Si APDs (Short-wavelength Enhanced Types) | Dimensional | Effective 2 | Effective Spectral Peak * Photo Quantum Outline Active Area Active Response Sensitivity | Sensitivity Efficiency Type No. (P.46, 47)/ Package Si A Range Wavelength M=1 M=1 Window | ize rea x Ap A=620 nm | A=620 nm | Material (mm) (mm?) | (nm) (nm) (AM) (%) $5343 / ew TO-18 $1.0 0.78 $5344 | u TO-5 $3.0 7.0 200 to 1000 620 0.42 80 $5345 | wu TO-8 $5.0 19.6 *1: Window material, U: UV glass window *2: The range that allows multiplication. *3: Measured with the gain listed in this specification table @ Spectral Response 30 (Typ. Ta=25 C, 1=650 nm) PHOTO SENSITIVITY (AAW) WAVELENGTH (nm) KAPDBOO10EC @ Gain vs. Reverse Voltage (A=650 nm) 104 GAIN g 101 100 130 140 150 REVERSE VOLTAGE (Vv) KAPDBOOTIEB 38 @ Quantum Efficiency vs. Wavelength (Typ. Ta=25 C) 100 80 60 40 QUANTUM EFFICIENCY (%) 20 9 200 400 600 800 1000 WAVELENGTH (nm) KAPOBO023EA @ Terminal Capacitance vs. Reverse Voltage Ta=25 C, f=1 1nF 100 pF 10 pF TERMINAL CAPACITANCE 1 oF o 50 100 150 200 REVERSE VOLTAGE (V) KAPDBOOISER @ Dark Current vs. Reverse Voltage {Typ. Ta=25 C) a TpA 5 100na 2 SSS i se | > 10nA ee wf 3 x A < {nA er glee fl a ee F+ | 10 pA 200 REVERSE VOLTAGE (V) apppoooses @ Excess Noise Factor vs. Gain 10 Ta=25 C, f=10 kHz, B=1 EXCESS NOISE FACTOR KAPDBOO13EA (Unless otherwise noted, Typ. Ta=25 C) T * . * *Q/ : . Breakdown : Tempe- Dark Current 3 Cut-off *$ Terminal 3 Excess 3 Gain | Absolute Maximum Ratings Voltage Ver rature ip Frequency| Capaci- | Noise Operating Storage Ip=100 pA Coefficient! (nA) fc tance | Figure M Temperature Temperature| Type No. (V) of Ver Ri=50 Q Ct x Topr Tstg Typ. Max. (VPC) Typ. | Max. (MHz) (pF} j}A=650 nm)|A=650 nm (C) | (C) 1 10 250 15 $5343 150 200 0.14 20 100 25 120 0.28 50 -20 to +60 | -55 to +100 [$5344 | 300 | 1000 8 | 320 | \s5345 APD Modules The APD modules are high-sensitivity, high-speed O/E converters, consisting of an APD, low-noise amplifier, and bias power supply, inte- grated into a compact case. These modules enable light detection with an excellent S/N ratio several ten times higher than that obtained with PIN photodiodes. These modules are ideally suited for evaluation and production of light detection systems using APDs. FEATURES @ High sensitivity, high S/N ratio, high stability @ Easy handling @ Compact and lightweight @ Low cost @ Suitable for evaluation of APD Effective 2 : . Temperature Active | Cut-off Frequency Photoelectric = Minimum Stability | Supply Feature/Application Type No. Area Sensitivity Detection of Gain Voltage (mm) | Low High (WAV) Limit (25 *C+10 C) Standard Types (for NIR) 4 Peak sensitivity wavelength: 800 nm |C5331 01.5 4kHz 100MHz 4.50x 1045 | 3nWrm.s5 - Evaluation of APD C5331-01 00.2 4kHz 100MHz 7.50x 1045 | 3nWrms* - Spatial light transmission C5331-02 00.5 4kHz 100MHz: 7.50~x 1045 | 3nWr.m.s 5 +2.5 % +5V - Optical rangefinder C5331-03 61.0 4kHz 100 MHz | 6.75 1045 | 3nWr.ms 5 - Optical communication C5331-04 63.0 4kHz 80MHz | 2.30x 104 | 4nWrms - Laser Radar C5331-05 05.0 4kHz 50MHz | 0.75 x 1045 | 5nWr.m.s 5 Standard Types (for short wavelength) 4 Peak sensitivity wavelength: 620 nm |C5331-11 61.0 4kHz 100MHz/ 2.70x 104 | 5nWrms | . Film scanner 1C5331-12 $3.0 4kHz 40MHz | 1.40 x 104 | 11nWrms" 425% +5V - Laser monitoring C5331-13 65.0 4kHz 20MHz | 0.77 10*6 | 10nWr.ms High-sensitivity Types Low-light-level detection _) . C5460 1.5 DC 10MHz | 1.50 1085 800 pWr.m.s 8 - Bar code reader - +2.5 % +12 V - Fluorescence measurement . 5460-01 63.0 DC 100 kHz | 1.50 x 108 5 pWr.m.s 6 - Particle counter High-speed Type Detection of high-speed response light . . : C5658 90.5 1 MHz 1GHz 2.50 1057 | 16nWr.m.s +5.0 % +12 V - OTDR, Optical communication TE-cooled Type Stable detection of light . . 415 V . C4777 00.5 10 kHz 100 MHz | 5.00x 1057 | 0.8 nWr.m.s 7 +1.0% ~ - Scientific measurement +5V *4: Integrated optical fiber connector types are also available. *5: M=30, A=800 nm *6: M=30, A=620 nm *7: M=100, A=800 nm 39