LTV826STA1-V - Lite-On Electronics, Inc.

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

FEATURES

* Current transfer ratio

June 2010

( CTR : MIN. 50% at I

F

=

5mA, V

CE

=

5V )

* High input-output isolation voltage

( V

iso

=

5,000Vrms )

* Response time

( t

r

: TYP. 4µs at V

CE

=

2V, I

C

=

2mA, R

L

=

100Ω )

* Dual-in-line package :

LTV816-V : 1-channel type

LTV826-V : 2-channel type

LTV846-V : 4-channel type

* Wide lead spacing package :

LTV816M-V : 1-channel type

LTV826M-V : 2-channel type

LTV846M-V : 4-channel type

* Surface mounting package :

LTV816S-V : 1-channel type

LTV826S-V : 2-channel type

LTV846S-V : 4-channel type

* Tape and reel packaging :

LTV816STA1-V, LTV826STA1-V

* Safety approval

UL , CSA, FIMKO, NEMKO, DEMKO, SEMKO, VDE* approved

(*Requires “V” ordering option)

* RoHS compliance

Part No. :

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LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV816-V :

LTV826-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked

(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)

*4. Rank shall be or shall not be marked.

*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.

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LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV846-V :

LTV816M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked

(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)

*4. Rank shall be or shall not be marked.

*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.

Part No. :

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LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV826M-V :

LTV846M-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked

(Z : Taiwan, Y : Thailand, X : China-TJ, W: China-CZ)

*4. Rank shall be or shall not be marked.

*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.

Part No. :

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV816S-V :

LTV826S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked

(Z : Taiwan, Y : Thailand, X : China-TJ, W: China-CZ)

*4. Rank shall be or shall not be marked.

*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.

Part No. :

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5

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

OUTLINE DIMENSIONS

LTV846S-V :

*1. Year date code.

*2. 2-digit work week.

*3. Factory identification mark shall be marked

(W: China-CZ, X : China-TJ, Y : Thailand, Z : Taiwan)

*4. Rank shall be or shall not be marked.

*5. “4” or “V” for 4 pin VDE option; for 8 & 16 pin devices.

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

TAPING DIMENSIONS

LTV816STA1-V :

LTV826STA1-V :

Description Symbol Dimensions in mm ( inches )

Tape wide W 16 ± 0.3 ( .63 )

Pitch of sprocket holes P

0

4 ± 0.1 ( .15 )

Distance of compartment F

P

2

7.5 ± 0.1 ( .295 )

2 ± 0.1 ( .079 )

Distance of compartment to compartment P

1

12 ± 0.1 ( .472 )

Part No. :

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ABSOLUTE MAXIMUM RATING

( Ta = 25°C )

PARAMETER SYMBOL

RATING UNIT

Forward Current I

F

50 mA

Reverse Voltage V

R

6 V

INPUT

Power Dissipation P 70 mW

Collector - Emitter Voltage V

CEO

80 V

Emitter - Collector Voltage V

ECO

6 V

Collector Current I

C

50 mA

OUTPUT

Collector Power Dissipation P

C

150 mW

Total Power Dissipation P

tot

200 mW

*1 Isolation Voltage V

iso

5,000 Vrms

Operating Temperature（LTV- 826 / 846） T

opr

-30 ~ +100 °C

Operating Temperature （LTV-816） T

opr

-30 ~ +110 °C

Storage Temperature T

stg

-55 ~ +125 °C

*2 Soldering Temperature T

sol

260 °C

*1. AC For 1 Minute, R.H. = 40 ~ 60%

Isolation voltage shall be measured using the following method.

(1) Short between anode and cathode on the primary side and between collector and

emitter on the secondary side.

(2) The isolation voltage tester with zero-cross circuit shall be used.

(3) The waveform of applied voltage shall be a sine wave.

*2. For 10 Seconds

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

ELECTRICAL - OPTICAL CHARACTERISTICS

( Ta = 25°C )

PARAMETER SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS

Forward Voltage V

F

— 1.2 1.4 V I

F

=20mA

Reverse Current I

R

— — 10 µA

V

R

=4V

INPUT

Terminal Capacitance C

t

— 30 250

pF

V=0, f=1KHz

Collector Dark Current I

CEO

— — 100

nA

V

CE

=20V, I

F

=0

Collector-

Emitter

Breakdown Voltage BV

CEO

80 — — V I

C

=0.1mA

I

F

=0

OUTPUT

Emitter-Collector

Breakdown Voltage BV

ECO

6 — — V I

E

=10µA

I

F

=0

Collector Current I

C

2.5 — 30 mA

*1

Current Transfer Ratio CTR

50 — 600

%

I

F

=5mA

V

CE

=5V

Collector-

Emitter

Saturation Voltage V

CE(sat)

— 0.1 0.2 V I

F

=20mA

I

C

=1mA

Isolation Resistance R

iso

5×10

10

1×10

11

— Ω DC500V

40 ~ 60% R.H.

Floating Capacitance C

f

— 0.6 1 pF

V=0, f=1MHz

Response Time (Rise) t

r

— 4 18 µs

TRANSFER

CHARACTERISTICS

Response Time (Fall) t

f

— 3 18 µs

V

CE

=2V, I

C

=2mA

R

L

=100Ω

*1 CTR

I

I100%

C

F

= ×

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

RANK TABLE OF CURRENT TRANSFER RATIO CTR

MODEL NO. RANK MARK CTR ( % )

LTV816-V L 50 ~ 100

LTV816-V A 80 ~ 160

LTV816-V B 130 ~ 260

LTV816-V C 200 ~ 400

LTV816-V D 300 ~ 600

LTV816-V L or A or B or C or D 50 ~ 600

LTV8※6-V B 130 ~ 260

LTV8※6-V B or C or BC 130 ~ 400

LTV8※6-V C 200 ~ 400

LTV8※6-V C or D or CD 200 ~ 600

LTV8※6-V B、BC、C、CD or No mark

50 ~ 600

※ = 2 or 4

CONDITIONS

I

F

= 5 mA

V

CE

= 5 V

Ta = 25 °C

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

Fig.1 Forword Current Fig.2 Collector Power Dissiption

vs. Ambient Temperature

Fig.4 Forward Current vs. Forward

Fig.5 Current Transfer Ratio vs.

Forward Current Fig.6 Collector Current vs.

Collector-emitter Voltage

F

FCE

F

0-30

Ta= 75 C

50 C 25 C

0 C

-25 C

V = 5V

Ta= 25 C

CE

Ta= 25 C

I = 30mA

Pc(MAX.)

5mA

F

10mA

20mA

vs. Ambient Temperatute

Collector-emitter voltage V (V)

Forward voltage V (V)

Ambient temperature Ta ( C)Ambient temperature Ta ( C)

Forward current I (mA)

Collector Power dissipation Pc (mW)

Forward current I (mA)

Current transfer ratio CTR (%)

Collector current Ic (mA)

Fig.3 Collector-emitter Saturation

Voltage vs. Forward Current

F

CE

Ic=0.5mA

1mA

3mA

7mA

5mA

Ta= 25 C

Collecotr-emitter saturation voltage

V (sat) (V)

Forward current I (mA)

Voltage

o

O

o

oo

o

0 25 50 75 100 125 0-30 12525 50 75 100

10

20

30

40

50

60

0

50

100

150

200

0

1

0

015

1

2

3

4

5

6

0.5 1.0 1.5 2.0 2.5 3.0

2

5

10

20

50

100

200

500

01002 5 10 20 50

20

40

60

80

100

120

140

160

180

200

123456789

10

20

30

105

5

15

25

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

CHARACTERISTICS CURVES

R = 10k

L

1k 100

tr

tf

td

ts

Fig.8 Collector-emitter Saturation Voltage

Fig.9 Collector Dark Current vs.

Ambient Temperature Fig.10 Response Time vs. Load

Fig.11 Frequency Response

L

CEO

0-30

CE

V = 2V

Ic= 2mA

Ta= 25 C

CE

I = 5mA

V = 5V

CE

FF

Ic= 1mA

I = 20mA

CE

V = 2V

Ic= 2mA

Ta= 25 C

vs. Ambient Temperature

Ambient temperature Ta ( C)

Load resistance R (k )

Ambient temperature Ta ( C)

Frequency f (kHz)

Response time ( s)

Relative current transfer ratio (%)

Collector dark current I (A)

Voltage gain Av (dB)

Collector-emitter saturation voltage

V (sat) (V)

-10

o

oo

o

0 25 50 75 100

50

100

150

-25

0 0 25 50 75 100

10 -25 0.2

0.050 25 50 75 100

10

-9

-8

-7

-6

-5

-11

0.1 0.2 0.5 1 2 5 10

0.5

1

2

5

10

20

50

100

200

500

0.5

20

10

0

2 10 100 500

Resistance

Fig.7 Relative Current Transfer Ratio

vs. Ambient Temperature

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

1 5 20 50

CE

V =20V

125 125

125

Test Circuit for Frequency Response

Test Circuit for Response Time

Part No. :

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)

Unit : mm

4 PIN 8 PIN

16 PIN

Part No. :

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BNS-OD-C131/A4

LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

TEMPERATURE PROFILE OF SOLDERING REFLOW

(1) One time soldering reflow is recommended within the condition of temperature and time

profile shown below.

1. Wave solder

- 260˚C / 10 sec.

2. IR Reflow

Profile item Conditions

Preheat

- Temperature Min (T

Smin

)

- Temperature Max (T

Smax

)

- Time (min to max) (ts)

150˚C

180˚C

90±30˚C

Soldering zone

- Temperature (T

L

)

- Time (t

L

)

250˚C

10~15 sec

Peak Temperature (T

P

) 260˚C

Ramp-down rate 3~6˚C / sec

Time (sec)

ts (Preheat)

25 C

Temperature ( C)

Tsmin

Tsmax

Tp

tLSoldering zone

Ramp-down

TL

(2) When using another soldering method such as infrared ray lamp, the temperature may rise

partially in the mold of the device.

Keep the temperature on the package of the device within the condition of above (1)

Part No. :

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LITE-ON TECHNOLOGY CORPORATION

Property of LITE-ON Only

Notes:

- Lite-On is continually improving the quality, reliability, function or design and

Lite-On reserves the right to make changes without further notices.

- The products shown in this publication are designed for the general use in electronic

applications such as office automation equipment, communications devices,

audio/visual equipment, electrical application and instrumentation.

- For equipment/devices where high reliability or safety is required, such as space

applications, nuclear power control equipment, medical equipment, etc, please

contact our sales representatives.

- When requiring a device for any ”specific” application, please contact our sales in

advice.

- If there are any questions about the contents of this publication, please contact us at

your convenience.

- The contents described herein are subject to change without prior notice.

- Immerse body in solder paste is not recommended.

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