1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
1 Version: B1910
1500W Transient Voltage Suppressors
FEATURES
Glass passivated junction
1500W peak pulse power capability at 1.0ms
Excellent clamping capability
Low incremental surge resistance
Fast response time: Typically
< 1.0ps from 0 V to BV for uni-directional,
5.0 ns for bidirectional
Typical IR: 1.0μA above 10V
UL certified: UL #E258596
Bi-directional types use CA suffix
Electrical characteristics apply in both directions
DO-201AE
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY. NO
COLOR BAND ON BIDIRECTIONAL DEVICES.
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation tp=1ms
PPPM 1500 W
Peak pulse current IPPM see table A
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)(1) IFSM 200 A
Junction temperature TJ -55 to +175 °C
Storage temperature TSTG -55 to +175 °C
Note:
1. Measured on 8.3ms single half-sine wave; duty cycle = 4 pulses per minute maximum.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Power dissipation
.375 inch lead length at T
A
=75°C PD 5.0 W
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
2 Version: B1910
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Uni-directional
Bi-directional (C)
Device
Reverse
Stand-Off
Voltage
VRWM
(V)
Breakdown
Voltage
VBR
(V)
Test
Current
IT
(mA)
Clamping
Voltage at
IPPM
VC(V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
Current at
VRWM
IR (μA) (2)
Min. Max.
1V5KE6V8(C)A 5.80 6.45 7.14 10 10.5 143 1000
1V5KE7V5(C)A 6.40 7.13 7.88 10 11.3 133 500
1V5KE8V2(C)A 7.02 7.79 8.61 10 12.1 124 200
1V5KE9V1(C)A 7.78 8.65 9.55 1 13.4 112 50
1V5KE10(C)A 8.55 9.5 10.5 1 14.5 103 10
1V5KE11(C)A 9.40 10.5 11.6 1 15.6 96.2 5
1V5KE12(C)A 10.2 11.4 12.6 1 16.7 90.0 5
1V5KE13(C)A 11.1 12.4 13.7 1 18.2 82.0 5
1V5KE15(C)A 12.8 14.3 15.8 1 21.2 71.0 5
1V5KE16(C)A 13.6 15.2 16.8 1 22.5 67.0 5
1V5KE18(C)A 15.3 17.1 18.9 1 26.2 59.5 5
1V5KE20(C)A 17.1 19.0 21.0 1 27.7 54.2 5
1V5KE22(C)A 18.8 20.9 23.1 1 30.6 49.0 5
1V5KE24(C)A 20.5 22.8 25.2 1 33.2 45.2 5
1V5KE27(C)A 23.1 25.7 28.4 1 37.5 40.0 5
1V5KE30(C)A 25.6 28.5 31.5 1 41.4 36.2 5
1V5KE33(C)A 28.2 31.4 34.7 1 45.7 33.0 5
1V5KE36(C)A 30.8 34.2 37.8 1 49.9 30.1 5
1V5KE39(C)A 33.3 37.1 41 1 53.9 28.0 5
1V5KE43(C)A 36.8 40.9 45.2 1 59.3 25.3 5
1V5KE47(C)A 40.2 44.7 49.4 1 64.8 23.2 5
1V5KE51(C)A 43.6 48.5 53.6 1 70.1 21.4 5
1V5KE56(C)A 47.8 53.2 58.8 1 77.0 19.5 5
1VKE62(C)A 53.0 58.9 65.1 1 85.0 17.7 5
1V5KE68(C)A 58.1 64.6 71.4 1 92.0 16.3 5
1V5KE75(C)A 64.1 71.3 78.8 1 104 14.6 5
1V5KE82(C)A 70.1 77.9 86.1 1 113 13.3 5
1V5KE91(C)A 77.8 86.5 95.5 1 125 12.0 5
1V5KE100(C)A 85.5 95 105 1 137 11.0 5
1V5KE110(C)A 94.0 106 116 1 152 9.9 5
1V5KE120(C)A 102 114 126 1 165 9.1 5
1V5KE130(C)A 111 124 137 1 179 8.4 5
1V5KE150(C)A 128 143 158 1 207 7.2 5
1V5KE160(C)A 136 152 168 1 219 6.8 5
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
3 Version: B1910
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Uni-directional
Bi-directional (C)
Device
Reverse
Stand-Off
Voltage
VRWM
(V)
Breakdown
Voltage
VBR
(V)
Test
Current
IT
(mA)
Clamping
Voltage at
IPPM
VC(V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
Current at
VRWM
IR (μA) (2)
Min. Max.
1V5KE170(C)A 145 162 179 1 234 6.4 5
1V5KE180(C)A 154 171 189 1 246 6.1 5
1V5KE200(C)A 171 190 210 1 274 5.5 5
1V5KE220(C)A 185 209 231 1 328 4.6 5
1V5KE250(C)A 214 237 263 1 344 4.5 5
1V5KE300(C)A 256 285 315 1 414 3.8 5
1V5KE350(C)A 300 333 368 1 482 3.2 5
1V5KE400(C)A 342 380 420 1 548 2.8 5
1V5KE440(C)A 376 418 462 1 602 2.6 5
Note:
2. .For bi-directional parts with VRWM < 10 V, the IR maximum limit is doubled.
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
4 Version: B1910
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
Fig2. Pulse Derating Curve
Fig3. Pulse Waveform
Fig4. Total Capacitance
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10
PULSE POWER (KW)
PULSE WIDTH (ms)
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PULSE POWER (%)
AMBIENT TEMPERATURE (°C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
IPPM, PEAK PULSE CURRENT (%)
t, TIME (ms)
td
Peak value
IPPM
Rise time tr=10μs to 100%
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
10
100
1000
10000
5 50 500
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
Unidirectional
Measured at
Zero Bias
Bidirectional
Measured at
Stand-Off
Voltage (V)
TOTAL CAPCAITANCE (pF)
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
5 Version: B1910
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig5. Steady State Power Derating Curve
Fig6. Non-Repetitive Surge Current
0
1
2
3
4
5
6
0 25 50 75 100 125 150 175 200
POWER DISSIPATION (W)
LEAD TEMPERATURE (°C)
20
200
1 10 100
PEAK FORWARD SURGE CURRENT(A)
NUMBER OF CYCLES at 60hZ
Unidirectional only
8.3ms single half sine-wave
JEDEC method
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
6 Version: B1910
PACKAGE OUTLINE DIMENSIONS
DO-201AE
DIM.
Unit (mm)
Min Max
A 4.80 5.60
B 0.94 1.07
C 25.40 -
D 7.20 9.50
E 25.40 -
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO-201 VARIATION AE.
B) PLASTIC PACKAGE BODY.
C) ALL DIMENSIONS ARE IN MILLMETERS.
1V5KE6V8(C)A – 1V5KE440(C)A
Taiwan Semiconductor
7 Version: B1910
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