CFY66
Semi conductor Group 1 of 8 Draft D, S eptember 99
HiRel K-Band GaAs Super Low Noise HEM T
• HiRel Di scret e and M icrow ave Semiconductor
• Conventional AlGaAs/G aAs HEMT
(For new design we recommend to use our
pseudo-morphic HEMT CFY67)
• For professional super low-noise amplifiers
• For fr equencies fr om 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figur e, high associated gain
• Space Qualif ied
ESA/SCC Detail Spec. No.: 5613/002,
Type Variant No.s 01 to 04
12
34
ESD: Electrostatic discharge sensitive device, observe handling precaut ions!
Type Marking Ordering Code Pin Configurat i on Package
1234
CFY66-08 (q l)
CFY66-08P (q l)
CFY66-10 (q l)
CFY66-10P (q l)
- see below G S D S Micro-X
CFY66-nnl: specifies gain and output power levels (see electr ical char act eristics)
(ql) Quality Level: P: Professional Quality, Ordering Code: on request
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: on request
(see order inst r uctions for or dering example)
CFY66
Semi conductor Group 2 of 8 Draft D, S eptember 99
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 3.5 V
Drain-g a t e voltage VDG 4.5 V
Gate-sour ce voltage (reverse / forward) VGS - 3... + 0.5 V
Drain current ID60 mA
Gate forward current IG2mA
RF Input Power, C- and X-Band 1) PRF,in + 10 dBm
Junction temperat ur e TJ150 °C
Storag e t em perature rang e Tstg - 65... + 150 °C
Total power dissipation 2) Ptot 200 mW
Soldering t em perature 3) Tsol 230 °C
Thermal Resistance
Junction-soldering point Rth JS ≤ 515 (tbc.) K/W
Notes.:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is r equired.
2) At T S = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be r esolder ed unt il 3 minutes have
elapsed.
CFY66
Semi conductor Group 3 of 8 Draft D, S eptember 99
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter Symbol Values Unit
min. typ. max.
DC Characteristi cs
Drain-source sat ur at ion cur r ent
VDS = 2 V, VGS = 0 V IDss 10 30 60 mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V IDp -< 50-µA
Gate leak age current at pinch- off
VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA
Transconductance
VDS = 2 V, ID = 10 mA gm10 40 55 - mS
Gate leak age current at operation
VDS = 2 V, ID = 10 mA -IG10 -< 0.52µA
Thermal resistance
junction to solder ing point Rth JS - 450 - K/W
CFY66
Semi conductor Group 4 of 8 Draft D, S eptember 99
Electrical Characteristics (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Noise fig u r e 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz NF dB
CFY66-08, -08P - 0.7 0.8
CFY66-10, 10P - 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz GadB
CFY66-08, -08P 10.0 11. 0 -
CFY66-10, 10P 9.5 10.5 -
Output power at 1 dB gain compression 2)
VDS = 2 V, ID = 20 mA, f = 12 GHz P1dB dBm
CFY66-06, -08, -10 - 11.0 -
CFY66-08P, -10P 10.0 11. 0 -
Notes.:
1) Noise figure / sssociated g ain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no f ine- t uning).
2) Output power charact er ist ics given for optim um output power matching conditions (fixed
generic m at c hing, no f ine-tuning).
CFY66
Semi conductor Group 5 of 8 Draft D, S eptember 99
Typical Common Source S-Parameters
CFY66-08: VDS = 2 V, ID = 10 mA, Zo = 50 Ω
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB]
1,0 0,990 -21 4,451 161 0,0260 70 0,649 -16 0,14 22,3
2,0 0,960 -39 4,282 144 0,0460 61 0,623 -29 0,19 19,7
3,0 0,920 -57 4,148 126 0,0650 49 0,589 -43 0,27 18,0
4,0 0,880 -77 3,979 108 0,0830 37 0,560 -57 0,32 16,8
5,0 0,830 -95 3,727 93 0,0940 25 0,532 -70 0,39 16,0
6,0 0,790 -111 3,444 78 0,1000 14 0,506 -83 0,47 15,4
7,0 0,749 -124 3,206 64 0,1060 6 0,490 -94 0,55 14,8
8,0 0,720 -137 3,029 50 0,1110 -3 0,463 -103 0,63 14,4
9,0 0,690 -150 2,907 38 0,1130 -11 0,440 -113 0,70 14,1
10,0 0,670 -165 2,845 25 0,1190 -20 0,420 -121 0,74 13,8
11,0 0,649 179 2,787 11 0,1210 -28 0,400 -130 0,79 13,6
12,0 0,628 164 2,699 -3 0,1200 -37 0,385 -143 0,84 13,5
13,0 0,610 151 2,614 -16 0,1200 -46 0,370 -153 0,91 13,4
14,0 0,597 138 2,584 -28 0,1190 -55 0,355 -162 0,96 13,4
15,0 0,584 121 2,550 -42 0,1180 -66 0,340 -172 1,01 13,3 12,8
16,0 0,580 104 2,484 -56 0,1170 -76 0,330 178 1,05 13,3 11,9
17,0 0,580 89 2,461 -71 0,1150 -87 0,325 169 1,08 13,3 11,5
18,0 0,580 74 2,456 -86 0,1160 -100 0,320 160 1,09 13,3 11,4
Typical Common Source Noise-Parameters
CFY66-08: VDS = 2 V, ID = 10 mA, Zo = 50 Ω
fNF
min |Γopt|<Γopt Rn
[GHz] [dB] [magn] [angle] [Ω]
1 0,27 0,770 16 17,85
2 0,31 0,720 30 16,55
3 0,35 0,672 43 15,27
4 0,38 0,634 57 13,75
5 0,42 0,604 71 11,99
6 0,46 0,578 85 10,04
7 0,50 0,558 100 8,15
8 0,55 0,541 114 6,30
9 0,60 0,528 128 4,74
10 0,65 0,517 143 3,45
11 0,70 0,506 157 2,58
12 0,74 0,496 171 2,16
13 0,79 0,485 -175 2,27
14 0,85 0,472 -160 2,88
15 0,89 0,457 -146 3,99
16 0,95 0,437 -132 5,59
17 1,00 0,415 -118 7,63
18 1,06 0,389 -102 9,96
CFY66
Semi conductor Group 6 of 8 Draft D, S eptember 99
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form: Ordering Code: Q..........
CFY66 -(nnl) (ql)
-(nnl) Noise Figure/ G ain and/or Power Level
(ql) : Quality Level
Ordering Example: Order ing Code: (on request)
CFY66-08P ES
For CFY66, Noise Fig ure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 10.0 dB, P1dB > 10 dBm @ 12 G Hz
in ESA Space Quality Level
Further Informations :
See our WWW-Pages:
- Discrete and RF- Sem iconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductor s
www.infineon.com/products/discrete/hirel.htm
Please contact also our m ar keting division :
Tel.: ++89 234 24480
Fax.: ++89 234 28434
e-mail: martin.wimmers@infineon.com
Address: Infineon T echnologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CFY66
Semi conductor Group 7 of 8 Draft D, S eptember 99
Mi cro-X Package Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
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