PD-9.522D International Rectifier IRFR9220 HEXFET Power MOSFET IRFU9220 Dynamic dv/dt Rating @ Repetitive Avalanche Rated e Surface Mount (IRFR9220) Voss = *200V Straight Lead (IRFU9220) Vv Available in Tape & Ree! 6 PL Rog(on) = 1.52 P-Channel Fast Switching 5 Ip = -3.6A Description The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. na The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts D-PAK PAK are possible in typical surface mount applications. TO-252AA TO-251AA Absolute Maximum Ratings Parameter Max. Units Ip @ To = 25C Continuous Drain Current, Vas @ -10 V -3.6 Ip @ Tc = 100C | Continuous Drain Current, Vag @ -10 V -2.3 A tpm Pulsed Drain Current -14 Pp @ Tc = 25C __| Power Dissipation 42 W Pp @ Ta= 25C | Power Dissipation. (PCB Mount)** 2.5 Linear Derating Factor 0.33 WrC Linear Derating Factor (PCB Mount)** 0.020 Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy 310 mJ lar Avalanche Current : -3.6 A Ear Repetitive Avalanche Energy ! 42 mJ dv/dt Peak Diode Recovery dv/dt @ | -5.0 Vins Ty, Tsta Junction and Storage Temperature Range -55 to +150 C Soldering Temperature, for 10 seconds 260 (1.6mm from case) Thermal Resistance Parameter Min. Typ. Max. Units Rasc Junction-to-Case _ = 3.0 Resa Junction-to-Ambient (PCB mount)** _ 50 CAN Rea Junction-to-Ambient _ _ 110 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 1217IRFR9220, IRFU9220 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vieryoss Drain-to-Source Breakdown Voltage -200 | _ V__ | Ves=0V, ln=-250nA AVierypss/AT,| Breakdown Voltage Temp. Coefficient | 0.22; | V/C | Reference to 25C, Ip=-1mA Rosen) Static Drain-to-Source On-Resistance _ _ 1.5 Q | Ves=-10V, Ip=-2.2A Vestn Gate Threshold Voltage -2.0 _ -4.0 V_ | Vps=Ves, Ip=-2502A Cts Forward Transconductance 1.1 _ _ S | Vps=-50V, Ip=-2.2A @ loss Drain-to-Source Leakage Current _| _{ -100 pA Vos=200V, Vas-0V _ | -500 Vos=-160V, Vas=0V, Ty=125C lass Gate-to-Source Forward Leakage _ | -100 nA Ves=-20V Gate-to-Source Reverse Leakage _ _ 100 Vas=20V Qg Total Gate Charge = = 20 Ip=-3.9A Qgs Gate-to-Source Charge | | 3.3 | nC | Vps=-160V Qoa Gate-to-Drain ("Miller") Charge _ _ 11 Vas=-10V See Fig. 6 and 13 tavon) Turn-On Delay Time _ 8.8 _ Vpp=-100V tr | Rise Time = | 27 | | , |lo=3.9A tafort) Turn-Off Delay Time 73 _ Ro=182 tt | Fail Time _ 19 _ Ro=24Q_ See Figure 10 @ Lo Internal Drain Inductance _ 45 _ Baoan : nH | from package (fr Ls | Internal Source Inductance {75 /] and center of die contact 8 Ciss Input Capacitance 340 _ Vas=0V Coss | Output Capacitance | 110 | PF | Vps=-25V Crss Reverse Transfer Capacitance _ 33 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ | 36 MOSFET symbol o (Body Diode) , A showing the Ism Pulsed Source Current _ _ 44 integral reverse G (Body Diode) p-n junction diode. 8 Vso Diode Forward Voltage _ | 63 Vs | Ty=25C, Ig=-3.6A, Vasa0V tr Reverse Recovery Time = 150 | 300 ns | Ty=25C, Ir=-3.9A Qr Reverse Recovery Charge | 0.97 {| 2.0 | uC |di/dt=100A/ius @ ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isps-3.9A, di/dt<95A/us, VoDSV(BR)DSs, max. junction temperature (See Figure 11) Tys150C Vpp=-50V, starting Ty=25C, L=35mH @ Pulse width s 300 us; duty cycle <2%. Re=25Q, lag=-3.6A (See Figure 12) 1218-Ip, Drain Current (Amps) -lp, Drain Current (Amps) 20us PULSE WIDTH Te = 25C 10 tol -Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = ~50V 20us PULSE WIDTH 4 9 10 -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rpson), Drain-to-Source On Resistance IRFR9220, IRFU9220 404 = n a E = ~ Cc = a oO & w & a 5 ; 400 20us PULSE WIDTH To = 150C 10 104 -Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tco=150C (Normalized) VGs = -10V 0.0 ~60 -40 ~20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 1219IRFR9220, IRFU9220 700 Cys + fgg Cag SHORTED 600 Coq Cas + 500 400 300 Capacitance (pF) 0) Coss 100 -Vas. Gate-to-Source Voltage (volts) Crss 0 0 SEE FIGUAE 13 10 404 0 4 8 42 16 20 -Vps, Drain-to-Source Voltage (volts) Qe, Tota! Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED Q BY Ros (ON) E = e ~ a 5 & a ~ o o & E 2 5 3 c 2 S o a > n o a aa + fa T & Tg=1500C Vog = OV ot SINGLE 0.0 1.0 2.0 3.0 4.0 4 2 5 19 2 5 492 2 S493 -Vsp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1220-Ip, Drain Current (Amps) 4.0 IRFR9220, IRFU9220 D D.U.T. y =, Voo Vos \T-t0Vv 3.0 Pulse Width < tps Duty Factor < 0.1% t Fig 10a. Switching Time Test Circuit 2.0 tajon) tr lao) ff eNO NN 1.0 10% | | 0.0 25 Fig 9. 50 75 125 150 Tc, Case Temperature (C) Maximum Drain Current Vs. Case Temperature 90% Vpp_/ \_/ a Fig 10b. Switching Time Waveforms = 3 > Do N 2 4 Cc 3 a oO 3 cc @ E 0.4 + 2 SINGLE PULSE Pon - (THERMAL RESPONSE) let peel y| NOTES: 1. DUTY FACTOR, D=t1/t2 2. PEAK T)=Pom x Ztnjc + Te 40 1075 10-4 10-3 10? O.4 4 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1221IRFR9220, IRFU9220 Vary tp to obtain Vps>y required las Ip TOP 1.64 2,34 BOTTOM 3.6A Fig 12a. Unclamped Inductive Test Circuit lg a Eas; Single Pulse Energy (mJ) Vps pp = SOV Vpp 75 4100 125 4150 25 50 Starting Ty, Junction Temperature(C) Vienyoss Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator t J Ves le * Ip Charge + Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing See pages 1512, 1513 Appendix D: Tape & Reel Information See page 1523 International 1222 Appendix C: Part Marking Information See page 1518