APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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CR1
VBUS NT C2
0/VBUS
VBUS SENSE
G2
S2
NT C1
Q2
OUT
VBUS OUT
OUT
NTC2
NTC1
0/VBUS
S2
S2
G2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 200 V
Tc = 25°C 175
ID Continuous Drain Current Tc = 80°C 131
IDM Pulsed Drain current 700
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 10 mW
PD Maximum Power Dissipation Tc = 25°C 694 W
IAR Avalanche current (repetitive and non repetitive) 89 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 2500 mJ
VDSS = 200V
RDSon = 10mW max @ Tj = 25°C
ID = 175A @ Tc = 25°C
Application
· AC and DC motor control
· Switched Mode Power Supplies
· Power Factor Correction
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal fo
r
easy PCB mounting
· Low profile
Boost chopper
MOSFET Power Module
APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 375µA 200 V
VGS = 0V,VDS = 200V Tj = 25°C 150
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 750
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 87.5A 10 mW
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 13.7
Coss Output Capacitance 4.36
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.19
nF
Qg Total gate Charge 224
Qgs Gate – Source Charge 86
Qgd Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 150A 94
nC
Td(on) Turn-on Delay Time 28
Tr Rise Time 56
Td(off) Turn-off Delay Time 81
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 150A
RG = 2.5W 99
ns
Eon Turn-on Switching Energy u 926
Eoff Turn-off Switching Energy v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω 910
µJ
Eon Turn-on Switching Energy u 1216
Eoff Turn-off Switching Energy v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 150A, RG = 2.5Ω 1062
µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 120 A
IF = 120A 1.1 1.15
IF = 240A 1.4
VF Diode Forward Voltage
IF = 120A Tj = 125°C 0.9
V
Tj = 25°C 31
trr Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/µs Tj = 125°C 60
ns
Tj = 25°C 120
Qrr Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/µs Tj = 125°C 500
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.18
RthJC Junction to Case Diode 0.46
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 68
kW
B 25/85 T
25 = 298.16 K 4080 K
ú
û
ù
ê
ë
é
÷
÷
ø
ö
ç
ç
è
æ-
=
TT
B
R
RT
11
exp
25
85/25
25
Package outline
T: Thermistor temperature
RT: Thermistor value at T
APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
9V
0
100
200
300
400
500
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
100
200
300
400
23456789
VGS, Gate to Source Voltage (V)
I
D
, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
0 40 80 120 160 200 240
ID, Drain Current (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 87.5A
0
20
40
60
80
100
120
140
160
180
200
25 50 75 100 125 150
TC, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DSS
, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 87.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
DC line
10ms
1ms
100µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited b
y
RDSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=40V
VDS=100V
VDS=160V
0
2
4
6
8
10
12
0 50 100 150 200 250
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=150A
TJ=25°C
APTM20DAM10T
APTM20DAM10T – Rev 2 May, 2004
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Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
90
0 50 100 150 200 250 300
ID, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100
µ
H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0 50 100 150 200 250 300
ID, Drain Current (A)
t
r
and t
f
(ns)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0 50 100 150 200 250 300
ID, Drain Current (A)
E
on
and E
off
(mJ)
VDS=133V
RG=2.5Ω
TJ=125°C
L=100
µ
H
Eon
Eoff
1
1.5
2
2.5
3
0 5 10 15 20
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=133V
ID=150A
TJ=125°C
L=100µH
0
50
100
150
200
250
300
350
20 40 60 80 100 120 140 160
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=2.5Ω
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VSD, Source to Drain Voltage (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
