DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET (R) POWERDI Product Summary RDS(ON) max ID TC = +25C 2.5m @ VGS = -10V -60A 3.5m @ VGS = -4.5V -60A BVDSS -20V Features Description This new generation P-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. Applications Thermally Efficient Package - Cooler Running Applications High Conversion Efficiency Low RDS(ON) - Minimizes On State Losses <1.1mm Package Profile - Ideal for Thin Applications Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data Case: POWERDI5060-8 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) Load Switch Notebook Battery Power Management D POWERDI5060-8 G S D S D S D G D S Pin1 Internal Schematic Top View Bottom View Top View Pin Configuration Ordering Information (Note 4) Part Number DMP22M2UPS-13 Notes: Case POWERDI5060-8 Packaging 2,500 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information POWERDI5060-8 D S D D D D D D P22M2US P2002US YY WW YY WW S S G S S S D = = Manufacturer's Marking P22M2US or P2002US = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) G POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 1 of 7 www.diodes.com May 2015 (c) Diodes Incorporated DMP22M2UPS Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 V -60 -60 A -42 -33.5 A -100 A -60 A -5.6 A Continuous Drain Current, VGS = 10V (Note 5) Steady State (Note 6) t<10s TC = +25C TC = +70C TA = +25C TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Continuous Body Diode Forward Current (Note 5) ID IDM Steady State (Note 6) TC = +25C t<10s TA = +25C IS Avalanche Current, L = 0.1mH IAS -37 A Avalanche Energy, L = 0.1mH EAS 69.8 mJ Symbol Value Units Thermal Characteristics Characteristic Steady State Total Power Dissipation (Note 5) t<10s 2.3 W PD 6.25 Steady State Thermal Resistance, Junction to Ambient (Note 5) t<10s Total Power Dissipation (Note 5) Steady State Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Note: 55 C/W RJA 20 PD 104 W RJC 0.9 C/W TJ, TSTG -55 to +150 C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Package limited. POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 2 of 7 www.diodes.com May 2015 (c) Diodes Incorporated DMP22M2UPS Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition BVDSS -20 -- -- -- -- -10 V A -- -- 100 nA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V -0.5 -- -1.4 V VDS = VGS, ID = -250A -- -- 2.5 -- -- -- -- 3.5 5.0 OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS IGSS Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) Static Drain-Source On-Resistance RDS(ON) VGS = 0V, ID = -250A VGS = -10V, ID = -25A m VGS = -4.5V, ID = -20A VGS = -2.5V, ID = -15A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss -- Coss -- 12826 2547 -- Output Capacitance Reverse Transfer Capacitance Crss -- 1924 -- Gate Resistance RG Total Gate Charge (VGS = -10V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Qg Qg -- -- 4.2 476 -- -- -- 228 -- Qgs -- 24.8 -- Gate-Drain Charge Qgd -- 61.9 -- tD(ON) -- 14.2 -- tR -- -- 35.4 361 -- -- -- 224 -- Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time tD(OFF) tF Turn-Off Fall Time BODY DIODE CHARACTERISTICS pF VDS = -10V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -10V, ID = -20A ns VDD = -10V, VGEN = -4.5V, RGEN = 1, ID = -10A VGS = 0V, IS = -5A -- Diode Forward Voltage VSD -- V tRR -- -0.58 137 -- Reverse Recovery Time (Note 8) -- ns Reverse Recovery Charge (Note 8) Reverse Recovery Fall Time (Note 8) Qrr -- -- 221 39 -- -- nC -- 98 -- ta tb Reverse Recovery Raise Time (Note 8) Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 30.0 30 VGS = -4.5V VDS = -5V VGS = -1.4V 25 ID, DRAIN CURRENT (A) 25.0 ID, DRAIN CURRENT (A) IF = -10A, di/dt = 100A/s ns 20.0 VGS = -2.0V 15.0 VGS = -1.5V VGS = -1.3V 10.0 5.0 20 15 150oC 10 125oC 25oC 5 85oC VGS = -1.2V -55oC 0.0 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 3 of 7 www.diodes.com May 2015 (c) Diodes Incorporated 0.0024 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMP22M2UPS 0.0022 VGS = -2.5V 0.002 0.0018 VGS = -4.5V 0.0016 VGS = -10V 0.0014 2 6 10 14 18 22 26 0.01 0.009 0.008 0.007 0.006 0.005 0.004 0.003 ID = -25A 0.001 ID = -15A 0 0 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 4 6 8 10 12 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = - 4.5V 150oC 0.0022 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 0.0024 0.002 125oC 0.0018 85oC 0.0016 25oC 0.0014 0.0012 -55oC 0.001 0 5 10 15 20 25 VGS = -2.5V, ID = -15A 1.4 VGS = -4.5V, ID = -20A 1.2 VGS = -10V, ID = -25A 1 0.8 0.6 -50 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6 On-Resistance Variation with Temperature ID, DRAIN CURRENT(A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 1 0.0034 0.003 VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE () ID = -20A 0.002 VGS = -2.5V, ID = -15A 0.0026 0.0022 0.0018 VGS = -10V, ID = -25A 0.0014 VGS = -4.5V, ID = -20A 0.001 0.8 ID = -1mA 0.6 ID = -250A 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7 On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE () Figure 8 Gate Theshold Variation vs Ambient Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 4 of 7 www.diodes.com May 2015 (c) Diodes Incorporated DMP22M2UPS 30 100000 25 IS, SOURCE CURRENT (A) CT, JUNCTION CAPACITANCE (pF) f = 1MHz VGS = 0V 20 TA = 150oC 15 10 TA = 125oC TA = 25oC TA = 5 85oC Ciss 10000 Coss Crss TA = -55oC 1000 0 0 0.2 0.4 0.6 0.8 0 1 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 1000 RDS(ON) Limited ID, DRAIN CURRENT (A) VGS (V) 8 VDS = -10V, ID = -20A 6 4 100 PW =1s PW =100ms PW =10ms PW =1ms 10 PW =100s TJ(Max)=150 TC=25 VGS=10V Single Pulse DUT on infinite heatsink 2 PW =10s PW =1s 1 0 0 0.1 50 100 150 200 250 300 350 400 450 500 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area Qg (nC) Figure 11 Gate Charge r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.5 D = 0.7 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJC(t)=r(t) * RJC RJC=0.9oC/W Duty Cycle, D=t1/t2 D = Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 5 of 7 www.diodes.com May 2015 (c) Diodes Incorporated DMP22M2UPS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D D1 0(4x) c x E1 A1 E Seating Plane y e C 1 O1.000 Depth 0.070.030 01(4x) b1(8x) b(8x) DETAIL A e/2 1 L D2 k b2(2x) L4 E2 A M DETAIL A La L1 PowerDI5060-8 (Type K) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 E 1.27BSC k 1.27 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Dimensions Y1 C G G1 X X1 X2 Y Y1 Y2 Y3 Y2 Y3 X1 G1 Y C Value (in mm) 1.270 0.660 0.820 0.610 3.910 4.420 1.270 1.020 3.810 6.610 X (8x) G POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 6 of 7 www.diodes.com May 2015 (c) Diodes Incorporated DMP22M2UPS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP22M2UPS Document number: DS37857 Rev. 2 - 2 7 of 7 www.diodes.com May 2015 (c) Diodes Incorporated