November 2012
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
FR011L5J (11m, -30V)
Low-Side Reverse Bias / Reverse Polarity Protector
Features
Up to -30V Reverse-Bias Protection
Nano Seconds of Reverse-Bias Blocking
Response Time
+29V 24-Hour “Withstand” Rating
11m Typical Series Resistance at 5V
MicroFET™ 2x2mm Package Size
RoHs Compliant
USB Tested and Compatible
Applications
USB 1.0, 2.0 and 3.0 Devices
USB Charging
Mobile Devices
Mobile Medical
POS Systems
Toys
Any DC Barrel Jack Powered Device
Any DC Devices subject to Negative Hot Plug or
Inductive Transients
Automotive Peripherals
Description
Reverse bias is an increasingly common fault event that
may be generated by user error, improperly installed
batteries, automotive environments, erroneous
connections to third-party chargers, negative “hot plug”
transients, inductive transients, and readily available
negatively biased rouge USB chargers.
Fairchild circuit protection is proud to offer a new type of
reverse bias protection devices. The FR devices are low
resistance, series switches that, in the event of a
reverse bias condition, shut off power and block the
negative voltage to help protect downstream circuits.
The FR devices are optimized for the application to offer
best in class reverse bias protection and voltage
capabilities while minimizing size, series voltage drop,
and normal operating power consumption.
In the event of a reverse bias application, FR011L5J
devices effectively provide a full voltage block and can
easily protect -0.3V rated silicon.
From a power perspective, in normal bias, an 11m FR
device in a 1.5A application will generate only 17mV of
voltage drop or 25mW of power loss. In reverse bias,
FR devices dissipate less then 20µW in a 16V reverse
bias event. This type of performance is not possible with
a diode solution.
Benefits extend beyond the device. Due to low power
dissipation, not only is the device small, but heat sinking
requirements and cost can be minimized as well.
Ordering Information
Part Number Top Mark Package Packing Method
FR011L5J 11L
6-Lead, Molded Leadless Package (MLP), Dual,
Non-JEDEC, 2mm Square, Single-Tied DAP
3000 on Tape & Reel;
7-inch Reel, 12mm Tape
CTL
POS
NEG
MicroFET 2x2 mm
Pin 1
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 2
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Diagrams
Power
Switch
CTL
NEG POS
Startup Diode
Inrush Reducer
OV Bypass
Protection
USB Device
Circuit
Power Source
(USB Connector)
FR011L5J
NEG POS
CTL
I
IN
V
IN
Protected USB Device Circuit
Figure 1. Block Diagram Figure 2. Typical Schematic
Pin Configuration
Figure 3. Pin Assignments
Pin Definitions
Name Pin Description
POS 4
The ground of the load circuit being protected. Current flows into this pin during normal
operation.
CTL 3
The control pin of the device. A positive voltage to the NEG pin turns the switch on and a
negative voltage turns the switch to a high-impedance state.
NEG 1, 2, 5, 6 The ground of the input power source. Current flows out of this pin during normal operation.
CTL
POS
NEG
Pin 1
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 3
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Absolute Maximum Ratings
Values are at TA=25°C unless otherwise noted.
Symbol Parameter Value Unit
V+ MAX_OP Steady-State Normal Operating Voltage between CTL and NEG Pins
(VIN = V+ MAX_OP, IIN = 1.5A, Switch On) +20
V
V+ 24 24-Hour Normal Operating Voltage Withstand Capability between CTL and
NEG Pins (VIN = V+ 24, IIN = 1.5A, Switch On) +29
V- MAX_OP Steady-State Reverse Bias Standoff Voltage between CTL and NEG Pins
(VIN = V- MAX_OP) -30
IIN Input Current VIN = 5V, Continuous(2) (see Figure 4) 10 A
TJ Operating Junction Temperature 150 °C
PD Power Dissipation TA = 25°C(2) (see Figure 4) 2.4
W
TA = 25°C(2) (see Figure 5) 0.9
IDIODE_CONT Steady-State Diode Continuous Forward Current from POS to NEG 2 A
IDIODE_PULSE Pulsed Diode Forward Current from POS to NEG (300µs Pulse) 210
ESD Electrostatic Discharge
Capability
Human Body Model, JESD22-A114 0.6
kV
Charged Device Model, JESD22-C101 2
System Model, IEC61000-4-2
(CTL is shorted to POS)(3)
Contact 8
Air 15
Notes:
1. The V+24 rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on
qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is
intended to indicate the device’s ability to withstand transient events that exceed the recommended operating
voltage rating. Specification is based on qualification devices tested using accelerated destructive testing at
higher voltages, as well as production pulse testing at the V+24 level. Production device field life results may vary.
Results are also subject to variation based on implementation, environmental considerations, and circuit
dynamics. Systems should never be designed with the intent to normally operate at V+24 levels. Contact Fairchild
Semiconductor for additional information.
2. The device power dissipation and thermal resistance (R) are characterized with device mounted on the following
FR4 printed circuit boards, as shown in Figure 4 and Figure 5
3. Conducted with shorted load. Open load performance is not guaranteed.
Figure 4. 1 Square Inch of 2-ounce copper Figure 5. Minimum Pads of 2-ounce Copper
Thermal Characteristics
Symbol Parameter Value Unit
RJA Thermal Resistance, Junction to Ambient(2) (see Figure 4) 61
°C/W
RJA Thermal Resistance, Junction to Ambient(2) (see Figure 5) 153
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 4
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
Positive Bias Characteristics
RON Device Resistance, Switch On
VIN = +4V, IIN = 1.5A 13 20
m
VIN = +5V, IIN = 1.5A 11 15
VIN = +5V, IIN = 1.5A,
TJ = 125°C 15
VIN = +12V, IIN = 1.5A 9 13
VON
Input Voltage, VIN, at which Voltage
at POS, VPOS, Reaches a Certain
Level at Given Current IIN = 100mA, VPOS = 45mV,
VNEG = 0V
1.4 2.4 3.5 V
VON / TJ Temperature Coefficient of VON -3.9 mV/°C
IDIODE_CONT Continuous Diode Forward Current VCTL = VPOS 2 A
VF Diode Forward Voltage VCTL = VPOS, IDIODE = 0.1A,
Pulse width < 300µs 0.56 0.60 0.73 V
IBIAS Bias Current Flowing out of NEG Pin
during Normal Bias Operation
VCTL = 5V, VNEG = 0V,
No Load 15 nA
Negative Bias Characteristics
V- MAX_OP Reverse Bias Breakdown Voltage
IIN = -250µA, VCTL = VPOS = 0V
-30 V
V- MAX_OP
/ TJ
Reverse Bias Breakdown Voltage
Temperature Coefficient 16 mV/°C
I- Leakage Current from NEG to POS
in Reverse-Bias Condition VNEG = 20V, VCTL = VPOS = 0V 1 µA
tRN Time to Respond to Negative Bias
Condition
VNEG = 5V, VCTL = 0V, CLOAD =
10µF, Reverse Bias Startup
Inrush Current = 0.2A
50 ns
Dynamic Characteristics
CI Input Capacitance between CTL and
NEG
VIN = -5V, VCTL = VPOS = 0V, f
= 1MHz
1011
pF
CS Switch Capacitance between POS
and NEG 81
CO Output Capacitance between CTL
and POS 1456
RC Control Internal Resistance 1.7
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 5
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Typical Characteristics
TJ = 25°C unless otherwise specified.
02468101214161820
0
2
4
6
8
10
12
14
16
16V
12V
9V
5V
RON, SWITCH ON-RESISTANCE (mΩ)
IIN, INPUT CURRENT (A)
Input Voltage, VIN = 4V
0.00.30.60.91.21.51.82.1
2.2
2.4
2.6
2.8
3.0
3.2
VON, MINIMUM INPUT VOLTAGE TURNING
ON THE SWITCH (V)
IIN, INPUT CURRENT (A)
Figure 6. Switch On Resistance vs. Switch Current Figure 7. Minimum Input Voltage to Turn On Switch
vs. Current at 45mV Switch Voltage Drop
13579111315171921
0.0
0.2
0.4
0.6
0.8
1.0
1.5A
0.9A
TJ = 25oC
RSW, EFFECTIVE SWITCH RESISTANCE (Ω)
VIN, INPUT VOLTAGE (V)
IIN = 0.1A
-75 -50 -25 0 25 50 75 100 125 150
6
7
8
9
10
11
12
13
14
15
IIN = 0.1A
12V
RON, SWITCH ON-RESISTANCE (mΩ)
TJ, JUNCTION TEMPERATURE (oC)
VIN = 5V
Figure 8. Effective Switch Resistance RSW vs.
Input Voltage VIN
Figure 9. Switch On Resistance vs. Junction
Temperature at 0.1A
-75 -50 -25 0 25 50 75 100 125 150
6
7
8
9
10
11
12
13
14
15
IIN = 1.5A
12V
RON, SWITCH ON-RESISTANCE (mΩ)
TJ, JUNCTION TEMPERATURE (oC)
VIN = 5V
1E-4 1E-3 0.01 0.1 1 10 100 1000
0.1
1
10
100
1000
PEAK PACKAGE POWER (W)
t, PULSE WIDTH (s)
Figure 10. Switch On Resistance vs. Junction
Temperature at 1.5A
Figure 11. Single-Pulse Maximum Power vs. Time
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 6
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Typical Characteristics
TJ = 25°C unless otherwise specified.
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1E-3
0.01
0.1
1
10
100
-55oC
25oC
TJ = 125oC
IF, STARTUP DIODE FORWARD CURRENT (A)
VF, STARTUP DIODE FORWARD VOLTAGE (V)
VPOS = VCTL = 0V
Figure 12. Startup Diode Current vs. Forward Voltage
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 7
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Application Test Configurations
USB Device
Circuit
Power Source
(USB Connector)
FR011L5J
NEG POS
CTL
I
IN
V
IN
Protected USB Device Circuit
Figure 13. Typical Application Circuit for USB Applications
FR011L5J
NEG POS
CTL
Pulse
Generator
DC Power
Supply
C1
C2
R1
R3
R2
Q1-1
FDS8858CZ
Q1-2
FDS8858CZ
iIN
4 G2
1 S1
3 S2
5,6 D2
2 G1
7,8 D1
Figure 14. Startup Test Circuit – Normal Bias with FR011L5J
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 8
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Application Test Configurations (Continued)
FR011L5J
NEG POS
CTL
C1 C2
R1
R3
R2
Q1-1
FDS8858CZ
Q1-2
FDS8858CZ
DC Power
Supply
Pulse
Generator
iIN
4 G2
1 S1
3 S2 5,6 D2
2 G1
7,8 D1
Figure 15. Startup Test Circuit – Reverse Bias with FR011L5J
Pulse
Generator
DC Power
Supply
C1
C2
R1
R3
R2
Q1-1
FDS8858CZ
Q1-2
FDS8858CZ
i
IN
4 G2
1 S1
3 S2
5,6 D2
2 G1
7,8 D1
Figure 16. Startup Test Circuit – without FR011L5J
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 9
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Typical Application Waveforms
Typical USB3.0 conditions.
Figure 17. Normal Bias Startup Waveform, DC Power Source=5V, C1=100µF, C2=10µF, R1=R2=10k, R3=27
Figure 18. Reverse Bias Startup Waveform, DC Power Source=5V, C1=100µF, C2=10µF, R1=R2=10k, R3=27
VIN, 2V/div. The input voltage between CTL and NEG
VD, 1V/div. The startup diode voltage between POS and NEG
VOUT, 2V/div. The output voltage between CTL and POS
iIN, 5A/div. The input current flowing from POS to NEG
Time: 5
µ
s/div
VIN, 2V/div. The input voltage between CTL and NEG
VD, 2V/div. The startup diode voltage between POS and NEG
VOUT, 1V/div. The output voltage between CTL and POS
iIN, 0.1A/div. The input current flowing out of NEG
Time: 100ns/div
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 10
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Typical Application Waveforms (Continued)
Typical USB3.0 conditions.
Figure 19. Startup Waveform without FR011L5J, DC Power Source=5V, C1=100µF, C2=10uF,
R1=R2=10k, R3=27
Application Information
Figure 17 shows the voltage and current waveforms
when a virtual USB3.0 device is connected to a 5V
source. A USB application allows a maximum source
output capacitance of C1 = 120µF and a maximum
device-side input capacitance of C2 = 10µF plus a
maximum load (minimum resistance) of R3 = 27. C1 =
100µF, C2 = 10µF and R3 = 27 were used for testing.
When the DC power source is connected to the circuit
(refer to Figure 13), the built-in startup diode initially
conducts the current such that the USB device powers
up. Due to the initial diode voltage drop, the FR011L5J
effectively reduces the peak inrush current of a hot plug
event. Under these test conditions, the input inrush
current reaches about 6.3A peak. While the current
flows, the input voltage increases. The speed of this
input voltage increase depends on the time constant
formed by the load resistance R3 and load capacitance
C2. The larger the time constant, the slower the input
voltage increase. As the input voltage approaches a
level equal to the protector’s turn-on voltage, VON, the
protector turns on and operates in Low-Resistance
Mode as defined by VIN and operating current IIN.
In the event of a negative transient, or when the DC
power source is reversely connected to the circuit, the
device blocks the flow of current and holds off the
voltage, thereby protecting the USB device. Figure 18
shows the voltage and current waveforms when a virtual
USB3.0 device is reversely biased; the output voltage is
near 0 and response time is less than 50ns.
Figure 19 shows the voltage and current waveforms
when no reverse bias protection is implemented. In
Figure 17, while the reverse bias protector is present,
the input voltage, VIN, and the output voltage, VO, are
separated and look different. When this reverse bias
protector is removed, VIN and VO merge, as shown
inFigure 19 as VIN. This VIN is also the voltage applied to
the load circuit. It can be seen that, with reverse bias
protection, the voltage applied to the load and the
current flowing into the load look very much the same as
without reverse bias protection.
Benefits of Reverse Bias Protection
The most important benefit is to prevent accidently
reverse-biased voltage from damaging the USB load.
Another benefit is that the peak startup inrush current
can be reduced. How fast the input voltage rises, the
input/output capacitance, the input voltage, and how
heavy the load is determine how much the inrush
current can be reduced. In a 5V USB application, for
example, the inrush current can be 5% - 20% less with
different input voltage rising rate and other factors. This
can offer a system designer the option of increasing C2
while keeping “effective” USB device capacitance down.
VIN, 2V/div. The voltage applied on the load circuit
iIN, 2A/div. The input current
Time: 5us/div
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 11
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
Physical Dimensions
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION
ASME Y14.5M, 1994
0.10 CAB
0.05 C
TOP VIEW
BOTTOM VIEW
RECOMMENDED LAND PATTERN OPT 1
0.10 C
0.08 C
B
A
C
2.00
2.00
0.05
0.00
0.10 C
2X
2X
0.8 MAX
SIDE VIEW
SEATING
PLANE
0.10 C
(0.20)
0.33
0.20
13
4
6
4
6
31
PIN #1 IDENT
0.65
1.30
1.35
1.05
0.40 TYP
0.65 TYP
0.35
0.25
2.30
1.00
MO-229 DATED AUG/2003
0.61
0.51
0.30
0.66
RECOMMENDED LAND PATTERN OPT 2
4
6
3
1
1.35
(0.475)
1.05
0.40 TYP
0.65 TYP
2.30
1.00 No Traces allowed in
this Area
Pin #1 location
1.05
0.95
D. DRAWING FILENAME: MKT-MLP06Lrev3.
0.50
0.15
0.50 0.20
0.45
(0.20)
1.00
0.80
6X
6X
Figure 20. 6-Lead, Molded Leadless Package (MLP), Dual, Non-JEDEC, 2mm Square, Single-Tied DAP
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’ s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FR011L5J • Rev. C3 12
FR011L5J — Low-Side Reverse Bias / Reverse Polarity Protector
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool
AccuPower
AX-CAP*
BitSiC
Build it Now
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CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
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®
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Green FPS e-Series
Gmax
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IntelliMAX
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Making Small Speakers Sound Louder
and Better™
MegaBuck
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MicroFET
MicroPak
MicroPak2
MillerDrive
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OptoHiT
OPTOLOGIC®
OPTOPLANAR®
®
PowerTrench
®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM®
STEALTH
SuperFET®
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS®
SyncFET
Sync-Lock™
®*
The Power Franchise
®
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TinyBuck
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TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT®*
μSerDes
UHC®
Ultra FRFET
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VCX
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XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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are intended for surgical implant into the body or (b) support or
sustain life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
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Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I62
Mouser Electronics
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FR011L5J