Order this document by BU406/D SEMICONDUCTOR TECHNICAL DATA These devices are high voltage, high speed transistors for horizontal deflection output stages of TV's and CRT's. * * * * 7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII v v High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Packaged in Compact JEDEC TO-220AB MAXIMUM RATINGS Rating Symbol BU406 BU407 Unit Collector-Emitter Voltage VCEO 200 150 Vdc Collector-Emitter Voltage VCEV 400 330 Vdc Collector-Base Voltage VCBO 400 330 Vdc Emitter Base Voltage VEBO 6 Vdc Collector Current -- Continuous Peak Repetitive Peak (10 ms) IC 7 10 15 Adc Base Current IB 4 Adc Total Device Dissipation, TC = 25_C Derate above TC = 25_C PD 60 0.48 Watts W/_C TJ, Tstg - 65 to 150 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RJC 2.08 _C/W Thermal Resistance, Junction to Ambient RJA 70 _C/W Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL 275 _C CASE 221A-06 TO-220AB ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 200 150 -- -- -- -- Vdc -- -- -- -- -- -- 5 0.1 1 IEBO -- -- 1 mAdc Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VCE(sat) -- -- 1 Vdc Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VBE(sat) -- -- 1.2 Vdc VEC -- -- 2 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (IC = 100 mAdc, IB = 0) BU406 BU407 Collector Cutoff Current (VCE = Rated VCEV, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) ICES BU406, BU407 mAdc ON CHARACTERISTICS (1) Forward Diode Voltage (IEC = 5 Adc) "D" only (1) Pulse Test: Pulse Width 300 s, Duty Cycle 1%. Volts (continued) REV 2 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit fT 10 -- -- MHz Cob -- 80 -- pF tc -- -- 0.75 s DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) SWITCHING CHARACTERISTICS Inductive Load Crossover Time (VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 H) 100 50 30 TJ = 100C 25C VCE = 5 V 20 10 0.1 2 3 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain 2 IC, COLLECTOR CURRENT (AMP) hFE, DC CURRENT GAIN 70 10 5 7 10 dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 0.1 TC = 25C 2 3 BU407 BU406 5 7 10 50 70 100 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 200 PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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