SD803C..C SERIES
FAST RECOVERY DIODES Hockey Puk Version
845A
1
Bulletin I2069 rev. B 04/00
www.irf.com
Features
High power FAST recovery diode series
1.0 to 1.5 µs recovery time
High voltage ratings up to 1600V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Press-puk encapsulation
Case style conform to JEDEC B-43
Maximum junction temperature 125°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
case style B-43
Major Ratings and Characteristics
IF(AV) 845 A
@ Ths 55 °C
IF(RMS) 1326 A
@ Ths 25 °C
IFSM @ 50Hz 11295 A
@ 60Hz 11830 A
I2t@
50Hz 640 KA2s
@ 60Hz 583 KA2s
VRRM range 400 to 1600 V
trr range 1.0 to 1.5 µs
@ TJ25 °C
TJ- 40 to 125 °C
Parameters SD803C..C Units
SD803C..C Series
2
Bulletin I2069 rev. B 04/00
www.irf.com
Voltage VRRM max. repetitive VRSM , maximum non- IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage TJ = 125°C
VVmA
04 400 500
SD803C..S10C 08 800 900
10 1000 1100
12 1200 1300
SD803C..S15C 14 1400 1500
16 1600 1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
45
Parameter SD803C..C Units Conditions
Forward Conduction
KA2s
A
IF(AV) Max. average forward current 845(420) A 180° conduction, half sine wave.
@ Heatsink temperature 55(75) °C Double side (single side) cooled
IF(RMS) Max. RMS current 1326 A @ 25°C heatsink temperature double side cooled
IFSM Max. peak, one-cycle 11295 t = 10ms No voltage
non-repetitive forward current 11830 t = 8.3ms reapplied
9500 t = 10ms 100% VRRM
9945 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 640 t = 10ms No voltage Initial TJ = TJ max.
583 t = 8.3ms reapplied
451 t = 10ms 100% VRRM
412 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 6400 KA2√s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level of threshold voltage 1.02 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2High level of threshold voltage 1.32 (I > π x IF(AV)), TJ = TJ max.
rf1 Low level of forward slope resistance 0.38 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rf2 High level of forward slope resistance 0.28 (I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage 1.89 V Ipk= 2655A, TJ = 25°C, tp = 10ms sinusoidal wave
mΩ
V
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ
= 125
°C
Recovery Characteristics
typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
TJ
= 25 oC
1000 25 - 30
S10 1.0 2.0 45 34
S15 1.5 3.2 87 51
SD803C..C Series
3
Bulletin I2069 rev. B 04/00
www.irf.com
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.076 DC operation single side cooled
junction to heatsink 0.038 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Case style B-43 See Outline Table
Parameter SD803C..C Units Conditions
Thermal and Mechanical Specifications
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
°C
K/W
Ordering Information Table
5123 4
SD 80 3 C 16 S15 C
7
6
Device Code
1- Diode
2- Essential part number
3-3 = Fast recovery
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7- C = Puk Case B-43
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180°0.006 0.007 0.005 0.005
120°0.008 0.008 0.008 0.008
90°0.010 0.010 0.011 0.011 K/W TJ = TJ max.
60°0.015 0.015 0.016 0.016
30°0.026 0.026 0.026 0.026
SD803C..C Series
4
Bulletin I2069 rev. B 04/00
www.irf.com
Outline Table
70
80
90
100
110
120
130
0 50 10 0 150 2 00 250 30 0 350 400 450
30°
60° 90° 120°
180°
A ve ra g e Fo rw a rd C urre nt (A )
Maxim um Allowable Heatsink Tem perature (°C)
Conduction Angle
SD 803C ..C Se ries
(Single Side C o oled)
R (D C ) = 0.076 K/W
th J- hs
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30°
60°
90°
180°DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD803C..C Series
(Single Side Cooled)
R (DC) = 0.076 K/W
thJ-hs
0.8(0.03) MIN.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) DEEP MIN. BOTH ENDS
14 .4 ( 0 .57 )
15 .4 ( 0 .61 )
BOTH ENDS
40.5 (1.59) DIA. MAX.
25.3 (1) DIA. MAX.
TWO PLACES
42 (1.65) D IA. MAX.
Conform to JEDEC B-43
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
SD803C..C Series
5
Bulletin I2069 rev. B 04/00
www.irf.com
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
30°60°
90°
120°
180°
Average Forward Current (A)
M aximum Allowable Heatsink Tem perature (°C)
Cond uction Angle
SD 803 C..C Series
(Double Side C o oled)
R (D C ) = 0.038 K/W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30°60°
90°
180°DC
120°
A ve rage Fo rw a rd Curre nt (A)
Maxim um Allow able Heatsink Temp erature (°C)
Conduction Period
SD 803 C..C Se rie s
(D ouble Side C ooled)
R (D C ) = 0.038 K/W
thJ-hs
Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500 600 700 800 900
180°
120°
90°
60°
30°RMS Limit
Conduction Angle
Maximum Average Forward Power Loss (W)
Average Forw ard Current (A)
SD803C..C Series
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0 200 400 600 800 1000 1200 1400
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Period
Maxim um Average Forward Power Loss (W)
Average Forward Current (A)
SD 803C ..C Series
T = 125°C
J
4000
5000
6000
7000
8000
9000
10000
1 10 100
Number Of Equa l Amplitude H alf Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Initial T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At An y Rated Load Condition And W ith
R a te d V A p p lie d Fo ll o w in g Su rg e .
RRM
SD 803C ..C Series
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine W ave Forward Current (A)
Ve rsus P ulse Tra in D uratio n.
M a xim u m N o n R ep e titive Surg e C urren t
In it ia l T = 1 2 5 °C
No Voltage Re a p p lied
Ra te d V Reap plie d
RRM
J
SD 8 03C ..C Se rie s
SD803C..C Series
6
Bulletin I2069 rev. B 04/00
www.irf.com
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 11 - Recovery Time Characteristics Fig. 12 - Recovery Charge Characteristics Fig. 13 - Recovery Current Characteristics
Fig. 16 - Recovery Current CharacteristicsFig. 14 - Recovery Time Characteristics Fig. 15 - Recovery Charge Characteristics
10
100
1000
10000
00.511.522.533.544.5
T = 25°C
J
Instantaneous Forward Voltage (V)
Instantaneous Forw ard Current (A)
T = 125°C
J
SD803C..C Series
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Squ are W a ve Pulse D ura tion (s)
thJ-hs
Transien t Th ermal Im pedan ce Z (K/W )
St e a d y S t a te V a lu e
R = 0.076 K/W
(Single Side Cooled)
R = 0.038 K/W
(Double Side Co oled)
(D C O peratio n)
thJ-hs
thJ-hs
SD803 C..C Serie s
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
M a xim um Re ve rse Re co ve ry C urre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1 000 A
Square Pulse
FM
500 A
250 A
SD 803C ..S10C Se rie s
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 7 0 80 90 100
M a xim um R e ver se Rec ove ry C harg e - Q rr (µ C )
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 1000 A
Squa re Pulse
FM
500 A
250 A
SD 803C..S10C Series
T = 125 °C; V = 30V
r
J
1.6
1.7
1.8
1.9
2
2.1
2.2
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim um R eve rse Rec ov ery Tim e - Trr (µs)
I = 10 00 A
Sq u are P ulse
500 A
250 A
FM
SD 803C..S10C Series
T = 125 °C; V = 30V
r
J
20
30
40
50
60
70
80
90
100
110
120
130
140
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall O f Forward Current - di/dt (A/µs)
I = 1 00 0 A
Sq u ar e P uls e
FM
500 A
250 A
SD803C..S15C Series
T = 125 °C; V = 30V
r
J
40
60
80
100
120
140
160
180
200
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Ch arge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 10 00 A
Square Pulse
FM
500 A
250 A
SD803C..S15C Series
T = 125 °C; V = 30V
r
J
2
2.5
3
3.5
4
10 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
M a xim um R ev erse Re cov ery Tim e - Trr (µs)
I = 1 000 A
Square Pulse
FM
500 A
250 A
SD 803C..S15C Se rie s
T = 125 °C; V = 30V
J
r
SD803C..C Series
7
Bulletin I2069 rev. B 04/00
www.irf.com
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse B a sew id th (µs)
Peak Forward Current (A)
4
d v/ d t = 10 00 V / µs
Sinu soidal Pulse
20 joules per pulse
10
0.4
0.2
0.04
T = 12 5 °C, V = 800V
J
RR M
0.02
0.01
SD803C..S10C Series
tp
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse Ba se w idth (µs)
4
20 joules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD803C..S10C Series
J
RRM
tp
1E1
1E1 1E2 1E3 1E4
1
2
0.1
Pulse Basew id th (µs)
4
20 joules per pulse
10
0.4
0.2
T = 12 5°C, V = 800V
Trap ezo id al Pu lse
dv/dt = 1000V/µs; di/dt=50A/µs
SD80 3C..S15C Series
J
RR M
tp
1E1
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E 3 1E 4
1
2
0.1
Pulse Base w idth (µs)
Pe a k Forw a rd C urren t (A)
4
dv/dt = 1000V/µs
Sin uso id al Pu lse
20 jo ules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 800V
0.02
0.01
J
RRM
SD803C..S15C Series
tp
1E4
Fig. 18 - Maximum Total Energy Loss Per Pulse Characteristics
