CFY66 HiRel K-Band GaAs Super Low Noise HEMT * HiRel Discrete and Microwave Semiconductor * Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) * For professional super low-noise amplifiers * For frequencies from 500 MHz to > 20 GHz * Hermetically sealed microwave package * Super low noise figure, high associated gain * 4 3 1 2 Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY66-08 (ql) Marking - Ordering Code Pin Configuration see below 1 2 3 4 G S D S Package Micro-X CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, Ordering Code: on request H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: on request (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 3.5 V Drain-gate voltage VDG 4.5 V Gate-source voltage (reverse / forward) VGS - 3... + 0.5 V Drain current ID 60 mA Gate forward current IG 2 mA RF Input Power, C- and X-Band 1) PRF,in + 10 dBm Junction temperature TJ 150 C Storage temperature range Tstg - 65... + 150 C Ptot 200 mW Tsol 230 C Rth JS 515 (tbc.) K/W Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: 1) For VDS 2 V. For VDS > 2 V, derating is required. 2) At TS = + 47 C. For TS > + 47 C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 8 Draft D, September 99 CFY66 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 10 30 60 mA Gate threshold voltage VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V Drain current at pinch-off VDS = 1.5 V, VGS = - 3 V IDp - < 50 - A Gate leakage current at pinch-off VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 A Transconductance VDS = 2 V, ID = 10 mA gm10 40 55 - mS Gate leakage current at operation VDS = 2 V, ID = 10 mA -IG10 - < 0.5 2 A Thermal resistance junction to soldering point Rth JS - 450 - K/W Semiconductor Group 3 of 8 Draft D, September 99 CFY66 Electrical Characteristics (continued) Parameter Symbol Values min. typ. Unit max. AC Characteristics Noise figure 1) VDS = 2 V, ID = 10 mA, f = 12 GHz NF dB CFY66-08, -08P - 0.7 0.8 CFY66-10, 10P - 0.9 1.0 Associated gain. 1) VDS = 2 V, ID = 10 mA, f = 12 GHz Ga dB CFY66-08, -08P 10.0 11.0 - CFY66-10, 10P 9.5 10.5 - Output power at 1 dB gain compression VDS = 2 V, ID = 20 mA, f = 12 GHz 2) P1dB dBm CFY66-06, -08, -10 - 11.0 - CFY66-08P, -10P 10.0 11.0 - Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Semiconductor Group 4 of 8 Draft D, September 99 CFY66 Typical Common Source S-Parameters CFY66-08: V DS = 2 V, f |S11| <S11 |S21| <S21 |S12| [GHz] [magn] [angle] [magn] [angle] [magn] 1,0 0,990 -21 4,451 161 0,0260 2,0 0,960 -39 4,282 144 0,0460 3,0 0,920 -57 4,148 126 0,0650 4,0 0,880 -77 3,979 108 0,0830 5,0 0,830 -95 3,727 93 0,0940 6,0 0,790 -111 3,444 78 0,1000 7,0 0,749 -124 3,206 64 0,1060 8,0 0,720 -137 3,029 50 0,1110 9,0 0,690 -150 2,907 38 0,1130 10,0 0,670 -165 2,845 25 0,1190 11,0 0,649 179 2,787 11 0,1210 12,0 0,628 164 2,699 -3 0,1200 13,0 0,610 151 2,614 -16 0,1200 14,0 0,597 138 2,584 -28 0,1190 15,0 0,584 121 2,550 -42 0,1180 16,0 0,580 104 2,484 -56 0,1170 17,0 0,580 89 2,461 -71 0,1150 18,0 0,580 74 2,456 -86 0,1160 I D = 10 mA, Z o = 50 <S12 |S22| <S22 k-Fact. S 21 /S 12 MAG [angle] [magn] [angle] [magn] [dB] [dB] 70 0,649 -16 0,14 22,3 61 0,623 -29 0,19 19,7 49 0,589 -43 0,27 18,0 37 0,560 -57 0,32 16,8 25 0,532 -70 0,39 16,0 14 0,506 -83 0,47 15,4 6 0,490 -94 0,55 14,8 -3 0,463 -103 0,63 14,4 -11 0,440 -113 0,70 14,1 -20 0,420 -121 0,74 13,8 -28 0,400 -130 0,79 13,6 -37 0,385 -143 0,84 13,5 -46 0,370 -153 0,91 13,4 -55 0,355 -162 0,96 13,4 -66 0,340 -172 1,01 13,3 12,8 -76 0,330 178 1,05 13,3 11,9 -87 0,325 169 1,08 13,3 11,5 -100 0,320 160 1,09 13,3 11,4 Typical Common Source Noise-Parameters CFY66-08: f [GHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 V DS = 2 V, I D = 10 mA, Z o = 50 NF min Rn | opt | < opt [dB] [magn] [angle] [] 0,27 0,770 16 17,85 0,31 0,720 30 16,55 0,35 0,672 43 15,27 0,38 0,634 57 13,75 0,42 0,604 71 11,99 0,46 0,578 85 10,04 0,50 0,558 100 8,15 0,55 0,541 114 6,30 0,60 0,528 128 4,74 0,65 0,517 143 3,45 0,70 0,506 157 2,58 0,74 0,496 171 2,16 0,79 0,485 -175 2,27 0,85 0,472 -160 2,88 0,89 0,457 -146 3,99 0,95 0,437 -132 5,59 1,00 0,415 -118 7,63 1,06 0,389 -102 9,96 Semiconductor Group 5 of 8 Draft D, September 99 CFY66 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CFY66 -(nnl) (ql) -(nnl) Noise Figure/Gain and/or Power Level (ql): Quality Level Ordering Example: Ordering Code: (on request) CFY66-08P ES For CFY66, Noise Figure/Gain/Power Level 08P: NF < 0.8 dB, Ga > 10.0 dB, P1dB > 10 dBm @ 12 GHz in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: Semiconductor Group ++89 234 24480 ++89 234 28434 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich 6 of 8 Draft D, September 99 CFY66 Micro-X Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 7 of 8 Draft D, September 99