BYS10-25 thru BYS10-45 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier Major Ratings and Characteristics IF(AV) 1.5 A VRRM 25 V to 45 V IFSM 40 A VF 0.50 V Tj max. 150 C DO-214AC (SMA) Features Mechanical Data * * * * * * * * Case: DO-214AC (SMA) Epoxy meets UL-94V-0 Flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes the cathode end Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Very low switching losses High surge capability Meets MSL level 1, per J-STD-020C Solder Dip 260 C, 40 seconds Typical Applications For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications Maximum Ratings TA = 25 C unless otherwise specified Parameter Symbol Device marking code Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current Peak forward surge current single half sine-wave superimposed on rated load Junction and storage temperature range Document Number 86013 14-Jul-05 at 8.3 ms at 10 ms BYS10-25 BYS10-35 BYS10-45 BYS 025 BYS 035 BYS 045 25 35 45 Unit V IF(AV) 1.5 A IFSM 40 30 A TJ, TSTG - 65 to + 150 C www.vishay.com 1 BYS10-25 thru BYS10-45 Vishay General Semiconductor Electrical Characteristics TA = 25 C unless otherwise specified# Parameter Test condition Maximum instantaneous forward at 1.0 A (1) voltage Maximum DC reverse current TJ = 25 C TJ = 100 C at VRRM(1) Symbol BYS10-25 BYS10-35 BYS10-45 Unit VF 500 mV IR 500 10 A mA Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle Thermal Characteristics TA = 25 C unless otherwise specified Parameter Symbol Maximum Thermal Resistance - Junction Lead RJL Maximum Thermal Resistance - Junction Ambient RJA BYS10-25 BYS10-35 BYS10-45 25 Unit C/W 150 (1) C/W 125 (2) 100 (3) Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 m Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 m Cu Ratings and Characteristics Curves 1000 7 BYS10-45 6 5 BYS10-35 4 RthJA=25K/W 3 BYS10-25 2 100 10 V R=V RRM 1 1 RthJA=100K/W 0.1 0 0 40 80 120 160 Tj -- JunctionTemperature (C) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 2 IR -- Reverse Current (mA) PR -- Max. Reverse Power Dissipation (W) (TA = 25 C unless otherwise noted) 200 0 40 80 120 160 Tj -- JunctionTemperature (C) 200 Figure 2. Max. Reverse Current vs. Junction Temperature Document Number 86013 14-Jul-05 BYS10-25 thru BYS10-45 Vishay General Semiconductor V R =V RRM, Half Sinewave, RthJA=25K/W IF -- Forward Current (A) IFAV -- Average Forward Current (A) 100 2.0 1.6 1.2 BYS10-25 0.8 BYS10-35 0.4 Tj =150-C 10 1 Tj =25-C 0.1 BYS10-45 0 0 40 80 120 160 Tamb -- Ambient Temperature (C) 0.01 200 0 Figure 3. Max. Average Forward Current vs. Ambient Temperature 0.4 0.8 1.2 1.6 VF -- Forward Voltage (V) 2.0 Figure 5. Max. Forward Current vs. Forward Voltage 2.0 Transient Thermal Impedance (C/W) IFAV -- Average Forward Current (A) 100 V R=0V, Half Sinewave 1.6 RthJA=25K/W 1.2 100K/W 0.8 125K/W 0.4 150K/W 40 80 120 160 1 0.1 0.01 0 0 10 200 0.1 10 1 100 t, Heating Time (sec.) Tamb -- Ambient Temperature (C) Figure 4. Max. Average Forward Current vs. Ambient Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package outline dimensions in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.074 MAX. (1.88 MAX.) 0.066 MIN. (1.68 MIN.) 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.208 (5.28) REF 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number 86013 14-Jul-05 www.vishay.com 3