Copy Register (Address 206h in Attribute Memory) ............................ 44 I/O Transfer Function ..................................................................................................... 45 4.5.1 I/O Function....................................................................................................... 45 Common Memory Transfer Function ................................................................................. 46 4.6.1 Common Memory Function................................................................................... 46 True IDE Mode I/O Transfer Function .............................................................................. 47 4.7.1 True IDE Mode I/O Function................................................................................ 47 5.0 ATA Drive Register Set Definition and Protocol .................................................. 48 5.1 5.2 5.3 5.4 5.5 I/O Primary and Secondary Address Configurations ........................................................ 49 Contiguous I/O Mapped Addressing ................................................................................ 50 Memory Mapped Addressing .......................................................................................... 51 True IDE Mode Addressing.............................................................................................. 52 ATA Registers................................................................................................................ 53 5.5.1 Data Register (Address - 1F0[170]; Offset 0,8,9)................................................... 53 5.5.2 Error Register (Address - 1F1[171]; Offset 1, 0Dh Read Only)............................... 54 5.5.3 Feature Register (Address - 1F1[171]; Offset 1, 0Dh Write Only).......................... 54 5.5.4 Sector Count Register (Address - 1F2[172]; Offset 2) ............................................. 54 5.5.5 Sector Number (LBA 7-0) Register (Address - 1F3[173]; Offset 3).......................... 54 5.5.6 Cylinder Low (LBA 15-8) Register (Address - 1F4[174]; Offset 4) ......................... 54 5.5.7 Cylinder High (LBA 23-16) Register (Address - 1F5[175]; Offset 5)...................... 54 5.5.8 Drive/Head (LBA 27-24) Register (Address 1F6[176]; Offset 6)............................ 55 5.5.9 Status & Alternate Status Registers (Address 1F7[177]&3F6[376]; Offsets 7 & Eh) 56 5.5.10 Device Control Register (Address - 3F6[376]; Offset Eh)....................................... 56 5.5.11 Card (Drive) Address Register (Address 3F7[377]; Offset Fh) .............................. 57 6.0 ATA Command Description ......................................................................... 58 6.1 4 ATA Command Set ......................................................................................................... 58 6.1.1 Check Power Mode - 98H, E5H............................................................................ 60 6.1.2 Execute Drive Diagnostic - 90H........................................................................... 60 6.1.3 Erase Sector(s) - C0H.......................................................................................... 61 6.1.4 Format Track - 50H ............................................................................................ 62 6.1.5 Identify Drive - ECH ......................................................................................... 62 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table of Contents 6.2 (continued) 6.1.5.1 General Configuration ......................................................................... 64 6.1.5.2 Default Number of Cylinders.............................................................. 64 6.1.5.3 Default Number of Heads.................................................................... 64 6.1.5.4 Number of Unformatted Bytes per Track .............................................. 64 6.1.5.5 Number of Unformatted Bytes per Sector.............................................. 64 6.1.5.6 Default Number of Sectors per Track .................................................... 64 6.1.5.7 Number of Sectors per Card.................................................................. 64 6.1.5.8 Memory Card Serial Number............................................................... 64 6.1.5.9 Buffer Type......................................................................................... 64 6.1.5.10 Buffer Size.......................................................................................... 64 6.1.5.11 ECC Count........................................................................................... 64 6.1.5.12 Firmware Revision.............................................................................. 64 6.1.5.13 Model Number .................................................................................... 64 6.1.5.14 Read/Write Multiple Sector Count ...................................................... 65 6.1.5.15 Double Word Support.......................................................................... 65 6.1.5.16 Capabilities ....................................................................................... 65 6.1.5.17 PIO Data Transfer Cycle Timing Mode................................................. 65 6.1.5.18 DMA Data Transfer Cycle Timing Mode............................................... 65 6.1.5.19 Translation Parameters Valid ............................................................. 65 6.1.5.20 Current Number of Cylinders, Heads, Sectors/Track ............................. 65 6.1.5.21 Current Capacity ................................................................................ 65 6.1.5.22 Multiple Sector Setting ....................................................................... 65 6.1.5.23 Total Sectors Addressable in LBA Mode............................................... 65 6.1.6 Idle - 97H, E3H .................................................................................................. 66 6.1.7 Idle Immediate - 95H, E1H................................................................................. 66 6.1.8 Initialize Drive Parameters - 91H ...................................................................... 67 6.1.9 Read Buffer - E4H.............................................................................................. 67 6.1.10 Read Multiple - C4H.......................................................................................... 68 6.1.11 Read Long Sector - 22H, 23H ............................................................................... 69 6.1.12 Read Sector(s) - 20H, 21H................................................................................... 69 6.1.13 Read Verify Sector(s) - 40H, 41H........................................................................ 70 6.1.14 Recalibrate - 1XH .............................................................................................. 70 6.1.15 Request Sense - 03H ............................................................................................ 71 6.1.16 Seek - 7XH......................................................................................................... 72 6.1.17 Set Features - EFH ............................................................................................. 72 6.1.18 Set Multiple Mode - C6H.................................................................................... 74 6.1.19 Set Sleep Mode- 99H, E6H.................................................................................. 74 6.1.20 Standby - 96H, E2H............................................................................................ 75 6.1.21 Standby Immediate - 94H, E0H .......................................................................... 75 6.1.22 Translate Sector - 87H........................................................................................ 76 6.1.23 Wear Level - F5H .............................................................................................. 77 6.1.24 Write Buffer - E8H............................................................................................. 77 6.1.25 Write Long Sector - 32H, 33H.............................................................................. 78 6.1.26 Write Multiple Command - C5H......................................................................... 78 6.1.27 Write Multiple without Erase - CDH ................................................................. 79 6.1.28 Write Sector(s) - 30H, 31H ................................................................................. 80 6.1.29 Write Sector(s) without Erase - 38H ................................................................... 81 6.1.30 Write Verify Sector(s) - 3CH.............................................................................. 82 Error Posting .................................................................................................................. 83 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 5 CompactFlash Memory Card Product Manual Table of Contents (continued) 7.0 CIS Description ....................................................................................... 85 Ordering Information and Technical Support............................................................101 Ordering Information .............................................................................................................103 CompactFlash Memory Card .........................................................................................103 SanDisk ImageMate CompactFlash Drive.................................................................103 CompactFlash Memory Card Evaluation Kit .................................................................103 System Software, Card Reader/Writers and Connectors Compatible with the SanDisk CompactFlash Memory Cards ........................................104 Technical Support Services.....................................................................................................108 Direct SanDisk Technical Support .................................................................................108 SanDisk Worldwide Web Site.......................................................................................108 SanDisk Sales Offices......................................................................................109 Appendix CompactFlash Connector Specifications....................................................113 Limited Warranty ...........................................................................................123 6 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 1.0 Introduction to the CompactFlash Memory Card The SanDisk CompactFlash Memory Card (CF) products provide high capacity solid state flash memory that electrically complies with t h e Personal Computer Memory Card International Association ATA (PC Card ATA) standard. (In Japan, the applicable standards group is JEIDA.) The CompactFlash Memory Card Series also supports a True IDE Mode that is electrically compatible with an IDE disk drive. CompactFlash Memory Cards provide up to 160 million bytes (Megabytes, MBytes or MB) of formatted storage capacity in the CF Type II form factor and 96 megabytes in the original CF form factor. The original CF form factor card can be used in any system that has a CF slot, and with a Type II PCMCIA adapter can be used in any system that has a PCMCIA Type II or Type III socket. The newer CF Type II card fits into a CF Type II slot. CompactFlash Memory Cards include an on-card intelligent controller that provides a high level interface to the host computer. This interface allows a host computer to issue commands to t h e memory card to read or write blocks of memory. A block of memory consists of 512 bytes of data and is protected by a powerful Error Correcting Code (ECC). The CompactFlash Memory Card on-card intelligent controller manages interface protocols, data storage and retrieval as well as ECC, defect handling and diagnostics, power management and clock control. Once the CompactFlash Memory Card has been configured by the host, it appears to the host as a standard ATA (IDE) disk drive. Additional ATA commands have been provided to enhance system performance. SanDisk has expanded the available capacity of the CompactFlash Storage Card by offering a new CF Type II form factor. Just slightly thicker than the original CF form factor, the CF Type II form factor is 5 mm thick instead of 3.3 mm thick. The host system can support as many cards as there are CompactFlash, CompactFlash Type I I and PCMCIA Type II or III card slots. The original form factor CompactFlash Memory Cards require a PCMCIA Type II Adapter to be used in a PCMCIA Type II or Type III socket. The CompactFlash Memory Card Series SanDisk Flash memory chips which designed by SanDisk specifically for use in storage applications. In addition to the storage specific Flash memory chips, SanDisk also offers an industrial version of t h e CompactFlash Memory Card Series, which has a broader operating and non-operating temperature range than the standard product. Please see Section 2 for detailed specifications. uses were mass mass the Data In/O ut Host Interface SanDisk Single Chip Controller Control SanDisk Flash Modules SanDisk CompactFlash Figure 1-1 CompactFlash Memory Card Block Diagram SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 7 CompactFlash Memory Card Product Manual 1.1 Scope 1.2 This document describes the key features and specifications of CompactFlash Memory Cards, as well as the information required to interface this product to a host system. Product Models The CompactFlash Memory Card Series is available in a variety of capacities as shown in the following table. The CompactFlash Memory Card is also available with Windows and DOS compatible compression software preloaded. A l l models are shipped formatted with a DOS 5.0 file structure. Standard Model Industrial Model Capacity (formatted) SDCFB-4 SDCFBI-4 4.0 MB SDCFB-8 SDCFBI-8 8.0 MB SDCFB-10 SDCFBI-10 10.4 MB SDCFB-15 SDCFBI-15 15.0 MB SDCFB-16* SDCFBI-16* 16.0 MB SDCFB-20 SDCFB-20 20.0 MB SDCFB-30 SDCFBI-30 30.0 MB SDCFB-32* SDCFBI-32* 32.1 MB SDCFB-40 SDCFBI-40 40.1 MB SDCFB-48 SDCFBI-48 48.1 MB SDCFB-64* SDCFBI-64* 64.2 MB SDCFB-80* SDCFBI-80* 80.2 MB SDCFB-96* SDCFBI-96* 96.2 MB SDCF2B-160* SDCFBI-160* 160.4 MB (CF Type II) *Preliminary information based on 128 Mbit technology. 1.3 System Features The industryOs smallest form factor Low Profile Up to 160 MBytes of mass storage data (in CF Type II form factor) +5 Volts or +3.3 Volts operation PC Card ATA protocol compatible True IDE Mode compatible and retry Very low CMOS power Supports power down commands and sleep modes Very high performance Non-volatile storage (no battery required) Programmable power versus performance MTBF >1,000,000 hours Very rugged Minimum 10,000 insertions Low weight Standard (SDCFB and SDCF2B Series) and Industrial versions (SDCF2BI and SDCFBI Series) Noiseless 8 Automatic error correction capabilities SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 1.4 PCMCIA Standard 1.6 CompactFlash Memory Cards are fully electrically compatible with the PCMCIA specifications listed below. These specifications may be obtained from: 1) American National Standard X3.221 AT Attachment for Interface for Disk Drives Document PCMCIA 2635 North First St., Ste. 209 San Jose, CA 95131 USA Phone: 408-433-2273 FAX: 408-433-9558 1) PCMCIA PC Card Standard, January 1995 2) PCMCIA PC Card ATA Specification, January 1995 1.5 CompactFlash Specification CompactFlash Memory Cards are fully compatible with the CompactFlash Specification published by the CompactFlash Association. Contact the CompactFlash Association for more information. Related Documentation This document can be ordered from Global Engineering Documents by calling 1-800-854-7179. 1.7 CompactFlash Memory Cards Compared to the SanDisk FlashDisk Products The CompactFlash Memory Card Series, when used with a PCMCIA Type II adapter, is compatible with SanDiskOs FlashDisk products. Differences between the CompactFlash Memory Card and the FlashDisk that could be noticed by previous FlashDisk users are explained in t h e following sections. CompactFlash Association P.O. Box 51537 Palo Alto, CA 94303 USA Phone: 415-843-1220 FAX: 415-493-1871 www.compactflash.org SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 9 CompactFlash Memory Card Product Manual 1.7.1 System Power Requirements The system power requirements for t h e CompactFlash Memory Card are different from those of the SDP5A FlashDisk. The two tables below show the SDP5A FlashDisk and t h e CompactFlash Memory Card power requirements. SDCFB-XX and SDCF2B-XX (Standard Version) 3.3V 5% DC Input Voltage (VCC) 100 mV max. ripple (p-p) +5 V Currents (maximum Average value) See Notes 1 to 3. Sleep: 200 A (Slow - Fast) Reading: 32 mA - 45 mA Writing: 32 mA - 60 mA Read/Write Peak 150 mA/50s SDCFBI-XX and SDCF2BI-XX (Industrial Version) 5V 10% 3.3V 5% 5 V 5% 500 A (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50s 200 A (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50s 500 A (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50s Note 1. All values quoted are typical at ambient temperature and nominal supply voltage unless otherwise stated. Note 2. Sleep mode currently is specified under the condition that all card inputs are static CMOS levels and in a "Not Busy" operating state. Note 3. The currents specified show the bounds of programmability of the product. Model SDP5A Standard FlashDisk Industrial FlashDisk DC Input Voltage (VPP) (Note 4) Not Used Not Used DC Input Voltage (VCC) 100 mv max. ripple (p-p) 5 V 10% 5 V 5% +5 V Currents (maximum average value) See Notes 1 to 5 Sleep: 1 mA (Slow - Fast) Reading: 36 mA - 100 mA Writing: 36 mA - 125 mA 1 mA (Slow - Fast) 36 mA - 100 mA 36 mA - 125 mA Type III Reading: 36 mA - 125 mA Writing: 36 mA - 150 mA 36 mA - 125 mA 36 mA - 150 mA Note 1. Sleep mode current is specified under the condition that all FlashDisk inputs are at static CMOS levels and in a "Not Busy" operating state. Note 2. The currents specified show the complete range of programmability in the PC Card ATA FlashDisk. A tradeoff between performance and maximum current used can be done using the Set Features command. The FlashDisk defaults to the fastest speed and highest current. See the Set Features command for more details. Note 3. For information on peak currents during power on, hot insertion and writing, please contact SanDisk Technical Support at (408) 542-0400. Note 4. The Vpp pins are not connected in this product. Note 5. At maximum performance, typical average Read current is 70 mA and typical average write current is 100 mA. 1.7.2 Card Information Structure (CIS) The Card Information Structure (CIS) of t h e CompactFlash Memory Card is different from t h e SDP5A FlashDisk CIS. The CompactFlash Memory Card CIS indicates support for twin card 10 and 3.3 volt operation which are not supported in the SDP5A FlashDisk. Both the SDP5A FlashDisk and the CompactFlash Memory Card support 5 volt operation. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 1.7.3 Capacity Specifications The capacity specifications for the SDP5A FlashDisk are different from the capacity specifications of the CompactFlash Memory Card. The tables below show the capacity specifications of the SDP5A FlashDisk and the CompactFlash Memory Card. Note: SanDisk defines a megabyte as one million bytes. Model Number Capacity (formatted) Sectors/Card (Max LBA+1) No. of Heads No. of Sectors/ Track No. of Cylinders SDP5A-5 5,242,880 bytes 10,240 2 32 160 SDP5A-10 10,485,760 bytes 20,480 2 32 320 SDP5A-20 20,971,520 bytes 40,960 2 32 640 SDP5A-40 41,943,040 bytes 81,920 4 32 640 SDP5A-110 110,100,480 bytes 215,040 8 32 840 SDP5A-175 175,374,336 bytes 342,528 12 32 892 Model Number Capacity (formatted) Sectors/Card (Max LBA+1) No. of Heads No. of Sectors/ Track No. of Cylinders SDCFB-4 4,030,464 bytes 7,872 2 32 123 SDCFB-8 8,028,160 bytes 15,680 2 32 245 SDCFB-10 10,485,760 bytes 20,480 2 32 320 SDCFB-15 15,007,744 bytes 29,312 2 32 458 SDCFB-16* 16,056,320 bytes 31,360 2 32 490 SDCFB-20 20,054,016 bytes 39,168 2 32 612 SDCFB-30 30,081,024 bytes 58,752 6 32 306 SDCFB-32* 32,112,640 bytes 62,720 4 32 490 SDCFB-40 40,108,032 bytes 78,336 4 32 612 SDCFB-48 48,103,424 bytes 93,952 4 32 734 SDCFB-64* 64,225,280 bytes 125,440 8 32 490 SDCFB-80* 80,216,064 bytes 156,672 8 32 612 SDCFB-96* 96,206,848 bytes 187,904 8 32 734 12 32 816 SDCF2B-160* 160,432,128 bytes 313,344 *Preliminary information based on 128 Mbit technology. 1.7.4 Voltage Sense Signal -VS1 The Voltage Sense Signal -VS1, pin 43, of t h e CompactFlash Memory Card is grounded because the Card Information Structure (CIS) can be read at 3.3 volts. In the earlier SDP5A FlashDisk, this pin is not grounded because the SDP5A FlashDisk CIS can only be read at 5 volts. Note: In some early platforms, the -VS1 pin (pin 43) is also the Refresh pin for DRAM cards. Plugging the CompactFlash Memory Card into a platform supporting the Refresh pin will hang the bus. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 11 CompactFlash Memory Card Product Manual 1.7.5 True IDE Mode 1.8.1 The CompactFlash Memory Card differs from t h e SDP5A FlashDisk in that it can be configured in True IDE Mode. See section 4.6 True IDE Mode I/O Transfer Function. 1.7.6 Identify Drive Information Word 51 of the Identify Drive Command information has a default value of 0000H for t h e SDP5A FlashDisk. The data field type information for this word is OPIO data transfer cycle timing mode 0.O For the CompactFlash Memory Card, word 51 of the Identify Drive Command information has a default value of 0001H. The data field type information for this word is OPIO data transfer cycle timing mode 1.O 1.8 Flash Technology Independence The 512 byte sector size of CompactFlash Memory Card is the same as that in an IDE magnetic disk drive. To write or read a sector (or multiple sectors), the host computer software simply issues a Read or Write command to the CompactFlash Memory Card. This command contains the address and the number of sectors to write/read. The host software then waits for the command to complete. The host software does not get involved in t h e details of how the flash memory is erased, programmed or read. This is extremely important as flash devices are expected to get more and more complex in the future. Since the CompactFlash Memory Card Series uses an intelligent on-board controller, the host system software will not require changing as new flash memory evolves. In other words, systems that support t h e CompactFlash Memory Card today will be able to access future SanDisk cards built with new flash technology without having to update or change host software. Functional Description CompactFlash Memory Cards contain a high level, intelligent subsystem as shown in the block diagram, Figure 1-1. This intelligent (microprocessor) subsystem provides many capabilities not found in other types of memory cards. These capabilities include: 1. Standard ATA register and command set (same as found on most magnetic disk drives). 2. Host independence from details of erasing and programming flash memory. 3. Sophisticated system for managing defects (analogous to systems found in magnetic disk drives). 4. Sophisticated system for error recovery including a powerful error correction code (ECC). 5. Power management operation. for low power 1.8.2 Defect and Error Management CompactFlash Memory Cards contain a sophisticated defect and error management system. This system is analogous to the systems found in magnetic disk drives and in many cases offers enhancements. For instance, disk drives do not typically perform a read after write to confirm the data is written correctly because of t h e performance penalty that would be incurred. CompactFlash Memory Cards do a read after write under margin conditions to verify that t h e data is written correctly (except in the case of a Write without Erase Command). In the rare case that a bit is found to be defective, CompactFlash Memory Cards replace this bad bit with a spare bit within the sector header. If necessary, CompactFlash Memory Cards will even replace the entire sector with a spare sector. This is completely transparent to the host and does not consume any user data space. The CompactFlash Memory Card soft error rate specification is much better than the magnetic disk drive specification. In the extremely rare case a read error does occur, CompactFlash Memory Cards have innovative algorithms to 12 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual recover the data. This is similar to using retries on a disk drive but is much more sophisticated. The last line of defense is to employ a powerful ECC to correct the data. If ECC is used to recover data, defective bits are replaced with spare bits to ensure they do not cause any future problems. These defect and error management systems coupled with the solid state construction give CompactFlash Memory Cards unparalleled reliability. 1.8.3 Endurance CompactFlash Memory Cards have an endurance specification for each sector of 300,000 writes (reading a logical sector is unlimited). This is far beyond what is needed in nearly all applications of CompactFlash Memory Cards. Even very heavy use of CompactFlash Card in digital cameras, cellular phones, PDAs, personal communicators, pagers, voice recorders, ruggedized handheld computers, palmtop and notebook computers will use only a fraction of the total endurance over t h e typical computerOs five year lifetime. For instance, it would take over 34 years to wear out an area on the CompactFlash Card on which a file of any size (from 512 bytes to capacity) was rewritten 3 times per hour, 8 hours a day, 365 days per year. With typical applications (PIM software, word processing, spreadsheets, etc.), the endurance limit is not of any practical concern to the vast majority of users. 1.8.4 Wear Leveling CompactFlash Memory Card Series products do not require or perform a Wear Level operation. The command is supported as a NOP operation to maintain backward compatibility with existing software utilities. 1.8.5 Using the Erase Sector and Write without Erase Commands The Erase Sector and Write without Erase commands provide the capability to substantially increase the write performance of t h e CompactFlash Memory Card. Once a sector has been erased using the Erase Sector command, a write to that sector will be much faster. This is because a normal write operation includes a separate sector erase prior to write. An example of where these commands may be useful is in a digital camera. The camera user may have plenty of time to erase pictures but may wish to take several pictures in rapid succession. To accomplish this, the host system (i.e., camera) would use the Erase Sectors command to pre-erase the sectors that will store the pictures. When t h e pictures are taken, the camera can store them in the previously erased sectors much faster than in non-erased sectors. 1.8.5.1 Interaction with Systems not Aware of the Erase Sector and Write without Erase Commands Many systems that can read and write CompactFlash Memory Cards may not be aware of the Erase Sector and Write without Erase Commands. These systems would not issue these commands but such a system might attempt a normal write or a normal read to a pre-erased sector. A normal write to a pre-erased sector will function correctly, but will be at the normal write speed that is slower than a Write without Erase command. If a normal read is attempted to a Opre-erasedO sector, CompactFlash Memory Cards will detect it is pre-erased and will return zero data and will not report an error even though the data ECC is not valid. If an Oun-awareO host system over-writes a preerased sector with a normal write and then t h e CompactFlash Memory Card is moved to t h e system that created the erased sectors, a situation exists where a Write without Erase might be SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 13 CompactFlash Memory Card Product Manual attempted to a OnormalO sector. If this occurs, t h e CompactFlash Card will perform a normal write which means it will first erase the sector and then do a full write with all margin modes enabled. This write will of course be slower than if t h e sector were in fact pre-erased. 1.8.5.2 Limitations and Issues The advantage of the Write without Erase and Erase Sector commands is that they shift the bulk of the erase and write time to the Erase Sector command. The Erase Sector command performs most of the normal tasks needed. To increase t h e speed of the Write without Erase command, t h e final margin verify done in a normal write command is skipped for the first 16K writes. When the cycle count (hot count) of a sector exceeds 16K, the system controller automatically reverts to a full write, including the final margin verify. Since the erase is not required in this case, a write to a pre-erased sector with a hot count of over 16K is still faster than to a sector that has not been pre-erased. The Translate Sector command can be used to determine the Ohot countO of a sector. When the host is ready to access t h e CompactFlash Memory Card and it is in sleep mode, any command issued to the CompactFlash Card will cause it to exit sleep and respond. The host does not have to follow the ATA protocol of issuing a reset first. It may do this if desired, but it is not needed. By not issuing the reset, performance is improved through the reduction of overhead but this must be done only for t h e SanDisk products as other ATA products may not support this feature. 1.8.7 A very unique and valuable feature of t h e CompactFlash Memory Card is the ability of t h e host to control the power the card consumes. This allows CompactFlash Cards to work across a broad cross section of platforms without compromising performance. For instance, it can operate in a platform that provides only 32 mA a t 3.3 volts average current (of course at reduced performance) or in a platform that provides 90 mA at full performance. Please see the Set Features command for details. 1.8.8 1.8.6 Power Supply Requirements Automatic Sleep Mode A unique feature of the SanDisk CompactFlash Memory Card (and other SanDisk products) is automatic entrance and exit from sleep mode. Upon completion of a command, the CompactFlash Card will enter the sleep mode to conserve power if no further commands are received within 5 msec. The host does not have to take any action for this to occur. In most systems, the CompactFlash Memory Card is in sleep mode except when the host is accessing it, thus conserving power. Note that the delay from command completion to entering sleep mode can be adjusted. 14 Dynamic Adjustment of Performance versus Power Consumption This is a dual voltage product which means i t will operate at a voltage range of 3.30 volts 5% or 5.00 volts 10% ( 5% for industrial versions). Per the PCMCIA specification section 2.1.1, t h e host system must apply 0 volts in order to change a voltage range. This same procedure of providing 0 volts to the card is required if the host system applies an input voltage outside the desired voltage by more than 20%. This means less than 4.0 volts for the 5.00 volt range and less than 2.70 volts for the 3.30 volt range. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 2.0 Product Specifications For all the following specifications, values are defined at ambient temperature and nominal supply voltage unless otherwise stated. 2.1 System Environmental Specifications Standard Product (SDCFB and SDCF2B) Industrial Product (SDCFBI and SDCF2BI) Temperature Operating: 0 C to 60 C Non-Operating: -25 C to 85 C -40 C to 85 C -50 C to 100 C Humidity Operating: 8% to 95%, non-condensing Non-Operating: 8% to 95%, non-condensing 8% to 95%, non-condensing 8% to 95%, non-condensing Acoustic Noise: 0 dB 0 dB Vibration Operating: 15 G peak to peak max. Non-Operating: 15 G peak to peak max. 15 G peak to peak max. 15 G peak to peak max. Shock Operating: 2,000 G max. Non-Operating: 2,000 G max. 2,000 G max. 2,000 G max. Altitude (relative to sea level) Operating: 80,000 feet max. Non-Operating: 80,000 feet max. 80,000 feet max. 80,000 feet max. 2.2 System Power Requirements Standard Product (SDCFB and SDCF2B) DC Input Voltage (VCC) 100 mV max. ripple (p-p) +5 V Currents (maximum Average value) See Notes 1 to 3. 3.3V 5% Sleep: 200 A (Slow - Fast) Reading: 32 mA - 45 mA Writing: 32 mA - 60 mA Read/Write Peak 150 mA/50s Industrial Product (SDCFBI and SDCF2BI) 5V 10% 3.3V 5% 5V 5% 500 A (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50s 200 A (Slow - Fast) 32 mA - 45 mA 32 mA - 60 mA 150 mA/50s 500 A (Slow - Fast) 46 mA - 75 mA 46 mA - 90 mA 150 mA/50s Note 1. All values quoted are typical at ambient temperature and nominal supply voltage unless otherwise stated. Note 2. Sleep mode currently is specified under the condition that all card inputs are statis CMOS levels and in a "Not Busy" operating state. Note 3. The currents specified show the bounds of programmability of the product. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 15 CompactFlash Memory Card Product Manual 2.3 System Performance All performance timings assume the CompactFlash Memory Card Series controller is in the default (i.e., fastest) mode. Start Up Times Sleep to write: 2.5 msec maximum Sleep to read: 2.0 msec maximum Reset to ready: 50 msec typical 400 msec maximum Active to Sleep Delay Programmable Data Transfer Rate To/From Flash 4.0 MBytes/sec burst Data Transfer Rate To/From Host 6.0 MBytes/sec burst Controller Overhead Command to DRQ 1.25 msec maximum Note: The Sleep to Write and Sleep to Read times are the times it takes the CompactFlash Memory Card to exit sleep mode when any command is issued by the host to when the card is reading or writing. CompactFlash Memory Cards do not require a reset to exit sleep mode. See section 1.8.6. 2.4 System Reliability and Maintenance MTBF (@ 25C) >1,000,000 hours Preventive Maintenance None Data Reliability <1 non-recoverable error in 1014 bits read Endurance SDCFB-XX 300,000 erase / program cycles per logical sector guaranteed Endurance SDCFBI-XX Industrial Product 100,000 erase / program cycles per logical sector guaranteed 16 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 2.5 Physical Specifications Refer to the following table and to Figures 2-1 and 2-2 for CompactFlash Memory Card physical specifications and dimensions. CompactFlash CompactFlash Type II Weight: 11.4 g (.40 oz) typical 14.2 g (.50 oz) maximum 13.5 g (.47 oz) typical Length: 36.40 0.15 mm (1.433 .006 in) 36.4 0.15 mm (1.433 .006 in.) Width: 42.80 0.10 mm (1.685 .004 in) 42.80 0.10 mm (1.685 .004 in.) Thickness: 3.3 mm 0.10 mm (.130 .004 in) (Excluding Lip) .039.002 [1.00] 25 .040.003 [1.00] 2X .118.003 [3.00] P TO .096.003 [2.4] [36.40] 1 .040.003 [1.00] 2X 1.015.003 [25.78] [12.00] .130.004 [3.30] 2X .472.004 50 26 1.433.006 .063.002 [1.60] 5.0 mm maximum (.1968 in. maximum) .030.003 [0.8] 1.640.005 [41.66] 4X R.020.004 [0.5] 1.685.004 [42.80] .025.003 [0.6] Figure 2-1 CompactFlash Memory Card Dimensions SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 17 CompactFlash Memory Card Product Manual 1.60mm .05 (.063 in. .002) 1.01mm .07 (.039 in. .003) 1.01mm .007 (.039 in. .003) 26 Bottom 25 1 3.3mm .10 (.130 in. .004) Top B A 2X 26.97mm .07 4.5mm .07 Ground Contact Area (optional) .99mm .05 (.039 in. .002) 50 2X 25.78mm .07 (2X 1.015 in. .003) 8.5mm max. BO Detail A 1mm min. Detail B (2 X) 6.16mm Centered Finger Grip 10.00mm min. 1.65mm M 0.5mm .076 0.6mm .076 Note 1: Area between dotted line and connector face may have reduced height. Height in this region is 5.0mm maximum and 3.2mm minimum. O TT 0.6mm .076 36.40mm .15 (1.433 in. .006) 42.80mm .101 (1.685 in. .004) C AAA A AAA AAAA AAA AAA Section C-C (Finger Grip) 3.3mm 4X R 0.5mm .1 (4X .020 in. .004) C 3.3mm 5mm max. P TO 1.65mm AA (See Note 1) 1mm min. Figure 2-2 CompactFlash Type II Memory Card Dimensions 18 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Refer to the following table and to Figure 2-3 for CompactFlash Memory Card PC Card Adapter physical specifications and dimensions. CF Adapter CF Type II Adapter Weight: 33 g (1.16 oz) typical 26.6 g (.93 oz) maximum Length: 85.6 0.20 mm (3.370 .008 in) 85.6 0.20 mm (3.370 .008 in) Width: 54.0 0.10 mm (2.126 .004 in) 54.0 0.10 mm (2.126 .004 in) Thickness: 5.0 mm Max (0.1968 in) 5.0 mm Max (0.1968 in) 0.196 [5.0] 0.130 [3.3] 2.126 [54.0] 3.370 [85.6] 1.196 [30.4] .866 [22.0] 1.536 [39.03] .472 [12.0] .078 [2.0] 1.694 [43.03] 0.138 [3.5] Figure 2-3 CompactFlash Memory Card Adapter Dimensions SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 19 CompactFlash Memory Card Product Manual Figure 2-4 CompactFlash Type II Memory Card Adapter Dimensions 20 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 2.6 Capacity Specifications The table below shows the specific capacity for the various models and the default number of heads, sectors/track and cylinders. Model Number Capacity (formatted) Sectors/Card (Max LBA+1) No. of Heads No. of Sectors/ Track No. of Cylinders SDCFB-4 4,030,464 bytes 7,872 2 32 123 SDCFB-8 8,028,160 bytes 15,680 2 32 245 SDCFB-10 10,485,760 bytes 20,480 2 32 320 SDCFB-15 15,007,744 bytes 29,312 2 32 458 SDCFB-16* 16,056,320 bytes 31,360 2 32 490 SDCFB-20 20,054,016 bytes 39,168 2 32 612 SDCFB-30 30,081,024 bytes 58,752 6 32 306 SDCFB-32* 32,112,640 bytes 62,720 4 32 490 SDCFB-40 40,108,032 bytes 78,336 4 32 612 SDCFB-48 48,103,424 bytes 93,952 4 32 734 SDCFB-64* 64,225,280 bytes 125,440 8 32 490 SDCFB-80* 80,216,064 bytes 156,672 8 32 612 SDCFB-96* 96,206,848 bytes 187,904 8 32 734 12 32 816 SDCF2B-160* 160,432,128 bytes 313,344 *Preliminary information based on 128 Mbit technology. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 21 CompactFlash Memory Card Product Manual 3.0 Installation 3.1 Mounting The CompactFlash Memory Card may be installed in any platform with a 50 position Surface Mount Interface Header (3M P/N N7E507516VY-20) and Ejector (3M P/N D7E50-7316-02), or equivalent, properly installed. Refer to t h e appendix at the end of this manual for additional technical information. 22 In addition, the CompactFlash Memory Card may be used in any standard PCMCIA Type II (5 mm) or Type III (10.5 mm) socket as supplied by an OEM using a Type II PCMCIA adapter. The CompactFlash Type II Memory Card fits into a CF Type II slot. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.0 CompactFlash Memory Card Interface Description 4.1 Physical Description The host is connected to the CompactFlash Memory Card using a standard 50 pin connector consisting of two rows of 25 female contacts each on 50 mil (1.27 mm) centers. 4.1.1 Pin Assignments and Pin Type The signal/pin assignments are listed in Table 4-1. Low active signals have a O-O prefix. Pin types are Input, Output or Input/Output. Table 4-2 defines the DC characteristics for all input and output type structures. 4.2 Electrical Description The CompactFlash Memory Card Series is optimized for operation with hosts which support the PCMCIA I/O interface standard conforming to the PC Card ATA specification. However, t h e CompactFlash Card may also be configured to operate in systems that support only the memory interface standard. The configuration of t h e CompactFlash Card will be controlled using t h e standard PCMCIA configuration registers starting at address 200h in the Attribute Memory space of the CompactFlash Memory Card. Table 4-2 describes the I/O signals. Signals whose source is the host are designated as inputs while signals that the CompactFlash Memory Card sources are outputs. The CompactFlash Card logic levels conform to those specified in the PCMCIA Release 2.1 specification. Refer to section 4.3 for definitions of Input and Output type. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 23 CompactFlash Memory Card Product Manual Table 4-1 Pin Assignments and Pin Type PC Card Memory Mode Pin Num Signal Name 1 GND 2 D03 3 Pin Num Signal Name Ground 1 GND I/O I1Z,OZ3 2 D03 D04 I/O I1Z,OZ3 3 4 D05 I/O I1Z,OZ3 5 D06 I/O 6 D07 7 -CE1 In, Out Type Pin Type True IDE Mode In, Out Type 4 Signal Name Ground 1 GND I/O I1Z,OZ3 2 D03 I/O I1Z,OZ3 D04 I/O I1Z,OZ3 3 D04 I/O I1Z,OZ3 4 D05 I/O I1Z,OZ3 4 D05 I/O I1Z,OZ3 I1Z,OZ3 5 D06 I/O I1Z,OZ3 5 D06 I/O I1Z,OZ3 I/O I1Z,OZ3 6 D07 I/O I1Z,OZ3 6 D07 I/O I1Z,OZ3 I I3U 7 -CE1 I I3U 7 -CS0 I I3Z 2 I I1Z A10 I I1Z 8 A10 I I1Z 8 A10 9 -OE I I3U 9 -OE I I3U 9 -ATA SEL 11 A09 A08 12 A07 13 VCC 14 15 16 I I I A06 I A05 I A04 I I1Z I1Z 10 11 A09 A08 I1Z 12 A07 Power 13 VCC I1Z I1Z I1Z 14 15 16 I I I A06 I A05 I A04 I I1Z I1Z 10 11 Pin Type In, Out4 Type Pin Num 8 10 Ground I I3U A09 2 I I1Z A08 2 I I1Z 2 I I1Z I1Z 12 A07 Power 13 VCC 14 A06 2 I I1Z A05 2 I I1Z A04 2 I I1Z 2 I I1Z I1Z I1Z I1Z 15 16 Power 17 A03 I I1Z 17 A03 I I1Z 17 A03 18 A02 I I1Z 18 A02 I I1Z 18 A02 I I1Z 19 A01 I I1Z 19 A01 I I1Z 19 A01 I I1Z 20 A00 I I1Z 20 A00 I I1Z 20 A00 I I1Z 21 D00 I/O I1Z,OZ3 21 D00 I/O I1Z,OZ3 21 D00 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 22 D01 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 23 D02 I/O I1Z,OZ3 24 WP O OT3 24 -IOIS16 O OT3 24 -IOCS16 O ON3 25 -CD2 O Ground 25 -CD2 O Ground 25 -CD2 O Ground 26 -CD1 O Ground 26 -CD1 O Ground 26 -CD1 O Ground 27 1 27 1 27 1 I/O I1Z,OZ3 1 I/O I1Z,OZ3 1 I/O I1Z,OZ3 1 I/O I1Z,OZ3 1 I/O I1Z,OZ3 28 29 30 31 24 Pin Type PC Card I/O Mode 4 D11 1 D12 1 D13 1 D14 1 D15 1 I/O I/O I/O I/O I/O I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 28 29 30 31 D11 1 D12 1 D13 1 D14 1 D15 1 I/O I/O I/O I/O I/O I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 I1Z,OZ3 28 29 30 31 D11 D12 D13 D14 D15 1 32 -CE2 I I3U 32 -CE2 I I3U 32 -CS1 I I3Z 33 -VS1 O Ground 33 -VS1 O Ground 33 -VS1 O Ground 34 -IORD I I3U 34 -IORD I I3U 34 -IORD I I3Z SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 4-1 Pin Assignments and Pin Type (continued) PC Card Memory Mode PC Card I/O Mode Pin Num Signal Name Pin Type In, Out4 Type Pin Num Signal Name 35 -IOWR I I3U 35 -IOWR I 36 -WE I I3U 36 -WE 37 RDY/BSY O OT1 37 IREQ 38 VCC Power 38 VCC 39 -CSEL I I2Z 39 -CSEL 40 -VS2 O OPEN 40 41 RESET I I2Z 42 -WAIT O 43 -INPACK 44 True IDE Mode Pin In, Out4 Type Type Pin In, Out4 Type Type Pin Num Signal Name I3U 35 -IOWR I I3Z I I3U 36 -WE3 I I3U O OT1 37 INTRQ O OZ1 Power 38 VCC I I2Z 39 -CSEL I I2U -VS2 O OPEN 40 -VS2 O OPEN 41 RESET I I2Z 41 -RESET I I2Z OT1 42 -WAIT O OT1 42 IORDY O ON1 O OT1 43 -INPACK O OT1 43 -INPACK O OZ1 -REG I I3U 44 -REG I I3U 44 -REG3 I I3U 45 BVD2 I/O I1U,OT1 45 -SPKR I/O I1U,OT1 45 -DASP I/O I1U,ON1 46 BVD1 I/O I1U,OT1 46 -STSCHG I/O I1U,OT1 46 -PDIAG 47 1 D08 I/O I1Z,OZ3 48 D091 I/O I1Z,OZ3 49 1 D10 50 GND Note: I/O I/O I1U,ON1 47 1 D08 I/O I1Z,OZ3 48 D091 I/O I1Z,OZ3 I1Z,OZ3 49 1 D10 I/O I1Z,OZ3 Ground 50 GND 47 1 D08 I/O I1Z,OZ3 48 D091 I/O I1Z,OZ3 I1Z,OZ3 49 1 D10 Ground 50 GND I/O Power Ground 1. These signals are required only for 16 bit access and not required when installed in 8-bit systems. For lowest power dissipation, leave these signals open. 2. Should be grounded by the host. 3. Should be tied to VCC by the host. 4. Please refer to section 4.3 for definitions of In, Out type. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 25 CompactFlash Memory Card Product Manual Table 4-2 Signal Description Signal Name Dir. A10 - A0 (PC Card Memory Mode) I Pin 8, 10, 11, 12, These address lines along with the -REG signal are used to 14, 15, 16, 17, select the following: The I/O port address registers within the 18, 19, 20 CompactFlash Card, the memory mapped port address registers within the card, a byte in the card's information structure and its configuration control and status registers. A10 - A0 (PC Card I/O Mode) A2 - A0 (True IDE Mode) This signal is the same as the PC Card Memory Mode signal. I 18, 19, 20 A10 - A3 (True IDE Mode) BVD1 (PC Card Memory Mode) Description In True IDE Mode only A[2:0] are used to select the one of eight registers in the Task File. In True IDE Mode, these remaining address lines should be grounded by the host. I/O 46 This signal is asserted high as the BVD1 signal since a battery is not used with this product. -STSCHG (PC Card I/O Mode) Status Changed This signal is asserted low to alert the host to changes in the RDY/-BSY and Write Protect states, while the I/O interface is configured. Its use is controlled by the Card Config and Status Register. -PDIAG (True IDE Mode) In the True IDE Mode, this input / output is the Pass Diagnostic signal in the Master / Slave handshake protocol. BVD2 (PC Card Memory Mode) I/O 45 This output line is always driven to a high state in Memory Mode since a battery is not required for this product. -SPKR (PC Card I/O Mode) This output line is always driven to a high state in I/O Mode since this product does not support the audio function. -DASP (True IDE Mode) In the True IDE Mode, this input/output is the Disk Active/Slave Present signal in the Master/Slave handshake protocol. -CD1, -CD2 (PC Card Memory Mode) O 26, 25 These Card Detect pins are connected to ground on the CompactFlash Card. They are used by the host to determine if the card is fully inserted into its socket. -CD1, -CD2 (PC Card I/O Mode) This signal is the same for all modes. -CD1, -CD2 (True IDE Mode) This signal is the same for all modes. -CE1, -CE2 (PC Card Memory Mode) Card Enable I 7, 32 These input signals are used both to select the card and to indicate to the card whether a byte or a word operation is being performed. -CE2 always accesses the odd byte of the word. -CE1 accesses the even byte or the Odd byte of the word depending on A0 and -CE2. A multi-plexing scheme based on A0, -CE1, -CE2 allows 8 bit hosts to access all data on D0-D7. See Tables 4-11, 4-12, 4-15, and 4-16. -CE1, -CE2 (PC Card I/O Mode) Card Enable This signal is the same as the PC Card Memory Mode signal. -CS0, -CS1 (True IDE Mode) In the True IDE Mode -CS0 is the chip select for the task file registers while -CS1 is used to select the Alternate Status Register and the Device Control Register. 26 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 4-2 Signal Description (continued) Signal Name -CSEL (PC Card Memory Mode) Dir. Pin I 39 Description This signal is not used for this mode. -CSEL (PC Card I/O Mode) This signal is not used for this mode. -CSEL (True IDE Mode) This internally pulled up signal is used to configure this device as a Master or a Slave when configured in the True IDE Mode. When this pin is grounded, this device is configured as a Master. When the pin is open, this device is configured as a Slave. D15 - D00 (PC Card Memory Mode) I/O 31, 30, 29, 28, 27, 49, 48, 47, 6, 5, 4, 3, 2, 23, 22, 21 These lines carry the Data, Commands and Status information between the host and the controller. D00 is the LSB of the Even Byte of the Word. D08 is the LSB of the Odd Byte of the Word. D15 - D00 (PC Card I/O Mode) This signal is the same as the PC Card Memory Mode signal. D15 - D00 (True IDE Mode) In True IDE Mode, all Task File operations occur in byte mode on the low order bus D00-D07 while all data transfers are 16 bit using D00-D15. GND (PC Card Memory Mode) -- 1, 50 Ground. GND (PC Card I/O Mode) This signal is the same for all modes. GND (True IDE Mode) This signal is the same for all modes. -INPACK ( PC Card Memory Mode) O 43 This signal is not used in this mode. -INPACK ( PC Card I/O Mode) Input Acknowledge The Input Acknowledge signal is asserted by the CompactFlash Card when the card is selected and responding to an I/O read cycle at the address that is on the address bus. This signal is used by the host to control the enable of any input data buffers between the card and the CPU. -INPACK (True IDE Mode) In True IDE Mode this output signal is not used and should not be connected at the host. -IORD (PC Card Memory Mode) I 34 This signal is not used in this mode. -IORD (PC Card I/O Mode) This is an I/O Read strobe generated by the host. This signal gates I/O data onto the bus from the CompactFlash Card when the card is configured to use the I/O interface. -IORD (True IDE Mode) In True IDE Mode, this signal has the same function as in PC Card I/O Mode. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 27 CompactFlash Memory Card Product Manual Table 4-2 Signal Description (continued) Signal Name -IOWR (PC Card Memory Mode) Dir. Pin I 35 -IOWR (PC Card I/O Mode) Description This signal is not used in this mode. The I/O Write strobe pulse is used to clock I/O data on the Card Data bus into the CompactFlash controller registers when the card is configured to use the I/O interface. The clocking will occur on the negative to positive edge of the signal (trailing edge). -IOWR (True IDE Mode) -OE (PC Card Memory Mode) In True IDE Mode, this signal has the same function as in PC Card I/O Mode. I 9 This is an Output Enable strobe generated by the host interface. It is used to read data from the CompactFlash Card in Memory Mode and to read the CIS and configuration registers. -OE (PC Card I/O Mode) In PC Card I/O Mode, this signal is used to read the CIS and configuration registers. -ATA SEL (True IDE Mode) To enable True IDE Mode this input should be grounded by the host. RDY/-BSY (PC Card Memory Mode) O 37 In Memory Mode this signal is set high when the CompactFlash Card is ready to accept a new data transfer operation and held low when the card is busy. The Host memory card socket must provide a pull-up resistor. At power up and at Reset, the RDY/-BSY signal is held low (busy) until the CompactFlash Card has completed its power up or reset function. No access of any type should be made to the CompactFlash Card during this time. The RDY/-BSY signal is held high (disabled from being busy) whenever the following condition is true: The CompactFlash Card has been powered up with +RESET continuously disconnected or asserted. -IREQ ( PC Card I/O Mode) I/O Operation - After the CompactFlash Card has been configured for I/O operation, this signal is used as -Interrupt Request. This line is strobed low to generate a pulse mode interrupt or held low for a level mode interrupt. INTRQ (True IDE Mode) In True IDE Mode signal is the active high Interrupt Request to the host. -REG (PC Card Memory Mode) Attribute Memory Select I 44 This signal is used during Memory Cycles to distinguish between Common Memory and Register (Attribute) Memory accesses. High for Common Memory, Low for Attribute Memory. -REG (PC Card I/O Mode) The signal must also be active (low) during I/O Cycles when the I/O address is on the Bus. -REG (True IDE Mode) In True IDE Mode this input signal is not used and should be connected to VCC by the host. 28 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 4-2 Signal Description (continued) Signal Name RESET (PC Card Memory Mode) Dir. Pin I 41 Description When the pin is high, this signal resets the CompactFlash Card. The card is Reset only at power up if this pin is left high or open from power-up. The card is also reset when the Soft Reset bit in the Card Configuration Option Register is set. RESET (PC Card I/O Mode) This signal is the same as the PC Card Memory Mode signal. -RESET (True IDE Mode) In the True IDE Mode this input pin is the active low hardware reset from the host. VCC (PC Card Memory Mode) -- 13, 38 +5 V, +3.3 V power. VCC (PC Card I/O Mode) This signal is the same for all modes. VCC (True IDE Mode) This signal is the same for all modes. -VS1 -VS2 (PC Card Memory Mode) O 33 40 Voltage Sense Signals. -VS1 is grounded so that the CompactFlash Card CIS can be read at 3.3 volts and -VS2 is open and reserved by PCMCIA for a secondary voltage. -VS1 -VS2 (PC Card I/O Mode) This signal is the same for all modes. -VS1 -VS2 (True IDE Mode) This signal is the same for all modes. -WAIT (PC Card Memory Mode) O 42 The -WAIT signal is driven low by the CompactFlash Card to signal the host to delay completion of a memory or I/O cycle that is in progress. -WAIT (PC Card I/O Mode) This signal is the same as the PC Card Memory Mode signal. IORDY (True IDE Mode) In True IDE Mode this output signal may be used as IORDY. -WE (PC Card Memory Mode) I 36 This is a signal driven by the host and used for strobing memory write data to the registers of the CompactFlash Card when the card is configured in the memory interface mode. It is also used for writing the configuration registers. -WE (PC Card I/O Mode) In PC Card I/O Mode, this signal is used for writing the configuration registers. -WE (True IDE Mode) In True IDE Mode this input signal is not used and should be connected to VCC by the host. WP (PC Card Memory Mode) Write Protect O 24 Memory Mode - The CompactFlash Card does not have a write protect switch. This signal is held low after the completion of the reset initialization sequence. -IOIS16 ( PC Card I/O Mode) I/O Operation - When the CompactFlash Card is configured for I/O Operation, Pin 24 is used for the -I/O Selected is 16 Bit Port (-IOIS16) function. A Low signal indicates that a 16 bit or odd byte only operation can be performed at the addressed port. -IOCS16 (True IDE Mode) In True IDE Mode this output signal is asserted low when this device is expecting a word data transfer cycle. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 29 CompactFlash Memory Card Product Manual 4.3 Electrical Specification The following table defines all D.C. Characteristics for the CompactFlash Memory Card Series. Absolute Maximum conditions are: Vcc = -0.3V min. to 7.0V max. V* = -0.5V min. to Vcc + 0.5V max. Unless otherwise stated, conditions are: SDCFB-XX SDCFBI-XX Vcc = 5V 10% Vcc = 5V 5% Vcc = 3.3V 5% Vcc = 3.3V 5% Ta = 0C to 60C * Voltage on any pin except Vcc with respect to GND. Ta = -40C to 85C 4.3.1 Input Leakage Current Note: In the table below, x refers to the characteristics described in section 4.3.2. For example, I1U indicates a pull up resistor with a type 1 input characteristic. Type Parameter Symbol Conditions MIN IxZ Input Leakage Current IL Vih = Vcc / Vil = Gnd IxU Pull Up Resistor RPU1 IxD Pull Down Resistor RPD1 Note: 4.3.2 Type MAX Units -1 1 A Vcc = 5.0V 50k 500k Ohm Vcc = 5.0V 50k 500k Ohm The minimum pullup resistor leakage current meets the PCMCIA specification of 10k ohms but is intentionally higher in the CompactFlash Memory Card Series product to reduce power use. Input Characteristics Parameter Symbol MIN TYP MAX VCC = 3.3 V 1 2 3 30 TYP Input Voltage CMOS Vih Vil 2.4 Input Voltage CMOS Vih Vil 1.5 Input Voltage CMOS Schmitt Trigger Vth Vtl MIN TYP MAX VCC = 5.0 V 2.4 Volts 0.6 0.8 2.0 Volts 0.6 1.8 1.0 Units 0.8 2.8 2.0 Volts SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.3.3 Output Drive Type Note: In the table below, x refers to the characteristics described in section 4.3.4. For example, OT3 refers to Totempole output with a type 3 output drive characteristic. Type Output Type Valid Conditions OTx Totempole Ioh & Iol OZx Tri-State N-P Channel Ioh & Iol OPx P-Channel Only Ioh Only ONx N-Channel Only Iol Only 4.3.4 Output Drive Characteristics Type Parameter Symbol Conditions MIN 1 Output Voltage Voh Ioh = -4 mA Vcc -0.8V Vol Iol = 4 mA Voh Ioh = -8 mA Vol Iol = 8 mA Voh Ioh = -8 mA Vol Iol = 8 mA Ioz Vol = Gnd Voh = Vcc 2 3 X Output Voltage Output Voltage Tri-State Leakage Current SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION TYP MAX Units Volts Gnd +0.4V Vcc -0.8V Volts Gnd +0.4V Vcc -0.8V Volts Gnd +0.4V -10 10 A 31 CompactFlash Memory Card Product Manual 4.3.5 Interface/Bus Timing 4.3.6 There are two types of bus cycles and timing sequences that occur in the PCMCIA type interface, a direct mapped I/O transfer and a memory access. The two timing sequences are explained in detail in the PCMCIA PC Card Standard Release 2.1. The CompactFlash Memory Card conforms to the timing in that reference document. Attribute Memory Read Timing Specification The Attribute Memory access time is defined as 300 ns. Detailed timing specifications are shown in Table 4-3. Table 4-3 Attribute Memory Read Timing Speed Version 300 ns Item Symbol IEEE Symbol Min ns. Max ns. Read Cycle Time tc(R) tAVAV 300 Address Access Time ta(A) tAVQV 300 Card Enable Access Time ta(CE) tELQV 300 Output Enable Access Time ta(OE) tGLQV 150 Output Disable Time from CE tdis(CE) tEHQZ 100 Output Disable Time from OE tdis(OE) tGHQZ Address Setup Time tsu (A) tAVWL 30 Output Enable Time from CE ten(CE) tELQNZ 5 Output Enable Time from OE ten(OE) tGLQNZ 5 Data Valid from Address Change tv(A) tAXQX 0 100 tc(R) An ta(A) -REG tsu(A) tv(A) ta(CE) -CE tdis(CE) ten(CE) ta(OE) -OE tdis(OE) ten(OE) Dout Figure 4-1 Attribute Memory Read Timing Diagram Notes: 32 All times are in nanoseconds. Dout signifies data provided by the CompactFlash Memory Card to the system. The -CE signal or both the -OE signal and the -WE signal must be de-asserted between consecutive cycle operations. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.3.7 Attribute Memory Write Timing Specification The Card Configuration write access time is defined as 250 ns. Detailed timing specifications are shown in Table 4-4. Note: SanDisk does not allow writing from the Host to CIS Memory. Only writes to the Configuration register are allowed. Table 4-4 Attribute Memory Write Timing Speed Version Item 250 ns Symbol IEEE Symbol Min ns Write Cycle Time tc(W) tAVAV 250 Write Pulse Width tw(WE) tWLWH 150 Address Setup Time tsu(A) tAVWL 30 Write Recovery Time trec(WE) tWMAX 30 Data Setup Time for WE tsu(D-WEH) tDVWH 80 Data Hold Time th(D) tWMDX 30 Max ns tc(W) -Reg An tsu(A) -WE trec(WE) tw(WE) tsu(D-WEH) th(D) -CE -OE Din Data In Valid Figure 4-2 Attribute Memory Write Timing Diagram Notes: All times are in nanoseconds. Din signifies data provided by the system to the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 33 CompactFlash Memory Card Product Manual 4.3.8 Common Memory Read Timing Specification Table 4-5 Common Memory Read Timing Item Symbol IEEE Symbol Output Enable Access Time ta(OE) tGLQV 125 Output Disable Time from OE tdis(OE) tGHQZ 100 Address Setup Time tsu(A) tAVGL 30 Address Hold Time th(A) tGHAX 20 CE Setup before OE tsu(CE) tELGL 0 CE Hold following OE th(CE) tGHEH 20 Wait Delay Falling from OE tv(WT-OE) tGLWTV 35 Data Setup for Wait Release tv(WT) tQVWTH 0 Wait Width Time tw(WT) tWTLWTH 350 (Default Speed) Min ns. Max ns. An th(A) tsu(A) -REG tsu(CE) -CE th(CE) ta(OE) -OE tw(WT) -WAIT tv(WT-OE) tv(WT) tdis(OE) Dout Figure 4-3 Common Memory Read Timing Diagram Notes: 34 The maximum load on -WAIT is 1 LSTTL with 50pF total load. All times are in nanoseconds. Dout signifies data provided by the CompactFlash Memory Card to the system. The -WAIT signal may be ignored if the -OE cycle to cycle time is greater than the Wait Width time. The Max Wait Width time (in the slowest mode) can be determined from the Card Information Structure. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.3.9 Common Memory Write Timing Specification Table 4-6 Common Memory Write Timing Item Symbol IEEE Symbol Min ns. Data Setup before WE tsu(D-WEH) tDVWH 80 Data Hold following WE th(D) tlWMDX 30 WE Pulse Width tw(WE) tWLWH 150 Address Setup Time tsu(A) tAVWL 30 CE Setup before WE tsu(CE) tELWL 0 Write Recovery Time trec(WE) tWMAX 30 CE Hold following WE th(CE) tGHEH 20 Wait Delay Falling from WE tv(WT-WE) tWLWTV WE High from Wait Release tv(WT) tWTHWH Wait Width Time tw (WT) tWTLWTH (Default Speed) Max ns. 35 0 350 An tsu(A) trec(W E) -REG th(CE) tsu(CE) -C E tw (W E) -WE tw (W T) -WAIT tv (W T) tv (W T-W E) Din tsu(D-W EH) th(D) Din Valid Figure 4-4 Common Memory Write Timing Diagram Notes: The maximum load on -WAIT is 1 LSTTL with 50pF total load. All times are in nanoseconds. Din signifies data provided by the system to the CompactFlash Memory Card. The -WAIT signal may be ignored if the -WE cycle to cycle time is greater than the Wait Width time. The Max Wait Width time (in the slowest mode) can be determined from the Card Information Structure. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 35 CompactFlash Memory Card Product Manual 4.3.10 I/O Input (Read) Timing Specification Table 4-7 I/O Read Timing Item Symbol IEEE Symbol Min ns. Max ns. Data Delay after IORD td(IORD) tlGLQV Data Hold following IORD th(IORD) tlGHQX 0 IORD Width Time tw(IORD) tlGLIGH 165 Address Setup before IORD tsuA(IORD) tAVIGL 70 Address Hold following IORD thA(IORD) tlGHAX 20 CE Setup before IORD tsuCE(IORD) tELIGL 5 CE Hold following IORD thCE(IORD) tlGHEH 20 REG Setup before IORD tsuREG(IORD) tRGLIGL 5 REG Hold following IORD thREG(IORD) tlGHRGH 0 INPACK Delay Falling from IORD tdfINPACK(IORD) tlGLIAL 0 INPACK Delay Rising from IORD tdrINPACK(IORD) tlGHIAH 45 IOIS16 Delay Falling from Address tdfIOIS16(ADR) tAVISL 35 IOIS16 Delay Rising from Address tdrIOIS16(ADR) tAVISH 35 Wait Delay Falling from IORD tdWT(IORD) tlGLWTL 35 Data Delay from Wait Rising td(WT) tWTHQV 0 Wait Width Time tw(WT) tWTLWTH 350 (Default Speed) 100 45 An thA(IO RD) tsuA(IO RD) tsuREG(IO RD) -REG thREG(IO RD) tsuCE(IO RD) -C E thCE(IO RD) tw (IO RD) -IORD tdrINPACK(IO RD) tdfINPACK(IO RD) -INPAC K tdrIO IS16(ADR) td(IO RD) -IOIS16 tdfIO IS16(ADR) -WAIT td(W T) tdW T(IO RD) Dout th(IO RD) tw W T Figure 4-5 I/O Read Timing Diagram Notes: 36 The maximum load on -WAIT, -INPACK and -IOIS16 is 1 LSTTL with 50pF total load. All times are in nanoseconds. Minimum time from -WAIT high to -IORD high is 0 nsec, but minimum -IORD width must still be met. Dout signifies data provided by the CompactFlash Memory Card to the system. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.3.11 I/O Output (Write) Timing Specification Table 4-8 I/O Write Timing Item Symbol IEEE Symbol Min ns. Max ns. Data Setup before IOWR tsu(IOWR) tDVIWH 60 Data Hold following IOWR th(IOWR) tlWHDX 30 IOWR Width Time twIOWR tlWLIWH 165 Address Setup before IOWR tsuA(IOWR) tAVIWL 70 Address Hold following IOWR thA(IOWR) tlWHAX 20 CE Setup before IOWR tsuCE(IOWR) tELIWL 5 CE Hold following IOWR thCE(IOWR) tlWHEH 20 REG Setup before IOWR tsuREG(IOWR) tRGLIWL 5 REG Hold following IOWR thREG(IOWR) tlWHRGH 0 IOIS16 Delay Falling from Address tdfIOIS16(ADR) tAVISL 35 IOIS16 Delay Rising from Address tdrIOIS16(ADR) tAVISH 35 Wait Delay Falling from IOWR tdWT(IOWR) tlWLWTL 35 IOWR high from Wait high tdrIOWR(WT) tWTJIWH Wait Width Time (Default Speed) (Set Feature Speed <68 mA.) tw(WT) tWTLWTH 0 350 700 An thA(IO W R) tsuA(IO W R) tsuREG(IO W R) -REG thREG(IO W R) tsuCE(IO W R) -C E thCE(IO W R) tw (IO W R) -IOWR tdrIO IS16(ADR) tsu(IO W R) -IOIS16 tdfIO IS16(ADR) -WAIT tdW T(IO W R) tw (W T) th(IO W R) tdrIO W R(W T) Din Din Valid Figure 4-6 I/O Write Timing Diagram Notes: The maximum load on -WAIT, -INPACK, and -IOIS16 is 1 LSTTL with 50pF total load. All times are in nanoseconds. Minimum time from -WAIT high to -IOWR high is 0 nsec, but minimum -IOWR width must still be met. Din signifies data provided by the system to the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 37 CompactFlash Memory Card Product Manual 4.3.12 True IDE Mode I/O Input (Read) Timing Specification Table 4-9 True IDE Mode I/O Read Timing Item Symbol IEEE Symbol Min ns. Max ns. Data Delay after IORD td(IORD) tlGLQV 100 Data Hold following IORD th(IORD) tlGHQX 0 IORD Width Time tw(IORD) tlGLIGH 165 Address Setup before IORD tsuA(IORD) tAVIGL 70 Address Hold following IORD thA(IORD) tlGHAX 20 CE Setup before IORD tsuCE(IORD) tELIGL 5 CE Hold following IORD thCE(IORD) tlGHEH 20 IOIS16 Delay Falling from Address tdfIOIS16(ADR) tAVISL 35 IOIS16 Delay Rising from Address tdrIOIS16(ADR) tAVISH 35 An thA(IO RD) tsuA(IO RD) -C E tsuCE(IO RD) thCE(IO RD) tw (IO RD) -IORD tdrIO IS16(ADR) -IOIS16 td(IO RD) tdfIO IS16(ADR) th(IO RD) Dout Figure 4-7 True IDE Mode I/O Read Timing Diagram Notes: 38 The maximum load on -IOIS16 is 1 LSTTL with 50pF total load. All times are in nanoseconds. Minimum time from -WAIT high to -IORD high is 0 nsec, but minimum -IORD width must still be met. Dout signifies data provided by the CompactFlash Memory Card to the system. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.3.13 True IDE Mode I/O Output (Write) Timing Specification Table 4-10 True IDE Mode I/O Write Timing Item Symbol IEEE Symbol Min ns. Max ns. Data Setup before IOWR tsu(IOWR) tDVIWH 60 Data Hold following IOWR th(IOWR) tlWHDX 30 IOWR Width Time tw(IOWR) tlWLIWH 165 Address Setup before IOWR tsuA(IOWR) tAVIWL 70 Address Hold following IOWR thA(IOWR) tlWHAX 20 CE Setup before IOWR tsuCE(IOWR) tELIWL 5 CE Hold following IOWR thCE(IOWR) tlWHEH 20 IOIS16 Delay Falling from Address tdfIOIS16(ADR) tAVISL 35 IOIS16 Delay Rising from Address tdrIOIS16(ADR) tAVISH 35 An thA(IO W R) tsuA(IO W R) -C E tsuCE(IO W R) thCE(IO W R) tw (IO W R) -IOWR tdrIO IS16(ADR) -IOIS16 tdfIO IS16(ADR) Din tsu(IO W R) th(IO W R) Din Valid Figure 4-8 True IDE Mode I/O Write Timing Diagram Notes: The maximum load on -IOIS16 is 1 LSTTL with 50pF total load. All times are in nanoseconds. Minimum time from -WAIT high to -IOWR high is 0 nsec, but minimum -IOWR width must still be met. Din signifies data provided by the system to the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 39 CompactFlash Memory Card Product Manual 4.4 Card Configuration The CompactFlash Memory Cards are identified information about the CompactFlash Card t h a t by appropriate information in the Card may be used to arbitrate between multiple Information Structure (CIS). The following interrupt sources on the same interrupt level or to configuration registers are used to coordinate t h e replace status information that appears on I/O spaces and the Interrupt level of cards t h a t dedicated pins in memory cards that have are located in the system. In addition, these alternate use in I/O cards. registers provide a method for accessing status Table 4-11 Registers and Memory Space Decoding -CE2 -CE1 -REG - O E -WE A10 A 9 A8-A4 A 3 A 2 A 1 A 0 SELECTED SPACE 1 1 X X X X X XX X X X X Standby X 0 0 0 1 X 1 XX X X X 0 Configuration Registers Read 1 0 1 0 1 X X XX X X X X Common Memory Read (8 Bit D7-D0) 0 1 1 0 1 X X XX X X X X Common Memory Read (8 Bit D15-D8) 0 0 1 0 1 X X XX X X X 0 Common Memory Read (16 Bit D15-D0) X 0 0 1 0 X 1 XX X X X 0 Configuration Registers Write 1 0 1 1 0 X X XX X X X X Common Memory Write (8 Bit D7-D0) 0 1 1 1 0 X X XX X X X X Common Memory Write (8 Bit D15-D8) 0 0 1 1 0 X X XX X X X 0 Common Memory Write (16 Bit D15-D0) X 0 0 0 1 0 0 XX X X X 0 Card Information Structure Read 1 0 0 1 0 0 0 XX X X X 0 Invalid Access (CIS Write) 1 0 0 0 1 X X XX X X X 1 Invalid Access (Odd Attribute Read) 1 0 0 1 0 X X XX X X X 1 Invalid Access (Odd Attribute Write) 0 1 0 0 1 X X XX X X X X Invalid Access (Odd Attribute Read) 0 1 0 1 0 X X XX X X X X Invalid Access (Odd Attribute Write) Configuration Registers Decoding - C E 2 - C E 1 - R E G - O E - W E A 1 0 A 9 A 8 - A 4 A 3 A 2 A 1 A 0 SELECTED REGISTER X 0 0 0 1 0 1 00 0 0 0 0 Configuration Option Reg Read X 0 0 1 0 0 1 00 0 0 0 0 Configuration Option Reg Write X 0 0 0 1 0 1 00 0 0 1 0 Card Status Register Read X 0 0 1 0 0 1 00 0 0 1 0 Card Status Register Write X 0 0 0 1 0 1 00 0 1 0 0 Pin Replacement Register Read X 0 0 1 0 0 1 00 0 1 0 0 Pin Replacement Register Write X 0 0 0 1 0 1 00 0 1 1 0 Socket and Copy Register Read X 0 0 1 0 0 1 00 0 1 1 0 Socket and Copy Register Write Note: 40 The location of the card configuration registers should always be read from the CIS since these locations may vary in future products. No writes should be performed to the CompactFlash Memory Card attribute memory except to the card configuration register addresses. All other attribute memory locations are reserved. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.4.1 Attribute Memory Function Attribute memory is a space where CompactFlash Memory Card identification and configuration information is stored, and is limited to 8-bit wide accesses only at even addresses. The card configuration registers are also located here. during the cycle. As in the Main Memory Read functions, the signals -CE1 and -CE2 control t h e even-byte and odd-byte address, but only t h e even-byte data is valid during the Attribute Memory access. Refer to Table 4-12 below for signal states and bus validity for the Attribute Memory function. For the Attribute Memory Read function, signals -REG and -OE must be active and -WE inactive Table 4-12 Attribute Memory Function Function Mode -REG -CE2 -CE1 A9 A0 -OE -WE D15-D8 D7-D0 Standby Mode X H H X X X X High Z High Z Read Byte Access CIS ROM (8 bits) L H L L L L H High Z Even Byte Write Byte Access CIS (8 bits) (Invalid) L H L L L H L Don't Care Even Byte Read Byte Access Configuration (8 bits) L H L H L L H High Z Even Byte Write Byte Access Configuration (8 bits) L H L H L H L Don't Care Even Byte Read Word Access CIS (16 bits) L L L L X L H Not Valid Even Byte Write Word Access CIS (16 bits) (Invalid) L L L L X H L Don't Care Even Byte Read Word Access Configuration (16 bits) L L L H X L H Not Valid Even Byte Write Word Access Configuration (16 bits) L L L H X H L Don't Care Even Byte Note: The -CE signal or both the -OE signal and the -WE signal must be de-asserted between consecutive cycle operations. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 41 CompactFlash Memory Card Product Manual 4.4.2 Configuration Option Register (Address 200h in Attribute Memory) The Configuration Option Register is used to configure the cards interface, address decoding and interrupt and to issue a soft reset to t h e CompactFlash Memory Card. Operation D7 D6 D5 D4 D3 D2 D1 D0 R/W SRESET LevlREQ Conf5 Conf4 Conf3 Conf2 Conf1 Conf0 SRESET Soft Reset - Setting this bit to one (1), waiting the minimum reset width time and returning to zero (0) places the CompactFlash Memory Card in the Reset state. Setting this bit to one (1) is equivalent to assertion of the +RESET signal except that the SRESET bit is not cleared. Returning this bit to zero (0) leaves the CompactFlash Memory Card in the same un-configured, Reset state as following power-up and hardware reset. This bit is set to zero (0) by power-up and hardware reset. Using the PCMCIA Soft Reset is considered a hard Reset by the ATA Commands. Contrast with Soft Reset in the Device Control Register. LevlREQ This bit is set to one (1) when Level Mode Interrupt is selected, and zero (0) when Pulse Mode is selected. Set to zero (0) by Reset. Conf5 - Conf0 Configuration Index. Set to zero (0) by reset. It's used to select operation mode of the CompactFlash Memory Card as shown below. Note: Conf5 and Conf4 are reserved and must be written as zero (0) Table 4-13 Card Configurations 4.4.3 Conf5 Conf4 Conf3 Conf2 Conf1 Conf0 Disk Card Mode 0 0 0 0 0 0 Memory Mapped 0 0 0 0 0 1 I/O Mapped, Any 16 byte system decoded boundary 0 0 0 0 1 0 I/O Mapped, 1F0-1F7/3F6-3F7 0 0 0 0 1 1 I/O Mapped, 170-177/376-377 Card Configuration and Status Register (Address 202h in Attribute Memory) The Card Configuration and Status Register contains information about the CardOs condition. Card Configuration and Status Register Organization: Operation D7 D6 D5 D4 D3 D2 D1 D0 Read Changed SigChg IOis8 0 0 PwrDwn Int 0 Write 0 SigChg IOis8 0 0 PwrDwn 0 0 42 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Changed Indicates that one or both of the Pin Replacement register CRdy, or CWProt bits are set to one (1). When the Changed bit is set, -STSCHG Pin 46 is held low if the SigChg bit is a One (1) and the CompactFlash Memory Card is configured for the I/O interface. SigChg This bit is set and reset by the host to enable and disable a state-change "signal" from the Status Register, the Changed bit control pin 46 the Changed Status signal. If no state change signal is desired, this bit should be set to zero (0) and pin 46 (-STSCHG) signal will be held high while the CompactFlash Memory Card is configured for I/O. IOis8 The host sets this bit to a one (1) if the CompactFlash Memory Card is to be configured in an 8 bit I/O mode. The CompactFlash Card is always configured for both 8- and 16-bit I/O, so this bit is ignored. PwrDwn This bit indicates whether the host requests the CompactFlash Memory Card to be in the power saving or active mode. When the bit is one (1), the CompactFlash Card enters a power down mode. When zero (0), the host is requesting the CompactFlash Card to enter the active mode. The PCMCIA Rdy/-Bsy value becomes BUSY when this bit is changed. Rdy/-Bsy will not become Ready until the power state requested has been entered. The CompactFlash Card automatically powers down when it is idle and powers back up when it receives a command. Int This bit represents the internal state of the interrupt request. This value is available whether or not I/O interface has been configured. This signal remains true until the condition which caused the interrupt request has been serviced. If interrupts are disabled by the -IEN bit in the Device Control Register, this bit is a zero (0). 4.4.4 Pin Replacement Register (Address 204h in Attribute Memory) Operation D7 D6 D5 D4 D3 D2 D1 D0 Read 0 0 CRdy/-Bsy CWProt 1 1 RRdy/-Bsy RWProt Write 0 0 CRdy/-Bsy CWProt 0 0 MRdy/-Bsy MWProt CRdy/-Bsy This bit is set to one (1) when the bit RRdy/-Bsy changes state. This bit can also be written by the host. CWProt This bit is set to one (1) when the RWprot changes state. This bit may also be written by the host. RRdy/-Bsy This bit is used to determine the internal state of the Rdy/-Bsy signal. This bit may be used to determine the state of the Ready/-Busy as this pin has been reallocated for use as Interrupt Request on an I/O card. When written, this bit acts as a mask for writing the corresponding bit CRdy/-Bsy. RWProt This bit is always zero (0) since the CompactFlash Memory Card does not have a Write Protect switch. When written, this bit acts as a mask for writing the corresponding bit CWProt. MRdy/-Bsy This bit acts as a mask for writing the corresponding bit CRdy/-Bsy. MWProt This bit when written acts as a mask for writing the corresponding bit CWProt. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 43 CompactFlash Memory Card Product Manual Table 4-14 Pin Replacement Changed Bit/Mask Bit Values Initial Value 4.4.5 Written by Host Final Comments of (C) Status "C" Bit "M" Bit "C" Bit 0 X 0 0 Unchanged 1 X 0 1 Unchanged X 0 1 0 Cleared by Host X 1 1 1 Set by Host Socket and Copy Register (Address 206h in Attribute Memory) This register contains additional configuration information. This register is always written by the system before writing the cardOs Configuration Index Register. Socket and Copy Register Organization: Operation D7 D6 D5 D4 D3 D2 D1 D0 Read Reserved 0 0 Drive # 0 0 0 0 Write 0 0 0 Drive # (0) X X X X Reserved This bit is reserved for future standardization. This bit must be set to zero (0) by the software when the register is written. Drive # This bit indicates the drive number of the card if twin card configuration is supported. X The socket number is ignored by the CompactFlash Memory Card. 44 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.5 I/O Transfer Function 4.5.1 I/O Function The I/O transfer to or from the CompactFlash Memory Card can be either 8 or 16 bits. When a 16-bit accessible port is addressed, the signal -IOIS16 is asserted by the CompactFlash Card. Otherwise, the -IOIS16 signal is de-asserted. When a 16 bit transfer is attempted, and t h e -IOIS16 signal is not asserted by t h e CompactFlash Card, the system must generate a pair of 8-bit references to access the wordOs even byte and odd byte. The CompactFlash Card permits both 8 and 16 bit accesses to all of its I/O addresses, so -IOIS16 is asserted for all addresses to which the CompactFlash Card responds. The CompactFlash Memory Card may request t h e host to extend the length of an input cycle until data is ready by asserting the -WAIT signal a t the start of the cycle. Table 4-15 I/O Function Function Code -REG -CE2 -CE1 A0 -IORD -IOWR D15-D8 D7-D0 Standby Mode X H H X X X High Z High Z Byte Input Access (8 bits) L L H H L L L H L L H H High Z High Z Even-Byte Odd-Byte Byte Output Access (8 bits) L L H H L L L H H H L L Don't Care Don't Care Even-Byte Odd-Byte Word Input Access (16 bits) L L L L L H Odd-Byte Even-Byte Word Output Access (16 bits) L L L L H L Odd-Byte Even-Byte I/O Read Inhibit H X X X L H Don't Care Don't Care I/O Write Inhibit H X X X H L High Z High Z High Byte Input Only (8 bits) L L H X L H Odd-Byte High Z High Byte Output Only (8 bits) L L H X H L Odd-Byte Don't Care SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 45 CompactFlash Memory Card Product Manual 4.6 Common Memory Transfer Function 4.6.1 Common Memory Function The Common Memory transfer to or from t h e CompactFlash Memory Card can be either 8 or 16 bits. The CompactFlash Memory Card permits both 8 and 16 bit accesses to all of its Common Memory addresses. The CompactFlash Memory Card may request t h e host to extend the length of a memory write cycle or extend the length of a memory read cycle until data is ready by asserting the -WAIT signal a t the start of the cycle. Table 4-16 Common Memory Function Function Code -REG -CE2 -CE1 A0 -OE -WE D15-D8 D7-D0 Standby Mode X H H X X X High Z High Z Byte ReadAccess (8 bits) H H H H L L L H L L H H High Z High Z Even-Byte Odd-Byte Byte Write Access (8 bits) H H H H L L L H H H L L Don't Care Don't Care Even-Byte Odd-Byte Word Read Access (16 bits) H L L X L H Odd-Byte Even-Byte Word Write Access (16 bits) H L L X H L Odd-Byte Even-Byte Odd Byte Read Only (8 bits) H L H X L H Odd-Byte High Z Odd Byte Write Only (8 bits) H L H X H L Odd-Byte Don't Care 46 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 4.7 True IDE Mode I/O Transfer Function 4.7.1 True IDE Mode I/O Function The CompactFlash Memory Card can be configured in a True IDE Mode of operation. This CompactFlash Card is configured in this mode only when the -OE input signal is grounded by t h e host. In this True IDE Mode, the PCMCIA protocol and configuration are disabled and only I/O operations to the Task File and Data Register are allowed. In this mode, no Memory or Attribute Registers are accessible to the host. CompactFlash Cards permit 8 bit data accesses i f the user issues a Set Feature Command to put t h e device in 8 bit Mode. Note: Removing and reinserting the CompactFlash Memory Card while the host computer's power is on will reconfigure the CompactFlash Card to PC Card ATA mode from the original True IDE Mode. To configure the CompactFlash Card in True IDE Mode, the 68-pin socket must be power cycled with the CompactFlash Card inserted and -OE (output enable) grounded by the host. The following table defines the function of t h e operations for the True IDE Mode. Table 4-17 IDE Mode I/O Function Function Code -CE2 -CE1 A0 -IORD -IOWR D15-D8 D7-D0 Invalid Mode L L X X X High Z High Z Standby Mode H H X X X High Z High Z Task File Write H L 1-7h H L Don't Care Data In Task File Read H L 1-7h L H High Z Data Out Data Register Write H L 0 H L Odd-Byte In Even-Byte In Data Register Read H L 0 L H Odd-Byte Out Even-Byte Out Control Register Write L H 6h H L Don't Care Control In Alt Status Read L H 6h L H High Z Status Out SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 47 CompactFlash Memory Card Product Manual 5.0 ATA Drive Register Set Definition and Protocol The CompactFlash Memory Card can be configured as a high performance I/O device through: a . ) Standard PC-AT disk I/O address spaces 1F0h-1F7h, 3F6h-3F7h (primary); 170h177h, 376h-377h (secondary) with IRQ 14 (or other available IRQ). The communication to or from the CompactFlash Memory Card is done using the Task File registers which provide all the necessary registers for control and status information. The PCMCIA interface connects peripherals to the host using four register mapping methods. The following is a detailed description of these methods: b.) Any system decoded 16 byte I/O block using any available IRQ. c.) Memory space. Table 5-1 I/O Configurations Standard Configurations 48 Config Index IO or Memory Address Drive # Description 0 Memory 0-F, 400-7FF 0 Memory Mapped 1 I/O XX0-XXF 0 I/O Mapped 16 Contiguous Registers 2 I/O 1F0-1F7, 3F6-3F7 0 Primary I/O Mapped Drive 0 2 I/O 1F0-1F7, 3F6-3F7 1 Primary I/O Mapped Drive 1 3 I/O 170-177, 376-377 0 Secondary I/O Mapped Drive 0 3 I/O 170-177, 376-377 1 Secondary I/O Mapped Drive 1 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 5.1 I/O Primary and Secondary Address Configurations Table 5-2 Primary and Secondary I/O Decoding Notes: -REG A9-A4 A3 A2 A1 A0 -IORD=0 -IOWR=0 0 1F(17) 0 0 0 0 Even RD Data Even WR Data 0 1F(17) 0 0 0 1 Error Register Features 0 1F(17) 0 0 1 0 Sector Count Sector Count 0 1F(17) 0 0 1 1 Sector No. Sector No. 0 1F(17) 0 1 0 0 Cylinder Low Cylinder Low 0 1F(17) 0 1 0 1 Cylinder High Cylinder High 0 1F(17) 0 1 1 0 Select Card/Head Select Card/Head 0 1F(17) 0 1 1 1 Status Command 0 3F(37) 0 1 1 0 Alt Status Device Control 0 3F(37) 0 1 1 1 Drive Address Reserved Note 1, 2 1 1. Register 0 is accessed with -CE1 low and -CE2 low (and A0 = Don't Care) as a word register on the combined Odd Data Bus and Even Data Bus (D15-D0). This register may also be accessed by a pair of byte accesses to the offset 0 with -CE1 low and -CE2 high. Note that the address space of this word register overlaps the address space of the Error and Feature byte-wide registers which lie at offset 1. When accessed twice as byte register with -CE1 low, the first byte to be accessed is the even byte of the word and the second byte accessed is the odd byte of the equivalent word access. 2. A byte access to register 0 with -CE1 high and -CE2 low accesses the error (read) or feature (write) register. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 49 CompactFlash Memory Card Product Manual 5.2 Contiguous I/O Mapped Addressing When the system decodes a contiguous block of I/O registers to select the CompactFlash Memory Card, the registers are accessed in the block of I/O space decoded by the system as follows: Table 5-3 Contiguous I/O Decoding -REG A3 A2 A1 A0 Offset -IORD=0 -IOWR=0 Notes 0 0 0 0 0 0 Even RD Data Even WR Data 1 0 0 0 0 1 1 Error Features 2 0 0 0 1 0 2 Sector Count Sector Count 0 0 0 1 1 3 Sector No. Sector No. 0 0 1 0 0 4 Cylinder Low Cylinder Low 0 0 1 0 1 5 Cylinder High Cylinder High 0 0 1 1 0 6 Select Card /Head Select Card/Head 0 0 1 1 1 7 Status Command 0 1 0 0 0 8 Dup Even RD Data Dup. Even WR Data 2 0 1 0 0 1 9 Dup. Odd RD Data Dup. Odd WR Data 2 0 1 1 0 1 D Dup. Error Dup. Features 2 0 1 1 1 0 E Alt Status Device Ctl 0 1 1 1 1 F Drive Address Reserved Notes: 1. Register 0 is accessed with -CE1 low and -CE2 low (and A0 = Don't Care) as a word register on the combined Odd Data Bus and Even Data Bus (D15-D0). This register may also be accessed by a pair of byte accesses to the offset 0 with -CE1 low and -CE2 high. Note that the address space of this word register overlaps the address space of the Error and Feature byte-wide registers that lie at offset 1. When accessed twice as byte register with -CE1 low, the first byte to be accessed is the even byte of the word and the second byte accessed is the odd byte of the equivalent word access. A byte access to register 0 with -CE1 high and -CE2 low accesses the error (read) or feature (write) register. 2. Registers at offset 8, 9 and D are non-overlapping duplicates of the registers at offset 0 and 1. Register 8 is equivalent to register 0, while register 9 accesses the odd byte. Therefore, if the registers are byte accessed in the order 9 then 8 the data will be transferred odd byte then even byte. Repeated byte accesses to register 8 or 0 will access consecutive (even than odd) bytes from the data buffer. Repeated word accesses to register 8, 9 or 0 will access consecutive words from the data buffer. Repeated byte accesses to register 9 are not supported. However, repeated alternating byte accesses to registers 8 then 9 will access consecutive (even then odd) bytes from the data buffer. Byte accesses to register 9 access only the odd byte of the data. 3. Address lines which are not indicated are ignored by the CompactFlash Memory Card for accessing all the registers in this table. 50 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 5.3 Memory Mapped Addressing When the CompactFlash Memory Card registers are accessed via memory references, the registers appear in the common memory space window: 0-2K bytes as follows: Table 5-4 Memory Mapped Decoding -REG A10 A9-A4 A3 A2 A1 -OE=0 -WE=0 Notes 1 0 X 0 0 0 0 0 Even RD Data Even WR Data 1 1 0 X 0 0 0 1 1 Error Features 2 1 0 X 0 0 1 0 2 Sector Count Sector Count 1 0 X 0 0 1 1 3 Sector No. Sector No. 1 0 X 0 1 0 0 4 Cylinder Low Cylinder Low 1 0 X 0 1 0 1 5 Cylinder High Cylinder High 1 0 X 0 1 1 0 6 Select Card /Head Select Card/Head 1 0 X 0 1 1 1 7 Status Command 1 0 X 1 0 0 0 8 Dup. Even RD Data Dup. Even WR Data 2 1 0 X 1 0 0 1 9 Dup. Odd RD Data Dup. Odd WR Data 2 1 0 X 1 1 0 1 D Dup. Error Dup. Features 2 1 0 X 1 1 1 0 E Alt Status Device Ctl 1 0 X 1 1 1 1 F Drive Address Reserved 1 1 X X X X 0 8 Even RD Data Even WR Data 3 1 1 X X X X 1 9 Odd RD Data Odd WR Data 3 Notes: A0 Offset 1. Register 0 is accessed with -CE1 low and -CE2 low as a word register on the combined Odd Data Bus and Even Data Bus (D15-D0). This register may also be accessed by a pair of byte accesses to the offset 0 with -CE1 low and -CE2 high. Note that the address space of this word register overlaps the address space of the Error and Feature byte-wide registers that lie at offset 1. When accessed twice as byte register with -CE1 low, the first byte to be accessed is the even byte of the word and the second byte accessed is the odd byte of the equivalent word access. A byte access to address 0 with -CE1 high and -CE2 low accesses the error (read) or feature (write) register. 2. Registers at offset 8, 9 and D are non-overlapping duplicates of the registers at offset 0 and 1. Register 8 is equivalent to register 0, while register 9 accesses the odd byte. Therefore, if the registers are byte accessed in the order 9 then 8 the data will be transferred odd byte then even byte. Repeated byte accesses to register 8 or 0 will access consecutive (even then odd) bytes from the data buffer. Repeated word accesses to register 8, 9 or 0 will access consecutive words from the data buffer. Repeated byte accesses to register 9 are not supported. However, repeated alternating byte accesses to registers 8 then 9 will access consecutive (even then odd) bytes from the data buffer. Byte accesses to register 9 access only the odd byte of the data. 3. Accesses to even addresses between 400h and 7FFh access register 8. Accesses to odd addresses between 400h and 7FFh access register 9. This 1 Kbyte memory window to the data register is provided so that hosts can perform memory to memory block moves to the data register when the register lies in memory space. Some hosts, such as the X86 processors, must increment both the source and destination addresses when executing the memory to memory block move instruction. Some PCMCIA socket adapters also have auto incrementing address logic embedded within them. This address window allows these hosts and adapters to function efficiently. Note that this entire window accesses the Data Register FIFO and does not allow random access to the data buffer within the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 51 CompactFlash Memory Card Product Manual 5.4 True IDE Mode Addressing When the CompactFlash Memory Card is configured in the True IDE Mode the I/O decoding is as follows: Table 5-5 True IDE Mode I/O Decoding 52 -CE2 -CE1 A2 A1 A0 -IORD=0 -IOWR=0 1 0 0 0 0 Even RD Data Even WR Data 1 0 0 0 1 Error Register Features 1 0 0 1 0 Sector Count Sector Count 1 0 0 1 1 Sector No. Sector No. 1 0 1 0 0 Cylinder Low Cylinder Low 1 0 1 0 1 Cylinder High Cylinder High 1 0 1 1 0 Select Card/Head Select Card/Head 1 0 1 1 1 Status Command 0 1 1 1 0 Alt Status Device Control 0 1 1 1 1 Drive Address Reserved Note SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 5.5 ATA Registers Note: In accordance with the PCMCIA specification: each of the registers below which is located at an odd offset address may be accessed at its normal address and also the corresponding even address (normal address -1) using data bus lines (D15-D8) when -CE1 is high and -CE2 is low unless -IOIS16 is high (not asserted) and an I/O cycle is being performed. The table below describes the combinations of data register access and is provided to assist in understanding the overlapped Data Register and Error/Feature Register rather than to attempt to define general PCMCIA word and byte access modes and operations. See the PCMCIA PC Card Standard Release 2.0 for definitions of the Card Accessing Modes for I/O and Memory cycles. 5.5.1 Data Register (Address - 1F0[170];Offset 0,8,9) Note that because of the overlapped registers, access to the 1F1, 171 or offset 1 are not defined for word (-CE2 = 0 and -CE1 = 0) operations. SanDisk products treat these accesses as accesses to t h e Word Data Register. The duplicated registers a t offsets 8, 9 and Dh have no restrictions on t h e operations that can be performed by the socket. The Data Register is a 16 bit register, and it is used to transfer data blocks between t h e CompactFlash Memory Card data buffer and t h e Host. This register overlaps the Error Register. Data Register CE2- CE1- A0 Offset Data Bus Word Data Register 0 0 X 0,8,9 D15-D0 Even Data Register 1 0 0 0,8 D7-D0 Odd Data Register 1 0 1 9 D7-D0 Odd Data Register 0 1 X 8,9 D15-D8 Error / Feature Register 1 0 1 1, Dh D7-D0 Error / Feature Register 0 1 X 1 D15-D8 Error / Feature Register 0 0 X Dh D15-D8 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 53 CompactFlash Memory Card Product Manual 5.5.2 Error Register (Address - 1F1[171]; Offset 1, 0Dh Read Only) This register contains additional information about the source of an error when an error is indicated in bit 0 of the Status register. The bits are defined as follows: D7 D6 D5 D4 D3 D2 D1 D0 BBK UNC 0 IDNF 0 ABRT 0 AMNF This register is also accessed on data bits D15-D8 during a write operation to offset 0 with -CE2 low and -CE1 high. Bit Bit Bit Bit Bit Bit 7 6 5 4 3 2 (BBK) (UNC) (IDNF) (Abort) Bit 1 Bit 0 (AMNF) 5.5.3 This bit is set when a Bad Block is detected. This bit is set when an Uncorrectable Error is encountered. This bit is 0. The requested sector ID is in error or cannot be found. This bit is 0. This bit is set if the command has been aborted because of a CompactFlash Memory Card status condition: (Not Ready, Write Fault, etc.) or when an invalid command has been issued. This bit is 0. This bit is set in case of a general error. Feature Register (Address - 1F1[171]; Offset 1, 0Dh Write Only) This register provides information regarding features of the CompactFlash Memory Card t h a t the host can utilize. This register is also accessed on data bits D15-D8 during a write operation to Offset 0 with -CE2 low and -CE1 high. 5.5.5 This register contains the starting sector number or bits 7-0 of the Logical Block Address (LBA) for any CompactFlash Memory Card data access for the subsequent command. 5.5.6 5.5.4 Sector Count Register (Address - 1F2[172]; Offset 2) This register contains the number of sectors of data requested to be transferred on a read or write operation between the host and the CompactFlash Memory Card. If the value in this register is zero, a count of 256 sectors is specified. If the command was successful, this register is zero at command completion. If not successfully completed, the register contains the number of sectors that need to be transferred in order to complete the request. 54 Sector Number (LBA 7-0) Register (Address - 1F3[173]; Offset 3) Cylinder Low (LBA 15-8) Register (Address - 1F4[174]; Offset 4) This register contains the low order 8 bits of t h e starting cylinder address or bits 15-8 of t h e Logical Block Address. 5.5.7 Cylinder High (LBA 23-16) Register (Address - 1F5[175]; Offset 5) This register contains the high order bits of t h e starting cylinder address or bits 23-16 of t h e Logical Block Address. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 5.5.8 Drive/Head (LBA 27-24) Register (Address 1F6[176]; Offset 6) The Drive/Head register is used to select t h e drive and head. It is also used to select LBA addressing instead of cylinder/head/sector addressing. The bits are defined as follows: D7 D6 D5 D4 D3 D2 D1 D0 1 LBA 1 DRV HS3 HS2 HS1 HS0 Bit 7 Bit 6 Bit 5 Bit 4 (DRV) Bit 3 (HS3) Bit 2 (HS2) Bit 1 (HS1) Bit 0 (HS0) This bit is set to 1. LBA is a flag to select either Cylinder/Head/Sector (CHS) or Logical Block Address Mode (LBA). When LBA=0, Cylinder/Head/Sector mode is selected. When LBA=1, Logical Block Address is selected. In Logical Block Mode, the Logical Block Address is interpreted as follows: LBA07-LBA00: Sector Number Register D7-D0. LBA15-LBA08: Cylinder Low Register D7-D0. LBA23-LBA16: Cylinder High Register D7-D0. LBA27-LBA24: Drive/Head Register bits HS3-HS0. This bit is set to 1. This bit will have the following meaning. DRV is the drive number. When DRV=0, drive (card) 0 is selected When DRV=1, drive (card) 1 is selected. The CompactFlash Card is set to be Card 0 or 1 using the copy field of the PCMCIA Socket & Copy configuration register. When operating in the Cylinder , Head, Sector mode, this is bit 3 of the head number. It is Bit 27 in the Logical Block Address mode. When operating in the Cylinder, Head, Sector mode, this is bit 2 of the head number. It is Bit 26 in the Logical Block Address mode. When operating in the Cylinder, Head, Sector mode, this is bit 1 of the head number. It is Bit 25 in the Logical Block Address mode. When operating in the Cylinder, Head, Sector mode, this is bit 0 of the head number. It is Bit 24 in the Logical Block Address mode. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 55 CompactFlash Memory Card Product Manual 5.5.9 Status & Alternate Status Registers (Address 1F7[177]&3F6[376]; Offsets 7 & Eh) These registers return the CompactFlash Memory Card status when read by the host. Reading t h e Status register does clear a pending interrupt while reading the Auxiliary Status register does not. The meaning of the status bits are described as follows: D7 D6 D5 D4 D3 D2 D1 D0 BUSY RDY DWF DSC DRQ CORR 0 ERR Bit 7 (BUSY) The busy bit is set when the CompactFlash Memory Card has access to the command buffer and registers and the host is locked out from accessing the command register and buffer. No other bits in this register are valid when this bit is set to a 1. Bit 6 (RDY) RDY indicates whether the device is capable of performing CompactFlash Memory Card operations. This bit is cleared at power up and remains cleared until the CompactFlash Card is ready to accept a command. Bit 5 (DWF) This bit, if set, indicates a write fault has occurred. Bit 4 (DSC) This bit is set when the CompactFlash Memory Card is ready. Bit 3 (DRQ) The Data Request is set when the CompactFlash Memory Card requires that information be transferred either to or from the host through the Data register. Bit 2 (CORR) This bit is set when a Correctable data error has been encountered and the data has been corrected. This condition does not terminate a multi-sector read operation. Bit 1 (IDX) This bit is always set to 0. Bit 0 (ERR) This bit is set when the previous command has ended in some type of error. The bits in the Error register contain additional information describing the error. 5.5.10 Device Control Register (Address - 3F6[376]; Offset Eh) This register is used to control the CompactFlash Memory Card interrupt request and to issue an Bit Bit Bit Bit Bit Bit D7 D6 D5 D4 D3 D2 D1 D0 X X X X 1 SW Rst -IEn 0 7 6 5 4 3 2 (SW Rst) Bit 1 (-IEn) Bit 0 56 ATA soft reset to the card. The bits are defined as follows: This bit is an X (don't care). This bit is an X (don't care). This bit is an X (don't care). This bit is an X (don't care). This bit is ignored by the CompactFlash Memory Card. This bit is set to 1 in order to force the CompactFlash Memory Card to perform an AT Disk controller Soft Reset operation. This does not change the PCMCIA Card Configuration Registers (4.3.2 to 4.3.5) as a hardware Reset does. The Card remains in Reset until this bit is reset to '0'. The Interrupt Enable bit enables interrupts when the bit is 0. When the bit is 1, interrupts from the CompactFlash Memory Card are disabled. This bit also controls the Int bit in the Configuration and Status Register. This bit is set to 1 at power on and Reset. This bit is ignored by the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 5.5.11 Card (Drive) Address Register (Address 3F7[377]; Offset Fh) This register is provided for compatibility with the AT disk drive interface. It is recommended that this register not be mapped into the host's I/O space because of potential conflicts on Bit 7. The bits are defined as follows: D7 D6 D5 D4 D3 D2 D1 D0 X -WTG -HS3 -HS2 -HS1 -HS0 -nDS1 -nDS0 Bit 7 Bit Bit Bit Bit Bit Bit Bit This bit is unknown. Implementation Note: Conflicts may occur on the host data bus when this bit is provided by a Floppy Disk Controller operating at the same addresses as the CompactFlash Memory Card. Following are some possible solutions to this problem for the PCMCIA implementation: 1. Locate the CompactFlash Memory Card at a non-conflicting address, i.e. Secondary address (377) or in an independently decoded Address Space when a Floppy Disk Controller is located at the Primary addresses. 2. Do not install a Floppy and a CompactFlash Memory Card in the system at the same time. 3. Implement a socket adapter which can be programmed to (conditionally) tri-state D7 of I/0 address 3F7/377 when a CompactFlash Memory Card is installed and conversely to tri-state D6-D0 of I/O address 3F7/377 when a floppy controller is installed. 4. Do not use the CompactFlash Memory Card's Drive Address register. This may be accomplished by either a) If possible, program the host adapter to enable only I/O addresses 1F0-1F7, 3F6 (or 170-177, 176) to the CompactFlash Memory Card or b) if provided use an additional Primary / Secondary configuration in the CompactFlash Card which does not respond to accesses to I/O locations 3F7 and 377. With either of these implementations, the host software must not attempt to use information in the Drive Address Register. 6 (-WTG) This bit is 0 when a write operation is in progress, otherwise, it is 1. 5 (-HS3) This bit is the negation of bit 3 in the Drive/Head register. 4 (-HS2) This bit is the negation of bit 2 in the Drive/Head register. 3 (-HS1) This bit is the negation of bit 1 in the Drive/Head register. 2 (-HS0) This bit is the negation of bit 0 in the Drive/Head register. 1 (-nDS1) This bit is 0 when drive 1 is active and selected. 0 (-nDS0) This bit is 0 when the drive 0 is active and selected. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 57 CompactFlash Memory Card Product Manual 6.0 ATA Command Description This section defines the software requirements and the format of the commands the host sends to t h e CompactFlash Memory Cards. Commands are issued to the CompactFlash Card by loading t h e required registers in the command block with t h e supplied parameters, and then writing t h e command code to the Command Register. The manner in which a command is accepted varies. There are three classes (see Table 6-1) of command acceptance, all dependent on the host not issuing commands unless the CompactFlash Card is not busy. (The BUSY bit in the status and alternate status registers is 0.) Upon receipt of a Class 1 command, t h e CompactFlash Card sets the BUSY bit within 400 nsec. Upon receipt of a Class 2 command, t h e CompactFlash Memory Card sets t h e BUSY bit within 400 nsec, sets up t h e sector buffer for a write operation, sets DRQ within 700 sec, and clears t h e BUSY bit within 400 nsec of setting DRQ. Upon receipt of a Class 3 command, t h e CompactFlash Memory Card sets t h e BUSY bit within 400 nsec, sets up t h e sector buffer for a write operation, sets DRQ within 20 msec (assuming no reassignments), and clears the BUSY bit within 400 nsec of setting DRQ. 6.1 ATA Command Set Table 6-1 summarizes the ATA command set with the paragraphs that follow describing t h e individual commands and the task file for each. 58 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 6-1 ATA Command Set Class COMMAND Code FR SC SN CY DH LBA 1 Check Power Mode E5h or 98h - - - - D - 1 Execute Drive Diagnostic 90h - - - - D - 1 Erase Sector(s) (Note 1) C0h - Y Y Y Y Y 2 Format Track 50h - Y - Y Y Y 1 Identify Drive ECh - - - - D - 1 Idle E3h or 97h - Y - - D - 1 Idle Immediate E1h or 95h - - - - D - 1 Initialize Drive Parameters 91h - Y - - Y - 1 Read Buffer E4h - - - - D - 1 Read Multiple C4h - Y Y Y Y Y 1 Read Long Sector 22h or 23h - - Y Y Y Y 1 Read Sector(s) 20h or 21h - Y Y Y Y Y 1 Read Verify Sector(s) 40h or 41h - Y Y Y Y Y 1 Recalibrate 1Xh - - - - D - 1 Request Sense (Note 1) 03h - - - - D - 1 Seek 7Xh - - Y Y Y Y 1 Set Features EFh Y - - - D - 1 Set Multiple Mode C6h - Y - - D - 1 Set Sleep Mode E6h or 99h - - - - D - 1 Stand By E2h or 96h - - - - D - 1 Stand By Immediate E0h or 94h - - - - D - 1 Translate Sector (Note 1) 87h - Y Y Y Y Y 1 Wear Level (Note 1) F5h - - - - Y - 2 Write Buffer E8h - - - - D - 2 Write Long Sector 32h or 33h - - Y Y Y Y 3 Write Multiple C5h - Y Y Y Y Y 3 Write Multiple w/o Erase ( 1) CDh - Y Y Y Y Y 2 Write Sector(s) 30h or 31h - Y Y Y Y Y 2 Write Sector(s) w/o Erase ( 1) 38h - Y Y Y Y Y 2 Write Verify Sector(s) 3Ch - Y Y Y Y Y Note 1: This command is not a standard PC Card ATA command but provides additional functionality. Definitions: FR = Features Register, SC = Sector Count Register, SN = Sector Number Register, CY = Cylinder Registers, DH = Card/Drive/Head Register, LBA = Logical Block Address Mode Supported (see command descriptions for use). Y - The register contains a valid parameter for this command. For the Drive/Head Register Y means both the CompactFlash Memory Card and head parameters are used; D - only the CompactFlash Memory Card parameter is valid and not the head parameter. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 59 CompactFlash Memory Card Product Manual 6.1.1 Check Power Mode - 98H, E5H Bit -> 7 6 5 4 Command (7) 3 X Drive 0 X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command checks the power mode. If the CompactFlash Memory Card is in, going to, or recovering from the sleep mode, t h e CompactFlash Card sets BSY, sets the Sector Count Register to 00h, clears BSY and generates an interrupt. If the CompactFlash Memory Card is in Idle mode, the CompactFlash Card sets BSY, sets t h e Sector Count Register to FFh, clears BSY and generates an interrupt. Execute Drive Diagnostic - 90H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 90H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command performs the internal diagnostic tests implemented by the CompactFlash Memory Card. 60 1 E5H or 98H C/D/H (6) 6.1.2 2 The Diagnostic codes shown in Table 6-2 are returned in the Error Register at the end of t h e command. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 6-2 Diagnostic Codes Code Error Type 01h No Error Detected 02h Formatter Device Error 03h Sector Buffer Error 04h ECC Circuitry Error 05h Controlling Microprocessor Error 8Xh Slave Failed (True IDE Mode) 6.1.3 Erase Sector(s) - C0H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 C0H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command is used to pre-erase and condition data sectors in advance of a Write without Erase or Write Multiple without Erase command. There is no data transfer associated with this command but since an implied write ID (header) operation is performed, a Write Fault error status can occur. Refer to section 1.8.5 Using the Erase Sector and Write without Erase Commands for an expanded definition of the Erase Sector(s) command. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 61 CompactFlash Memory Card Product Manual 6.1.4 Format Track - 50H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 1 LBA 1 Drive 0 Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) X (LBA 7-0) Sec Cnt (2) Count (LBA mode only) Feature (1) X 6.1.5 1 50H This command writes the desired head and cylinder of the selected drive with a FFh pattern. To remain host backward compatible, t h e CompactFlash Memory Card expects a sector buffer of data from the host to follow t h e command with the same protocol as the Write Sector(s) command although the information in the buffer is not used by the CompactFlash Card. If LBA=1 then the number of sectors to format is taken from the Sec Cnt register (0=256). Identify Drive - ECH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 ECH X X X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X The Identify Drive command enables the host to receive parameter information from t h e CompactFlash Memory Card. This command has the same protocol as the Read Sector(s) command. The parameter words in the buffer have t h e 62 2 arrangement and meanings defined in Table 6-3. All reserved bits or words are zero. Table 6-3 is the definition for each field in the Identify Drive Information. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 6-3 Identify Drive Information Word Address Default Value Total Bytes Data Field Type Information 0 848AH 2 General configuration bit-significant information 1 XXXX 2 Default number of cylinders 2 0000H 2 Reserved 3 XXXX 2 Default number of heads 4 0000H 2 Number of unformatted bytes per track 5 0240H 2 Number of unformatted bytes per sector 6 XXXX 2 Default number of sectors per track 7-8 XXXX 4 Number of sectors per card (Word 7 = MSW, Word 8 = LSW) 9 0000H 2 Reserved 10-19 aaaa 20 Serial number in ASCII (Right Justified) 20 0002H 2 Buffer type (dual ported) 21 0002H 2 Buffer size in 512 byte increments 22 0004H 2 # of ECC bytes passed on Read/Write Long Commands 23-26 aaaa 8 Firmware revision in ASCII (Rev M.ms) set by code Big Endian Byte Order in Word 27-46 aaaa 40 Model number in ASCII (Left Justified) Big Endian Byte Order in Word 47 0001H 2 Maximum of 1 sector on Read/Write Multiple command 48 0000H 2 Double Word not supported 49 0200H 2 Capabilities: DMA NOT Supported (bit 8), LBA supported (bit 9) 50 0000H 2 Reserved 51 0100H 2 PIO data transfer cycle timing mode 1 52 0000H 2 DMA data transfer cycle timing mode Not Supported 53 0001H 2 Translation parameters are valid 54 XXXX 2 Current numbers of cylinders 55 XXXX 2 Current numbers of heads 56 XXXX 2 Current sectors per track 57-58 XXXX 4 Current capacity in sectors (LBAs)(Word 57 = LSW, Word 58 = MSW) 59 010XH 2 Multiple sector setting is valid 60-61 XXXX 4 Total number of sectors addressable in LBA Mode 62-127 0000H 138 128-159 0000H 64 160-255 0000H 192 Reserved Reserved vendor unique bytes Reserved SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 63 CompactFlash Memory Card Product Manual 6.1.5.1 General Configuration 6.1.5.7 Number of Sectors per Card This field informs the host that this is a nonmagnetic, hard sectored, removable storage device with a transfer rate greater than 10 mb/sec and is not MFM encoded. This field contains the number of sectors per CompactFlash Memory Card. This double word value is also the first invalid address in LBA translation mode. 6.1.5.2 6.1.5.8 Default Number of Cylinders This field contains the number of translated cylinders in the default translation mode. This value will be the same as the number of cylinders. The contents of this field are right justified and padded with spaces (20h). 6.1.5.9 6.1.5.3 Number of Unformatted Bytes per Track This field contains the number of unformatted bytes per translated track in the default translation mode. This field defines the buffer capability with t h e 0002h meaning a dual ported multi-sector buffer capable of simultaneous data transfers to or from the host and the CompactFlash Memory Card. 6.1.5.10 Number of Unformatted Bytes per Sector Buffer Size This field defines the buffer capacity of 2 sectors or 1 kilobyte of SRAM. 6.1.5.11 6.1.5.5 Buffer Type Default Number of Heads This field contains the number of translated heads in the default translation mode. 6.1.5.4 Memory Card Serial Number ECC Count This field defines the number of ECC bytes used on each sector in the Read and Write Long commands. This field contains the number of unformatted bytes per sector in the default translation mode. 6.1.5.12 6.1.5.6 Default Number of Sectors per Track Firmware Revision This field contains the revision of the firmware for this product. This field contains the number of sectors per track in the default translation mode. 6.1.5.13 Model Number This field contains the model number for this product and is left justified and padded with spaces (20h). 64 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.5.14 Read/Write Multiple Sector Count This field contains the maximum number of sectors that can be read or written per interrupt using t h e Read Multiple or Write Multiple commands. 6.1.5.21 This field contains the product of the current cylinders times heads times sectors. 6.1.5.22 6.1.5.15 Capabilities This field indicates this product will not support DMA Data transfers but does support LBA mode. 6.1.5.17 PIO Data Transfer Cycle Timing Mode This field defines the mode for PIO data transfer. 6.1.5.18 DMA Data Transfer Cycle Timing Mode This field states this product doesnOt support any DMA data transfer mode. 6.1.5.19 Multiple Sector Setting Double Word Support This field indicates this product will not support double word transfers. 6.1.5.16 Current Capacity This field contains a validity flag in the odd byte and the current number of sectors that can be transferred per interrupt for R/W Multiple in t h e even byte. The odd byte is always 01H which indicates that the even byte is always valid. The even byte value depends on the value set by the Set Multiple command. The even byte of this word by default contains a 00H which indicates that R/W Multiple commands are not valid. The only other value returned by the CompactFlash Memory Card in the even byte is a 01H value which indicates that 1 sector per interrupt can be transferred in R/W Multiple mode. 6.1.5.23 Total Sectors Addressable in LBA Mode This field contains the number of sectors addressable for the CompactFlash Memory Card in LBA mode only. Translation Parameters Valid This field contains the value 0001h indicating that words 54 to 58 are valid and reflect t h e current number of cylinders, heads and sectors. 6.1.5.20 Current Number of Cylinders, Heads, Sectors/Track These fields contains the current number of user addressable Cylinders, Heads, and Sectors/Track in the current translation mode. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 65 CompactFlash Memory Card Product Manual 6.1.6 Idle - 97H, E3H Bit -> 7 6 5 4 Command (7) 3 2 0 E3H or 97H C/D/H (6) X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) Timer Count (5 msec increments) Feature (1) X This command causes the CompactFlash Memory Card to set BSY, enter the Idle (Read) mode, clear BSY and generate an interrupt. If the sector count is non-zero, it is interpreted as a timer count with each count being 5 milliseconds and the automatic 6.1.7 1 power down mode is enabled. If the sector count is zero, the automatic power down mode is disabled. Note that this time base (5 msec) is different from the ATA specification. Idle Immediate - 95H, E1H Bit -> 7 6 Command (7) C/D/H (6) 5 4 3 2 1 0 E1H or 95H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command causes the CompactFlash Memory Card to set BSY, enter the Idle (Read) mode, clear BSY and generate an interrupt. 66 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.8 Initialize Drive Parameters - 91H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 0 91H X 0 X Drive Max Head (no. of heads-1) Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) Number of Sectors Feature (1) X This command enables the host to set the number of sectors per track and the number of heads per cylinder. Only the Sector Count and t h e Card/Drive/Head registers are used by this command. 6.1.9 1 Note: SanDisk recommends NOT using this command in any system because DOS determines the offset to the Boot Record based on the number of heads and sectors per track. If a CompactFlash Memory Card is "Formatted" with one head and sector per track value, the same CompactFlash Card will not operate correctly with DOS configured with another heads and sectors per track value. Read Buffer - E4H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 E4H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X The Read Buffer command enables the host to read the current contents of the CompactFlash Memory CardOs sector buffer. This command has the same protocol as the Read Sector(s) command. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 67 CompactFlash Memory Card Product Manual 6.1.10 Read Multiple - C4H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 1 0 C4H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X Note: The current revision of the CompactFlash Memory Card only supports a block count of 1 as indicated in the Identify Drive Information command. This command is provided for compatibility with future products which may support a larger block count. The Read Multiple command performs similarly to the Read Sectors command. Interrupts are not generated on every sector, but on the transfer of a block which contains the number of sectors defined by a Set Multiple command. Command execution is identical to the Read Sectors operation except that the number of sectors defined by a Set Multiple command is transferred without intervening interrupts. DRQ qualification of the transfer is required only at the start of t h e data block, not on each sector. The block count of sectors to be transferred without intervening interrupts is programmed by the Set Multiple Mode command, which must be executed prior to the Read Multiple command. When t h e Read Multiple command is issued, the Sector Count Register contains the number of sectors (not the number of blocks or the block count) requested. If the number of requested sectors is not evenly divisible by the block count, as many full blocks as possible are transferred, followed by a final, partial block transfer. The partial block transfer is for n sectors, where n = (sector count) - modulo (block count). If the Read Multiple command is attempted before the Set Multiple Mode command has been executed or when Read Multiple commands are 68 2 disabled, the Read Multiple operation is rejected with an Aborted Command error. Disk errors encountered during Read Multiple commands are posted at the beginning of the block or partial block transfer, but DRQ is still set and the data transfer will take place as it normally would, including transfer of corrupted data, if any. Interrupts are generated when DRQ is set at t h e beginning of each block or partial block. The error reporting is the same as that on a Read Sector(s) Command. This command reads from 1 to 256 sectors as specified in the Sector Count register. A sector count of 0 requests 256 sectors. The transfer begins at the sector specified in the Sector Number Register. At command completion, the Command Block Registers contain the cylinder, head and sector number of the last sector read. If an error occurs, the read terminates at the sector where the error occurred. The Command Block Registers contain the cylinder, head and sector number of the sector where the error occurred. The flawed data is pending in the sector buffer. Subsequent blocks or partial blocks are transferred only if the error was a correctable data error. A l l other errors cause the command to stop after transfer of the block which contained the error. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.11 Read Long Sector - 22H, 23H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 22H or 23H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) X Feature (1) X The Read Long command performs similarly to the Read Sector(s) command except that it returns 516 bytes of data instead of 512 bytes. During a Read Long command, the CompactFlash Memory Card does not check the ECC bytes to determine if there has been a data error. Only single sector read long operations are supported. The transfer consists of 512 bytes of data transferred in word mode followed by 4 bytes of random data transferred in byte mode. Random data is returned instead of ECC bytes because of the nature of the ECC system used. This command has the same protocol as t h e Read Sector(s) command. 6.1.12 Read Sector(s) - 20H, 21H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 20H or 21H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command reads from 1 to 256 sectors as specified in the Sector Count register. A sector count of 0 requests 256 sectors. The transfer begins at the sector specified in the Sector Number Register. When this command is issued and after each sector of data (except the last one) has been read by the host, the CompactFlash Memory Card sets BSY, puts the sector of data in the buffer, sets DRQ, clears BSY, and generates an interrupt. The host then reads the 512 bytes of data from t h e buffer. At command completion, the Command Block Registers contain the cylinder, head and sector number of the last sector read. If an error occurs, the read terminates at the sector where the error occurred. The Command Block Registers contain the cylinder, head, and sector number of the sector where the error occurred. The flawed data is pending in the sector buffer. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 69 CompactFlash Memory Card Product Manual 6.1.13 Read Verify Sector(s) - 40H, 41H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 40H or 41H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command is identical to the Read Sectors command, except that DRQ is never set and no data is transferred to the host. When t h e command is accepted, the CompactFlash Memory Card sets BSY. When the requested sectors have been verified, the CompactFlash Memory Card clears BSY and generates an interrupt. Upon command completion, the Command Block Registers contain t h e cylinder, head, and sector number of the last sector verified. If an error occurs, the verify terminates at t h e sector where the error occurs. The Command Block Registers contain the cylinder, head and sector number of the sector where the error occurred. The Sector Count Register contains the number of sectors not yet verified. 6.1.14 Recalibrate - 1XH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 1 0 1XH 1 LBA 1 Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command is effectively a NOP command to the CompactFlash Memory Card and is provided for compatibility purposes. After this command is executed the Cyl High and Cyl Low as well as t h e 70 2 Head number will be 0 and Sec Num will be 1 i f LBA=0 and 0 if LBA=1 (i.e. the first block in LBA is 0 while CHS mode the sector number starts atE1). SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.15 Request Sense - 03H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 03H 1 X 1 Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command requests an extended error code after a command ends with an error. Table 6-4 defines the valid extended error codes for t h e CompactFlash Memory Card Series product. The extended error code is returned to the host in t h e Error Register. This command must be the next command issued to the CompactFlash Card following the command which returned an error. Table 6-4 Extended Error Codes Extended Error Code Description 00h No Error Detected 01h Self Test OK (No Error) 09h Miscellaneous Error 20h Invalid Command 21h Invalid Address (Requested Head or Sector Invalid) 2Fh Address Overflow (Address Too Large) 35h, 36h Supply or generated Voltage Out of Tolerance 11h Uncorrectable ECC Error 18h Corrected ECC Error 05h, 30-34h, 37h, 3Eh 10h, 14h Self Test or Diagnostic Failed ID Not Found 3Ah Spare Sectors Exhausted 1Fh Data Transfer Error / Aborted Command 0Ch, 38H, 3Bh, 3Ch, 3Fh 03h Corrupted Media Format Write / Erase Failed SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 71 CompactFlash Memory Card Product Manual 6.1.16 Seek - 7XH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 7XH 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) X (LBA 7-0) Sec Cnt (2) X Feature (1) X This command is effectively a NOP command to the CompactFlash Memory Card although it does perform a range check of cylinder and head or LBA address and returns an error if the address is out of range. 6.1.17 Set Features - EFH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 1 0 EFH X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) Config Feature (1) Feature This command is used by the host to establish or select certain features. Table 6-5 defines a l l features that are supported. Please note that t h e 72 2 9AH feature is unique to the CompactFlash Memory Card and are not part of the ATA Specification. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Table 6-5 Features Supported Feature Operation 01H Enable 8 bit data transfer. 55H Disable Read Look Ahead. 66H Disable Power on Reset (POR) establishment of defaults at Soft Reset. 69H Accepted for backward compatibility with the SDP Series but has no impact on the CF Memory Card. 81H Disable 8 bit data transfer. 96H Accepted for backward compatibility with the SDP Series but has no impact on the CF Memory Card. 9AH Set the host current source capability. Allows tradeoff between current drawn and read/write speed. BBH 4 bytes of data apply on Read/Write Long commands. CCH Enable Power on Reset (POR) establishment of defaults at Soft Reset. Features 01H and 81H are used to enable and clear 8 bit data transfer mode. If the 01H feature command is issued, all data transfers will occur on t h e low order D7-D0 data bus and the IOIS16 signal will not be asserted for data register accesses. Features 55H and BBH are the default features for the CompactFlash Memory Card; thus, t h e host does not have to issue this command with these features unless it is necessary for compatibility reasons. The 9AH Feature is a CompactFlash Memory Card unique option that provides a mechanism for the host system to adjust how much current t h e CompactFlash Card will use. The CompactFlash Card reduces the current it draws by reducing its operating frequency. This has the impact of also reducing the performance of the CompactFlash Card. The default for the CompactFlash Card after a power on reset is to operate at the highest performance and therefore the highest current mode. However after a power on, t h e CompactFlash Card will not draw more than its minimum current as long as the host does not issue any command which reads or writes to the flash memory. This allows the host to issue the Set Features command to set the desired power level without exceeding the minimum requirement of the CompactFlash Card. To reduce the current the CompactFlash Memory Card draws, the host issues the Set Features command with the Feature register set to 9AH and the Sector Count register (Config) set to a current value which is equal to 4 mA times the value in the Sector Count register. When this is done, t h e controller will utilize a look-up table to program the controllerOs frequency, microprocessorOs speed and flash clocks with an optimum value to provide the highest performance without exceeding the hostOs current limit. For example, i f a host can supply 75 mA of current to t h e CompactFlash Card, the Sector Count register would be set to 75 divided by 4 (rounded down) or a value of 18. The CompactFlash Card would then automatically reduce its clock frequencies so t h a t it will not draw more than 75 mA (average, a t nominal Vcc and room temperature) of current. I f the host always wanted to operate at the lowest possible current the Sector Count value should be set to 1. The CompactFlash Card will then operate at the lowest possible current (and also the lowest performance). At the completion of this command, the controller will update the Cylinder Low register with t h e controllerOs minimum valid current value (i.e. t h e minimum current with which the CompactFlash Memory Card can operate) and the Cylinder High register with the maximum current it will use (i.e. the maximum current the CompactFlash Card will draw at the highest performance level). The controller will use its minimum value for any Sector Count value which is less than its minimum value. For example, if the Sector Count is set to 4 which is equivalent to 16 mA, the controller will operate at the lowest possible power point but will not reject the command. Similarly t h e controller will use its maximum value for any Sector Count value which is more than t h e maximum current it can use. There is no error associated with the 9AH feature. Features 66H and CCH can be used to enable and disable whether the Power On Reset (POR) Defaults will be set when a soft reset occurs. The default setting is to revert to the POR defaults when a soft reset occurs. POR defaults the number of heads and sectors along with 16 bit data transfers and the read/write multiple block count. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 73 CompactFlash Memory Card Product Manual 6.1.18 Set Multiple Mode - C6H Bit -> 7 6 5 4 3 Command (7) X Drive 0 X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) Sector Count Feature (1) X This command enables the CompactFlash Card to perform Read and Write Multiple operations and establishes the block count for these commands. The Sector Count Register is loaded with t h e number of sectors per block. The current version of the CompactFlash Card supports only a block size of 1 sector per block. Future versions may support larger block sizes. Upon receipt of the command, the CompactFlash Card sets BSY to 1 and checks the Sector Count Register. loaded for all subsequent Read Multiple and Write Multiple commands and execution of those commands is enabled. If a block count is not supported, an Aborted Command error is posted, and Read Multiple and Write Multiple commands are disabled. If the Sector Count Register contains 0 when the command is issued, Read and Write Multiple commands are disabled. At power on, or after a hardware or (unless disabled by a Set Feature command) software reset, the default mode is Read and Write Multiple disabled. If the Sector Count Register contains a valid value and the block count is supported, the value is Set Sleep Mode- 99H, E6H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 E6H or 99H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command causes the CompactFlash Memory Card to set BSY, enter the Sleep mode, clear BSY and generate an interrupt. Recovery from sleep mode is accomplished by simply issuing another command (a reset is permitted but not required). Sleep mode is also entered when internal timers 74 1 C6H C/D/H (6) 6.1.19 2 expire so the host does not need to issue this command except when it wishes to enter Sleep mode immediately. The default value for t h e read to sleep timer is 5 milliseconds. Note t h a t this time base (5 msec) is different from the ATA Specification. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.20 Standby - 96H, E2H Bit -> 7 6 5 4 Command (7) 3 2 1 0 E2H or 96H C/D/H (6) X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command causes the CompactFlash Memory Card to set BSY, enter the Sleep mode (which corresponds to the ATA OStandbyO Mode), clear BSY and return the interrupt immediately. Recovery from sleep mode is accomplished by simply issuing another command (a reset is not required). 6.1.21 Standby Immediate - 94H, E0H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 E0H or 94H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X This command causes the CompactFlash Memory Card to set BSY, enter the Sleep mode (which corresponds to the ATA OStandbyO Mode), clear BSY and return the interrupt immediately. Recovery from sleep mode is accomplished by simply issuing another command (a reset is not required). SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 75 CompactFlash Memory Card Product Manual 6.1.22 Translate Sector - 87H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 87H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) X Feature (1) X This command allows the host a method of determining the exact number of times a user sector has been erased and programmed. The controller responds with a 512 byte buffer of information on the desired cylinder, head and sector with t h e actual Logical Address along with the Hot Count for that sector. Table 6-6 represents t h e information in the buffer. Please note that this command is unique to the SanDisk CompactFlash Memory Card. Table 6-6 Translate Sector Information Address 00h-01h Cylinder MSB (00), Cylinder LSB (01) 02h Head 03h Sector 04h-06h LBA MSB (04) - LSB (06) 07h-12h Reserved 13h Erased Flag (FFh) = Erased 00h = Not Erased 14h - 17h Reserved 18h-1Ah Hot Count MSB (18) - LSB (1A) 1Bh-1FFh 76 Information Reserved SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.23 Wear Level - F5H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 F5H X X X Drive Flag Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) Completion Status Feature (1) X This command is effectively a NOP command and only implemented for backward compatability with earlier SanDisk SDP series products. The Sector Count Register will always be returned with an 00H indicating Wear Level is not needed. 6.1.24 Write Buffer - E8H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 E8H X Drive X Cyl High (5) X Cyl Low (4) X Sec Num (3) X Sec Cnt (2) X Feature (1) X The Write Buffer command enables the host to overwrite contents of the CompactFlash Memory CardOs sector buffer with any data pattern desired. This command has the same protocol as the Write Sector(s) command and transfers 512 bytes. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 77 CompactFlash Memory Card Product Manual 6.1.25 Write Long Sector - 32H, 33H Bit -> 7 6 5 4 Command (7) C/D/H (6) 3 2 1 0 32H or 33H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) X Feature (1) X This command is provided for compatibility purposes and is similar to the Write Sector(s) command except that it writes 516 bytes instead of 512 bytes. Only single sector Write Long operations are supported. The transfer consists of 512 bytes of data transferred in word mode followed by 4 bytes of ECC transferred in byte mode. Because of the unique nature of the solidstate CompactFlash Memory Card, the four bytes of ECC transferred by the host cannot be used by the CompactFlash Card. The CompactFlash Card discards these four bytes and writes the sector with valid ECC fields. This command has t h e same protocol as the Write Sector(s) command. 6.1.26 Write Multiple Command - C5H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) X LBA X Drive 0 Head Cylinder High Cyl Low (4) Cylinder Low Sec Num (3) Sector Number Sec Cnt (2) Sector Count Feature (1) X The current revision of the CompactFlash Memory Card only supports a block count of 1 as indicated in the Identify Drive Command information. This command is provided for compatibility with future products which may support a larger block count. This command is similar to the Write Sectors command. The CompactFlash Memory Card sets BSY within 400 nsec of accepting the command. Interrupts are not presented on each sector but on the transfer of a block which contains the number of sectors defined by Set Multiple. Command 78 1 C5H Cyl High (5) Note: 2 execution is identical to the Write Sectors operation except that the number of sectors defined by the Set Multiple command is transferred without intervening interrupts. DRQ qualification of the transfer is required only at the start of the data block, not on each sector. The block count of sectors to be transferred without intervening interrupts is programmed by the Set Multiple Mode command, which must be executed prior to the Write Multiple command. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual When the Write Multiple command is issued, t h e Sector Count Register contains the number of sectors (not the number of blocks or the block count) requested. If the number of requested sectors is not evenly divisible by the sector/block, as many full blocks as possible are transferred, followed by a final, partial block transfer. The partial block transfer is for n sectors, where: n = remainder (sector count/block count). If the Write Multiple command is attempted before the Set Multiple Mode command has been executed or when Write Multiple commands are disabled, the Write Multiple operation will be rejected with an aborted command error. Errors encountered during Write Multiple commands are posted after the attempted writes of the block or partial block transferred. The Write command ends with the sector in error, even if it is in the middle of a block. Subsequent blocks are not transferred in the event of an error. Interrupts are generated when DRQ is set at t h e beginning of each block or partial block. The Command Block Registers contain t h e cylinder, head and sector number of the sector where the error occurred and the Sector Count Register contains the residual number of sectors that need to be transferred for successful completion of the command e.g. each block has 4 sectors, a request for 8 sectors is issued and an error occurs on the third sector. The Sector Count Register contains 6 and the address is that of t h e third sector. 6.1.27 Write Multiple without Erase - CDH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 CDH X LBA X Drive Head Cyl High (5) Cylinder High Cyl Low (4) Cylinder Low Sec Num (3) Sector Number Sec Cnt (2) Sector Count Feature (1) X This command is similar to the Write Multiple command with the exception that an implied erase before write operation is not performed. The sectors should be pre-erased with the Erase Sector(s) command before this command is issued. Refer to section 1.8.5 Using the Erase Sector and Write without Erase Commands and to section 6.1.29 Write Sector(s) Without Erase - 38H for an expanded definition of the Write Sector(s) without Erase command. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 79 CompactFlash Memory Card Product Manual 6.1.28 Write Sector(s) - 30H, 31H Bit -> 7 6 5 4 Command (7) C/D/H (6) 2 1 0 30H or 31H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command writes from 1 to 256 sectors as specified in the Sector Count Register. A sector count of zero requests 256 sectors. The transfer begins at the sector specified in the Sector Number Register. When this command is accepted, t h e CompactFlash Memory Card sets BSY, then sets DRQ and clears BSY, then waits for the host to fill the sector buffer with the data to be written. No interrupt is generated to start the first buffer fill operation. No data should be transferred by the host until BSY has been cleared by the host. For multiple sectors, after the first sector of data is in the buffer, BSY will be set and DRQ will be cleared. After the next buffer is ready for data, 80 3 BSY is cleared, DRQ is set and an interrupt is generated. When the final sector of data is transferred, BSY is set and DRQ is cleared. It will remain in this state until the command is completed at which time BSY is cleared and an interrupt is generated. If an error occurs during a write of more than one sector, writing terminates at the sector where t h e error occurs. The Command Block Registers contain the cylinder, head and sector number of the sector where the error occurred. The host may then read the command block to determine what error has occurred, and on which sector. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.1.29 Write Sector(s) without Erase - 38H Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 2 1 0 38H 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command is similar to the Write Sector(s) command with the exception that an implied erase before write operation is not performed. This command has the same protocol as the Write Sector(s) command. The sectors should be preerased with the Erase Sector(s) command before this command is issued. If the sector is not preerased with the Erase Sector(s) command, a normal write sector operation will occur. This command is much faster than a Write Sector(s) command if the sector is pre-erased. The overall performance of the combined Erase Sector(s) command along with the Write Sector(s) without Erase command is less than the normal Write Sector(s) command but has the advantage of splitting up the overall time so the write only portion is more than two times the transfer rate of the normal Write Sector(s) command. Refer to section 1.8.5 Using the Erase Sector and W r i t e without Erase Commands for an expanded definition of these commands. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 81 CompactFlash Memory Card Product Manual 6.1.30 Write Verify Sector(s) - 3CH Bit -> 7 6 5 4 3 Command (7) C/D/H (6) 1 0 3CH 1 LBA 1 Drive Head (LBA 27-24) Cyl High (5) Cylinder High (LBA 23-16) Cyl Low (4) Cylinder Low (LBA 15-8) Sec Num (3) Sector Number (LBA 7-0) Sec Cnt (2) Sector Count Feature (1) X This command writes from 1 to 256 sectors as specified in the Sector Count Register. A sector count of zero requests 256 sectors. The transfer begins at the sector specified in the Sector Number Register. When this command is accepted, t h e CompactFlash Memory Card sets BSY, then sets DRQ and clears BSY, then waits for the host to fill the sector buffer with the data to be written. No interrupt is generated to start the first buffer fill operation. No data should be transferred by the host until BSY has been cleared by the host. For multiple sectors, after the first sector of data is in the buffer, BSY will be set and DRQ will be cleared. After the next buffer is ready for data, 82 2 BSY is cleared, DRQ is set and an interrupt is generated. When the final sector of data is transferred, BSY is set and DRQ is cleared. It will remain in this state until the command is completed at which time BSY is cleared and an interrupt is generated. If an error occurs during a write of more than one sector, writing terminates at the sector where t h e error occurs. The Command Block Registers contain the cylinder, head and sector number of the sector where the error occurred. The host may then read the command block to determine what error has occurred, and on which sector. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 6.2 Error Posting The following table summarizes the valid status and error value for all the ATA Command set. Table 6-7 Error and Status Register Error Register Command BBK UNC IDNF Check Power Mode Status Register ABRT AMNF DRDY V V Execute Drive Diagnostic* Erase Sector(s) DWF DSC V V V V V V V Format Track CORR ERR V V V V V V V V V V V V V V Identify Drive V V V V V Idle V V V V V Idle Immediate V V V V V V V V Initialize Drive Parameters V Read Buffer V Read Multiple V Read Long Sector V Read Sector(s) V Read Verify Sectors V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V Recalibrate V V Request Sense V V V V V V V Set Features V V V V V Set Multiple Mode V V V V V Set Sleep Mode V V V V V Stand By V V V V V Stand By Immediate V V V V V Seek V Translate Sector V Wear Level V V V V V V V V V V V V V V V V V V V V Write Buffer V Write Long Sector V V V V V V V V Write Multiple V V V V V V V V Write Multiple w/o Erase V V V V V V V V Write Sector(s) V V V V V V V V Write Sector(s) w/o Erase V V V V V V V V Write Verify Sector(s) V V V V V V V V V V V V Invalid Command Code V = valid on this command V * See Table 6-2 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 83 CompactFlash Memory Card Product Manual 84 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual 7.0 CIS Description This section describes the Card Information Structure (CIS) for the CompactFlash Memory Card. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 85 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 0 CISTPL_DEVICE Description of Contents CIS Function Device Info Tuple Tuple Code Link is 4 bytes Link to next tuple I/O Device, No WPS, ext speed Device ID, WPS, Speed 700 nsec if no wait Extended Speed 2 Kilobytes of Address Space Device Size 000h 01h 002h 04h 004h DFh Dev ID Type Dh = I/O 006h 72h X 008h 01h 00Ah FFh List End Marker End of Devices End Marker 00Ch 1Ch CISTPL_DEVICE_OC Other Conditions Info Tuple Tuple Code 00Eh 04h Link is 4 bytes Link to next tuple 010h 03h Conditions: 3V operation is allowed, and WAIT is used 3 Volts Operation, Wait Function I/O Device, No WPS, Speed is 250 nsec with Wait Device ID, WPS, Speed 2Kilobytes of Address Space Device Size W 1 Spd Mantis Eh == 7.0 Speed 7h = ext Spd Expo 2h=100 nsec 1x 2K units Reserved 0 3 W 0 1 012h D9h Dev ID Type Dh = I/O 014h 01h 1x 016h FFh List End Marker End of Devices End Marker 018h 18h CISTPL_JEDEC_C JEDEC ID Common Mem Tuple Code 01Ah 02h Link is 2 bytes Link Length 01Ch DFh PCMCIA JEDEC Manufacturer's ID First Byte of JEDEC ID for SanDisk PC Card-ATA 12V Byte 1, JEDEC ID of Device 1 (0-2K) 01Eh 01h PCMCIA Code for PC Card-ATA No Vpp Required Second Byte of JEDEC ID Byte 2, JEDEC ID 020h 20h CISTPL_MANFID Manufacturer's ID Tuple Tuple Code 022h 04h Link is 4 bytes Link Length 024h 45h Low Byte of PCMCIA Manufacturer's Code SanDisk JEDEC Manufacturer's ID Low Byte of PCMCIA Mfg ID 026h 00h High Byte of PCMCIA Manufacturer's Code Code of 0 because other byte is JEDEC 1 byte Manufacturer's ID High Byte of PCMCIA Mfg ID 028h 01h Low Byte of Product Code SanDisk Code for SDP Series Low Byte Product Code 02Ah 04h High Byte of Product Code SanDisk Code for PC CARD ATA High Byte Product Code 86 W Speed 1 01h=250ns ec 2K units SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 CISTPL_VER_1 0 Description of Contents CIS Function Level 1 version / product info Tuple Code Link to next tuple is 23 bytes Link Length 02Ch 15h 02Eh 17h 030h 04h TPPLV1_MAJOR PCMCIA 2.0 /JEIDA 4.1 Major Version 032h 01h TPPLV1_MINOR PCMCIA 2.0 /JEIDA 4.1 Minor Version 034h 53h ASCII Manufacturer String 'S' String 1 036h 75h 'u' 038h 6Eh 'n' 03Ah 44h 'D' 03Ch 69h 'i' 03Eh 73h 's' 040h 6Bh 'k' 042h 00h End of Manufacturer String Null terminator 044h 53h ASCII Product Name String 'S' 046h 44h 'D' 048h 50h 'P' 04Ah 00h 04Ch 35h '5' 04Eh 2Fh '/' 050h 33h '3' 052h 20h '' 054h 30h 056h 2Eh '.' 058h 36h '6' 05Ah 00h End of CIS Revision Number Null terminator 05Ch FFh End of List Marker FFh List terminator End of Product Name String SanDisk Card CIS Revision Number Info String 2 Null terminator Info String 3 '0' SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION No Info String 4 87 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 0 Description of Contents CIS Function 05Eh 80h CISTPL_VEND_SPECIF_80 SanDisk Parameters Tuple Tuple Code 060h 03h (Field Bytes 3-4 taken as 0) Link length is 3 byte Link to next tuple and length of info in this tuple 062h 14h 064h 08h 066h 00h 068h 21h 06Ah 02h 06Ch 04h 06Eh 01h W 12 NI PP P D N A R I A R SP I R 0 0 0 1 0 1 0 0 R R R R E T P R T R8 A R 0 0 0 0 1 0 0 0 No Wear Level & NO Vpp W:No Wear Level 12:Vpp Not used on Write NI:-INPACK connected PP:Programmable Power PDNA:Pwr Down Not Abort-Cmd RIA:RBsy, ATBsy connected RIR:RBsy Inhibited at Reset SP:No Security Present This definition applies only to cards with Manufacturer's ID tuple 1st 3 bytes 45 00 01. R8:8 bit ROM present TAR:Temp Bsy on AT Reset TPR:Temp Bsy on PCMCIA -Reset E:Erase Ahead Available R:Reserved, 0 for now This definition applies only to card with Manufacturer's ID tuple 1st 3 bytes 45 00 01. SanDisk Fields, 1 to 4 bytes limited by link length. SanDisk Fields, 1 to 4 bytes limited by link length. For Specific platform use Only CISTPL_FUNCID Function Type Code R R R R R R R P 0 0 0 0 0 0 0 1 Tuple Code Link length is 2 bytes Link to next tuple Disk Function Function Code Attempt installation at Post P:Install at POST R:Reserved(0) 070h 22h 072h 02h 074h 01h Disk Function Extension Tuple Type Extension tuple describes the Extension Tuple Type for Interface Protocol Disk 076h 01h Interface Type Code PC Card-ATA Interface 88 CISTPL_FUNCE Function ID Tuple Function Extension Tuple Tuple Code Link length is 2 bytes Link to next tuple Extension Info SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 078h 22h 07Ah 03h 07Ch 02h 07Eh 0Ch 080h 0Fh 6 5 4 3 2 1 0 CISTPL_FUNCE Description of Contents CIS Function Function Extension tuple Tuple Code This tuple has 3 info bytes Link Length Disk Function Extension Tuple Type Basic PCMCIA-ATA Extension tuple Extension Tuple Type for Disk R R R R U S V Basic ATA Option Parameters 0 0 0 0 1 1 0 No Vpp, Silicon Drive with Unique Manufacturer / Serial Number combined string V=0:No Vpp Required V=1:Vpp on Modify Media V=2:Vpp on any operation V=3:Vpp continuous S:Silicon, else Rotating U:ID Drive Mfg/SN Unique R I E 0 0 0 Extended ATA Option N P3 P2 P1 P0 All power down modes and Parameters power commands are not 0 1 1 1 1 needed to minimize power. P0:Sleep Mode Supported P1:Standby Mode Supported P2:Idle Mode Supported P3:Drive Auto Power Control N:Some Config Excludes 3X7 E:Index Bit is Emulated I:Twin -IOis16 Data Reg Only 082h 1Ah CISTPL_CONF Configuration Tuple Tuple Code 084h 05h Link Length is 5 bytes Link to next tuple 086h 01h RFS RMS RAS 00 00 01 Size of fields byte (TPCC_SZ) Size of Reserved Field is 0 bytes, Size of Register Mask is 1 Byte, Size of Config Base Address is 2 bytes RFS:Bytes in Reserved Field RMS:Bytes in Reg Mask-1 RAS:Bytes in Base Addr-1 088h 07h TPCC_LAST Entry with Config Index of 07h is final entry in table Last entry of configuration table 08Ah 00h TPCC_RADR (lsb) Configuration Registers are Location of 08Ch 02h TPCC_RADR (msb) located at 200h in Reg Space. Config Registers 08Eh 0Fh R R R R S P C I TPCC_RMSK 0 0 0 0 1 1 1 1 First 4 Configuration Registers are present I:Configuration Index C:Configuration and Status P:Pin Replacement S:Socket and Copy R:Reserved for future use SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 89 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 0 Description of Contents CIS Function 090h 1Bh CISTPL_CE Configuration Entry Tuple Tuple Code 092h 0Bh Link to next tuple is 11 bytes. Also limits size of this tuple to 13 bytes. Link to next tuple 094h C0h Memory Mapped I/O Configuration Configuration Index for this entry is 0. Interface Byte follows this byte. Default Configuration, so is not dependent on previous Default Configuration. D:Default Configuration I:Interface Byte Follows TPCE_INDX Memory Only Interface(0), Bvd's and wProt not used, Ready/-Busy and Wait for memory cycles active. B:Battery Volt Detects Used P:Write Protect Used R:Ready/-Busy Used W:Wait Used for Memory Cycles TPCE_IF Vcc only Power; No Timing, I/O, or IRQ; 2 Byte Mem Space Length; Misc Entry Present P:Power info type T:Timing info present IO:I/O port info present IR:Interrupt info present MS:Mem space info type M:Misc info byte(s) present TPCE_FS 096h 098h 09Ah C0h A1h 27h I D Configuration Index 1 1 0 W R P B Interface Type 1 1 0 0 0 M MS 1 1 R DI PI 0 0 1 IR IO T P 0 0 1 0 AI SI HV LV NV Nominal Voltage Follows NV:Nominal Voltage LV:Mimimum Voltage 0 0 1 1 1 HB:Maximum Voltage SI:Static Current AI:Average Current PI:Peak Current DI:Power Down Current Power Parameters for Vcc 09Ch 55h X 0 Mantissa Ah = 5.0 Exponent 5h = 1V Vcc Nominal is 5 Volts Vcc Nominal Value 09Eh 4Dh X 0 Mantissa 9h = 4.5 Exponent 5h = 1V Vcc Nominal is 4.5 Volts Vcc Minimum Value 0A0h 5Dh X 0 Mantissa Bh = 5.5 Exponent 5h = 1V Vcc Nominal is 5.5 Volts Vcc Maximum Value 90 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 0A2h 75h X 0 Mantissa Eh = 8.0 0A4h 08h Length in 256 bytes pages (lsb) 0A6h 00h Length in 256 bytes pages (msb) Start at 0 on card TPCE_MS Length MSB 0A8h 21h X R P RO A T TPCE_MI 0 0 1 1 Power-Down, and Twin Card. T:Twin Cards Allowed A:Audio Supported RO:Read Only Mode P:Power Down Supported R:Reserved X:More Misc Fields Bytes 0 3 2 1 0 Exponent 5h = 10 0 Description of Contents CIS Function Max Average Current over 10 Max Average Current msec is 80 mA Length of Mem Space is 2 KB TPCE_MS Length LSB 0AAh 1Bh CISTPL_CE Configuration Entry Tuple Tuple Code 0ACh 06h Link to next tuple is 6 bytes. Also limits size of this tuple to 8 bytes. Link to next tuple 0AEh 00h Memory mapped I/O 3.3V configuration. TPCE_INDX P:Power info type TPCE_FS 0B0h 0B2h 01h 21h I D Configuration Index 0 0 0 M MS 0 0 IR IO T P 0 0 1 0 R DI PI AI SI 0 0 0 1 0B4h B5h X 1 Mantissa 6h = 3.0 0B6h 1Eh X 0 1Eh 0B8h 4Dh X 0 Mantissa 9h = 4.5 0 H LV NV PI:Peak Current TPCE_PD NV:Nominal Operation Supply 0 0 1 Voltage Exponent 5h = 1 Exponent 5h = 10 Nominal Operation Supply Voltage = 3.0V Nominal Operation Supply Voltage +.30 Nominal Operation Supply Voltage Extension Byte Max Average Current over 10 Max Average Current msec is 45mA SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 91 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 0 Description of Contents CIS Function Tuple Code 0BAh 1Bh CISTPL_CE Configuration Entry Tuple 0BCh 0Dh Link to next tuple is 13 bytes. Link to next tuple Also limits size of this tuple to 15 bytes. 0BEh C1h 0C0h 0C2h 0C4h 41h 99h 27h I D Configuration Index 1 1 1 W R P B Interface Type 0 1 0 0 1 M MS 1 0 R DI PI 0 0 1 IR IO T P 1 0 1 1 I/O Mapped Contiguous 16 registers configuration Configuration Index for this entry is 1. Interface Byte follows this byte. Default Configuration, so is not dependent on previous Default Configuration. D:Default Configuration I:Interface Byte Follows TPCE_INDX I/O Interface(1), Bvd's and wProt not used; Ready/-Busy active but Wait not used for memory cycles. B:Battery Volt Detects Used P:Write Protect Used R:Ready/-Busy Used W:Wait Used for Memory Cycles TPCE_IF Vcc Only Power Descriptors; No Timing; I/O and IRQ present; No Mem Space; Misc Entry Present P:Power info type T:Timing info present IO:I/O port info present IR:Interrupt info present MS:Mem space info type M:Misc info byte(s) present TPCE_FS AI SI HV LV NV Nominal Voltage Follows NV:Nominal Voltage LV:Mimimum Voltage 0 0 1 1 1 HB:Maximum Voltage SI:Static Current AI:Average Current PI:Peak Current DI:Power Down Current Power Parameters for Vcc 0C6h 55h X 0 Mantissa Ah = 5.0 Exponent 5h = 1V Vcc Nominal is 5Volts Vcc Nominal Value 0C8h 4Dh X 0 Mantissa 9h = 4.5 Exponent 5h = 1V Vcc Nominal is 4.5 Volts Vcc Minimum Value 0CAh 5Dh X 0 Mantissa Bh = 5.5 Exponent 5h = 1V Vcc Nominal is 5.5Volts Vcc Maximum Value 92 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a Offset 7 6 0CCh 75h X 0 Mantissa Eh = 8.0 0CEh 64h R S E IO AddeLines 0 1 1 4 0D0h 0D2h 0D4h 0D6h F0h FFh FFh 21h 5 4 3 2 1 0 Description of Contents CIS Function Exponent 5h = 10 Max Average Current over 10 msec is 80 mA Max Average Current Supports both 8 and 16 bit I/O hosts. 4 Address lines and no range so 16 registers and host must do all selection decoding. IO AddrLines:#lines decoded E:Eight bit only hosts supported S:Sixteen bit hosts supported R:Range Follows TPCE_IO IRQ Sharing Logic Active in Card Control & Status Register, Pulse and Level Mode Interrupts supported, Recommended IRQ's any of 0 through 15(F) S:Share Logic Active P:Pulse Mode IRQ Supported L:Level Mode IRQ Supported M:Bit Mask of IRQs Present V:Vendor Unique IRQ B:Bus Error IRQ I:IO Check IRQ N:Non-Maskable IRQ TPCE_IR IRQ Levels to be routed 0 - 15 recommended. TPCE_IR Mask Extension Byte 1 Recommended routing to any "normal, maskable" IRQ. TPCE_IR Mask Extension Byte 2 Power-Down, and Twin Card. T:Twin Cards Allowed A:Audio Supported RO:Read Only Mode P:Power Down Supported R:Reserved X:More Misc Fields Bytes TPCE_MI S P L M V B I N 1 1 1 1 0 0 0 0 7 6 5 4 3 2 1 0 1 1 1 1 1 1 1 1 F E D C B A 9 8 1 1 1 1 1 1 1 1 X R P RO A T 0 0 1 1 0 0 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 93 CompactFlash Memory Card Product Manual Attribute D a t a Offset 7 0D8h 1Bh CISTPL_CE 0DAh 06h 0DCh 01h 0DEh 0E0h 01h 21h 6 5 4 0 Configuration Index 0 0 1 M MS 0 0 IR IO T P 0 0 1 0 R DI PI AI SI HV LV NV 0 0 1 0 X 1 Mantissa 6h = 3.0 0E4h 1Eh X 0 1Eh 0E6h 4Dh X 0 Mantissa 9h = 4.5 0E8h 1Bh CISTPL_CE 0EAh 12h 0ECh C2h 94 1 D B5h 41h 2 I 0E2h 0EEh 3 0 0 0 Description of Contents CIS Function Configuration Entry Tuple Tuple Code Link to next tuple is 6 bytes. Also limits size of this tuple to 8 bytes. Link to next tuple I/O mapped contiguous 16 3.3V configuration TPCE_INDX P:Power info type TPCE_FS PI:Peak Current NV:Nominal Operation Supply Voltage Power Parameters for Vcc Nominal Operation Supply Voltage = 3.0V Nominal Operation Supply Voltage +.30 Nominal Operation Supply Voltage Extension Byte Max Average Current over 10 msec is 45 mA Max Average Current Configuration Entry Tuple Tuple Code Link to next tuple is 18 bytes. Also limits size of this tuple to 20 bytes. Link to next tuple AT Fixed Disk Primary I/O Address Configuration Configuration Index for this entry is 2. Interface Byte follows this byte. Default Configuration TPCE_INDX 1 Exponent 5h = 1 Exponent 5h = 10 I D Configuration Index 1 1 2 W R P B Interface Type 0 1 0 0 1 I/O Interface(1), Bvd's and TPCE_IF wProt not used; Ready/Busy active but Wait not used for memory cycles. B:Battery Volt Detects Used P:Write Protect Used R:Ready/-Busy Used W:Wait Used for Memory Cycles SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute Offset Data 7 0F0h 99h 0F2h 27h 6 5 M MS 1 0 R DI PI 0 0 1 4 3 2 1 0 IR IO T P 1 0 1 1 Description of Contents CIS Function Vcc Only Power Description; No Timing; I/O and IRQ present; No Mem Space; Misc Entry present P:Power info type T:Timing info present IO:I/O port info present IR:Interrupt info present MS:Mem space info type M:Misc info byte(s) present AI SI HV LV NV Nominal Voltage Follows NV:Nominal Voltage LV:Mimimum Voltage 0 0 1 1 1 HB:Maximum Voltage SI:Static Current AI:Average Current PI:Peak Current DI:Power Down Current TPCE_FS Power Parameters for Vcc 0F4h 55h X 0 Mantissa Ah = 5.0 Exponent 5h = 1V Vcc Nominal is 5Volts Vcc Nominal Value 0F6h 4Dh X 0 Mantissa 9h = 4.5 Exponent 5h = 1V Vcc Nominal is 4.5Volts Vcc Minimum Value 0F8h 5Dh X 0 Mantissa Bh = 5.5 Exponent 5h = 1V Vcc Nominal is 5.5Volts Vcc Maximum Value 0FAh 75h X 0 Mantissa Eh = 8.0 Exponent 5h = 10 Max Average Current over 10 Max Average Current msec is 80 mA 0FCh EAh R S E IO AddeLines 1 1 1 Ah = 10 TPCE_IO Supports both 8 and 16 bit I/O hosts. 10 Address lines with range so card will respond only to indicated (1F0-1F7, 3F6-3F7) on A9 through A0 for I/O cycles. IO AddrLines:#lines decoded E:Eight bit only hosts supported S:Sixteen bit hosts supported R:Range Follows SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 95 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 0FEh 61h 6 5 4 LS AS 1 2 3 2 1 N Ranges - 1 1 0 Description of Contents CIS Function Number of Ranges is 2; Size of each address is 2 bytes; Size of each length is 1 byte. AS:Size of Addresses 0:No Address Present 1:1Byte (8 bit) Addresses 2:2Byte (16 bit) Addresses 3:4Byte (32 bit) Addresses LS:Size of length 0:No Lengths Present 1:1Byte (8 bit) Lengths 2:2Byte (16 bit) Lengths 3:4Byte (32 bit) Lengths I/O Range Format Description 100h F0h 1st I/O Base Address (lsb) First I/O Range base is 102h 01h 1st I/O Base Address (msb) 1F0h 104h 07h 1st I/O Range Length - 1 8 bytes total ==> 1F0-1F7h 106h F6h 2nd I/O Base Address (lsb) 2nd I/O Range base is 108h 03h 2nd I/O Base Address (msb) 3F6h 10Ah 01h 2nd I/O Range Length - 1 2 bytes total ==> 3F6-3F7h 10Ch EEh S P L M Recommend IRQ Level 1 1 1 0 Eh = 14 TPCE_IR IRQ Sharing Logic Active in Card Control & Status Register, Pulse and Level Mode Interrupts supported, Recommended IRQ's any of 0 through 15(F) S:Share Logic Active P:Pulse Mode IRQ Supported L:Level Mode IRQ Supported M:Bit Mask of IRQs Present M=0 so bits 3-0 are single level, binary encoded X R P RO A T 0 0 1 1 10Eh 96 21h 0 0 Power-Down, and Twin Card. T:Twin Cards Allowed A:Audio Supported RO:Read Only Mode P:Power Down Supported R:Reserved X:More Misc Fields Bytes I/O Length - 1 I/O Length - 1 TPCE_MI SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a Offset 7 110h 1Bh CISTPL_CE 112h 06h 114h 02h 116h 118h 01h 21h 6 5 4 3 2 1 0 I D Configuration Index 0 0 2 M MS 0 0 IR IO T P 0 0 1 0 R DI PI AI SI HV LV NV 0 0 1 0 11Ah B5h X 1 Mantissa 6h = 3.0 11Ch 1Eh X 0 1Eh 11Eh 4Dh X 0 Mantissa 9h = 4.5 0 0 0 Description of Contents CIS Function Configuration Entry Tuple Tuple Code Link to next tuple is 6 bytes. Also limits size of this tuple to 8 bytes. Link to next tuple AT Fixed Disk Primary I/O 3.3V configuration TPCE_INDX P:Power info type TPCE_FS PI:Peak Current NV:Nominal Operation Supply Voltage Power Parameters for Vcc Nominal Operation Supply Voltage = 3.0V Nominal Operation Supply Voltage +.30 Nominal Operation Supply Voltage Extension Byte Max Average Current over 10 msec is 45mA Max Average Current 1 Exponent 5h = 1 Exponent 5h = 10 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 97 CompactFlash Memory Card Product Manual Attribute D a t a 7 Offset 6 5 4 3 2 1 0 Description of Contents CIS Function 120h 1Bh CISTPL_CE Configuration Entry Tuple 122h 12h Link to next tuple is 18 bytes. Link to next tuple Also limits size of this tuple to 20 bytes. 124h C3h 126h 128h 12Ah 41h 99h 27h I D Configuration Index 1 1 3 W R P B Interface Type 0 1 0 0 1 M MS 1 0 R DI PI 0 0 1 IR IO T P 1 0 1 1 Tuple Code TPCE_INDX AT Fixed Disk Secondary I/O Address Configuration Configuration Index for this entry is 3. Interface Byte follows this byte. Default Configuration TPCE_IF I/O Interface(1), Bvd's and wProt not used; Ready/-Busy active but Wait not used for memory cycles. B:Battery Volt Detects Used P:Write Protect Used R:Ready/-Busy Used W:Wait Used for Memory Cycles Vcc Only Power Descriptors; TPCE_FS No Timing; I/O and IRQ present; No Mem Space; Misc Entry Present. P:Power info type T:Timing info present IO:I/O port info present IR:Interrupt info present MS:Mem space info type M:Misc info byte(s) present AI SI HV LV NV Nominal Voltage Follows NV:Nominal Voltage LV:Mimimum Voltage 0 0 1 1 1 HB:Maximum Voltage SI:Static Current AI:Average Current PI:Peak Current DI:Power Down Current Power Parameters for Vcc 12Ch 55h X 0 Mantissa Ah = 5.0 Exponent 5h = 1V Vcc Nominal is 5Volts Vcc Nominal Value 12Eh 4Dh X 0 Mantissa 9h = 4.5 Exponent 5h = 1V Vcc Nominal is 4.5Volts Vcc Minimum Value 130h 5Dh X 0 Mantissa Bh = 5.5 Exponent 5h = 1V Vcc Nominal is 5.5Volts Vcc Maximum Value 132h 75h X 0 Mantissa Eh = 1.0 Exponent 5h = 10 Max Average Current over 10 Max Average Current msec is 80 mA 98 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION CompactFlash Memory Card Product Manual Attribute D a t a Offset 7 6 5 4 134h R S E IO AddeLines 1 1 1 Ah = 10 136h EAh 61h 3 2 1 0 LS AS N Ranges - 1 1 2 1 Description of Contents CIS Function Supports both 8 and 16 bit I/O hosts. 10 Address lines with range so card will respond only to indicated (170-177, 376-377) on A9 through A0 for I/O cycles. IO AddrLines:#lines decoded E:Eight bit only hosts supported S:Sixteen bit hosts supported R:Range Follows TPCE_IO Number of Ranges is 2; Size of each address is 2 bytes; Size of each length is 1 byte. AS:Size of Addresses 0:No Address Present 1:1Byte (8 bit) Addresses 2:2Byte (16 bit) Addresses 3:4Byte (32 bit) Addresses LS:Size of length 0:No Lengths Present 1:1Byte (8 bit) Lengths 2:2Byte (16 bit) Lengths 3:4Byte (32 bit) Lengths I/O Range Format Description 138h 70h 1st I/O Base Address (lsb) First I/O Range base is 13Ah 01h 1st I/O Base Address (msb) 170h 13Ch 07h 1st I/O Range Length - 1 8 bytes total ==> 170-177h 13Eh 76h 2nd I/O Base Address (lsb) 2nd I/O Range base is 140h 03h 2nd I/O Base Address (msb) 376h 142h 01h 2nd I/O Range Length - 1 2 bytes total ==> 376-377h I/O Length - 1 144h EEh S P L M Recommend IRQ Level TPCE_IR 1 1 1 0 Eh = 14 IRQ Sharing Logic Active in Card Control & Status Register, Pulse and Level Mode Interrupts supported, Recommended IRQ's any of 0 through 15(F) S:Share Logic Active P:Pulse Mode IRQ Supported L:Level Mode IRQ Supported M:Bit Mask of IRQs Present M=0 so bits 3-0 are single level, binary encoded SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION I/O Length - 1 99 CompactFlash Memory Card Product Manual Attribute D a t a Offset 7 6 5 146h X R P RO A T 0 0 1 1 21h 148h 1Bh 14Ah 06h 14Ch 03h 14Eh 150h 01h 21h 4 3 0 2 0 1 0 CISTPL_CE I D Configuration Index 0 0 3 M MS 0 0 IR IO T P 0 0 1 0 0 1 0 0 0 0 CIS Function Power-Down, and Twin Card. T:Twin Cards Allowed A:Audio Supported RO:Read Only Mode P:Power Down Supported R:Reserved X:More Misc Fields Bytes TPCE_MI Configuration Entry Tuple Tuple Code Link to next tuple is 6 bytes. Also limits size of this tuple to 8 bytes. Link to next tuple AT Fixed Disk Secondary I/O TPCE_INDX 3.3V configuration R DI PI AI SI HV LV NV 0 Description of Contents P:Power info type TPCE_FS PI:Peak Current NV:Nominal Operation Supply Voltage Power Parameters for Vcc Nominal Operation Supply Voltage 1 152h B5h X 1 Mantissa 6h = 3.0 Exponent 5h = 1 Nominal Operation Supply Voltage = 3.0V 154h 1Eh X 0 1Eh +.30 Nominal Operation Supply Voltage Extension Byte 156h 4Dh X 0 Mantissa 9h = 4.5 Exponent 5h = 10 Max Average Current over 10 msec is 45mA Max Average Current 158h 1Bh CISTPL_CE Configuration Entry Tuple Tuple Code 15Ah 04h Link to next tuple is 4 bytes. Link to next tuple 15Ch 07h 15Eh 00h I D Configuration Index 0 0 7 M MS IR IO T P 0 0 0 0 0 0 AT Fixed Disk Secondary I/O TPCE_INDX 3.3V configuration P:Power info type TPCE_FS 160h 028h SanDisk Code Reserved 162h 0D3h SanDisk Code Reserved 164h 014h CISTPL_NO_LINK Prevent Scan of Common Memory Tuple Code 166h 000h No Bytes Following Link Length is 0 Bytes Link to next tuple 168h 0FFh End of Tuple Chain End of CIS Tuple Code 100 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Ordering Information and Technical Support SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 101 102 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Ordering Information and Technical Support Ordering Information To order SanDisk products directly from SanDisk, call 408-542-0595. CompactFlash Memory Card CompactFlash Memory Card Evaluation Kit Model SDCFBX-YY-101 The CompactFlash Memory Card Evaluation K i t (Model SDCFEV-01) permits designers to quickly and easily evaluate the CompactFlash Card. Where: X: I Industrial temperature grade (blank) Standard temperature grade YY: 4 4.0 MB 8 8.0 MB 10 10.4 MB 15 15.0 MB 16* 16.0 MB 20 20.0 MB 30 30.0 MB 32* 32.1 MB 40 40.1 MB 48 48.1 MB 64* 64.2 MB 80* 80.2 MB 96* 96.2 MB CompactFlash Type II Model SDCF2B-160* 160.4 MB *Preliminary information based on 128 MB technology. SanDisk ImageMateTM CompactFlash Drive The SanDisk ImageMate is an external parallel port (SDDR-01) or USB (SDDR-05) CompactFlash Card reader/writer for desktop computers. The ImageMate can be used to transfer files between CompactFlash Cards and computers. It is ideal for moving pictures from a digital camera to your desktop computer system. For more information or to order the ImageMate, call 408-542-0595. The CompactFlash Memory Card Evaluation K i t (Model SDCFEV-01) includes the following items: Hardware Evaluation adapter board 4 MB CompactFlash Memory Card CF Adapter (SDCF-03) Card extender IDE-AB7 adapter board 50 position surface mount header with co-planar tails Ejector with right button for 50 position surface mount header 50 position straddle mount header for CF Adapter Software FlashDisk Driver and Utilities 3.5-inch diskette Documentation Read Me First flyer CompactFlash Guide Evaluation Kit UserOs Applications Note: Differences between PC Card ATA and CF Applications Note: Pre-Erase Command Model SDCFEV-01 To order, or for more information call: 408-542-0595 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 103 Ordering Information and Technical Support System Software, Card Reader/Writers and Connectors Compatible with SanDisk CompactFlash Memory Cards Table 1 System Software with SanDisk CompactFlash Memory Card Support Vendor Product Name Telephone Number AMI AMICARDZ 770-263-8181 Award/VMI Cardware 415-968-4433 Databook Card Talk for Databook Chip 508-762-9779 Phoenix Phoenix Card Manager Plus 714-440-8000 SystemSoft Card Soft 508-651-0088 Vadem Socket Services for VG365, VG465, VG468 408-467-2100 Table 2 Card Readers/Writers Compatible with SanDisk CompactFlash Memory Cards Below is a list of PC card reader/writers that are compatible with the SanDisk CompactFlash Memory Card when used with a passive Type II adapter. These reader/writers can be installed in desktop PCs to enable the CompactFlash Memory Card to be used in those systems. The CompactFlash Memory Card will operate in any of these reader/writers when used with a passive Type II adapter. Note: The SanDisk ImageMate, listed below, does not require use of a Type II adapter. Vendor Adtron 104 Country United States Telephone/FAX Number 602-926-9324 FAX 602-926-9359 http://www.adtron.com Product Model Product Type SDDA Adapter for direct IDE-mode operation; 16-bit data interface, BIOS compatible (no drivers); 3.5- or 2.5-inch mount; can replace laptop hard drives. SDDB IDE or ISA connected 8-bit drive; front access. SDDC Industry standard ISA dual-slot adapter, rear entry, cabled to front entry or 100% internal access. SDDL External LPT port drive. SDDM 8-bit PC/104 drive. SDDP 16-bit PC/104 industry standard adapter. SDDR External RS-232 drive. SDDS Dual-slot SCSI bus drive; ATA card appears as removable disk device; compatible with PC, Macintosh and most workstations. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Ordering Information and Technical Support Table 2 Card Readers/Writers Compatible with SanDisk CompactFlash Memory Cards (continued) Vendor Altec CardWize Data Solutions Country Germany United Kingdom Telephone/FAX Number Country Code 49 (0) 511 98381-0 FAX (0) 511 98381-49 Country Code 44 118-947-9475 FAX 118-947-4676 Email pcmcia@cardwize.co.uk Product Model Product Type EasyDrive Triple slot (two Type II or one Type II and one Type III) in 3.5-inch frame; IDE interface. PCBoardCard Dual slot (two Type II or one Type III) on ISA slot card. i-Drive Dual slot (two Type II or one Type III) in a 3.5inch frame; SCSI-2 interface. PC/104 Drive Dual slot (two Type II or one Type III) for PC/104 system bus. MiniWizard 1R WIZ/001 ISA adapter with one rear access slot. MiniWizard 2R WIZ/006 ISA adapter with two rear mounted slots. CardWizard 1F1R WIZ/101 ISA adapter with one FDD bay mounted slot and one rear access slot. CardWizard 2F WIZ/106 ISA adapter with two FDD bay mounted slots. CardWizard EXT WIZ/107 ISA adapter with external slot housed in a robust metal case. CardWizard IP54 WIZ/108 ISA adapter with one slot IP54 sealed and one rear access slot. ISA adapter with one slot via the standard CardWizard Bezel WIZ/109 CardWize bezel and one rear access slot. PC104 Wizard 1 WIZ/201 PC104 bus adapter with one slot on board. PC104 Wizard 1+H WIZ/202 PC104 bus adapter with one slot on boardand headers for remote access slot two. PC104 Wizard PC104 bus adapter with two stacking slots. Stack WIZ/211 PC104 Wizard PC104 bus adapter with one PC104 slot and Bezel WIZ/221 one bezel mounted slot. PC104Wizard FDD WIZ/231 PC104 bus adapter with one PC104 slot and one FDD bay mounted slot. PC104 Wizard IP54 WIZ/241 PC104 bus adapter with one PC104 slot and I slot IP54 sealed. CardMaestro 3.5" MAE/000 IDE adapter for direct IDE mode 3.5" & 5.25" FDD bay mounted. CardMaestro 3.5" PCB MAE/050 IDE adapter PCB on a 3.5"HDD foot print. CardMaestro EXT MAE/300 IDE adapter with an external slot. CardMaestro 2.5" MAE/400 IDE adapter on a 2.5" HDD foot print. SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 105 Ordering Information and Technical Support Table 2 Card Readers/Writers Compatible with SanDisk CompactFlash Memory Cards (continued) Vendor Chase/CNF CSM Country Telephone/FAX Number United States 408-778-1160 FAX 408-779-6558 United Kingdom Country Code 44 (0) 1274 841358 FAX (0) 1274 841316 Germany Country Code 49 (0) 711 7796420 FAX (0) 711 7796440 Product Model Product Type CARDport isa ISA adapter with one slot on card and cable to single slot drive bay mounted unit. OmniDrive Single slot (Type III) external unit that connects to Centronics (EPP) port (supports Windows NT, Windows 95, Windows 3.11 and MS-DOS). Professional Drive Single slot (Type III) external unit that connects to Centronics (EPP) port with professional software for binary data access. Dual Front Board ISA adapter with cable to dual slot (one Type III and one Type II) in a 3.5-inch frame. Dual Slot Board ISA adapter with one slot (Type III) on card and cable to single slot (Type III) in a 3.5-inch frame. CIS-I/O Board ISA adapter with one slot (Type III) on card. Greystone United States 408-866-4739 FAX 408-866-8328 CardDock ISA adapter with cable to dual slot drive bay mounted unit. Intermart United States 408-379-0770 FAX 408-379-3666 PCD-15 Japan Country Code 81 3-5489-8301 FAX 3-5489-8310 Dual slot external unit that connects to SCSI-2 port. (Supports Apple Macintosh, UNIX, Risc, Vme and PowerPC platforms.) PCD-10 Single slot external unit that connects to SCSI2 port. Same platform support as PCD-15. PCD-15B Internal configuration of PCD-15 for use as built-in for desktop systems. TDM 650 ThinCard Drive Single slot external unit connected to Parallel Port. TMB 240 ThinCard Drive ISA adapter with cable to single slot internal unit. Karby Corp. United States 716-889-4204 FAX 716-889-2593 Protege United States 714-450-8950 FAX 714-450-8959 ATA/X ISA adapter with single cable to either an internal or external unit. SanDisk United States 408-542-0500 FAX 408-542-0503 http://www.sandisk.com ImageMate CompactFlash Card reader/writer that connects to PC with printer pass through connector. Does not require Type II adapter. 106 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Ordering Information and Technical Support Table 3 CompactFlash Connector Vendors The table below lists vendors that can supply CompactFlash connectors. Vendor Name Telephone Number 3M Company 800-225-5373 Amp Incorporated 800-522-6752 (USA only) 717-986-7777 (outside USA) Hirose Electric Incorporated 805-522-7958 Molex Incorporated 630-969-4550 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 107 Ordering Information and Technical Support Technical Support Services Direct SanDisk Technical Support Call SanDisk Applications Engineering at 408-542-0405 for technical support. SanDisk Worldwide Web Site Internet users can obtain technical support and product information along with SanDisk news and much more from the SanDisk Worldwide Web Site, 24 hours a day, seven days a week. The SanDisk Worldwide Web Site is frequently updated. Visit this site often to obtain the most up-to-date information on SanDisk products and applications. The SanDisk Web Site URL is http://www.sandisk.com. 108 SanDisk CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION SanDisk Sales Offices CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 109 SanDisk Worldwide Sales Offices 110 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION SanDisk Worldwide Sales Offices Americas Europe SanDisk Corporate Headquarters 140 Caspian Court Sunnyvale, CA 94089-9820 408-542-0500 FAX 408-542-0503 http://www.sandisk.com SanDisk Corporation Karlsruher Str. 2C D-30519 Hannover, Germany 011-49-511-8759185 FAX 011-49-511-8759187 Sales Offices Western Region USA 408-542-0730 FAX 408-542-0403 Eastern Region USA & Canada 203-483-4390 FAX 203-483-4399 Central & Southern Region USA 614-760-3700 FAX 614-760-3701 Latin & South America 407-667-4880 FAX 407-667-4834 Southern Europe SanDisk Corporation 4, rue de lOabreuvoir 92415 Courbevoie Cedex, France 011-33-1-4717-6510 FAX 011-33-1-4717-6531 Japan SanDisk K.K. 8F Nisso Bldg. 15 2-17-19 Shin-Yokohama, Kohoku-ku Yokohama 222-0033, Japan 81-45-474-0181 FAX 81-45-474-0371 Asia/Pacific Rim 89 Queensway, Lippo Center Tower II, Suite 2207-9 Admiralty, Hong Kong 852-2712-0501 FAX 852-2712-9385 To order SanDisk products directly from SanDisk, call 408-542-0595. CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 111 SanDisk Worldwide Sales Offices 112 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Appendix CompactFlash Connector Specifications Appendix CompactFlash Connector Specifications This appendix includes specifications for CompactFlash connectors as defined by the CompactFlash Association. See the Ordering Information section of this manual for a list of CompactFlash connector vendors. Table 1 Connector Interface Requirements Category Physical Electrical Performance Item Standard Test Method Housing Material High Temperature Plastic Housing Flammability Rating UL 94V-0 Certification Contact Resistance 40 milliohms maximum, initial EIA-364-23A (w/ bulk) 20 milliohms maximum change, throughout testing Current Rating 0.5 Amperes per contact, without exceeding IEC-512-PT3 30oC temperature rise above ambient Insulation Resistance 1000 Megaohms minimum, initial EIA-364-21A 100 Megaohms minimum, after 1 minute at 500 Vdc Dielectric Withstanding Voltage No shorting during 1 minute at 500 Vac rms, with EIA-364-20A 1 mA maximum current leakage Mechanical Single Socket Holding Force 4.9 N minimum push out at 25 mm/minute EIA-364-29A Performance Single Pin Holding Force 9.8 N minimum push out at 25 mm/minute EIA-364-29A Total Mating Force 28.8 N maximum at 25 mm/minute EIA-364-13A Total Unmating Force 4.9 N minimum and 28.8 N maximum at 25 mm/minute EIA-364-13A Durability 10,000 mating cycles, without exceeding low-level contact EIA-364-09B resistance Environmental Mechanical Shock No discontinuities greater than 100 ns, Test Condition A EIA-364-27A Performance Vibration No discontinuities greater than 100 ns, Test Condition III EIA-364-28A Humidity 10 (24 hour) cycles with connector mated EIA-364-31A o o Thermal Shock -55 C to +85 C, 5 (1 hour) cycles EIA-364-32B Mixed Flowing Gas Environmental Class II for 96 hours with connector unmated EIA-364-65 1.27mm (.050 in.) 24 Equal Spaces x 1.27mm = 30.48mm (1.2 in.) --B-- - - - - 1.27mm 1.27mm (.050 (.050 in.) in.) --A-- 50 x O 0.44 0.02 o 0.05 A S B S Figure 1 50 Position, Two Row Pin Pattern CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 113 Appendix CompactFlash Connector Specifications Pin Insertion 0.94mm (.037 in.) Min. Figure 2 Socket Connector Entry 114 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Appendix CompactFlash Connector Specifications Description Pin Number L 0.10 L1 Max L2 Ref L3 0.10 L4 Power 1, 13, 38 & 50 5.00 [.197] 0.50 [.020] 4.50 [.177] 0.50 [.020] 0.50 - 2.50 [.020 - .098] General All other pins 4.25 [.167] 0.50 [.020] 3.75 [.148] 0.50 [.020] 0.50 - 2.50 [.020 - .098] Detect 25, 26 3.50 [.138] 0.50 [.020] 3.00 [.118] 0.50 [.020] 0.50 - 2.50 [.020 - .098] L 1 L3 2 L4 L1 L2 Pin Socket Notes: 1 Pin/Socket contact area. 2 L4 is the point of first engagement for mating with the socket contacts/housing mounted within the card. Figure 3 Pin and Socket Detail CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 115 Appendix CompactFlash Connector Specifications 3.30mm 0.05 (.130 in.) 35.86mm 0.08 (1.412 in.) 1.27mm Typ (.050 in.) 32.97mm 0.08 (1.298 in.) 1.27mm Typ (.050 in.) 0.51mm 0.03 (.020 in.) 2.69mm 0.05 (.106 in.) 2.70mm Max. (.106 in.) 5.99mm 0.10 (.236 in.) 0.51mm Typ (.020 in.) 3.00mm 0.05 (.118 in.) 1.27mm. Typ (.050 in.) 30.48mm 0.10 (1.200 in.) 1.15mm (.045 in.) 0.64mm (.025 in.) 2 1 2.03mm (.080 in.) 0.89mm Typ (.035 in.) 1.27mm 0.05 Typ (.050 in.) 30.48mm (1.200 in.) Recommended PCB Pattern Figure 4 Straddle Mount CF Card Socket 116 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Appendix CompactFlash Connector Specifications 3.30mm 0.05 (.130 in.) 35.86mm 0.08 (1.412 in.) 1.27mm Typ (.050 in.) 32.97mm 0.08 (1.298 in.) 1.27mm Typ (.050 in.) 0.51mm 0.03 (.020 in.) 2.69mm 0.05 (.106 in.) 2.70mm Max. (.106 in.) 5.99mm 0.10 (.236 in.) 0.25mm Typ (.010 in.) 3.00mm 0.05 (.118 in.) 0.635mm. Typ (.025 in.) 31.11mm (1.225 in.) 1.15mm (.045 in.) 0.64mm (.025 in.) 26 1 0.40mm Typ (.016 in.) 2.03mm (.080 in.) 0.635mmTyp (.025 in.) 31.11mm (1.225 in.) Recommended PCB Pattern Figure 5 Surface Mount CF Card Socket CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 117 Appendix CompactFlash Connector Specifications 43.03mm 0.08 (1.694 in.) 3.5mm 0.08 (.138 in.) 1.4mm 0.05 (.055 in.) 0.79mm 0.05 (.031 in.) Pin 1 Pin 25 Pin 26 Pin 50 2X 0.89mm 0.05 (.035 in.) Figure 6 Pin Connector Opening 110 Min Contact Area 0.50mm 0.10 (.020 in.) 10 - 15 CL Row 0.46mm Max. (.018 in.) O 0.44mm 0.02 (.017 in.) Cross Section Tip Detail Figure 7 Header Pin Detail 118 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Appendix CompactFlash Connector Specifications 47.96mm (1.888 in.) 1.27mm Typ (.050 in.) 2x 1.35mm 0.05 (.053 in.) 45.06mm (1.774 in.) 2x 1.42mm 0.05 (.056 in.) 0.79mm .002 (.031 in.) 1.40mm 0.05 (.055 in.) Pin 1 Pin 13 Pin 26 Pin 38 Pin 25 Pin 50 1.27mm Typ (.050 in.) Pin No. Pin Type Interface Dim A detect 3.50mm (.138 in.) 25, 26 general 4.25mm (.167 in.) all other pins power 5.00mm (.197 in.) 1, 13, 38, 50 43.03mm 0.08 (1.694 in.) 2X 0.89mm 0.05 (.035 in.) 2X 6.73mm 0.08 (.265 in.) 4.19mm 0.08 (.165 in.) A A 11.18mm 0.05 (.440 in.) 6.73mm 0.08 (.265 in.) 2X 3.00mm 0.05 (.118 in.) 1.02mm (.040 in.) 2.92mm (.115 in.) 1.27mm Typ (.050 in.) 7.28mm (.287 in.) A 12.70mm (.500 in.) Pin Length 0.52mm Typ (.020 in.) 3.18mm (.125 in.) 30.48mm (1.200 in.) 0.30mm (.012 in.) 30.48mm (1.200 in.) 2X 6.85mm (.270 in.) Section A--A 1.27mm Typ (.050 in.) 4.24mm (.167 in.) 0.84mm (.033 in.) 1.27mm (.050 in.) 0.52mm Typ (.020 in.) 2.34mm (.092 in.) 2.74mm (.108 in.) 3.81mm (.150 in.) 2X 1.52mm (.060in.) 1.90mm Typ (.075 in.) PCB Solder Pad Pattern Figure 8 Straddle Mount CF Card Adapter Header CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 119 Appendix CompactFlash Connector Specifications 2X o 2.20mm (.087 in.) 40.16mm (1.581 in.) 0.635mm Typ (.0250 in.) Pin Type Interface Dim A detect 3.50mm (.138 in.) 25, 26 general 4.25mm (.167 in.) all other pins power 5.00mm (.197 in.) 1, 13, 38, 50 Pin No. 4.50mm (.177 in.) A 2X 4.00mm (.157 in.) (Optional) 1.00mm (.039 in.) --A-- o1.50mm (.059 in.) 1.00mm (.039 in.) (Optional) A --A-- 2X 2.00mm (.079 in.) (Optional) 1.50mm (.059 in.) 50.6mm (1.99 in.) (Optional) 43.03mm 0.06 (1.694 in.) 1.40mm 0.05 (.055 in.) 1.75mm (.069 in.) 30.48mm Ref (1.200 in.) Pin 1 Pin 26 Pin 25 Pin 50 2.00mm (.079 in.) --A-- 1.27mm Typ (.050 in.) 40.16mm (1.58 in.) .79mm 0.05 (.031 in.) A 2X .89mm 0.05 (.035 in.) 9.5mm 0.13 (.374 in.) 11.0mm (.43 in.) 4.5mm (.18 in.) 2.5mm (.098 in.) 3.50mm 0.08 (.138 in.) 2X 3.00mm (.118 in.) (Optional) 46.13mm (1.816 in.)(Optional) Section A-A 3.50mm (.138 in.) 40.16mm (1.581 in.) See Detail A 3.00mm (.118 in.) 7.55mm (.297 in.) 2X 5.0mm (.197 in.) (Optional) 2.00mm (.079 in.) The End of PC Board 2X o 1.70mm (.067 in.) (Through for locating Boss) 2X o 2.20mm (.087 in.) (Through for M2) 31.11mm (1.225 in.) 0.635mm Typ (.0250 in.) 0.40mm Typ (.016 in.) The Direction of Inserting Card Pin 26 Pin 1 Recommended PCB Solder Pad Pattern Pin 25 Pin 50 Detail A Figure 9 Surface Mount Right Angle CF Card Slot Header 120 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Appendix CompactFlash Connector Specifications 1 25 26 50 0.635mm Typ (.0250 in.) 1.27mm Typ (0.050 in.) Insert Card 30.48mm (1.200 in.) Figure 10 Two Row SMT Host PCB Pattern 31.11mm (1.225 in.) 0.40mm Typ (.016 in.) 0.635mm Typ (.0250 in.) 3.50mm (.138 in.) 26 1 Insert Card 25 50 Figure 11 Single Row SMT Host PCB Pattern 24 25 1 2 50 26 5.72mm Ref (.225 in.) 3X 1.91mm (.075 in.) Insert Card 27 30.48mm (1.200 in.) 49 Figure 12 Right Angle Through Hole Host PCB Pattern CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 121 Appendix CompactFlash Connector Specifications 24 25 1 2 50 26 5.72mm Ref (.225 in.) 3X 1.91mm (.075 in.) 30.48mm (1.200 in.) 27 49 Figure 13 Vertical Through Hole Host PCB Pattern 1.27mm (.050 in.) 1 25 26 50 1.27mm (.050 in.) Insert Card 30.48mm (1.200 in.) Figure 14 Alternate Right Angle Through Hole Host PCB Pattern 122 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION Limited Warranty Limited Warranty I. WARRANTY STATEMENT SanDisk warrants its products to be free of any defects in materials or workmanship that would prevent them from functioning properly for one year from the date of purchase. This express warranty is extended by SanDisk Corporation. II. GENERAL PROVISIONS This warranty sets forth the full extent of SanDiskOs responsibilities regarding the SanDisk FlashDisk. In satisfaction of its obligations hereunder, SanDisk, at its sole option, will either repair, replace or refund the purchase price of the product. NOTWITHSTANDING ANYTHING ELSE IN THIS LIMITED WARRANTY OR OTHERWISE, THE EXPRESS WARRANTIES AND OBLIGATIONS OF SELLER AS SET FORTH IN THIS LIMITED WARRANTY, ARE IN LIEU OF, AND BUYER EXPRESSLY WAIVES ALL OTHER OBLIGATIONS, GUARANTIES AND WARRANTIES OF ANY KIND, WHETHER EXPRESS OR IMPLIED, INCLUDING WITHOUT LIMITATION, ANY IMPLIED WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE OR INFRINGEMENT, TOGETHER WITH ANY LIABILITY OF SELLER UNDER ANY CONTRACT, NEGLIGENCE, STRICT LIABILITY OR OTHER LEGAL OR EQUITABLE THEORY FOR LOSS OF USE, REVENUE, OR PROFIT OR OTHER INCIDENTAL OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION PHYSICAL INJURY OR DEATH, PROPERTY DAMAGE, LOST DATA, OR COSTS OF PROCUREMENT OF SUBSTITUTE GOODS, TECHNOLOGY OR SERVICES. IN NO EVENT SHALL THE SELLER BE LIABLE FOR DAMAGES IN EXCESS OF THE PURCHASE PRICE OF THE PRODUCT, ARISING OUT OF THE USE OR INABILITY TO USE SUCH PRODUCT, TO THE FULL EXTENT SUCH MAY BE DISCLAIMED BY LAW. SanDiskOs products are not warranted to operate without failure. Accordingly, in any use of products in life support systems or other applications where failure could cause injury or loss of life, the products should only be incorporated in systems designed with appropriate redundancy, fault tolerant or back-up features. III. WHAT THIS WARRANTY COVERS For products found to be defective within one year of purchase, SanDisk will have the option of repairing or replacing the defective product, if the following conditions are met: A. A warranty registration card for each defective product was submitted and is on file at SanDisk. If not, a warranty registration card must accompany each returned defective product. This card is included in each productOs original retail package. B. The defective product is returned to SanDisk for failure analysis as soon as possible after the failure occurs. C. An incident card filled out by the user, explaining the conditions of usage and the nature of the failure, accompanies each returned defectiveEproduct. D. No evidence is found of abuse or operation of products not in accordance with the published specifications, or of exceeding storage or maximum ratings or operating conditions. All failing products returned to SanDisk under the provisions of this limited warranty shall be tested to the productOs functional and performance specifications. Upon confirmation of failure, each product will be analyzed, by whatever means necessary, to determine the root cause of failure. If the root cause of failure is found to be not covered by the above provisions, then the product will be returned to the customer with a report indicating why the failure was not covered under the warranty. This warranty does not cover defects, malfunctions, performance failures or damages to the unit resulting from use in other than its normal and customary manner, misuse, accident or neglect; or improper alterations or repairs. SanDisk reserves the right to repair or replace, at its discretion, any product returned by its customers, even if such product is not covered under warranty, but is under no obligation to do so. SanDisk may, at its discretion, ship repaired or rebuilt products identified in the same way as new products, provided such cards meet or exceed the same published specifications as new products. Concurrently, SanDisk also reserves the right to market any products, whether new, repaired, or rebuilt, under different specifications and product designations if such products do not meet the original productOs specifications. CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION 123 Limited Warranty IV. RECEIVING WARRANTY SERVICE According to SanDiskOs warranty procedure, defective product should be returned only with prior authorization from SanDisk Corporation. Please contact SanDiskOs Customer Service department at 408-542-0595 with the following information: product model number and description, serial numbers, nature of defect, conditions of use, proof of purchase and purchase date. If approved, SanDisk will issue a Return Material Authorization or Product Repair Authorization number. Ship the defective product to: SanDisk Corporation Attn: RMA Returns (Reference RMA or PRA #) 140 Caspian Court Sunnyvale, CA 94089 V. STATE LAW RIGHTS SOME STATES DO NOT ALLOW THE EXCLUSION OR LIMITATION OF INCIDENTAL OR CONSEQUENTIAL DAMAGES, OR LIMITATION ON HOW LONG AN IMPLIED WARRANTY LASTS, SO THE ABOVE LIMITATIONS OR EXCLUSIONS MAY NOT APPLY TO YOU. This warranty gives you specific rights and you may also have other rights that vary from state to state. VI. OUT OF WARRANTY REPAIRS Please contact SanDisk Customer Service at 408-542-0595 for the current out of warranty and repair price list. 124 CompactFlash Memory Card Product Manual (c) 1999 SANDISK CORPORATION