07N9604 - Hitachi - Datasheet.Live

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DMP22M2UPS

Document number: DS37857 Rev. 2 - 2

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DMP22M2UPS

D

S

G

20V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI®

Product Summary

BVDSS

RDS(ON) max

ID

TC = +25°C

-20V

2.5mΩ @ VGS = -10V

-60A

3.5mΩ @ VGS = -4.5V

-60A

Description

This new generation P-Channel Enhancement Mode MOSFET is

designed to minimize RDS(ON) and yet maintain superior switching

performance.

Applications

 Load Switch

 Notebook Battery Power Management

Features

 Thermally Efficient Package – Cooler Running Applications

 High Conversion Efficiency

 Low RDS(ON) – Minimizes On State Losses

 <1.1mm Package Profile – Ideal for Thin Applications

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

 Case: POWERDI5060-8

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Finish - Matte Tin Annealed over Copper Leadframe;

Solderable per MIL-STD-202, Method 208

 Weight: 0.097 grams (Approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

DMP22M2UPS-13

POWERDI5060-8

2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Bottom View

Top View

Pin Configuration

Top View

Internal Schematic

POWERDI5060-8

Pin1

S

D

G

D

S

P2002US

S

G

D

YY

WW

= = Manufacturer’s Marking

P22M2US or P2002US = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 14 = 2014)

WW = Week Code (01 to 53)

Green

P22M2US

S

G

D

YY

WW

POWERDI5060-8

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DMP22M2UPS

Document number: DS37857 Rev. 2 - 2

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DMP22M2UPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current, VGS = 10V (Note 5)

Steady State

(Note 6)

TC = +25°C

TC = +70°C

ID

-60

A

t<10s

TA = +25°C

TA = +70°C

-42

-33.5

A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)

IDM

-100

A

Continuous Body Diode Forward Current (Note 5)

Steady State

(Note 6)

TC = +25°C

IS

-60

A

t<10s

TA = +25°C

-5.6

A

Avalanche Current, L = 0.1mH

IAS

-37

A

Avalanche Energy, L = 0.1mH

EAS

69.8

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady State

PD

2.3

W

t<10s

6.25

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

55

°C/W

t<10s

20

Total Power Dissipation (Note 5)

Steady State

PD

104

W

Thermal Resistance, Junction to Case (Note 5)

RθJC

0.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Package limited.

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DMP22M2UPS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-20

—

V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-10

µA

VDS = -20V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

nA

VGS = 12V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

-0.5

—

-1.4

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

2.5

mΩ

VGS = -10V, ID = -25A

—

3.5

VGS = -4.5V, ID = -20A

—

5.0

VGS = -2.5V, ID = -15A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

12826

—

pF

VDS = -10V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

2547

—

Reverse Transfer Capacitance

Crss

—

1924

—

Gate Resistance

RG

—

4.2

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -10V)

Qg

—

476

—

nC

VDS = -10V, ID = -20A

Total Gate Charge (VGS = -4.5V)

Qg

—

228

—

Gate-Source Charge

Qgs

—

24.8

—

Gate-Drain Charge

Qgd

—

61.9

—

Turn-On Delay Time

tD(ON)

—

14.2

—

ns

VDD = -10V, VGEN = -4.5V,

RGEN = 1Ω, ID = -10A

Turn-On Rise Time

tR

—

35.4

—

Turn-Off Delay Time

tD(OFF)

—

361

—

Turn-Off Fall Time

tF

—

224

—

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

—

-0.58

—

V

VGS = 0V, IS = -5A

Reverse Recovery Time (Note 8)

tRR

—

137

—

ns

IF = -10A, di/dt = 100A/µs

Reverse Recovery Charge (Note 8)

Qrr

—

221

—

nC

Reverse Recovery Fall Time (Note 8)

ta

—

39

—

ns

Reverse Recovery Raise Time (Note 8)

tb

—

98

—

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 0.5 1 1.5 2 2.5 3

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

VGS = -1.2V

VGS = -1.3V

VGS = -1.4V

VGS = -2.0V

VGS = -1.5V

VGS = -4.5V

0

5

10

15

20

25

30

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristic

V

DS

= -5V

-55oC

25oC

85oC

125oC

150oC

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DMP22M2UPS

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DMP22M2UPS

0.0014

0.0016

0.0018

0.002

0.0022

0.0024

2 6 10 14 18 22 26 30

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

ID, DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs. Drain Current

and Gate Voltage

VGS = -2.5V

VGS = -4.5V

VGS = -10V

0

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

0.01

0 2 4 6 8 10 12

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristic

ID = -25A

ID = -15A

ID = -20A

0.001

0.0012

0.0014

0.0016

0.0018

0.002

0.0022

0.0024

0 5 10 15 20 25 30

RDS(ON), DRAIN-SOURCE

ON-RESISTANCE (Ω)

ID, DRAIN CURRENT(A)

Figure 5 Typical On-Resistance vs. Drain Current

and Temperature

VGS = - 4.5V

125oC

150oC

85oC

25oC

-55oC

0.6

0.8

1

1.2

1.4

1.6

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 6 On-Resistance Variation with

Temperature

VGS = -4.5V, ID = -20A

VGS = -2.5V, ID = -15A

VGS = -10V, ID = -25A

0.001

0.0014

0.0018

0.0022

0.0026

0.003

0.0034

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7 On-Resistance Variation with Temperature

VGS = -10V, ID = -25A

VGS = -4.5V, ID = -20A

VGS = -2.5V, ID = -15A

0

0.2

0.4

0.6

0.8

1

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THESHOLD VOLTAGE (V)

TA, AMBIENT TEMPERATURE (℃)

Figure 8 Gate Theshold Variation vs Ambient

Temperature

ID = -1mA

ID = -250µA

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DMP22M2UPS

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DMP22M2UPS

0

5

10

15

20

25

30

0 0.2 0.4 0.6 0.8 1

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

TA = 85oC

TA = -55oC

TA = 25oC

TA = 125oC

TA = 150oC

VGS = 0V

1000

10000

100000

0 4 8 12 16 20

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

f = 1MHz

Ciss

Coss

Crss

0

2

4

6

8

10

050 100 150 200 250 300 350 400 450 500

VGS (V)

Qg (nC)

Figure 11 Gate Charge

VDS = -10V, ID = -20A

1

10

100

1000

0.1 1 10 100

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

TJ(Max)=150

℃

TC=25℃

VGS=10V

Single Pulse

DUT on infinite heatsink

RDS(ON)

Limited

PW =1s

PW =100ms

PW =10ms

PW =1ms

PW =100µs

PW =10µs

PW =1µs

0.001

0.01

0.1

1

1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

RθJC(t)=r(t) * RθJC

RθJC=0.9oC/W

Duty Cycle, D=t1/t2

D = Single Pulse

D = 0.005

D = 0.01

D = 0.02

D = 0.05

D = 0.1

D = 0.3

D = 0.5 D = 0.7

D = 0.9

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DMP22M2UPS

Document number: DS37857 Rev. 2 - 2

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DMP22M2UPS

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

PowerDI5060-8

(Type K)

Dim

Min

Max

Typ

A

0.90

1.10

1.00

A1

0

0.05

0.02

b

0.33

0.51

0.41

b1

0.300

0.366

0.333

b2

0.20

0.35

0.25

c

0.23

0.33

0.277

D

5.15 BSC

D1

4.85

4.95

4.90

D2

-

3.98

E

6.15 BSC

E1

5.75

5.85

5.80

E2

3.56

3.76

3.66

E

1.27BSC

k

-

1.27

L

0.51

0.71

0.61

La

0.51

0.71

0.61

L1

0.05

0.20

0.175

L4

-

0.125

M

3.50

3.71

3.605

x

-

1.400

y

-

1.900

θ

10°

12°

11°

θ1

6°

8°

7°

All Dimensions in mm

Dimensions

Value

(in mm)

C

1.270

G

0.660

G1

0.820

X

0.610

X1

3.910

X2

4.420

Y

1.270

Y1

1.020

Y2

3.810

Y3

6.610

DETAIL A

0(4x)

Seating Plane

A1

c

e

01(4x)

D1

E1

D

E

1

y

x

C

Ø1.000 Depth 0.07±0.030

A

DETAIL A

L

k

M

L1

La

E2

b(8x) e/2

1

b1(8x)

b2(2x)

D2

L4

Y

Y3

Y2

X1

Y1

G1

X2

CX (8x)

G

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DMP22M2UPS

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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